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1. 发明授权

US09837521B2 Nitride semiconductor device and fabrication method therefor 有权
公开(公告)号：US09837521B2
公开(公告)日：2017-12-05
申请号：US14434674
申请日：2013-10-07
申请人： ROHM CO., LTD.
发明人： Kenji Yamamoto , Tetsuya Fujiwara , Minoru Akutsu , Ken Nakahara , Norikazu Ito
IPC分类号： H01L29/423 , H01L29/778 , H01L29/66 , H01L29/78 , H01L21/02 , H01L21/306 , H01L21/28 , H01L29/417 , H01L21/265 , H01L21/311 , H01L29/51 , H01L29/20
CPC分类号： H01L29/7787 , H01L21/02241 , H01L21/02255 , H01L21/0228 , H01L21/02694 , H01L21/2654 , H01L21/26586 , H01L21/28264 , H01L21/30621 , H01L21/31116 , H01L29/2003 , H01L29/41725 , H01L29/41758 , H01L29/42316 , H01L29/4236 , H01L29/42368 , H01L29/51 , H01L29/513 , H01L29/517 , H01L29/66462 , H01L29/66522 , H01L29/78
摘要： A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervenes therebetween.

2. 发明授权

US09293573B2 Nitride semiconductor device and manufacturing method thereof 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US09293573B2
公开(公告)日：2016-03-22
申请号：US13899107
申请日：2013-05-21
申请人： ROHM CO., LTD.
发明人： Minoru Akutsu , Tetsuya Fujiwara
IPC分类号： H01L29/66 , H01L29/78 , H01L29/51 , H01L29/778 , H01L29/43 , H01L29/20
CPC分类号： H01L29/78 , H01L29/2003 , H01L29/432 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66462 , H01L29/66477 , H01L29/7786
摘要： Provided are a nitride semiconductor device having an excellent boundary between a nitride semiconductor and a gate insulating film, resulting in improved device characteristics, and a manufacturing method therefor. The nitride semiconductor device includes: an electron transport layer made of a nitride semiconductor; an electron supply layer layered on the electron transport layer, the electron supply layer being made of a nitride semiconductor including Al and having an Al composition different from that of the electron transport layer; a source electrode and a drain electrode formed on the electron supply layer with a gap therebetween; a gate insulating film covering the surface of the electron supply layer between the source electrode and the drain electrode; a passivation film covering a surface of the gate insulating film and having an opening between the source electrode and the drain electrode; and a gate electrode having a main gate body in the opening facing the electron supply layer through the gate insulating film.
摘要翻译：本发明提供一种氮化物半导体与栅极绝缘膜之间具有极好的边界的氮化物半导体器件，从而提高器件特性及其制造方法。氮化物半导体器件包括：由氮化物半导体制成的电子传输层; 层叠在所述电子传输层上的电子供给层，所述电子供给层由包含Al并且具有不同于所述电子传输层的Al组成的氮化物半导体构成; 形成在电子供给层上的源电极和漏电极，其间具有间隙; 覆盖源电极和漏电极之间的电子供给层的表面的栅极绝缘膜; 覆盖所述栅极绝缘膜的表面并且在所述源电极和所述漏电极之间具有开口的钝化膜; 以及栅电极，所述栅电极通过所述栅极绝缘膜在所述开口中面向所述电子供给层。

3. 发明申请

US20150279982A1 NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20150279982A1
公开(公告)日：2015-10-01
申请号：US14434674
申请日：2013-10-07
申请人： ROHM CO., LTD.
发明人： Kenji Yamamoto , Tetsuya Fujiwara , Minoru Akutsu , Ken Nakahara , Norikazu Ito
IPC分类号： H01L29/778 , H01L29/66 , H01L21/265 , H01L21/311 , H01L29/417 , H01L21/02 , H01L29/51
CPC分类号： H01L29/7787 , H01L21/02241 , H01L21/02255 , H01L21/0228 , H01L21/02694 , H01L21/2654 , H01L21/26586 , H01L21/28264 , H01L21/30621 , H01L21/31116 , H01L29/2003 , H01L29/41725 , H01L29/41758 , H01L29/42316 , H01L29/4236 , H01L29/42368 , H01L29/51 , H01L29/513 , H01L29/517 , H01L29/66462 , H01L29/66522 , H01L29/78
摘要： A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervenes therebetween.
摘要翻译：氮化物半导体器件包括由氮化物半导体形成的电子迁移层（103），形成在电子转移层（103）上的电子供给层（104），其由组成不同的氮化物半导体形成从电子传输层103形成有从表面到达电子传输层103的凹部109，形成在电子传输层103的表面上的热氧化膜111）在所述凹部（109）内露出嵌入在所述凹部（109）内以与所述热氧化膜（111）接触的栅极绝缘膜（110），形成在所述凹部栅极绝缘膜（110），并且与穿过热氧化膜（111）和栅极绝缘膜（110）的电子传输层（103）相反，以及源极（106）和漏极（107），其中以一定的间隔设置在电子供给层（104）上，使得栅极e 引导器（108）介于其间。

4. 发明授权

US11777024B2 Nitride semiconductor device and fabrication method therefor 有权
公开(公告)号：US11777024B2
公开(公告)日：2023-10-03
申请号：US17212619
申请日：2021-03-25
申请人： ROHM CO., LTD.
发明人： Kenji Yamamoto , Tetsuya Fujiwara , Minoru Akutsu , Ken Nakahara , Norikazu Ito
IPC分类号： H01L29/778 , H01L21/76 , H01L29/66 , H01L29/417 , H01L29/423 , H01L29/78 , H01L21/02 , H01L21/306 , H01L21/28 , H01L21/265 , H01L21/311 , H01L29/51 , H01L29/20
CPC分类号： H01L29/7787 , H01L21/0228 , H01L21/02241 , H01L21/02255 , H01L21/02694 , H01L21/2654 , H01L21/26586 , H01L21/28264 , H01L21/30621 , H01L21/31116 , H01L21/76 , H01L29/41725 , H01L29/41758 , H01L29/4236 , H01L29/42316 , H01L29/42368 , H01L29/51 , H01L29/66242 , H01L29/66462 , H01L29/66522 , H01L29/78 , H01L29/2003 , H01L29/513 , H01L29/517
摘要： A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervenes therebetween.

5. 发明授权

US10686064B2 Nitride semiconductor device and fabrication method therefor 有权
公开(公告)号：US10686064B2
公开(公告)日：2020-06-16
申请号：US16295777
申请日：2019-03-07
申请人： ROHM CO., LTD.
发明人： Kenji Yamamoto , Tetsuya Fujiwara , Minoru Akutsu , Ken Nakahara , Norikazu Ito
IPC分类号： H01L29/778 , H01L29/423 , H01L21/76 , H01L29/66 , H01L29/78 , H01L21/02 , H01L21/306 , H01L21/28 , H01L29/417 , H01L21/265 , H01L21/311 , H01L29/51 , H01L29/20
摘要： A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervenes therebetween.

6. 发明授权

US10991818B2 Nitride semiconductor device and fabrication method therefor 有权
公开(公告)号：US10991818B2
公开(公告)日：2021-04-27
申请号：US15930070
申请日：2020-05-12
申请人： ROHM CO., LTD.
发明人： Kenji Yamamoto , Tetsuya Fujiwara , Minoru Akutsu , Ken Nakahara , Norikazu Ito
IPC分类号： H01L29/778 , H01L21/76 , H01L29/66 , H01L29/417 , H01L29/423 , H01L29/78 , H01L21/02 , H01L21/306 , H01L21/28 , H01L21/265 , H01L21/311 , H01L29/51 , H01L29/20
摘要： A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervenes therebetween.

7. 发明授权

US10256335B2 Nitride semiconductor device and fabrication method therefor 有权
公开(公告)号：US10256335B2
公开(公告)日：2019-04-09
申请号：US15672112
申请日：2017-08-08
申请人： ROHM CO., LTD.
发明人： Kenji Yamamoto , Tetsuya Fujiwara , Minoru Akutsu , Ken Nakahara , Norikazu Ito
IPC分类号： H01L29/66 , H01L21/76 , H01L29/778 , H01L29/423 , H01L29/78 , H01L21/02 , H01L21/306 , H01L21/28 , H01L29/417 , H01L21/265 , H01L21/311 , H01L29/51 , H01L29/20
摘要： A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervenes therebetween.

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