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1. 发明授权

US06281135B1 Oxygen free plasma stripping process 有权
标题翻译：无氧等离子体剥离工艺
公开(公告)号：US06281135B1
公开(公告)日：2001-08-28
申请号：US09368553
申请日：1999-08-05
申请人： Qingyuan Han , Ivan Berry , Palani Sakthivel , Ricky Ruffin , Mammoud Dahimene
发明人： Qingyuan Han , Ivan Berry , Palani Sakthivel , Ricky Ruffin , Mammoud Dahimene
IPC分类号： H01L21302
CPC分类号： H01L21/02071 , G03F7/427 , H01J37/32192 , H01J37/32357 , H01J2237/3342 , H01L21/02063 , H01L21/31138 , H01L21/76813 , Y10S438/963
摘要： A method for stripping photoresist and/or removing post etch residues from an exposed low k dielectric layer of a semiconductor wafer in the presence or absence of copper. The method comprises creating an oxygen free plasma by subjecting an oxygen free gas to an energy source to generate the plasma having electrically neutral and charged particles, The charged particles are then selectively removed from the plasma. The electrically neutral particles react with the photoresist and/or post etch residues to form volatile gases which are then removed from the wafer by a gas stream. The oxygen free, plasma gas composition for stripping photoresist and/or post etch residues comprises a hydrogen bearing gas and a fluorine bearing wherein the fluorine bearing gas is less than about 10 percent by volume of the total gas composition.
摘要翻译：在存在或不存在铜时，从半导体晶片的暴露的低k电介质层剥离光刻胶和/或去除后蚀刻残留物的方法。该方法包括通过使无氧气体经受能量源产生具有电中性和带电粒子的等离子体来产生无氧等离子体。然后从等离子体中选择性地除去带电粒子。电中性颗粒与光致抗蚀剂和/或后蚀刻残余物反应以形成挥发性气体，然后通过气流从晶片中除去。用于剥离光致抗蚀剂和/或后蚀刻残余物的无氧等离子体气体组合物包括含氢气体和氟轴承，其中含氟气体小于总气体组成的约10体积％。

2. 发明授权

US06638875B2 Oxygen free plasma stripping process 有权
标题翻译：无氧等离子体剥离工艺
公开(公告)号：US06638875B2
公开(公告)日：2003-10-28
申请号：US09876318
申请日：2001-06-07
申请人： Qingyan Han , Ivan Berry , Palani Sakthivel , Ricky Ruffin , Mahmoud Dahimene
发明人： Qingyan Han , Ivan Berry , Palani Sakthivel , Ricky Ruffin , Mahmoud Dahimene
IPC分类号： H01L21302
CPC分类号： H01L21/02071 , G03F7/427 , H01J37/32192 , H01J37/32357 , H01J2237/3342 , H01L21/02063 , H01L21/31138 , H01L21/76813 , Y10S438/963
摘要： A method for stripping photoresist and/or removing post etch residues from an exposed low k dielectric layer of a semiconductor wafer in the presence or absence of copper. The method comprises creating an oxygen free plasma by subjecting an oxygen free gas to an energy source to generate the plasma having electrically neutral and charged particles. The charged particles are then selectively removed from the plasma. The electrically neutral particles react with the photoresist and/or post etch residues to form volatile gases which are then removed from the wafer by a gas stream. The oxygen free, plasma gas composition for stripping photoresist and/or post etch residues comprises a hydrogen bearing gas and a fluorine bearing wherein the fluorine bearing gas is less than about 10 percent by volume of the total gas composition.
摘要翻译：在存在或不存在铜时，从半导体晶片的暴露的低k电介质层剥离光刻胶和/或去除后蚀刻残留物的方法。该方法包括通过使无氧气体经受能量源产生具有电中性和带电粒子的等离子体来产生无氧等离子体。然后将带电粒子从等离子体中选择性地除去。电中性颗粒与光致抗蚀剂和/或后蚀刻残余物反应以形成挥发性气体，然后通过气流从晶片中除去。用于剥离光致抗蚀剂和/或后蚀刻残余物的无氧等离子体气体组合物包括含氢气体和氟轴承，其中含氟气体小于总气体组成的约10体积％。

3. 发明授权

US06492186B1 Method for detecting an endpoint for an oxygen free plasma process 有权
标题翻译：检测无氧等离子体工艺终点的方法
公开(公告)号：US06492186B1
公开(公告)日：2002-12-10
申请号：US09434617
申请日：1999-11-05
申请人： Qingyan Han , Palani Sakthivel , Ricky Ruffin , Andre Cardoso
发明人： Qingyan Han , Palani Sakthivel , Ricky Ruffin , Andre Cardoso
IPC分类号： H01L2100
CPC分类号： H01J37/32935 , G01N21/68 , G03F7/427 , H01J37/32963 , H01J2237/3342 , H01L21/02071 , H01L21/31138
摘要： A method for determining an endpoint for an oxygen free plasma stripping process for use in semiconductor wafer processing. The method comprises exciting a gas composition containing a nitrogen gas and a reactive gas to form the oxygen free plasma. The oxygen free plasma reacts with a substrate having a photoresist and/or residues thereon to produce emitted light signals corresponding to an oxygen free reaction product. The endpoint is determined by optically measuring a primary emission signal of the oxygen free reaction product at a wavelength of about 387 nm. The endpoint is determined when the plasma no longer reacts with the photoresist and/or residues on the substrate to produce the emitted light at about 387 nm, an indication that the photoresist and/or residues have been removed from the wafer. Secondary emission signals of the oxygen free reaction product at about 358 nm and 431 nm can also be monitored for determining the endpoint.
摘要翻译：一种用于确定用于半导体晶片处理中的无氧等离子体剥离工艺的端点的方法。该方法包括激发含有氮气和反应气体的气体组合物以形成无氧等离子体。无氧等离子体与其上具有光致抗蚀剂和/或残留物的基底反应以产生对应于无氧反应产物的发射光信号。通过在约387nm的波长下光学测量无氧反应产物的主要发射信号来确定终点。当等离子体不再与基板上的光致抗蚀剂和/或残余物反应以在约387nm处产生发射的光，这表明光致抗蚀剂和/或残余物已经从晶片去除时，确定端点。在358nm和431nm处的无氧反应产物的二次发射信号也可以被监测以确定终点。

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