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    • 4. 发明申请
    • CURRENT GENERATION CIRCUIT, AND BANDGAP REFERENCE CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
    • 电流产生电路,以及包括其的带状基准电路和半导体器件
    • US20150293552A1
    • 2015-10-15
    • US14669352
    • 2015-03-26
    • Renesas Electronics Corporation
    • Atsushi MOTOZAWAYuichi OKUDA
    • G05F3/26
    • G05F3/30G05F3/245G05F3/267
    • A current generation circuit including a first and a second bipolar transistors, a current distribution circuit that makes a first current and a second current flow through the first and second bipolar transistors, respectively, the first current and the second current corresponding to a first control voltage, a first NMOS transistor disposed between the first bipolar transistor and the first current distribution circuit, a second NMOS transistor disposed between the second bipolar transistor and the first current distribution circuit, a first resistive element, a first operational amplifier that outputs the second control voltage to the gates of the first and the second NMOS transistors according to a drain voltage of the first NMOS transistor and a reference bias voltage, and a second operational amplifier that generates the first control voltage according to a drain voltage of the second NMOS transistor and the reference bias voltage.
    • 一种包括第一和第二双极晶体管的电流产生电路,使第一电流和第二电流分别通过第一和第二双极晶体管的电流分配电路分别对应于第一和第二双极晶体管的第一电流和第二电流 ,设置在所述第一双极晶体管和所述第一电流分配电路之间的第一NMOS晶体管,设置在所述第二双极晶体管和所述第一电流分配电路之间的第二NMOS晶体管,第一电阻元件,输出所述第二控制电压的第一运算放大器 根据第一NMOS晶体管的漏极电压和基准偏置电压到第一和第二NMOS晶体管的栅极;以及第二运算放大器,其根据第二NMOS晶体管的漏极电压和第二NMOS晶体管产生第一控制电压, 参考偏置电压。