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1. 发明申请

US20160079443A1 JUNCTION BARRIER SCHOTTKY DIODE 审中-公开
标题翻译： JUNCTION BARRIER肖特基二极管
公开(公告)号：US20160079443A1
公开(公告)日：2016-03-17
申请号：US14526843
申请日：2014-10-29
申请人： RICHTEK TECHNOLOGY CORP
发明人： Chung-Yu Hung , Ching-Yao Yang , Tzu-Cheng Kao , Tsung-Yi Huang , Wu-Te Weng
IPC分类号： H01L29/872 , H01L27/02
CPC分类号： H01L29/872 , H01L27/0248 , H01L29/0619 , H01L29/0646
摘要： A JBS diode includes a silicon substrate, a first P doped region, a metal layer, a second P doped region, and a first N doped region. The silicon substrate includes an upper surface. An NBL is provided in the bottom of the silicon substrate. An N well is provided between the upper surface and the NBL. The first P doped region is arranged in the N well, and extending downward from the upper surface. The metal layer covers the upper surface, and located on a side of the first P doped region. The second P doped region is arranged in the N well, extending downward from the upper surface, and located at the other side of the first P doped region. The first N doped region is arranged in the N well, extending downward from the upper surface, and located at the other side of the first P doped region.
摘要翻译： JBS二极管包括硅衬底，第一P掺杂区，金属层，第二P掺杂区和第一N掺杂区。硅衬底包括上表面。在硅衬底的底部提供NBL。在上表面和NBL之间设有一个N孔。第一P掺杂区域布置在N阱中，并从上表面向下延伸。金属层覆盖上表面，并且位于第一P掺杂区域的一侧。第二P掺杂区域布置在N阱中，从上表面向下延伸，并且位于第一P掺杂区域的另一侧。第一N掺杂区域布置在N阱中，从上表面向下延伸，并且位于第一P掺杂区域的另一侧。

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