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    • 5. 发明授权
    • Process for forming microstructures
    • 微结构形成工艺
    • US07271022B2
    • 2007-09-18
    • US11102982
    • 2005-04-11
    • Weilong TangTseng-Yang HsuSalleh IsmailNim Hak TeaMelvin B KhooRaffi GarabedianLakshimikanth Namburi
    • Weilong TangTseng-Yang HsuSalleh IsmailNim Hak TeaMelvin B KhooRaffi GarabedianLakshimikanth Namburi
    • H01L21/00H01L21/4763
    • B81C1/00436B81C1/00666B81C2201/0107B81C2201/0197
    • The present invention relates to a process for forming microstructures on a substrate. A plating surface is applied to a substrate. A first layer of photoresist is applied on top of the plating base. The first layer of photoresist is exposed to radiation in a pattern to render the first layer of photoresist dissolvable in a first pattern. The dissolvable photoresist is removed and a first layer of primary metal is electroplated in the area where the first layer of photoresist was removed. The remainder of the photoresist is then removed and a second layer of photoresist is then applied over the plating base and first layer of primary metal. The second layer of photoresist is then exposed to a second pattern of radiation to render the photoresist dissolvable and the dissolvable photoresist is removed. The second pattern is an area that surrounds the primary structure, but it does not entail the entire substrate. Rather it is an island surrounding the primary metal. The exposed surface of the secondary metal is then machined down to a desired height of the primary metal. The secondary metal is then etched away.
    • 本发明涉及一种在基板上形成微观结构的方法。 将电镀表面施加到基板。 将第一层光致抗蚀剂施加在电镀基底上。 第一层光致抗蚀剂以图案暴露于辐射,以使第一层光致抗蚀剂以第一图案溶解。 去除可溶解的光致抗蚀剂,并且在去除第一层光致抗蚀剂的区域中电镀第一层初级金属。 然后除去光致抗蚀剂的其余部分,然后将第二层光致抗蚀剂涂覆在镀覆基底和第一层金属的第一层上。 然后将第二层光致抗蚀剂暴露于第二辐射图案,以使光致抗蚀剂可溶解并除去可溶解的光致抗蚀剂。 第二图案是围绕一次结构的区域,但不包含整个基板。 相反,它是一个围绕着主要金属的岛屿。 然后将次级金属的暴露表面加工到初级金属的期望高度。 然后将二次金属蚀刻掉。
    • 6. 发明授权
    • Process for forming MEMS
    • MEMS成型工艺
    • US07264984B2
    • 2007-09-04
    • US11019912
    • 2004-12-21
    • Raffi GarabedianSalleh IsmailNim Hak TeaTseng-Yang HsuMelvin B KhooWeilong Tang
    • Raffi GarabedianSalleh IsmailNim Hak TeaTseng-Yang HsuMelvin B KhooWeilong Tang
    • H01L21/44H01L21/302
    • B81C1/00666B81C2201/0109B81C2201/0197
    • The present invention relates to a process for forming microstructures on a substrate. A plating surface is applied to a substrate. A first layer of photoresist is applied on top of the plating base. The first layer of photoresist is exposed to radiation in a pattern to render the first layer of photoresist dissolvable in a first pattern. The dissolvable photoresist is removed and a first layer of primary metal is electroplated in the area where the first layer of photoresist was removed. The remainder of the photoresist is then removed and a second layer of photoresist is then applied over the plating base and first layer of primary metal. The second layer of photoresist is then exposed to a second pattern of radiation to render the photoresist dissolvable and the dissolvable photoresist is removed. The second pattern is an area that surrounds the primary structure, but it does not entail the entire substrate. Rather it is an island surrounding the primary metal. The exposed surface of the secondary metal is then machined down to a desired height of the primary metal. The secondary metal is then etched away.
    • 本发明涉及一种在基板上形成微观结构的方法。 将电镀表面施加到基板。 将第一层光致抗蚀剂施加在电镀基底上。 第一层光致抗蚀剂以图案暴露于辐射,以使第一层光致抗蚀剂以第一图案溶解。 去除可溶解的光致抗蚀剂,并且在去除第一层光致抗蚀剂的区域中电镀第一层初级金属。 然后除去光致抗蚀剂的其余部分,然后将第二层光致抗蚀剂涂覆在镀覆基底和第一层金属的第一层上。 然后将第二层光致抗蚀剂暴露于第二辐射图案,以使光致抗蚀剂可溶解并除去可溶解的光致抗蚀剂。 第二图案是围绕一次结构的区域,但不包含整个基板。 相反,它是一个围绕着主要金属的岛屿。 然后将次级金属的暴露表面加工到初级金属的期望高度。 然后将二次金属蚀刻掉。