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    • 2. 发明授权
    • Nitride semiconductor device and manufacturing method thereof
    • 氮化物半导体器件及其制造方法
    • US09293573B2
    • 2016-03-22
    • US13899107
    • 2013-05-21
    • ROHM CO., LTD.
    • Minoru AkutsuTetsuya Fujiwara
    • H01L29/66H01L29/78H01L29/51H01L29/778H01L29/43H01L29/20
    • H01L29/78H01L29/2003H01L29/432H01L29/513H01L29/517H01L29/518H01L29/66462H01L29/66477H01L29/7786
    • Provided are a nitride semiconductor device having an excellent boundary between a nitride semiconductor and a gate insulating film, resulting in improved device characteristics, and a manufacturing method therefor. The nitride semiconductor device includes: an electron transport layer made of a nitride semiconductor; an electron supply layer layered on the electron transport layer, the electron supply layer being made of a nitride semiconductor including Al and having an Al composition different from that of the electron transport layer; a source electrode and a drain electrode formed on the electron supply layer with a gap therebetween; a gate insulating film covering the surface of the electron supply layer between the source electrode and the drain electrode; a passivation film covering a surface of the gate insulating film and having an opening between the source electrode and the drain electrode; and a gate electrode having a main gate body in the opening facing the electron supply layer through the gate insulating film.
    • 本发明提供一种氮化物半导体与栅极绝缘膜之间具有极好的边界的氮化物半导体器件,从而提高器件特性及其制造方法。 氮化物半导体器件包括:由氮化物半导体制成的电子传输层; 层叠在所述电子传输层上的电子供给层,所述电子供给层由包含Al并且具有不同于所述电子传输层的Al组成的氮化物半导体构成; 形成在电子供给层上的源电极和漏电极,其间具有间隙; 覆盖源电极和漏电极之间的电子供给层的表面的栅极绝缘膜; 覆盖所述栅极绝缘膜的表面并且在所述源电极和所述漏电极之间具有开口的钝化膜; 以及栅电极,所述栅电极通过所述栅极绝缘膜在所述开口中面向所述电子供给层。