专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08362571B1 High compressive stress carbon liners for MOS devices 失效
标题翻译：用于MOS器件的高压应力碳衬垫
公开(公告)号：US08362571B1
公开(公告)日：2013-01-29
申请号：US13016660
申请日：2011-01-28
申请人： Qingguo Wu , James S. Sims , Mandyam Sriram , Seshasayee Varadarajan , Haiying Fu , Pramod Subramonium , Jon Henri , Sirish Reddy
发明人： Qingguo Wu , James S. Sims , Mandyam Sriram , Seshasayee Varadarajan , Haiying Fu , Pramod Subramonium , Jon Henri , Sirish Reddy
IPC分类号： H01L21/02
CPC分类号： H01L21/02115 , H01L21/02274 , H01L21/823807 , H01L21/823814 , H01L29/665 , H01L29/7843 , H01L29/7848
摘要： Transistor architectures and fabrication processes generate channel strain without adversely impacting the efficiency of the transistor fabrication process while preserving the material quality and enhancing the performance of the resulting transistor. Transistor strain is generated is PMOS devices using a highly compressive post-salicide amorphous carbon capping layer applied as a blanket over on at least the source and drain regions. The stress from this capping layer is uniaxially transferred to the PMOS channel through the source-drain regions to create compressive strain in PMOS channel.
摘要翻译：晶体管架构和制造工艺产生通道应变，而不会不利地影响晶体管制造工艺的效率，同时保持材料质量并增强所得晶体管的性能。产生晶体管应变是使用在至少源极和漏极区上作为覆盖层施加的高度压缩的后自适应硅化物非晶碳覆盖层的PMOS器件。来自该覆盖层的应力通过源极 - 漏极区域单轴转移到PMOS沟道，以在PMOS沟道中产生压缩应变。

2. 发明授权

US07906817B1 High compressive stress carbon liners for MOS devices 有权
标题翻译：用于MOS器件的高压应力碳衬垫
公开(公告)号：US07906817B1
公开(公告)日：2011-03-15
申请号：US12134969
申请日：2008-06-06
申请人： Qingguo Wu , James S. Sims , Mandyam Sriram , Seshasayee Varadarajan , Haiying Fu , Pramod Subramonium , Jon Henri , Sirish Reddy
发明人： Qingguo Wu , James S. Sims , Mandyam Sriram , Seshasayee Varadarajan , Haiying Fu , Pramod Subramonium , Jon Henri , Sirish Reddy
IPC分类号： H01L29/76
CPC分类号： H01L21/02115 , H01L21/02274 , H01L21/823807 , H01L21/823814 , H01L29/665 , H01L29/7843 , H01L29/7848
摘要： Transistor architectures and fabrication processes generate channel strain without adversely impacting the efficiency of the transistor fabrication process while preserving the material quality and enhancing the performance of the resulting transistor. Transistor strain is generated is PMOS devices using a highly compressive post-salicide amorphous carbon capping layer applied as a blanket over on at least the source and drain regions. The stress from this capping layer is uniaxially transferred to the PMOS channel through the source-drain regions to create compressive strain in PMOS channel.
摘要翻译：晶体管架构和制造工艺产生通道应变，而不会不利地影响晶体管制造工艺的效率，同时保持材料质量并增强所得晶体管的性能。产生晶体管应变是使用在至少源极和漏极区上作为覆盖层施加的高度压缩的后自适应硅化物非晶碳覆盖层的PMOS器件。来自该覆盖层的应力通过源极 - 漏极区域单轴转移到PMOS沟道，以在PMOS沟道中产生压缩应变。

3. 发明授权

US08637411B2 Plasma activated conformal dielectric film deposition 有权
标题翻译：等离子体激活的保形电介质膜沉积
公开(公告)号：US08637411B2
公开(公告)日：2014-01-28
申请号：US13242084
申请日：2011-09-23
申请人： Shankar Swaminathan , Jon Henri , Dennis M. Hausmann , Pramod Subramonium , Mandyam Sriram , Vishwanathan Rangarajan , Kirthi K. Kattige , Bart J. van Schravendijk , Andrew J. McKerrow
发明人： Shankar Swaminathan , Jon Henri , Dennis M. Hausmann , Pramod Subramonium , Mandyam Sriram , Vishwanathan Rangarajan , Kirthi K. Kattige , Bart J. van Schravendijk , Andrew J. McKerrow
IPC分类号： H01L21/469 , H01L21/31 , H01L21/311
CPC分类号： H01L21/02123 , C23C16/045 , C23C16/345 , C23C16/401 , C23C16/402 , C23C16/4408 , C23C16/45523 , C23C16/45525 , C23C16/4554 , C23C16/45544 , C23C16/52 , C23C16/56 , H01J37/32412 , H01J2237/3321 , H01J2237/3365 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/0234 , H01L21/02348 , H01L21/67017 , H01L21/76831 , H01L21/76898
摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.
摘要翻译：在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。在一个方面，该方法的特征在于在吸附和反应循环之间将杂质物质间歇地递送到膜。

4. 发明申请

US20120028454A1 PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION 有权
公开(公告)号：US20120028454A1
公开(公告)日：2012-02-02
申请号：US13242084
申请日：2011-09-23
申请人： Shankar Swaminathan , Jon Henri , Dennis M. Hausmann , Pramod Subramonium , Mandyam Sriram , Vishwanathan Rangarajan , Kirthi K. Kattige , Bart J. van Schravendijk , Andrew J. McKerrow
发明人： Shankar Swaminathan , Jon Henri , Dennis M. Hausmann , Pramod Subramonium , Mandyam Sriram , Vishwanathan Rangarajan , Kirthi K. Kattige , Bart J. van Schravendijk , Andrew J. McKerrow
IPC分类号： H01L21/225 , C23C16/52 , C23C16/50 , C23C16/455 , C23C16/458
CPC分类号： H01L21/02123 , C23C16/045 , C23C16/345 , C23C16/401 , C23C16/402 , C23C16/4408 , C23C16/45523 , C23C16/45525 , C23C16/4554 , C23C16/45544 , C23C16/52 , C23C16/56 , H01J37/32412 , H01J2237/3321 , H01J2237/3365 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/0234 , H01L21/02348 , H01L21/67017 , H01L21/76831 , H01L21/76898
摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

5. 发明申请

US20120258261A1 INCREASING ETCH SELECTIVITY OF CARBON FILMS WITH LOWER ABSORPTION CO-EFFICIENT AND STRESS 审中-公开
标题翻译：提高碳吸收能力的选择性较低吸收效率和应力
公开(公告)号：US20120258261A1
公开(公告)日：2012-10-11
申请号：US13443668
申请日：2012-04-10
申请人： Sirish Reddy , Alice Hollister , Pramod Subramonium , Jon Henri , Chunhai Ji , Zhi Yuan Fang
发明人： Sirish Reddy , Alice Hollister , Pramod Subramonium , Jon Henri , Chunhai Ji , Zhi Yuan Fang
IPC分类号： B29B13/08
CPC分类号： H01L21/0332 , C23C16/26 , C23C16/56 , H01L21/02115 , H01L21/02274 , H01L21/31122 , H01L21/31144
摘要： A method for depositing a film includes arranging a substrate in a plasma enhanced chemical vapor deposition chamber. A first ashable hardmask (AHM) layer that is carbon-based is deposited on the substrate. During the depositing of the first AHM layer, doping is performed with at least one dopant selected from a group consisting of silicon, silane, boron, nitrogen, germanium, carbon, ammonia, and carbon dioxide. An atomic percentage of the at least one dopant is greater than or equal to 5% of the first AHM layer.
摘要翻译：一种用于沉积膜的方法包括在等离子体增强化学气相沉积室中布置基板。基于碳基的第一可灰化硬掩模（AHM）层被沉积在基底上。在沉积第一AHM层期间，用至少一种选自硅，硅烷，硼，氮，锗，碳，氨和二氧化碳的掺杂剂进行掺杂。至少一种掺杂剂的原子百分比大于或等于第一AHM层的5％。

6. 发明授权

US08591659B1 Plasma clean method for deposition chamber 有权
标题翻译：用于沉积室的等离子体清洁方法
公开(公告)号：US08591659B1
公开(公告)日：2013-11-26
申请号：US12355601
申请日：2009-01-16
申请人： Zhiyuan Fang , Pramod Subramonium , Jon Henri , Keith Fox
发明人： Zhiyuan Fang , Pramod Subramonium , Jon Henri , Keith Fox
IPC分类号： B08B9/08
CPC分类号： B08B7/0035 , B08B9/00 , C23C16/4405 , H01J37/32357 , H01J37/32862
摘要： Improved methods and apparatuses for removing residue from the interior surfaces of the deposition reactor are provided. The methods involve increasing availability of cleaning reagent radicals inside the deposition chamber by generating cleaning reagent radicals in a remote plasma generator and then further delivering in-situ plasma energy while the cleaning reagent mixture is introduced into the deposition chamber. Certain embodiments involve a multi-stage process including a stage in which the cleaning reagent mixture is introduced at a high pressure (e.g., about 0.6 Torr or more) and a stage the cleaning reagent mixture is introduced at a low pressure (e.g., about 0.6 Torr or less).
摘要翻译：提供了用于从沉积反应器的内表面除去残留物的改进的方法和装置。这些方法涉及通过在远程等离子体发生器中产生清洁试剂自由基，然后在将清洁试剂混合物引入沉积室的同时进一步输送原位等离子体能量来增加沉积室内清洗剂自由基的可用性。某些实施方案涉及多级方法，其包括其中以高压（例如，约0.6托或更高）引入清洗剂混合物的阶段，以及在低压（例如约0.6）下引入清洗试剂混合物的阶段乇以下）。

7. 发明授权

US07915166B1 Diffusion barrier and etch stop films 有权
标题翻译：扩散阻挡层和蚀刻停止膜
公开(公告)号：US07915166B1
公开(公告)日：2011-03-29
申请号：US11710652
申请日：2007-02-22
申请人： Yongsik Yu , Pramod Subramonium , Zhiyuan Fang , Jon Henri , Elizabeth Apen , Dan Vitkavage
发明人： Yongsik Yu , Pramod Subramonium , Zhiyuan Fang , Jon Henri , Elizabeth Apen , Dan Vitkavage
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/3212 , H01L21/02115 , H01L21/02167 , H01L21/02211 , H01L21/02274 , H01L21/311 , H01L21/76807 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/76846 , H01L21/76849 , H01L21/76855 , H01L21/76867
摘要： Films having high hermeticity and a low dielectric constant can be used as copper diffusion barrier films, etch stop films, CMP stop films and other hardmasks during IC fabrication. Hermetic films can protect the underlying layers, such as layers of metal and dielectric, from exposure to atmospheric moisture and oxygen, thereby preventing undesirable oxidation of metal surfaces and absorption of moisture by a dielectric. Specifically, a bi-layer film having a hermetic bottom layer composed of hydrogen doped carbon and a low dielectric constant (low-k) top layer composed of low-k silicon carbide (e.g., high carbon content hydrogen doped silicon carbide) can be employed. Such bi-layer film can be deposited by PECVD methods on a partially fabricated semiconductor substrate having exposed layers of dielectric and metal.
摘要翻译：在IC制造过程中，可以使用具有高气密性和低介电常数的膜作为铜扩散阻挡膜，蚀刻停止膜，CMP阻挡膜和其它硬掩模。密封膜可以保护下面的层，例如金属和电介质层，暴露于大气中的水分和氧气，从而防止金属表面的不期望的氧化和电介质吸收水分。具体而言，可以使用具有由氢掺杂碳组成的气密底层和由低k碳化硅构成的低介电常数（低k）顶层的双层膜（例如，高碳含量氢掺杂碳化硅）。这种双层膜可以通过PECVD方法沉积在具有暴露的介电层和金属层的部分制造的半导体衬底上。

8. 发明授权

US07981810B1 Methods of depositing highly selective transparent ashable hardmask films 有权
标题翻译：沉积高选择性透明可腻硬掩模薄膜的方法
公开(公告)号：US07981810B1
公开(公告)日：2011-07-19
申请号：US11449983
申请日：2006-06-08
申请人： Pramod Subramonium , Zhiyuan Fang , Jon Henri
发明人： Pramod Subramonium , Zhiyuan Fang , Jon Henri
IPC分类号： H01L21/31
CPC分类号： H01L21/3146 , C23C16/26 , H01L21/02115 , H01L21/02274 , H01L21/31144
摘要： The present invention addresses this need by providing a method for forming transparent PECVD deposited ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers. Methods of the invention involve depositing the AHM using dilute hydrocarbon precursor gas flows and/or low process temperatures. The AHMs produced are transparent (having absorption coefficients of less than 0.1 in certain embodiments). The AHMs also have the property of high selectivity of the hard mask film to the underlying layers for successful integration of the film, and are suitable for use with 193 nm generation and below lithography schemes wherein high selectivity of the hard mask to the underlying layers is required. The lower temperature process also allows reduction of the overall thermal budget for a wafer.
摘要翻译：本发明通过提供一种用于形成对下层具有高等离子体蚀刻选择性的透明PECVD沉积可吸入硬掩模（AHM）的方法来满足这一需要。本发明的方法包括使用稀烃前体气流和/或低工艺温度沉积AHM。所生产的AHM是透明的（在某些实施方案中吸收系数小于0.1）。 AHM还具有硬掩模膜对下层的高选择性，成功地将薄膜整合的性质，并且适用于193nm生成和低于光刻方案的应用，其中硬掩模对下层的高选择性为需要。较低的温度过程还可以降低晶片的整体热预算。

9. 发明授权

US07981777B1 Methods of depositing stable and hermetic ashable hardmask films 有权
标题翻译：沉积稳定和密封的可硬化硬掩膜的方法
公开(公告)号：US07981777B1
公开(公告)日：2011-07-19
申请号：US11710377
申请日：2007-02-22
申请人： Pramod Subramonium , Yongsik Yu , Zhiyuan Fang , Jon Henri
发明人： Pramod Subramonium , Yongsik Yu , Zhiyuan Fang , Jon Henri
IPC分类号： H01L21/00
CPC分类号： H01L21/0332 , C23C16/26 , C23C16/509 , H01L21/02115 , H01L21/02274 , H01L21/3146
摘要： The present invention provides PECVD methods for forming stable and hermetic ashable hard masks (AHMs). The methods involve depositing AHMs using dilute hydrocarbon precursor gas flows and/or high LFRF/HFRF ratios. In certain embodiments, the AHMs are transparent and have high etch selectivities. Single and dual layer hermetic AHM stacks are also provided. According to various embodiments, the dual layer stack includes an underlying AHM layer having tunable optical properties and a hermetic cap layer.
摘要翻译：本发明提供了用于形成稳定和密封的可嚼硬掩模（AHM）的PECVD方法。这些方法涉及使用稀烃前体气体流和/或高LFRF / HFRF比来沉积AHM。在某些实施方案中，AHM是透明的并且具有高蚀刻选择性。还提供单层和双层密封AHM堆叠。根据各种实施例，双层堆叠包括具有可调光学特性的底层AHM层和密封盖层。

10. 发明授权

US06821407B1 Anode and anode chamber for copper electroplating 有权
标题翻译：用于铜电镀的阳极和阳极室
公开(公告)号：US06821407B1
公开(公告)日：2004-11-23
申请号：US10231147
申请日：2002-08-27
申请人： Jonathan D. Reid , Timothy Mark Archer , Thomas Tan Vu , Seshasayee Varadarajan , Jon Henri , Steven T. Mayer , David Sauer , Anita Kang , Gerald Feldewerth
发明人： Jonathan D. Reid , Timothy Mark Archer , Thomas Tan Vu , Seshasayee Varadarajan , Jon Henri , Steven T. Mayer , David Sauer , Anita Kang , Gerald Feldewerth
IPC分类号： C25D338
CPC分类号： C25D21/12 , C25D17/002 , C25D17/12 , C25F7/00 , H05K3/241
摘要： An electroplating system includes (a) a phosphorized anode having an average grain size of at least about 50 micrometers and (b) plating apparatus that separates the anode from the cathode and prevents most particles generated at the anode from passing to the cathode. The separation may be accomplished by interposing a microporous chemical transport barrier between the anode and cathode. The relatively few particles that are generated at the large grain phosphorized copper anode are prevented from passing into the cathode (wafer) chamber area and thereby causing a defect in the part.
摘要翻译：电镀系统包括（a）平均晶粒尺寸为至少约50微米的磷化阳极和（b）将阳极与阴极分离的电镀装置，并防止在阳极处产生的大多数颗粒通过阴极。分离可以通过在阳极和阴极之间插入微孔化学传输阻挡层来实现。在大晶粒磷化铜阳极处产生的相对较少的颗粒被阻止进入阴极（晶片）室区域，从而导致该部分的缺陷。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式