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1. 发明申请

US20220336682A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220336682A1
公开(公告)日：2022-10-20
申请号：US17762022
申请日：2020-11-25
申请人： ROHM CO., LTD.
发明人： Tadao YUKI , Takeshi ISHIDA
IPC分类号： H01L29/861 , H01L29/06 , H01L29/66 , H01L29/08 , H01L29/10 , H01L29/423 , H01L29/36
摘要： A semiconductor device includes a semiconductor layer of a first conductivity type that has a main surface and that includes a device region, a base region of a second conductivity type that is formed in a surface layer portion of the main surface at the device region, a source region of the first conductivity type that is formed in a surface layer portion of the base region at an interval inward from a peripheral portion of the base region and that defines a channel region with the semiconductor layer, a base contact region of the second conductivity type that is formed in a region different from the source region at the surface layer portion of the base region and that has an impurity concentration exceeding an impurity concentration of the base region, a well region of the first conductivity type that is formed in the surface layer portion of the main surface at an interval from the base region at the device region and that defines a drift region with the base region, a drain region of the first conductivity type that is formed in a surface layer portion of the well region, an impurity region of the second conductivity type that is formed in the surface layer portion of the well region and that is electrically connected to the drain region, and a gate structure that has a gate insulating film covering the channel region on the main surface and a gate electrode facing the channel region on the gate insulating film and electrically connected to the source region and the base contact region.

2. 发明公开

US20240395796A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20240395796A1
公开(公告)日：2024-11-28
申请号：US18794649
申请日：2024-08-05
申请人： ROHM CO., LTD.
发明人： Tadao YUKI , Michiko KIHARA
IPC分类号： H01L27/02
CPC分类号： H01L27/0255
摘要： In the present invention, a second MOSFET comprises: a body region; a drain region extending in the y direction; a first well region formed away from the drain region in the x direction; a gate electrode formed on a gate insulating film and a field oxide film; a source region formed on the surface of a first well region; an exposed region formed at a position different from the source region in the first well region as viewed from the z direction; a first contact part joined to the source region; a second contact part Schottky-joined to the exposed region; a third contact part joined to the gate electrode; and source wiring that electrically interconnects the first contact part, the second contact part, and the third contact part.

3. 发明公开

US20240290778A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20240290778A1
公开(公告)日：2024-08-29
申请号：US18656653
申请日：2024-05-07
申请人： ROHM CO., LTD.
发明人： Tadao YUKI , Satoshi TANAKA
IPC分类号： H01L27/02 , H01L27/06 , H01L29/78
CPC分类号： H01L27/0296 , H01L27/0255 , H01L27/0629 , H01L29/7817
摘要： A semiconductor device includes, as each of a first electrostatic protection diode, a second electrostatic protection diode, and a third electrostatic protection diode, a lateral NDMOS transistor thyristorized by having a p-type dopant region formed in its drain. For example, the anode of the first electrostatic protection diode is connected to a first signal terminal; the anode of the second electrostatic protection diode is connected to a second signal terminal; and the anode of the third electrostatic protection diode is connected to a ground terminal. The cathodes of the first, second, and third electrostatic protection diodes are connected together.

4. 发明申请

US20230131034A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20230131034A1
公开(公告)日：2023-04-27
申请号：US17912013
申请日：2021-03-24
申请人： ROHM CO., LTD.
发明人： Tadao YUKI
IPC分类号： H01L27/02
摘要： A semiconductor device includes a semiconductor layer, a first region of a first conductivity type formed in the semiconductor layer and connected to a ground potential, a second region of a second conductivity type formed in the semiconductor layer, an insulating film formed on the semiconductor layer and covering the first region and the second region, an internal circuit, signal terminal for driving the internal circuit or to be driven by the internal circuit, a first wiring connecting the internal circuit and the signal terminal, a resistance element formed on the insulating film and interposed halfway through the first wiring, the resistance element including a first resistor facing the second region across the insulating film, and a second wiring connected to the first wiring on a side closer to the signal terminal than the resistance element and connecting the first wiring and the second region.

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