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1. 发明申请

US20140082947A1 METHOD FOR CREATING ATOMICALLY SHARP EDGES ON OBJECTS MADE OF CRYSTAL MATERIAL 审中-公开
标题翻译：用于在晶体材料物体上形成原子形键的方法
公开(公告)号：US20140082947A1
公开(公告)日：2014-03-27
申请号：US14035217
申请日：2013-09-24
申请人： RUBICON TECHNOLOGY, INC.
发明人： SUNIL PHATAK , Faisal Nabulsi
IPC分类号： B26B9/00
CPC分类号： B26B9/00 , C30B29/20 , C30B33/10
摘要： A process to make atomically sharp cutting devices is described. The process may provide for a cost effective and efficient technique of producing the atomically sharp cutting devices made from single crystal material such as, for example, sapphire, silicon carbide, silicon, and the like. The process may include identifying and choosing a preferred geometric orientation of the crystal material where cleavage can be promoted along a preferred natural plane of the single crystal material, thus ultimately producing an atomically sharp edge. The single crystal material may be covered at select surface locations by a photo-resist material arranged in a predetermined alignment with reference to the preferred plane to prevent etching at unexposed surface portions while permitting etching at exposed surface portions of the single crystal material. An atomic edge may be created by physical cleaving once the etching has reached a predetermined end-point.
摘要翻译：描述了制造原子锋利的切割装置的过程。该方法可以提供生产由诸如蓝宝石，碳化硅，硅等的单晶材料制成的原子锋利切割装置的成本有效和有效的技术。该方法可以包括识别和选择晶体材料的优选几何取向，其中可以沿着单晶材料的优选天然平面促进裂解，从而最终产生原子锋利的边缘。可以通过相对于优选平面以预定对准布置的光刻胶材料在选择的表面位置处覆盖单晶材料，以防止在未曝光的表面部分处的蚀刻，同时允许在单晶材料的暴露表面部分处的蚀刻。一旦蚀刻达到预定的终点，就可以通过物理分裂来产生原子边缘。

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