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1. 发明申请

US20200227405A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20200227405A1
公开(公告)日：2020-07-16
申请号：US16827187
申请日：2020-03-23
申请人： ROHM CO., LTD.
发明人： Kohei SHINSHO
IPC分类号： H01L27/06 , H01L29/06 , H01L29/861 , H01L29/40 , H01L29/739 , H01L27/07 , H01L29/08
摘要： A semiconductor device includes a semiconductor layer of a first conductivity type having a first principal surface on one side and a second principal surface on the other side, the semiconductor layer in which a device formation region and an outer region outside the device formation region are set, a channel region of a second conductivity type formed in a surface layer portion of the first principal surface of the semiconductor layer in the device formation region, an emitter region of a first conductivity type formed in a surface layer portion of the channel region, a gate electrode formed at the first principal surface of the semiconductor layer in the device formation region, the gate electrode facing the channel region across a gate insulating film, a collector region of a second conductivity type formed in a surface layer portion of the second principal surface of the semiconductor layer in the device formation region, an inner cathode region of a first conductivity type formed in the surface layer portion of the second principal surface of the semiconductor layer in the device formation region, and an outer cathode region of a first conductivity type formed in the surface layer portion of the second principal surface of the semiconductor layer in the outer region.

2. 发明申请

US20180226400A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20180226400A1
公开(公告)日：2018-08-09
申请号：US15878863
申请日：2018-01-24
申请人： ROHM CO., LTD.
发明人： Kohei SHINSHO
IPC分类号： H01L27/06 , H01L29/06 , H01L29/10 , H01L29/40 , H01L29/739 , H01L29/861
CPC分类号： H01L27/0664 , H01L27/0727 , H01L29/0619 , H01L29/0623 , H01L29/0638 , H01L29/0661 , H01L29/0834 , H01L29/1095 , H01L29/404 , H01L29/7395 , H01L29/7396 , H01L29/7397 , H01L29/861
摘要： A semiconductor device includes a semiconductor layer of a first conductivity type having a first principal surface on one side and a second principal surface on the other side, the semiconductor layer in which a device formation region and an outer region outside the device formation region are set, a channel region of a second conductivity type formed in a surface layer portion of the first principal surface of the semiconductor layer in the device formation region, an emitter region of a first conductivity type formed in a surface layer portion of the channel region, a gate electrode formed at the first principal surface of the semiconductor layer in the device formation region, the gate electrode facing the channel region across a gate insulating film, a collector region of a second conductivity type formed in a surface layer portion of the second principal surface of the semiconductor layer in the device formation region, an inner cathode region of a first conductivity type formed in the surface layer portion of the second principal surface of the semiconductor layer in the device formation region, and an outer cathode region of a first conductivity type formed in the surface layer portion of the second principal surface of the semiconductor layer in the outer region.

3. 发明申请

US20180012982A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20180012982A1
公开(公告)日：2018-01-11
申请号：US15640825
申请日：2017-07-03
申请人： ROHM CO., LTD.
发明人： Kohei SHINSHO
IPC分类号： H01L29/739 , H01L29/66
CPC分类号： H01L29/7397 , H01L23/482 , H01L29/0696 , H01L29/083 , H01L29/0834 , H01L29/41 , H01L29/41708 , H01L29/41716 , H01L29/66348 , H01L29/7393 , H01L29/7394
摘要： A semiconductor device includes a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof, a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer, an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer, a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region, a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region, a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region and including a continuously laid around line-shaped pattern, and a gate electrode formed at the first principal surface side of the semiconductor layer so as to face the channel region across an insulating film.

4. 发明申请

US20190109219A1 Insulated gate bipolar transistor and diode 审中-公开
公开(公告)号：US20190109219A1
公开(公告)日：2019-04-11
申请号：US16208049
申请日：2018-12-03
申请人： ROHM CO., LTD.
发明人： Kohei SHINSHO
IPC分类号： H01L29/739 , H01L29/66 , H01L29/417
摘要： A semiconductor device includes a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof, a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer, an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer, a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region, a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region, a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region and including a continuously laid around line-shaped pattern, and a gate electrode formed at the first principal surface side of the semiconductor layer so as to face the channel region across an insulating film.

5. 发明申请

US20170133482A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
公开(公告)号：US20170133482A1
公开(公告)日：2017-05-11
申请号：US15347157
申请日：2016-11-09
申请人： ROHM CO., LTD.
发明人： Kohei SHINSHO
IPC分类号： H01L29/66 , H01L29/10 , H01L29/34 , H01L21/324 , H01L29/739 , H01L29/36
CPC分类号： H01L29/66333 , H01L21/268 , H01L21/324 , H01L29/1095 , H01L29/32 , H01L29/34 , H01L29/36 , H01L29/66348 , H01L29/7395 , H01L29/7397
摘要： A method of manufacturing a semiconductor device includes: forming a lattice defect layer in a substrate having a front surface region where a bipolar element of a pn junction type is formed and a rear surface region opposing the front surface region, the lattice defect layer being formed by injecting a charged particle to a first region in the rear surface region of the substrate; forming a laminated region, in which a first conductivity type impurity region and a second conductivity type impurity region are sequentially laminated from a rear surface side of the substrate toward the first region, in a second region in the rear surface region of the substrate, the first region being positioned deeper than the second region from a rear surface of the substrate; and selectively activating the laminated region by laser annealing after the formation of the laminated region and the lattice defect layer.

6. 发明申请

US20230122519A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME 有权
公开(公告)号：US20230122519A1
公开(公告)日：2023-04-20
申请号：US17911700
申请日：2021-03-23
申请人： ROHM CO., LTD.
发明人： Toshio NAGATA , Kohei SHINSHO
IPC分类号： C23C14/14 , C23C14/34 , H01L21/285 , H01L29/786
摘要： A semiconductor device includes a chip and an electrode that has a laminated structure including a Ti film, a TiN film, a TiAl alloy film and an Al-based metal film that are laminated in that order from the chip side.

7. 发明申请

US20220384626A1 INSULATED GATE BIPOLAR TRANSISTOR AND DIODE 有权
公开(公告)号：US20220384626A1
公开(公告)日：2022-12-01
申请号：US17886097
申请日：2022-08-11
申请人： ROHM CO., LTD.
发明人： Kohei SHINSHO
IPC分类号： H01L29/739 , H01L29/41 , H01L29/417 , H01L29/08 , H01L23/482 , H01L29/66
摘要： A semiconductor device includes a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof, a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer, an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer, a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region, a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region, a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region and including a continuously laid around line-shaped pattern, and a gate electrode formed at the first principal surface side of the semiconductor layer so as to face the channel region across an insulating film.

8. 发明申请

US20220208759A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220208759A1
公开(公告)日：2022-06-30
申请号：US17693957
申请日：2022-03-14
申请人： ROHM CO., LTD.
发明人： Kohei SHINSHO
IPC分类号： H01L27/07 , H01L29/739 , H01L29/06
摘要： A semiconductor device includes a semiconductor layer of a first conductivity type having a first principal surface on one side and a second principal surface on the other side, the semiconductor layer in which a device formation region and an outer region outside the device formation region are set, a channel region of a second conductivity type formed in a surface layer portion of the first principal surface of the semiconductor layer in the device formation region, an emitter region of a first conductivity type formed in a surface layer portion of the channel region, a gate electrode formed at the first principal surface of the semiconductor layer in the device formation region, the gate electrode facing the channel region across a gate insulating film, a collector region of a second conductivity type formed in a surface layer portion of the second principal surface of the semiconductor layer in the device formation region, an inner cathode region of a first conductivity type formed in the surface layer portion of the second principal surface of the semiconductor layer in the device formation region, and an outer cathode region of a first conductivity type formed in the surface layer portion of the second principal surface of the semiconductor layer in the outer region.

9. 发明申请

US20210202726A1 INSULATED GATE BIPOLAR TRANSISTOR AND DIODE 有权
公开(公告)号：US20210202726A1
公开(公告)日：2021-07-01
申请号：US17200209
申请日：2021-03-12
申请人： ROHM CO., LTD.
发明人： Kohei SHINSHO
IPC分类号： H01L29/739 , H01L29/41 , H01L29/417 , H01L29/08 , H01L23/482 , H01L29/66
摘要： A semiconductor device includes a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof, a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer, an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer, a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region, a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region, a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region and including a continuously laid around line-shaped pattern, and a gate electrode formed at the first principal surface side of the semiconductor layer so as to face the channel region across an insulating film.

10. 发明申请

US20200243673A1 Insulated gate bipolar transistor and diode 审中-公开
公开(公告)号：US20200243673A1
公开(公告)日：2020-07-30
申请号：US16849705
申请日：2020-04-15
申请人： ROHM CO., LTD.
发明人： Kohei SHINSHO
IPC分类号： H01L29/739 , H01L29/08 , H01L29/417 , H01L29/66 , H01L29/41 , H01L23/482 , H01L29/06
摘要： A semiconductor device includes a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof, a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer, an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer, a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region, a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region, a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region and including a continuously laid around line-shaped pattern, and a gate electrode formed at the first principal surface side of the semiconductor layer so as to face the channel region across an insulating film.

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