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1. 发明授权

US10012533B2 Semi-active laser (SAL) receivers and methods of use thereof 有权
公开(公告)号：US10012533B2
公开(公告)日：2018-07-03
申请号：US14996936
申请日：2016-01-15
申请人： Raytheon Company
发明人： Richard H. Wyles , Michael J. Batinica
IPC分类号： G01J1/44
CPC分类号： G01J1/44 , F41G7/226 , F41G7/2293 , G01S3/781 , G01S3/784 , G01S3/786 , G01S7/4863 , G01S7/4873
摘要： A circuit for readout from for readout from a focal plane array having a number of pixels, includes, for each one pixel, an adaptive photodetector load circuit coupled to a detector for the one pixel, a trans-impedance amplifier, the detector being AC coupled to the trans-impedance amplifier, a comparator component, receiving an AC coupled output of the trans-impedance amplifier and comparing the AC coupled output to a predetermined threshold, a sample and hold ring comprising a number charge storage components connected in parallel, each one charge storage component comprising a capacitor in series with an enabling three point switching component and a pulse detection logic circuit receiving an output of the comparator component.

2. 发明申请

US20150243825A1 SIMULTANEOUS DUAL-BAND DETECTOR 审中-公开
标题翻译：同时双线检测器
公开(公告)号：US20150243825A1
公开(公告)日：2015-08-27
申请号：US14191933
申请日：2014-02-27
申请人： Raytheon Company
发明人： Craig Keasler , Justin Gordon Adams Wehner , Richard H. Wyles , Donald F. King , Peter C. Roberts , Christopher L. Mears
IPC分类号： H01L31/101 , H01L31/0352
CPC分类号： H01L31/1013 , G01J2005/202 , H01L27/1446 , H01L27/1463 , H01L31/1032
摘要： A radiation detector having a pair of adjacent mesas disposed on a common layer. The common layer comprises a first semiconductor layer having a first conductivity type and an energy bandgap responsive to radiation in a first spectral region. Each of the mesas comprises: a second semiconductor; and a third semiconductor layer disposed on the second semiconductor layer having the first conductivity type and an energy bandgap responsive to radiation in a second spectral region. The second semiconductor layer may have a conductivity type opposite the first conductivity type or the three layers may provide an nBn or pBp structure. The third semiconductor layer of the second mesa produces minority carriers, in response to the radiation in the second spectral region, flowing as unwanted carriers into the common layer towards the first mesa. A barrier region is disposed in the common layer to prevent the unwanted carriers from passing from the second mesa to the first mesa.
摘要翻译：一种放射线检测器，具有设置在公共层上的一对相邻台面。公共层包括具有第一导电类型的第一半导体层和响应于第一光谱区域中的辐射的能带隙。每个台面包括：第二半导体; 以及设置在具有第一导电类型的第二半导体层上的第三半导体层和响应于第二光谱区域中的辐射的能带隙。第二半导体层可以具有与第一导电类型相反的导电类型，或者三层可以提供nBn或pBp结构。第二台面的第三半导体层响应于第二光谱区域中的辐射而产生少数载流子，作为不想要的载流子朝向第一台面流入公共层。阻挡区域设置在公共层中以防止不需要的载体从第二台面传播到第一台面。

3. 发明授权

US09380244B2 Multi-color superpixel operational constructs for focal plane arrays 有权
标题翻译：用于焦平面阵列的多色超像素操作构造
公开(公告)号：US09380244B2
公开(公告)日：2016-06-28
申请号：US14076039
申请日：2013-11-08
申请人： Raytheon Company
发明人： Richard H. Wyles , Christopher L. Mears , Donald F. King , Peter C. Roberts
IPC分类号： H01L31/00 , H04N5/378 , H01L27/146 , H04N5/33
CPC分类号： H04N5/378 , H01L27/14609 , H04N5/332
摘要： A method for sensing using a multi-band photovoltaic detector, the method including biasing the photovoltaic detector using a bias voltage at a mid-point of a detector substrate bias voltage range, selecting a first band of the multi-band photovoltaic detector, sensing a first current from a first diode of the multi-band photovoltaic detector, the first diode being associated with the first band, selecting a second band of the multi-band photovoltaic detector; and sensing a second current from a second diode of the multi-band photovoltaic detector, the second diode being associated with the second band.
摘要翻译：一种用于使用多波段光伏检测器进行感测的方法，所述方法包括使用在检测器基板偏置电压范围的中点处的偏置电压偏置光伏检测器，选择多波段光伏检测器的第一波段，感测所述第一二极管与所述第一波段相关联，选择所述多波段光伏检测器的第二波段; 以及感测来自所述多波段光伏检测器的第二二极管的第二电流，所述第二二极管与所述第二波段相关联。

4. 发明申请

US20170205283A1 SEMI-ACTIVE LASER (SAL) RECEIVERS AND METHODS OF USE THEREOF 有权
公开(公告)号：US20170205283A1
公开(公告)日：2017-07-20
申请号：US14996936
申请日：2016-01-15
申请人： Raytheon Company
发明人： Richard H. Wyles , Michael J. Batinica
IPC分类号： G01J1/44
CPC分类号： G01J1/44 , F41G7/226 , F41G7/2293 , G01S3/781 , G01S3/784 , G01S3/786 , G01S7/4863 , G01S7/4873
摘要： A circuit for readout from for readout from a focal plane array having a number of pixels, includes, for each one pixel, an adaptive photodetector load circuit coupled to a detector for the one pixel, a trans-impedance amplifier, the detector being AC coupled to the trans-impedance amplifier, a comparator component, receiving an AC coupled output of the trans-impedance amplifier and comparing the AC coupled output to a predetermined threshold, a sample and hold ring comprising a number charge storage components connected in parallel, each one charge storage component comprising a capacitor in series with an enabling three point switching component and a pulse detection logic circuit receiving an output of the comparator component.

5. 发明申请

US20150129746A1 MULTI-COLOR SUPERPIXEL OPERATIONAL CONSTRUCTS FOR FOCAL PLANE ARRAYS 有权
标题翻译：多色超声波操作系统，适用于正面平面阵列
公开(公告)号：US20150129746A1
公开(公告)日：2015-05-14
申请号：US14076039
申请日：2013-11-08
申请人： Raytheon Company
发明人： Richard H. Wyles , Christopher L. Mears , Donald F. King , Peter C. Roberts
IPC分类号： H01L31/02 , H04N5/378
CPC分类号： H04N5/378 , H01L27/14609 , H04N5/332
摘要： A method for sensing using a multi-band photovoltaic detector, the method including biasing the photovoltaic detector using a bias voltage at a mid-point of a detector substrate bias voltage range, selecting a first band of the multi-band photovoltaic detector, sensing a first current from a first diode of the multi-band photovoltaic detector, the first diode being associated with the first band, selecting a second band of the multi-band photovoltaic detector; and sensing a second current from a second diode of the multi-band photovoltaic detector, the second diode being associated with the second band.
摘要翻译：一种用于使用多波段光伏检测器进行感测的方法，所述方法包括使用在检测器基板偏置电压范围的中点处的偏置电压偏置光伏检测器，选择多波段光伏检测器的第一波段，感测所述第一二极管与所述第一波段相关联，选择所述多波段光伏检测器的第二波段; 以及感测来自所述多波段光伏检测器的第二二极管的第二电流，所述第二二极管与所述第二波段相关联。

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