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    • 1. 发明申请
      US20230131034A1 SEMICONDUCTOR DEVICE 有权
    • SEMICONDUCTOR DEVICE
    • US20230131034A1
    • 2023-04-27
    • US17912013
    • 2021-03-24
    • ROHM CO., LTD.
    • Tadao YUKI
    • H01L27/02
    • A semiconductor device includes a semiconductor layer, a first region of a first conductivity type formed in the semiconductor layer and connected to a ground potential, a second region of a second conductivity type formed in the semiconductor layer, an insulating film formed on the semiconductor layer and covering the first region and the second region, an internal circuit, signal terminal for driving the internal circuit or to be driven by the internal circuit, a first wiring connecting the internal circuit and the signal terminal, a resistance element formed on the insulating film and interposed halfway through the first wiring, the resistance element including a first resistor facing the second region across the insulating film, and a second wiring connected to the first wiring on a side closer to the signal terminal than the resistance element and connecting the first wiring and the second region.
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 2. 发明申请
      US20220336682A1 SEMICONDUCTOR DEVICE 有权
    • SEMICONDUCTOR DEVICE
    • US20220336682A1
    • 2022-10-20
    • US17762022
    • 2020-11-25
    • ROHM CO., LTD.
    • Tadao YUKI , Takeshi ISHIDA
    • H01L29/861 , H01L29/06 , H01L29/66 , H01L29/08 , H01L29/10 , H01L29/423 , H01L29/36
    • A semiconductor device includes a semiconductor layer of a first conductivity type that has a main surface and that includes a device region, a base region of a second conductivity type that is formed in a surface layer portion of the main surface at the device region, a source region of the first conductivity type that is formed in a surface layer portion of the base region at an interval inward from a peripheral portion of the base region and that defines a channel region with the semiconductor layer, a base contact region of the second conductivity type that is formed in a region different from the source region at the surface layer portion of the base region and that has an impurity concentration exceeding an impurity concentration of the base region, a well region of the first conductivity type that is formed in the surface layer portion of the main surface at an interval from the base region at the device region and that defines a drift region with the base region, a drain region of the first conductivity type that is formed in a surface layer portion of the well region, an impurity region of the second conductivity type that is formed in the surface layer portion of the well region and that is electrically connected to the drain region, and a gate structure that has a gate insulating film covering the channel region on the main surface and a gate electrode facing the channel region on the gate insulating film and electrically connected to the source region and the base contact region.
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
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