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1. 发明授权

US10547170B2 Semiconductor device 有权
公开(公告)号：US10547170B2
公开(公告)日：2020-01-28
申请号：US15496275
申请日：2017-04-25
申请人： Renesas Electronics Corporation
发明人： Akihiro Nakahara , Makoto Tanaka
IPC分类号： H02H9/04 , H02H3/20 , H03K17/14 , H03K17/082 , H03K17/687 , G05F1/56 , H02H7/125
摘要： A semiconductor device according to related art has a problem that a clamp voltage that clamps an output voltage cannot adaptively vary in accordance with a power supply voltage, and it is thus not possible to reduce heating of a semiconductor chip to a sufficiently low level. According to one embodiment, a semiconductor device includes a drive circuit (10) that controls on and off of an output transistor (13) and an overvoltage protection circuit (12) that controls a conductive state of the output transistor (13) when an output voltage Vout reaches a clamp voltage, and the overvoltage protection circuit (12) has a circuit structure that sets the clamp voltage to vary in proportion to a power supply voltage VDD.

2. 发明申请

US20160099711A1 SEMICONDUCTOR DEVICE, AND ON-VEHICLE ELECTRONIC DEVICE AND AUTOMOBILE EACH INCLUDING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件和车载电子设备以及每个包括半导体器件的汽车
公开(公告)号：US20160099711A1
公开(公告)日：2016-04-07
申请号：US14865170
申请日：2015-09-25
申请人： Renesas Electronics Corporation
发明人： Akira Uemura , Akihiro Nakahara
IPC分类号： H03K17/14 , H05B37/02 , H05B39/04 , B60R16/02
CPC分类号： H01L27/0629 , B60R16/03 , H01L29/4236 , H01L29/7827 , H03K17/145 , H05B33/089 , H05B37/0227 , H05B39/04
摘要： A load driving device 10 includes a temperature detector TD1 that sets a temperature difference detection signal dt_ot to active when a temperature difference Tdif between a temperature Ttr of an output transistor T1 and an ambient temperature becomes more than a reference temperature difference Tdref1, and sets an over temperature detection signal at_ot to active when the temperature Ttr of the output transistor T1 becomes higher than a reference temperature Tref1, a current limiter IL1 that limits a GS current of the output transistor T1 when any one of the detection signals becomes active, and the output transistor T1 that turns off regardless of an external input signal IN when any one of the detection signals becomes active. The temperature detector TD1 sets the temperature difference detection signal dt_ot to inactive when the temperature difference Tdif between the output transistor temperature Ttr and the ambient temperature becomes equal to or less than a reference temperature difference Tdref2, and sets the over temperature detection signal at_ot to inactive when the output transistor temperature Ttr becomes equal to or lower than a reference temperature Tref2.
摘要翻译：负载驱动装置10包括温度检测器TD1，当输出晶体管T1的温度Ttr与环境温度之间的温差Tdif大于基准温度差Tdref1时，将温度差检测信号dt_ot设定为有效，并设定当温度检测信号at_ot在输出晶体管T1的温度Ttr变得高于参考温度Tref1时被激活;限流器IL1，当任何一个检测信号变为活动时限制输出晶体管T1的GS电流; 输出晶体管T1，当任一个检测信号变为有效时，无论外部输入信号IN如何，都会断开。当输出晶体管温度Ttr和环境温度之间的温度差Tdif等于或小于参考温度差Tdref2时，温度检测器TD1将温度差检测信号dt_ot设置为无效，并将过温度检测信号at_ot设置为无效当输出晶体管温度Ttr变得等于或低于参考温度Tref2时。

3. 发明授权

US10607985B2 Semiconductor device, and on-vehicle electronic device and automobile each including the semiconductor device 有权
公开(公告)号：US10607985B2
公开(公告)日：2020-03-31
申请号：US15587177
申请日：2017-05-04
申请人： Renesas Electronics Corporation
发明人： Akira Uemura , Akihiro Nakahara
IPC分类号： H05B33/08 , H01L27/06 , H03K17/14 , B60R16/03 , H01L29/78 , H05B37/02 , H05B39/04 , H01L29/423
摘要： A semiconductor integrated power device including: an output transistor configured to drive an external load element; a temperature detection circuit configured to: output a first detection signal in reference to a temperature difference between a temperature of the output transistor and an ambient temperature; and output a second detection signal in reference to a temperature difference between a temperature of the output transistor and a first reference temperature; and a current limiter circuit configured to limit a current flowing through the output transistor according to the first detection signal and the second detection signal. The temperature detection circuit activates and inactivates the first detection signal or the second detection signal based on an output of a first hysteresis circuit.

4. 发明授权

US10298153B2 Input buffer, semiconductor device and engine control unit 有权
公开(公告)号：US10298153B2
公开(公告)日：2019-05-21
申请号：US15656864
申请日：2017-07-21
申请人： Renesas Electronics Corporation
发明人： Naohiro Yoshimura , Akihiro Nakahara , Makoto Tanaka
IPC分类号： H02P1/02 , H02P29/20 , G01R31/02
摘要： Provided are an input buffer, a semiconductor device and an engine control unit making it possible to execute fault diagnosis in real time. The input buffer includes a first comparator which compares a voltage of an input signal with a first reference voltage, a hysteresis circuit which generates a first high voltage side or low voltage side reference voltage on the basis of a comparison result from the first comparator, a second comparator which compares the voltage of the input signal with a second reference voltage, and a hysteresis circuit which outputs a second high voltage side reference voltage which is higher than the first high voltage side reference voltage or a second low voltage side reference voltage which is lower than the first low voltage side reference voltage.

5. 发明授权

US09537303B2 Semiconductor device and electric control device 有权
标题翻译：半导体装置及电气控制装置
公开(公告)号：US09537303B2
公开(公告)日：2017-01-03
申请号：US14137791
申请日：2013-12-20
申请人： Renesas Electronics Corporation
发明人： Makoto Tanaka , Akihiro Nakahara
IPC分类号： G05F1/00 , H02H9/02 , H03K17/082
CPC分类号： H02H9/025 , H03K17/0822
摘要： A semiconductor device includes: an output transistor; and a current detection section. The output transistor controls electric power supply from an electric power source to a load. The current detection section detects a current flowing through the output transistor. The current detection section has a current detection characteristic in which a current detection value has approximately linier and negative dependence on a drain-source voltage of the output transistor.
摘要翻译：一种半导体器件包括：输出晶体管; 和电流检测部。输出晶体管控制从电源到负载的电力供应。电流检测部检测流过输出晶体管的电流。电流检测部具有电流检测特性，其中电流检测值对输出晶体管的漏极 - 源极电压具有大致的依赖性和负相关性。

6. 发明授权

US08717727B2 Power supply control apparatus including overcurrent detection circuit 有权
标题翻译：电源控制装置包括过电流检测电路
公开(公告)号：US08717727B2
公开(公告)日：2014-05-06
申请号：US13903285
申请日：2013-05-28
申请人： Renesas Electronics Corporation
发明人： Akihiro Nakahara
IPC分类号： H02H3/08 , H02H9/02
CPC分类号： H02H7/10 , G01R19/16571 , H02H3/087
摘要： A comparator includes a first potential supply terminal, a second potential supply terminal supplying a different potential from that of the first potential supply terminal, a first transistor of a first conductivity type coupled between the first potential supply terminal and a first node, and including a control terminal coupled to a first terminal, a second transistor of the first conductivity type coupled between the first potential supply terminal and a second node, and including a control terminal coupled to a second terminal, a third transistor of a second conductivity type coupled between the first node and a third terminal, and including a control terminal coupled to the second node, and a fourth transistor of the second conductivity type coupled between the second node and the second potential supply terminal, and including a control terminal coupled to the second node.
摘要翻译：比较器包括第一电位供应端，提供与第一电位端不同的电位的第二电位电源端，第一电导型的第一晶体管，耦合在第一电位供应端和第一节点之间，控制端子，耦合到第一端子，耦合在第一电位供应端子和第二节点之间的第一导电类型的第二晶体管，并且包括耦合到第二端子的控制端子，第二导电类型的第三晶体管，第一节点和第三终端，并且包括耦合到第二节点的控制终端，以及耦合在第二节点和第二电位供应终端之间的第二导电类型的第四晶体管，并且包括耦合到第二节点的控制终端。

7. 发明授权

US09762053B2 Load driving device 有权
公开(公告)号：US09762053B2
公开(公告)日：2017-09-12
申请号：US14465160
申请日：2014-08-21
申请人： Renesas Electronics Corporation
发明人： Akihiro Nakahara
IPC分类号： H02H3/00 , H02H11/00 , H03K17/06 , H03K17/0812
CPC分类号： H02H11/003 , H03K17/063 , H03K17/08122 , H03K2217/0018 , H03K2217/0036
摘要： A load driving method includes bringing an output transistor disposed between a first power supply line and an output terminal connected to a load into a conduction state by a protection transistor provided between a gate of the output transistor and a second power supply line when a polarity of a power supply coupled between the first power supply line and the second power supply lines is reversed, and forming a conductive path between the second power supply line and a back gate of the protection transistor via a transistor by a back gate control circuit when the polarity of the power supply is normal, the back gate control circuit including the transistor, a gate of the transistor being coupled to the first power supply line directly via a connection node located in a connecting line that couples the first power supply line and the output transistor, the transistor being coupled between the second power supply line and the back gate of the protection transistor.

8. 发明授权

US09673803B2 Semiconductor device, and on-vehicle electronic device and automobile each including semiconductor device 有权
公开(公告)号：US09673803B2
公开(公告)日：2017-06-06
申请号：US14865170
申请日：2015-09-25
申请人： Renesas Electronics Corporation
发明人： Akira Uemura , Akihiro Nakahara
IPC分类号： H03K17/14 , B60R16/03 , H05B33/08
CPC分类号： H01L27/0629 , B60R16/03 , H01L29/4236 , H01L29/7827 , H03K17/145 , H05B33/089 , H05B37/0227 , H05B39/04
摘要： A load driving device 10 includes a temperature detector TD1 that sets a temperature difference detection signal dt_ot to active when a temperature difference Tdif between a temperature Ttr of an output transistor T1 and an ambient temperature becomes more than a reference temperature difference Tdref1, and sets an over temperature detection signal at_ot to active when the temperature Ttr of the output transistor T1 becomes higher than a reference temperature Tref1, a current limiter IL1 that limits a GS current of the output transistor T1 when any one of the detection signals becomes active, and the output transistor T1 that turns off regardless of an external input signal IN when any one of the detection signals becomes active. The temperature detector TD1 sets the temperature difference detection signal dt_ot to inactive when the temperature difference Tdif between the output transistor temperature Ttr and the ambient temperature becomes equal to or less than a reference temperature difference Tdref2, and sets the over temperature detection signal at_ot to inactive when the output transistor temperature Ttr becomes equal to or lower than a reference temperature Tref2.

9. 发明申请

US20140362484A1 LOAD DRIVING DEVICE 有权
标题翻译：负载驱动装置
公开(公告)号：US20140362484A1
公开(公告)日：2014-12-11
申请号：US14465160
申请日：2014-08-21
申请人： Renesas Electronics Corporation
发明人： Akihiro Nakahara
IPC分类号： H02H11/00
CPC分类号： H02H11/003 , H03K17/063 , H03K17/08122 , H03K2217/0018 , H03K2217/0036
摘要： A load driving method includes bringing an output transistor disposed between a first power supply line and an output terminal connected to a load into a conduction state by a protection transistor provided between a gate of the output transistor and a second power supply line when a polarity of a power supply coupled between the first power supply line and the second power supply lines is reversed, and forming a conductive path between the second power supply line and a back gate of the protection transistor via a transistor by a back gate control circuit when the polarity of the power supply is normal, the back gate control circuit including the transistor, a gate of the transistor being coupled to the first power supply line directly via a connection node located in a connecting line that couples the first power supply line and the output transistor, the transistor being coupled between the second power supply line and the back gate of the protection transistor.
摘要翻译：一种负载驱动方法包括：当设置在输出晶体管的栅极和第二电源线之间的保护晶体管时，将设置在第一电源线和连接到负载的输出端子之间的输出晶体管导通到导通状态，耦合在第一电源线和第二电源线之间的电源被反向，并且当极性控制电路的极性时，通过晶体管在第二电源线和保护晶体管的背栅之间形成导电路径的电源是正常的，背栅极控制电路包括晶体管，晶体管的栅极通过位于连接第一电源线和输出晶体管的连接线的连接节点直接耦合到第一电源线晶体管耦合在第二电源线和保护晶体管的背栅之间。

10. 发明授权

US08879227B2 Current limiting circuit 有权
标题翻译：限流电路
公开(公告)号：US08879227B2
公开(公告)日：2014-11-04
申请号：US13923017
申请日：2013-06-20
申请人： Renesas Electronics Corporation
发明人： Akihiro Nakahara
IPC分类号： H02H9/02 , G05F1/10 , H03K17/082
CPC分类号： G05F1/10 , H01L2224/48247 , H03K17/0822
摘要： An exemplary aspect of the present invention is a current limiting circuit including: an output transistor that controls a current flowing to a load from a power supply; a current sense transistor through which a current dependent on a current flowing through the output transistor flows; a sense resistor connected in series with the current sense transistor; a potential difference detection unit that detects a potential difference generated between both ends of the sense resistor; a constant current generation unit that supplies a constant current to the potential difference detection unit; and a control unit that controls a conduction state of the output transistor based on a control voltage generated based on the potential difference and the constant current, in which the sense resistor is disposed so as to surround the potential difference detection unit.
摘要翻译：本发明的示例性方面是限流电路，包括：输出晶体管，其控制从电源流向负载的电流; 电流检测晶体管，依赖于流过输出晶体管的电流的电流流过该电流检测晶体管; 与电流检测晶体管串联连接的感测电阻器; 电位差检测单元，其检测在所述检测电阻器的两端之间产生的电位差; 恒定电流产生单元，其向所述电位差检测单元供给恒定电流; 以及控制单元，其基于以所述电位差和所述恒定电流生成的控制电压来控制所述输出晶体管的导通状态，所述恒定电流设置在所述电位差检测单元的周围。

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