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1. 发明授权

US10867763B1 Shape-memory-based dead-facing mechanisms for severing electrical connections 有权
公开(公告)号：US10867763B1
公开(公告)日：2020-12-15
申请号：US16423384
申请日：2019-05-28
申请人： Raytheon Company
发明人： William D. Werries
IPC分类号： H01H37/32 , H01H37/64 , H01H37/46
CPC分类号： H01H37/323 , H01H37/64 , H01H37/46
摘要： An apparatus includes an electrical switch that includes (i) multiple first electrical contacts and (ii) a second electrical contact configured to bridge the first electrical contacts in order to form at least one electrical connection. The apparatus also includes a shape-memory actuator configured to move the second electrical contact in order to selectively open the electrical switch and break the at least one electrical connection. The shape-memory actuator may be configured to be returned to an original shape and the second electrical contact may be configured to be returned to a bridging position in order to reset the apparatus. The apparatus may further include a shutter member configured to be moved between the first electrical contacts in order to prevent re-bridging of the first electrical contacts and to extend an arc-gap between the first electrical contacts.

2. 发明授权

US09773627B2 Shape memory circuit breakers 有权
公开(公告)号：US09773627B2
公开(公告)日：2017-09-26
申请号：US14255562
申请日：2014-04-17
申请人： Raytheon Company
发明人： Frederick B. Koehler , Ward D. Lyman , William D. Werries
IPC分类号： F03G7/06 , H01H37/32 , H01H37/46
CPC分类号： H01H37/323 , F03G7/065 , H01H37/46 , Y10T29/49105
摘要： A shape memory circuit breaker includes a shape memory substrate having first and second opposed substrate ends. The shape memory substrate is configured to transition from a strained conductive configuration to a fractured non-conductive configuration. An isolation housing is coupled with the shape memory substrate. The isolation housing includes first and second anchors coupled near the first and second substrate ends. A brace extends between the first and second anchors, and the brace statically positions the first and second anchors and the respective first and second substrate ends. The shape memory substrate is configured to transition from the strained conductive configuration to the fractured non-conductive configuration at or above a specified temperature range corresponding to a specified overload current range or voltage range, and the first substrate end fractures from the second substrate end at or above the specified temperature range resulting in an open circuit.

3. 发明申请

US20160217954A1 SHAPE MEMORY CIRCUIT BREAKERS 有权
标题翻译：形状记忆断路器
公开(公告)号：US20160217954A1
公开(公告)日：2016-07-28
申请号：US14255562
申请日：2014-04-17
申请人： Raytheon Company
发明人： Frederick B. Koehler , Ward D. Lyman , William D. Werries
IPC分类号： H01H37/32
CPC分类号： H01H37/323 , F03G7/065 , H01H37/46 , Y10T29/49105
摘要： A shape memory circuit breaker includes a shape memory substrate having first and second opposed substrate ends. The shape memory substrate is configured to transition from a strained conductive configuration to a fractured non-conductive configuration. An isolation housing is coupled with the shape memory substrate. The isolation housing includes first and second anchors coupled near the first and second substrate ends. A brace extends between the first and second anchors, and the brace statically positions the first and second anchors and the respective first and second substrate ends. The shape memory substrate is configured to transition from the strained conductive configuration to the fractured non-conductive configuration at or above a specified temperature range corresponding to a specified overload current range or voltage range, and the first substrate end fractures from the second substrate end at or above the specified temperature range resulting in an open circuit.
摘要翻译：形状记忆断路器包括具有第一和第二相对基底端的形状记忆基片。形状记忆基板被配置为从应变导电构型转变到断裂非导电构型。隔离壳体与形状记忆基板耦合。隔离壳体包括耦合在第一和第二基板端附近的第一和第二锚定件。支架在第一和第二锚固件之间延伸，并且支架静态地定位第一和第二锚定件以及相应的第一和第二基板端部。形状记忆基板被配置为在对应于指定的过载电流范围或电压范围的特定温度范围内或高于指定的过载电流范围或电压范围的过渡时，从应变导电配置转变到断裂非导电配置，并且第一衬底端部从第二衬底端部或高于指定的温度范围，导致开路。

4. 发明申请

US20200381200A1 SHAPE-MEMORY-BASED DEAD-FACING MECHANISMS FOR SEVERING ELECTRICAL CONNECTIONS 审中-公开
公开(公告)号：US20200381200A1
公开(公告)日：2020-12-03
申请号：US16423384
申请日：2019-05-28
申请人： Raytheon Company
发明人： William D. Werries
IPC分类号： H01H37/32 , H01H37/64
摘要： An apparatus includes an electrical switch that includes (i) multiple first electrical contacts and (ii) a second electrical contact configured to bridge the first electrical contacts in order to form at least one electrical connection. The apparatus also includes a shape-memory actuator configured to move the second electrical contact in order to selectively open the electrical switch and break the at least one electrical connection. The shape-memory actuator may be configured to be returned to an original shape and the second electrical contact may be configured to be returned to a bridging position in order to reset the apparatus. The apparatus may further include a shutter member configured to be moved between the first electrical contacts in order to prevent re-bridging of the first electrical contacts and to extend an arc-gap between the first electrical contacts.

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