会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Semiconductor device and switching regulator using the device
    • 半导体器件和开关稳压器使用该器件
    • US08964343B2
    • 2015-02-24
    • US14051792
    • 2013-10-11
    • Rohm Co., Ltd.
    • Kazuhiro MurakamiMikiya DoiYosuke Fukumoto
    • H02H9/00H02M1/32H03K17/082H02M1/08H02M3/156
    • H02M1/32H02M1/08H02M3/156H03K17/0822
    • The semiconductor device according to the present invention has an n-channel output transistor wherein an input voltage is impressed on a drain, and a pulsed switching voltage that corresponds to a switching drive of the transistor is brought out from a source; a bootstrap circuit for generating a boost voltage enhanced by a predetermined electric potential above the switching voltage; an internal circuit for receiving a supply of the boost voltage to generate a switching drive signal, and supplying the signal to a gate of the output transistor; an overvoltage protection circuit for monitoring an electric potential difference between the switching voltage and the boost voltage, and generating an overvoltage detection signal; and a switching element for establishing/blocking electrical conduction between the internal circuit and the end impressed with the boost voltage, in accordance with the overvoltage detection signal.
    • 根据本发明的半导体器件具有n沟道输出晶体管,其中输入电压施加在漏极上,并且从源极引出对应于晶体管的开关驱动的脉冲切换电压; 一个自举电路,用于产生一高于开关电压的预定电位增强的升压电压; 内部电路,用于接收升压电压的供给以产生开关驱动信号,并将该信号提供给输出晶体管的栅极; 用于监视开关电压和升压电压之间的电位差的过电压保护电路,以及产生过电压检测信号; 以及用于根据过电压检测信号建立/阻断内部电路和施加有升压电压的端部之间的导通的开关元件。
    • 4. 发明申请
    • SEMICONDUCTOR DEVICE AND SWITCHING REGULATOR USING THE DEVICE
    • 半导体器件和使用器件的开关稳压器
    • US20140036556A1
    • 2014-02-06
    • US14051792
    • 2013-10-11
    • Rohm Co., Ltd.
    • Kazuhiro MurakamiMikiya DoiYosuke Fukumoto
    • H02M1/32H02M1/08H02M3/156
    • H02M1/32H02M1/08H02M3/156H03K17/0822
    • The semiconductor device according to the present invention has an n-channel output transistor wherein an input voltage is impressed on a drain, and a pulsed switching voltage that corresponds to a switching drive of the transistor is brought out from a source; a bootstrap circuit for generating a boost voltage enhanced by a predetermined electric potential above the switching voltage; an internal circuit for receiving a supply of the boost voltage to generate a switching drive signal, and supplying the signal to a gate of the output transistor; an overvoltage protection circuit for monitoring an electric potential difference between the switching voltage and the boost voltage, and generating an overvoltage detection signal; and a switching element for establishing/blocking electrical conduction between the internal circuit and the end impressed with the boost voltage, in accordance with the overvoltage detection signal.
    • 根据本发明的半导体器件具有n沟道输出晶体管,其中输入电压施加在漏极上,并且从源极引出对应于晶体管的开关驱动的脉冲切换电压; 一个自举电路,用于产生一高于开关电压的预定电位增强的升压电压; 内部电路,用于接收升压电压的供给以产生开关驱动信号,并将该信号提供给输出晶体管的栅极; 用于监视开关电压和升压电压之间的电位差的过电压保护电路,以及产生过电压检测信号; 以及用于根据过电压检测信号建立/阻断内部电路和施加有升压电压的端部之间的导通的开关元件。