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1. 发明申请

US20090294101A1 FAST SUBSTRATE SUPPORT TEMPERATURE CONTROL 有权
标题翻译：快速基板支持温度控制
公开(公告)号：US20090294101A1
公开(公告)日：2009-12-03
申请号：US12132101
申请日：2008-06-03
申请人： RICHARD FOVELL , Paul Brillhart , Sang In Yi , Anisul H. Khan , Jivko Dinev , Shane Nevil
发明人： RICHARD FOVELL , Paul Brillhart , Sang In Yi , Anisul H. Khan , Jivko Dinev , Shane Nevil
IPC分类号： F28D15/00
CPC分类号： F28D15/00 , F28D2021/0077 , H01L21/67109 , H01L21/67248
摘要： Methods and apparatus for controlling the temperature of a substrate support are provided herein. In some embodiments, an apparatus for controlling the temperature of a substrate support may include a first heat transfer loop and a second heat transfer loop. The first heat transfer loop may have a first bath with a first heat transfer fluid at a first temperature. The second heat transfer loop may have a second bath with a second heat transfer fluid at a second temperature. The first and second temperatures may be the same or different. First and second flow controllers may be provided for respectively providing the first and second heat transfer fluids to a substrate support. One or more return lines may couple one or more outlets of the substrate support to the first and second baths for returning the first and second heat transfer fluids to the first and second baths.
摘要翻译：本文提供了用于控制基板支撑件的温度的方法和装置。在一些实施例中，用于控制衬底支撑件的温度的装置可以包括第一传热回路和第二传热回路。第一传热回路可以具有在第一温度下具有第一传热流体的第一浴。第二传热回路可以具有在第二温度下具有第二传热流体的第二浴。第一和第二温度可以相同或不同。可以提供第一和第二流量控制器以分别将第一和第二传热流体提供给基板支撑件。一个或多个返回线可以将衬底支撑件的一个或多个出口连接到第一和第二浴，以将第一和第二传热流体返回到第一和第二浴。

2. 发明授权

US08596336B2 Substrate support temperature control 有权
标题翻译：基板支持温度控制
公开(公告)号：US08596336B2
公开(公告)日：2013-12-03
申请号：US12132101
申请日：2008-06-03
申请人： Richard Fovell , Paul Brillhart , Sang In Yi , Anisul H. Khan , Jivko Dinev , Shane Nevil
发明人： Richard Fovell , Paul Brillhart , Sang In Yi , Anisul H. Khan , Jivko Dinev , Shane Nevil
IPC分类号： F22B37/00 , G05D9/00 , B05C11/00
CPC分类号： F28D15/00 , F28D2021/0077 , H01L21/67109 , H01L21/67248
摘要： Apparatus for controlling the temperature of a substrate support may include a first heat transfer loop and a second heat transfer loop. The first heat transfer loop may have a first bath with a first heat transfer fluid at a first temperature. The second heat transfer loop may have a second bath with a second heat transfer fluid at a second temperature. The first and second temperatures may be the same or different. First and second flow controllers may be provided for respectively providing the first and second heat transfer fluids to a substrate support. One or more return lines may couple one or more outlets of the substrate support to the first and second baths for returning the first and second heat transfer fluids to the first and second baths.
摘要翻译：用于控制衬底支撑件的温度的装置可以包括第一传热回路和第二传热回路。第一传热回路可以具有在第一温度下具有第一传热流体的第一浴。第二传热回路可以具有在第二温度下具有第二传热流体的第二浴。第一和第二温度可以相同或不同。可以提供第一和第二流量控制器以分别将第一和第二传热流体提供给基板支撑件。一个或多个返回线可以将衬底支撑件的一个或多个出口连接到第一和第二浴，以将第一和第二传热流体返回到第一和第二浴。

3. 发明申请

US20130240144A1 FAST RESPONSE FLUID TEMPERATURE CONTROL SYSTEM 审中-公开
标题翻译：快速响应流体温度控制系统
公开(公告)号：US20130240144A1
公开(公告)日：2013-09-19
申请号：US13418574
申请日：2012-03-13
申请人： Douglas A. Buchberger , Shane Nevil , Kartik Ramaswamy , Kenneth Collins , Richard Fovell
发明人： Douglas A. Buchberger , Shane Nevil , Kartik Ramaswamy , Kenneth Collins , Richard Fovell
IPC分类号： F28F27/02 , F28F27/00 , B05C11/00 , F28D15/00
CPC分类号： H01J37/32522 , G05D23/1393 , H01J37/32724
摘要： A plasma processing apparatus and method to control a temperature of a chamber component therein. A process chamber may include a temperature controlled chamber component and at least one remote heat transfer fluid loop comprising a first heat exchanger having a primary side in fluid communication with a heat sink or heat source, and a local heat transfer fluid loop placing the chamber component in fluid communication with a secondary side of the first heat exchanger. The local loop may be of significantly smaller fluid volume than the remote loop(s) and circulated to provide thermal load of uniform temperature. Temperature control of heat transfer fluid in the local loop and temperature control of the chamber component may be implemented with a cascaded control algorithm.
摘要翻译：一种用于控制室内部件的温度的等离子体处理装置和方法。处理室可以包括温度控制室部件和至少一个远程传热流体回路，其包括具有与散热器或热源流体连通的初级侧的第一热交换器和局部传热流体回路，其将腔室部件与第一热交换器的次级侧流体连通。局部回路的流体体积可能远小于远程回路，并循环以提供均匀温度的热负荷。局部回路中传热流体的温度控制和腔室部件的温度控制可以用级联控制算法实现。

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