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1. 发明授权

US10475883B2 Semiconductor device and method of manufacturing thereof 有权
公开(公告)号：US10475883B2
公开(公告)日：2019-11-12
申请号：US15836889
申请日：2017-12-10
申请人： Renesas Electronics Corporation
发明人： Masaru Kadoshima , Masahiko Fujisawa
IPC分类号： H01L27/12 , H01L29/78 , H01L29/66 , H01L29/08 , H01L23/522 , H01L21/762 , H01L21/768 , H01L21/02 , H01L21/84 , H01L29/786 , H01L29/417
摘要： In a semiconductor device, a width of a second epitaxial layer is greater than a width of a first epitaxial layer, and a thickness of an end portion of the second epitaxial layer, which is in contact with an element isolation portion, is smaller than a thickness of an end portion of the first epitaxial layer, which is in contact with the element isolation portion, and a second shortest distance between the element isolation portion and a second plug is greater than a first shortest distance between the element isolation portion and a first plug.

2. 发明授权

US10062773B2 Semiconductor device having a transistor and first and second embedded layers 有权
公开(公告)号：US10062773B2
公开(公告)日：2018-08-28
申请号：US14712894
申请日：2015-05-14
申请人： Renesas Electronics Corporation
发明人： Masaru Kadoshima , Masao Inoue
IPC分类号： H01L29/739 , H01L29/10 , H01L21/8238 , H01L27/092
CPC分类号： H01L29/7397 , H01L21/823892 , H01L27/0922 , H01L29/1095
摘要： The present invention makes it possible, in a manufacturing process of a semiconductor device, to inhibit: impurities from diffusing from a substrate to a semiconductor layer; and the withstand voltage of a transistor from deteriorating.In the present invention, a first electrically conductive type epitaxial layer is formed over a first electrically conductive type base substrate. The impurity concentration of the epitaxial layer is lower than that of the base substrate. A second electrically conductive type first embedded layer and a second electrically conductive type second embedded layer are formed in the epitaxial layer. The second embedded layer is deeper than the first embedded layer, is kept away from the first embedded layer, and has an impurity concentration lower than the first embedded layer. A transistor is further formed in the epitaxial layer.

3. 发明授权

US09685565B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US09685565B2
公开(公告)日：2017-06-20
申请号：US14470719
申请日：2014-08-27
申请人： Renesas Electronics Corporation
发明人： Masaharu Mizutani , Masao Inoue , Hiroshi Umeda , Masaru Kadoshima
IPC分类号： H01L29/792 , H01L29/51 , H01L29/66 , H01L21/28 , H01L21/02 , H01L29/423
CPC分类号： H01L29/792 , H01L21/02148 , H01L21/02178 , H01L21/02318 , H01L21/02359 , H01L21/28229 , H01L21/28282 , H01L29/4234 , H01L29/511 , H01L29/513 , H01L29/517 , H01L29/66833
摘要： The performance of a semiconductor device having a memory element is improved. An insulating film, which is a gate insulating film for a memory element, is formed on a semiconductor substrate, and a gate electrode for the memory element is formed on the insulating film. The insulating film has a first insulating film, a second insulating film thereon, and a third insulating film thereon. The second insulating film is a high-dielectric constant insulator film having a charge accumulating function and contains hafnium, silicon, and oxygen. Each of the first insulating film and the third insulating film has a band gap larger than the band gap of the second insulating film.

4. 发明授权

US11094833B2 Semiconductor device including memory using hafnium and a method of manufacturing the same 有权
公开(公告)号：US11094833B2
公开(公告)日：2021-08-17
申请号：US16452261
申请日：2019-06-25
申请人： RENESAS ELECTRONICS CORPORATION
发明人： Masao Inoue , Masaru Kadoshima , Yoshiyuki Kawashima , Ichiro Yamakawa
IPC分类号： H01L29/792 , H01L29/423 , H01L29/51 , H01L21/28 , H01L21/02 , H01L29/66
摘要： A memory cell, which is a nonvolatile memory cell, includes a gate dielectric film having charge storage layer capable of holding charges, and a memory gate electrode formed on the gate dielectric film. The charge storage layer includes an insulating film containing hafnium, silicon, and oxygen, an insertion layer formed on the insulating film and containing aluminum, and an insulating film formed on the insertion layer and containing hafnium, silicon, and oxygen.

5. 发明授权

US11081596B2 Semiconductor device and manufacturing device of the same 有权
公开(公告)号：US11081596B2
公开(公告)日：2021-08-03
申请号：US15904601
申请日：2018-02-26
申请人： Renesas Electronics Corporation
发明人： Masaru Kadoshima , Masao Inoue
IPC分类号： H01L29/792 , H01L29/423 , H01L21/28 , H01L29/66 , H01L27/11568 , H01L21/02 , H01L29/51
摘要： To improve the performance of a semiconductor device, the semiconductor device includes an insulating film portion over a semiconductor substrate. The insulating film portion includes an insulating film containing silicon and oxygen, a first charge storage film containing silicon and nitrogen, an insulating film containing silicon and oxygen, a second charge storage film containing silicon and nitrogen, and an insulating film containing silicon and oxygen. The first charge storage film is included by two charge storage films.

6. 发明申请

US20180308964A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20180308964A1
公开(公告)日：2018-10-25
申请号：US16019047
申请日：2018-06-26
申请人： Renesas Electronics Corporation
发明人： Masaru Kadoshima , Masao Inoue
IPC分类号： H01L29/739 , H01L27/092 , H01L29/10 , H01L21/8238
CPC分类号： H01L29/7397 , H01L21/823892 , H01L27/0922 , H01L29/1095
摘要： The present invention makes it possible, in a manufacturing process of a semiconductor device, to inhibit: impurities from diffusing from a substrate to a semiconductor layer; and the withstand voltage of a transistor from deteriorating.In the present invention, a first electrically conductive type epitaxial layer is formed over a first electrically conductive type base substrate. The impurity concentration of the epitaxial layer is lower than that of the base substrate. A second electrically conductive type first embedded layer and a second electrically conductive type second embedded layer are formed in the epitaxial layer. The second embedded layer is deeper than the first embedded layer, is kept away from the first embedded layer, and has an impurity concentration lower than the first embedded layer. A transistor is further formed in the epitaxial layer.

7. 发明申请

US20150340479A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20150340479A1
公开(公告)日：2015-11-26
申请号：US14712894
申请日：2015-05-14
申请人： Renesas Electronics Corporation
发明人： Masaru Kadoshima , Masao Inoue
IPC分类号： H01L29/739 , H01L29/10
CPC分类号： H01L29/7397 , H01L21/823892 , H01L27/0922 , H01L29/1095
摘要： The present invention makes it possible, in a manufacturing process of a semiconductor device, to inhibit: impurities from diffusing from a substrate to a semiconductor layer; and the withstand voltage of a transistor from deteriorating.In the present invention, a first electrically conductive type epitaxial layer is formed over a first electrically conductive type base substrate. The impurity concentration of the epitaxial layer is lower than that of the base substrate. A second electrically conductive type first embedded layer and a second electrically conductive type second embedded layer are formed in the epitaxial layer. The second embedded layer is deeper than the first embedded layer, is kept away from the first embedded layer, and has an impurity concentration lower than the first embedded layer. A transistor is further formed in the epitaxial layer.
摘要翻译：本发明在半导体器件的制造工艺中可以抑制：杂质从衬底扩散到半导体层; 并且晶体管的耐压降低。在本发明中，在第一导电型基底上形成第一导电型外延层。外延层的杂质浓度低于基底的杂质浓度。第二导电型第一嵌入层和第二导电型第二嵌入层形成在外延层中。第二嵌入层比第一嵌入层更深，远离第一嵌入层，杂质浓度低于第一嵌入层。晶体管进一步形成在外延层中。

8. 发明申请

US20150060991A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20150060991A1
公开(公告)日：2015-03-05
申请号：US14470719
申请日：2014-08-27
申请人： Renesas Electronics Corporation
发明人： Masaharu Mizutani , Masao Inoue , Hiroshi Umeda , Masaru Kadoshima
IPC分类号： H01L29/792 , H01L21/02 , H01L21/28 , H01L29/51 , H01L29/66
CPC分类号： H01L29/792 , H01L21/02148 , H01L21/02178 , H01L21/02318 , H01L21/02359 , H01L21/28229 , H01L21/28282 , H01L29/4234 , H01L29/511 , H01L29/513 , H01L29/517 , H01L29/66833
摘要： The performance of a semiconductor device having a memory element is improved. An insulating film, which is a gate insulating film for a memory element, is formed on a semiconductor substrate, and a gate electrode for the memory element is formed on the insulating film. The insulating film has a first insulating film, a second insulating film thereon, and a third insulating film thereon. The second insulating film is a high-dielectric constant insulator film having a charge accumulating function and contains hafnium, silicon, and oxygen. Each of the first insulating film and the third insulating film has a band gap larger than the band gap of the second insulating film.
摘要翻译：提高了具有存储元件的半导体器件的性能。作为用于存储元件的栅极绝缘膜的绝缘膜形成在半导体衬底上，并且在绝缘膜上形成用于存储元件的栅电极。绝缘膜具有第一绝缘膜，第二绝缘膜及其上的第三绝缘膜。第二绝缘膜是具有电荷累积功能并含有铪，硅和氧的高介电常数绝缘膜。第一绝缘膜和第三绝缘膜中的每一个具有比第二绝缘膜的带隙大的带隙。

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