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1. 发明授权

US07687810B2 Robust LED structure for substrate lift-off 有权
标题翻译：坚固的LED结构，用于衬底剥离
公开(公告)号：US07687810B2
公开(公告)日：2010-03-30
申请号：US11876404
申请日：2007-10-22
申请人： Qingwei Mo , Arnold Daguio
发明人： Qingwei Mo , Arnold Daguio
IPC分类号： H01L27/15 , H01L29/40 , H01L23/29
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/505 , H01L33/58 , H01L33/62 , H01L2224/13 , H01L2224/73204 , H01L2933/0041
摘要： An etching step is performed on an LED/substrate wafer to etch through the LED epitaxial layers entirely around each LED on the substrate wafer to form a gap between each LED on the wafer. The substrate is not etched. When the LEDs/substrates are singulated, edges of each substrate extend beyond edges of the LED die. The LEDs are flip-chips and are mounted on a submount with the LED die between the submount and the substrate. An insulating underfill material is injected under the LED die and also covers the sides of the LED die and “enlarged” substrate. The substrate is then removed by laser lift-off. The raised walls of the underfill that were along the edges of the enlarged substrate are laterally spaced from the edges of the LED die so that a phosphor plate can be easily positioned on top to the LED die with a relaxed positioning tolerance.
摘要翻译：在LED /衬底晶片上执行蚀刻步骤，以在衬底晶片上的每个LED上整个围绕LED外延层蚀刻，以在晶片上的每个LED之间形成间隙。衬底不被蚀刻。当LED /衬底被分割时，每个衬底的边缘延伸超过LED管芯的边缘。 LED是倒装芯片，并且安装在基座上，LED管芯位于基座和基板之间。在LED管芯下方注入绝缘底层填充材料，并且还覆盖LED管芯的侧面和“扩大的”基板。然后通过激光剥离去除衬底。沿着放大的基板的边缘的底部填充物的隆起的壁与LED模具的边缘横向间隔开，使得荧光体板可以容易地放置在LED模具的顶部，具有放松的定位公差。

2. 发明申请

US20090101929A1 ROBUST LED STRUCTURE FOR SUBSTRATE LIFT-OFF 有权
标题翻译：用于底板提升的坚固的LED结构
公开(公告)号：US20090101929A1
公开(公告)日：2009-04-23
申请号：US11876404
申请日：2007-10-22
申请人： Qingwei Mo , Arnold Daguio
发明人： Qingwei Mo , Arnold Daguio
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/505 , H01L33/58 , H01L33/62 , H01L2224/13 , H01L2224/73204 , H01L2933/0041
摘要： An etching step is performed on an LED/substrate wafer to etch through the LED epitaxial layers entirely around each LED on the substrate wafer to form a gap between each LED on the wafer. The substrate is not etched. When the LEDs/substrates are singulated, edges of each substrate extend beyond edges of the LED die. The LEDs are flip-chips and are mounted on a submount with the LED die between the submount and the substrate. An insulating underfill material is injected under the LED die and also covers the sides of the LED die and “enlarged” substrate. The substrate is then removed by laser lift-off. The raised walls of the underfill that were along the edges of the enlarged substrate are laterally spaced from the edges of the LED die so that a phosphor plate can be easily positioned on top to the LED die with a relaxed positioning tolerance.
摘要翻译：在LED /衬底晶片上执行蚀刻步骤，以在衬底晶片上的每个LED上整个围绕LED外延层蚀刻，以在晶片上的每个LED之间形成间隙。衬底不被蚀刻。当LED /衬底被分割时，每个衬底的边缘延伸超过LED管芯的边缘。 LED是倒装芯片，并且安装在基座上，LED管芯位于基座和基板之间。在LED管芯下方注入绝缘底层填充材料，并且还覆盖LED管芯的侧面和“扩大的”基板。然后通过激光剥离去除衬底。沿着放大的基板的边缘的底部填充物的隆起的壁与LED模具的边缘横向间隔开，使得荧光体板可以容易地放置在LED模具的顶部，具有放松的定位公差。

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