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1. 发明公开

US20240106196A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
公开(公告)号：US20240106196A1
公开(公告)日：2024-03-28
申请号：US18529665
申请日：2023-12-05
申请人： ROHM CO., LTD.
发明人： Koki SAKAMOTO , Yoshinori TANAKA
IPC分类号： H01S5/042 , H01S5/0231 , H01S5/024 , H01S5/068
CPC分类号： H01S5/042 , H01S5/0231 , H01S5/02469 , H01S5/06825 , H01L24/05
摘要： A semiconductor light emitting device includes a light emitting module, a stem, and a surrounding member. The stem includes a conductive base and a conductive heat sink extending upright from the base. The light emitting module is mounted on the heat sink. The surrounding member is arranged on the base and surrounds the light emitting module and the heat sink. The light emitting module includes a substrate mounted on the heat sink, a light emitting element mounted on the substrate, and a light emitting element drive circuit mounted on the substrate. The light emitting element drive circuit includes a transistor configured to drive the light emitting element. The transistor is a vertical MOSFET mounted on the substrate.

2. 发明公开

US20240396295A1 SEMICONDUCTOR LASER DEVICE 审中-公开
公开(公告)号：US20240396295A1
公开(公告)日：2024-11-28
申请号：US18791710
申请日：2024-08-01
申请人： ROHM CO., LTD.
发明人： Atsushi YAMAGUCHI , Koki SAKAMOTO
IPC分类号： H01S5/02345 , H01S5/02315 , H01S5/042 , H01S5/06
CPC分类号： H01S5/02345 , H01S5/02315 , H01S5/042 , H01S5/0608
摘要： Semiconductor laser device A1 includes semiconductor laser element 4, switching element 5 having gate electrode 52, source electrode 53 and drain electrode 54, and support member 1 having conductive part 3 that forms a conduction path to switching element 5 and semiconductor laser element 4 and supports semiconductor laser element 4 and switching element 5. Conductive part 3 has front surface first section 311 spaced apart from semiconductor laser element 4. Semiconductor laser device A1 includes at least one first wire 71 connected to source electrode 53 of switching element 5 and semiconductor laser element 4 and also at least one second wire 72 connected to source electrode 53 of switching element 5 and front surface first section 311 of conductive part 3. Such an arrangement reduces the inductance component of semiconductor laser device A1.

3. 发明公开

US20240313501A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING UNIT 审中-公开
公开(公告)号：US20240313501A1
公开(公告)日：2024-09-19
申请号：US18672653
申请日：2024-05-23
申请人： ROHM CO., LTD.
发明人： Koki SAKAMOTO
IPC分类号： H01S5/023 , H01S5/024 , H01S5/042
CPC分类号： H01S5/023 , H01S5/02469 , H01S5/042
摘要： This semiconductor light emitting device comprises: a substrate that has a substrate front surface, a substrate back surface, and substrate lateral surfaces; front-surface-side wiring; back-surface-side wiring; and a semiconductor light emitting element that has a light emitting element lateral surface as a light emitting surface. The substrate lateral surfaces include a first substrate lateral surface which faces the same side as the light emitting element lateral surface that is a light emitting surface, and a second substrate lateral surface on the reverse side from the first substrate lateral surface. The semiconductor light emitting element is disposed so as to be offset more toward the first substrate lateral surface than the second substrate lateral surface. Provided to the first substrate lateral surface is an end surface through hole which passes through the substrate in the thickness direction of the substrate and which connects the front-surface-side wiring and the back-surface-side wiring.

4. 发明申请

US20210408758A1 SEMICONDUCTOR LASER DEVICE 有权
公开(公告)号：US20210408758A1
公开(公告)日：2021-12-30
申请号：US17289671
申请日：2019-11-20
申请人： ROHM CO., LTD.
发明人： Atsushi YAMAGUCHI , Koki SAKAMOTO
IPC分类号： H01S5/02345 , H01S5/042
摘要： Semiconductor laser device A1 includes semiconductor laser element 4, switching element 5 having gate electrode 52, source electrode 53 and drain electrode 54, and support member 1 having conductive part 3 that forms a conduction path to switching element 5 and semiconductor laser element 4 and supports semiconductor laser element 4 and switching element 5. Conductive part 3 has front surface first section 311 spaced apart from semiconductor laser element 4. Semiconductor laser device A1 includes at least one first wire 71 connected to source electrode 53 of switching element 5 and semiconductor laser element 4 and also at least one second wire 72 connected to source electrode 53 of switching element 5 and front surface first section 311 of conductive part 3. Such an arrangement reduces the inductance component of semiconductor laser device A1.

5. 发明公开

US20230142319A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20230142319A1
公开(公告)日：2023-05-11
申请号：US17916741
申请日：2021-04-01
申请人： ROHM CO., LTD.
发明人： Koki SAKAMOTO , Kazunori FUJI
IPC分类号： H01S5/042 , H01S5/022 , H01S5/0239
CPC分类号： H01S5/0428 , H01S5/022 , H01S5/0239 , H01S5/04256
摘要： A semiconductor light-emitting device includes light-emitting element, sealing resin and conductor. The light-emitting element has first and second surfaces spaced apart in a thickness direction with first element electrode on the first surface and with second element electrode on the second surface. The sealing resin covers at least the second surface. The conductor, forming a conduction path to the light-emitting element, includes a first interconnecting portion, an embedded portion, and a second interconnecting portion. The sealing resin has a cavity extending in the thickness direction and connected to the second element electrode. The first interconnecting portion is electrically connected to the first element electrode and extends in a direction crossing the thickness direction. The embedded portion is in the cavity and connected to the second element electrode. The second interconnecting portion is connected to the embedded portion and extends in the direction crossing the thickness direction.

6. 发明申请

US20220285911A1 SEMICONDUCTOR LASER DEVICE 有权
公开(公告)号：US20220285911A1
公开(公告)日：2022-09-08
申请号：US17597426
申请日：2020-07-02
申请人： ROHM CO., LTD.
发明人： Atsushi YAMAGUCHI , Koki SAKAMOTO
IPC分类号： H01S5/042 , H01S5/0233
摘要： This semiconductor laser device comprises: a semiconductor laser element; a switching element connected in series to the semiconductor laser element, the switching element having a gate electrode, a drain electrode, and a source electrode; capacitors connected in parallel to the semiconductor laser element and the switching element; first drive electroconductive parts to which first terminals of the capacitors are connected; a second drive electroconductive part positioned apart from the first drive electroconductive parts; first drive connection members that connect the first drive electroconductive parts and the source electrode; and a second drive connection member that connects the second drive electroconductive part and the source electrode.

7. 发明申请

US20140071525A1 OPTICAL FILTER 有权
标题翻译：光学过滤器
公开(公告)号：US20140071525A1
公开(公告)日：2014-03-13
申请号：US14078610
申请日：2013-11-13
申请人： ROHM CO., LTD.
发明人： Ken NAKAHARA , Shunsuke AKASAKA , Koki SAKAMOTO , Tetsuo FUJII , Shunsuke FURUSE , Soichiro ARIMURA
IPC分类号： G02B5/20
CPC分类号： G02B5/208 , G01J1/1626 , G01J1/429 , G02B5/285
摘要： Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range λ and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range λ is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.
摘要翻译：在支撑基板上形成两个光接收元件。第一光接收元件由p型层，n型层，光吸收半导体层，阳极电极，阴极电极，保护膜等形成。第二光接收元件由p 型层，n型层，透射膜，阳极电极，阴极电极，保护膜等。光吸收半导体层吸收波长λ范围内的光，并且设置得比光接收表面更靠近光接收表面 pn结区域。透射膜没有光吸收范围，并且比pn结区域更靠近光接收表面。通过使用来自第一光接收元件的检测信号和来自第二光接收元件的检测信号的计算来测量波长范围λ的光量。

8. 发明公开

US20230420909A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20230420909A1
公开(公告)日：2023-12-28
申请号：US18252291
申请日：2021-10-27
申请人： ROHM CO., LTD.
发明人： Koki SAKAMOTO , Kazunori FUJI , Atsushi YAMAGUCHI
IPC分类号： H01S5/02234 , H01S5/02345
CPC分类号： H01S5/02234 , H01S5/02345
摘要： This semiconductor light-emitting device includes a substrate having a substrate main surface, a semiconductor light-emitting element having a light-emitting element main surface mounted on the substrate main surface and facing the same side as the substrate main surface, and a light-emitting element side surface that is a light-emitting surface facing a direction intersecting the light-emitting element main surface, a switching element and a capacitor mounted on the substrate main surface and serving as drive elements used in driving the semiconductor light-emitting element, a translucent member formed from a material having a greater linear expansion coefficient than the substrate and transmitting light emitted from the light-emitting side surface, the translucent member covering the light-emitting element side surface, and a sealing resin formed from a material that has a smaller linear expansion coefficient than the translucent member, the sealing resin sealing the semiconductor light-emitting element, the switching element, and the capacitor.

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