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1. 发明申请

US20120079692A1 ARRAY OF BAW RESONATORS WITH MASK CONTROLLED RESONANT FREQUENCIES 审中-公开
标题翻译： BAR谐振器阵列与面板控制的谐振频率
公开(公告)号：US20120079692A1
公开(公告)日：2012-04-05
申请号：US13326777
申请日：2011-12-15
申请人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
发明人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
IPC分类号： H04R17/00 , H02K15/00
CPC分类号： H03H3/04 , H03H3/007 , H03H3/0076 , H03H3/02 , H03H9/15 , H03H9/171 , H03H9/205 , H03H2003/027 , H03H2003/0414 , H03H2003/0442 , H03H2003/045 , H03H2003/0478 , Y10T29/42 , Y10T29/49005 , Y10T29/49009 , Y10T29/49147 , Y10T29/49155
摘要： Methods that create an array of BAW resonators by patterning a mass load layer to control the resonant frequency of the resonators and resonators formed thereby, are disclosed. Patterning the surface of a mass load layer and introducing apertures with dimensions smaller than the acoustic wavelength, or dimpling the mass load layer, modifies the acoustic path length of the resonator, thereby changing the resonant frequency of the device. Patterns of variable density allow for further tuning the resonators and for individualized tuning of a resonator in an array of resonators. Patterning a reflowable material for the mass load layer, thereby providing a variable pattern density and distribution followed by elevating the temperature of the mass load layer above its melting point causes the material to liquefy and fill into the apertures to redistribute the mass load layer, thereby, upon subsequent cooling, providing resonators with a predetermined desired resonant frequency.
摘要翻译：公开了通过图案化质量负载层来控制由此形成的谐振器和谐振器的谐振频率来产生BAW谐振器阵列的方法。对质量负载层的表面进行图案化并引入具有小于声波长的尺寸的孔，或者使质量负载层变形，来改变谐振器的声路长度，从而改变器件的谐振频率。可变密度的模式允许谐振器的进一步调谐和谐振器阵列中的谐振器的单独调谐。将质量负载层的可回流材料图案化，从而提供可变图案密度和分布，随后将质量负载层的温度升高到其熔点以上，使材料液化并填充到孔中以重新分配质量负载层，由此在随后的冷却中，提供具有预定期望谐振频率的谐振器。

2. 发明申请

US20130300259A1 PROTECTED RESONATOR 审中-公开
标题翻译：保护共振器
公开(公告)号：US20130300259A1
公开(公告)日：2013-11-14
申请号：US13941619
申请日：2013-07-15
申请人： Rajarishi Sinha , L. Richard Carley , Louis Caley Chomas , Hugo Safar
发明人： Rajarishi Sinha , L. Richard Carley , Louis Caley Chomas , Hugo Safar
IPC分类号： H01L41/053
CPC分类号： H01L41/0533 , H03H9/02086 , H03H9/02102 , H03H9/02133 , H03H9/02149 , H03H9/0557 , H03H9/1007 , H03H9/105 , H03H9/175
摘要： A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.
摘要翻译：一种将核心谐振器与环境效应和老化效应隔离的体声波谐振器结构。该结构具有至少部分地设置在两个电极之间的压电层。该结构可以防止污染，封装泄漏以及由于外部效应而改变压电材料，同时仍然提供惯性阻力。该结构具有一个或多个将老化效应限制在等于或低于特定阈值的保护元件。谐振器的行为在谐振的整个带宽上是稳定的，而不仅仅是串联谐振。保护元件的示例包括围绕芯谐振器的材料环，使得周边和边缘相关的环境和老化现象远离芯谐振器，形成在压电层上方或下方的布拉格反射器和形成在压电层上的盖。

3. 发明授权

US08487511B2 Protected resonator 有权
标题翻译：保护谐振器
公开(公告)号：US08487511B2
公开(公告)日：2013-07-16
申请号：US13549676
申请日：2012-07-16
申请人： Rajarishi Sinha , L. Richard Carley , Louis Caley Chomas , Hugo Safar
发明人： Rajarishi Sinha , L. Richard Carley , Louis Caley Chomas , Hugo Safar
IPC分类号： H01L41/09 , H03H9/15
CPC分类号： H01L41/0533 , H03H9/02086 , H03H9/02102 , H03H9/02133 , H03H9/02149 , H03H9/0557 , H03H9/1007 , H03H9/105 , H03H9/175
摘要： A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.
摘要翻译：一种将核心谐振器与环境效应和老化效应隔离的体声波谐振器结构。该结构具有至少部分地设置在两个电极之间的压电层。该结构可以防止污染，封装泄漏以及由于外部效应而改变压电材料，同时仍然提供惯性阻力。该结构具有一个或多个将老化效应限制在等于或低于特定阈值的保护元件。谐振器的行为在谐振的整个带宽上是稳定的，而不仅仅是串联谐振。保护元件的示例包括围绕芯谐振器的材料环，使得周边和边缘相关的环境和老化现象远离芯谐振器，形成在压电层上方或下方的布拉格反射器和形成在压电层上的盖。

4. 发明申请

US20120013224A1 PROTECTED RESONATOR 有权
公开(公告)号：US20120013224A1
公开(公告)日：2012-01-19
申请号：US13246304
申请日：2011-09-27
申请人： Rajarishi Sinha , L. Richard Carley , Louis Caley Chomas , Hugo Safar
发明人： Rajarishi Sinha , L. Richard Carley , Louis Caley Chomas , Hugo Safar
IPC分类号： H01L41/053
CPC分类号： H01L41/0533 , H03H9/02086 , H03H9/02102 , H03H9/02133 , H03H9/02149 , H03H9/0557 , H03H9/1007 , H03H9/105 , H03H9/175
摘要： A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.

5. 发明申请

US20100277237A1 SWITCHABLE POWER COMBINER 有权
标题翻译：可切换电源组合
公开(公告)号：US20100277237A1
公开(公告)日：2010-11-04
申请号：US12693884
申请日：2010-01-26
申请人： Rajarishi Sinha , L. Richard Carley
发明人： Rajarishi Sinha , L. Richard Carley
IPC分类号： H03F1/00
CPC分类号： H03F3/211 , H01L41/044 , H01L41/107 , H03F1/0277 , H03F3/195 , H03F3/245 , H03F3/45475 , H03F2203/21145 , H03F2203/45138
摘要： A switchable power combiner is disclosed. The switchable power combiner has an output section that is a signal source connected to a transformer section. The transformer section has one or more primaries and a common secondary. The transformer primaries and secondary are acoustically coupled. The primaries or/and the secondary are made of switchable piezoelectric material, such that the acoustic coupling between any primary and the secondary can be switched on or off by electrical control, thereby implementing a switchable power combiner. The transformer secondary is connected to an antenna port. The power amplifier output section is segmented and connected to the transformer primaries. The power amplifier output section has a plurality of power amplifiers and a plurality of reactance elements, either fixed or variable. The switchable power combiner generates different linear load lines by switching on and off the coupling between any primary and the secondary.
摘要翻译：公开了一种可切换的功率组合器。可切换功率组合器具有作为连接到变压器部分的信号源的输出部分。变压器部分具有一个或多个初级和一个共同的次级。变压器初级和次级是声学耦合的。原色或/和次级由可切换的压电材料制成，使得可以通过电气控制来打开或关闭任何初级和次级之间的声学耦合，从而实现可切换的功率组合器。变压器次级连接到天线端口。功率放大器输出部分被分段并连接到变压器原色。功率放大器输出部分具有多个功率放大器和多个固定或可变的电抗元件。可切换功率组合器通过接通和断开任何主和次级之间的耦合来生成不同的线性负载线。

6. 发明授权

US09362880B2 Manufacturing method of an array of BAW resonators with mask controlled resonant frequencies 有权
标题翻译：具有掩模控制谐振频率的BAW谐振器阵列的制造方法
公开(公告)号：US09362880B2
公开(公告)日：2016-06-07
申请号：US13326777
申请日：2011-12-15
申请人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
发明人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
IPC分类号： H03H3/02 , H03H9/15 , H03H3/04 , H03H3/007 , H03H9/205 , H03H9/17
CPC分类号： H03H3/04 , H03H3/007 , H03H3/0076 , H03H3/02 , H03H9/15 , H03H9/171 , H03H9/205 , H03H2003/027 , H03H2003/0414 , H03H2003/0442 , H03H2003/045 , H03H2003/0478 , Y10T29/42 , Y10T29/49005 , Y10T29/49009 , Y10T29/49147 , Y10T29/49155
摘要： Methods that create an array of BAW resonators by patterning a mass load layer to control the resonant frequency of the resonators and resonators formed thereby, are disclosed. Patterning the surface of a mass load layer and introducing apertures with dimensions smaller than the acoustic wavelength, or dimpling the mass load layer, modifies the acoustic path length of the resonator, thereby changing the resonant frequency of the device. Patterns of variable density allow for further tuning the resonators and for individualized tuning of a resonator in an array of resonators. Patterning a reflowable material for the mass load layer, thereby providing a variable pattern density and distribution followed by elevating the temperature of the mass load layer above its melting point causes the material to liquefy and fill into the apertures to redistribute the mass load layer, thereby, upon subsequent cooling, providing resonators with a predetermined desired resonant frequency.
摘要翻译：公开了通过图案化质量负载层来控制由此形成的谐振器和谐振器的谐振频率来产生BAW谐振器阵列的方法。对质量负载层的表面进行图案化并引入具有小于声波长的尺寸的孔，或者使质量负载层变形，来改变谐振器的声路长度，从而改变器件的谐振频率。可变密度的模式允许谐振器的进一步调谐和谐振器阵列中的谐振器的单独调谐。将质量负载层的可回流材料图案化，从而提供可变图案密度和分布，随后将质量负载层的温度升高到其熔点以上，使材料液化并填充到孔中以重新分配质量负载层，由此在随后的冷却中，提供具有预定期望谐振频率的谐振器。

7. 发明授权

US08531083B2 Devices having a tunable acoustic path length and methods for making same 失效
公开(公告)号：US08531083B2
公开(公告)日：2013-09-10
申请号：US12391490
申请日：2009-02-24
申请人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
发明人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
IPC分类号： H01L41/08
CPC分类号： H01L41/083 , H01L41/18 , H03H9/0095 , H03H9/15 , H03H9/171 , H03H9/205 , H03H9/38 , H03H9/584 , H03H9/589 , H03H9/605 , H03H2009/02173
摘要： A tunable acoustic resonator device has a piezoelectric medium as a first thin film layer and a tunable crystal medium as a second thin film layer. The tunable crystal medium has a first acoustic behavior over an operating temperature range under a condition of relatively low applied stress and a second acoustic behavior under a condition of relatively high applied stress. The acoustic behaviors are substantially different and, consequently, the different levels of applied stress are used to tune the acoustic resonator device. Compared with the tunable resonator device consisting of only tunable crystal medium, a device having both the piezoelectric and tunable crystal medium has advantages such as larger inherent bandwidth and less nonlinearity with AC signals. The device also requires a smaller applied stress (i.e. bias voltage) to achieve the required frequency tuning.

8. 发明申请

US20100277034A1 ARRAY OF BAW RESONATORS WITH MASK CONTROLLED RESONANT FREQUENCIES 审中-公开
标题翻译： BAR谐振器阵列与面板控制的谐振频率
公开(公告)号：US20100277034A1
公开(公告)日：2010-11-04
申请号：US12721914
申请日：2010-03-11
申请人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
发明人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
IPC分类号： H01L41/04 , H01L41/22
CPC分类号： H03H3/04 , H03H3/007 , H03H3/0076 , H03H3/02 , H03H9/15 , H03H9/171 , H03H9/205 , H03H2003/027 , H03H2003/0414 , H03H2003/0442 , H03H2003/045 , H03H2003/0478 , Y10T29/42 , Y10T29/49005 , Y10T29/49009 , Y10T29/49147 , Y10T29/49155
摘要： Methods that create an array of BAW resonators by patterning a mass load layer to control the resonant frequency of the resonators and resonators formed thereby, are disclosed. Patterning the surface of a mass load layer and introducing apertures with dimensions smaller than the acoustic wavelength, or dimpling the mass load layer, modifies the acoustic path length of the resonator, thereby changing the resonant frequency of the device. Patterns of variable density allow for further tuning the resonators and for individualized tuning of a resonator in an array of resonators. Patterning a reflowable material for the mass load layer, thereby providing a variable pattern density and distribution followed by elevating the temperature of the mass load layer above its melting point causes the material to liquefy and fill into the apertures to redistribute the mass load layer, thereby, upon subsequent cooling, providing resonators with a predetermined desired resonant frequency.
摘要翻译：公开了通过图案化质量负载层来控制由此形成的谐振器和谐振器的谐振频率来产生BAW谐振器阵列的方法。对质量负载层的表面进行图案化并引入具有小于声波长的尺寸的孔，或者使质量负载层变形，来改变谐振器的声路长度，从而改变器件的谐振频率。可变密度的模式允许谐振器的进一步调谐和谐振器阵列中的谐振器的单独调谐。将质量负载层的可回流材料图案化，从而提供可变图案密度和分布，随后将质量负载层的温度升高到其熔点以上，使材料液化并填充到孔中以重新分配质量负载层，由此在随后的冷却中，提供具有预定期望谐振频率的谐振器。

9. 发明授权

US08373519B2 Switchable power combiner 有权
标题翻译：可切换功率组合器
公开(公告)号：US08373519B2
公开(公告)日：2013-02-12
申请号：US12693884
申请日：2010-01-26
申请人： Rajarishi Sinha , L. Richard Carley
发明人： Rajarishi Sinha , L. Richard Carley
IPC分类号： H01P1/10 , H01L41/00
CPC分类号： H03F3/211 , H01L41/044 , H01L41/107 , H03F1/0277 , H03F3/195 , H03F3/245 , H03F3/45475 , H03F2203/21145 , H03F2203/45138
摘要： A switchable power combiner is disclosed. The switchable power combiner has an output section that is a signal source connected to a transformer section. The transformer section has one or more primaries and a common secondary. The transformer primaries and secondary are acoustically coupled. The primaries or/and the secondary are made of switchable piezoelectric material, such that the acoustic coupling between any primary and the secondary can be switched on or off by electrical control, thereby implementing a switchable power combiner. The transformer secondary is connected to an antenna port. The power amplifier output section is segmented and connected to the transformer primaries. The power amplifier output section has a plurality of power amplifiers and a plurality of reactance elements, either fixed or variable. The switchable power combiner generates different linear load lines by switching on and off the coupling between any primary and the secondary.
摘要翻译：公开了一种可切换的功率组合器。可切换功率组合器具有作为连接到变压器部分的信号源的输出部分。变压器部分具有一个或多个初级和一个共同的次级。变压器初级和次级是声学耦合的。原色或/和次级由可切换的压电材料制成，使得可以通过电气控制来打开或关闭任何初级和次级之间的声学耦合，从而实现可切换的功率组合器。变压器次级连接到天线端口。功率放大器输出部分被分段并连接到变压器原色。功率放大器输出部分具有多个功率放大器和多个固定或可变的电抗元件。可切换功率组合器通过接通和断开任何主和次级之间的耦合来生成不同的线性负载线。

10. 发明申请

US20090289526A1 DEVICES HAVING A TUNABLE ACOUSTIC PATH LENGTH AND METHODS FOR MAKING SAME 失效
标题翻译：具有可控气道长度的装置及其制造方法
公开(公告)号：US20090289526A1
公开(公告)日：2009-11-26
申请号：US12391490
申请日：2009-02-24
申请人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
发明人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
IPC分类号： H01L41/04
CPC分类号： H01L41/083 , H01L41/18 , H03H9/0095 , H03H9/15 , H03H9/171 , H03H9/205 , H03H9/38 , H03H9/584 , H03H9/589 , H03H9/605 , H03H2009/02173
摘要： A tunable acoustic resonator device. The device has a piezoelectric medium as a first thin film layer and a tunable crystal medium as a second thin film layer. The tunable crystal medium has a first acoustic behavior over an operating temperature range under a condition of relatively low applied stress and a second acoustic behavior under a condition of relatively high applied stress. The acoustic behaviors are substantially different. The tunable crystal medium has a highly field-polarizable and lattice-deformable, substantially centrosymmetric structure over an operating temperature range under a condition of relatively low applied stress. The tunable crystal medium has a substantially non-centrosymmetric structure over said operating temperature range under a condition of relatively high applied stress. The dielectric permittivity of the tunable crystal medium is at least 100 at the relatively low applied stress. The tunable crystal medium is close to its ferroelectric instability but remains paraelectric throughout the operating temperature range of the device. The phase transition temperature of the tunable crystal medium from paraelectric to ferroelectric state is just below the operating temperature range.
摘要翻译：可调谐声谐振器装置。该器件具有作为第一薄膜层的压电介质和作为第二薄膜层的可调晶体介质。可调谐晶体介质在相对较低的施加应力条件下在工作温度范围内具有第一声学行为，并且在施加应力相对较高的条件下具有第二声学行为。声学行为显着不同。可调晶体介质在相对低的施加应力的条件下，在工作温度范围内具有高场极化和晶格变形，基本上为中心对称的结构。可调谐晶体介质在相对较高的施加应力的条件下，在所述工作温度范围内具有基本上非中心对称的结构。在相对低的施加应力下，可调晶体介质的介电常数至少为100。可调谐晶体介质接近其铁电不稳定性，但在器件的整个工作温度范围内保持平行。可调晶体介质从顺电相到铁电状态的相变温度刚好低于工作温度范围。

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