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1. 发明授权

US09640396B2 Spin-on spacer materials for double- and triple-patterning lithography 有权
公开(公告)号：US09640396B2
公开(公告)日：2017-05-02
申请号：US12652464
申请日：2010-01-05
申请人： Qin Lin , Rama Puligadda , James Claypool , Douglas J. Guerrero , Brian Smith
发明人： Qin Lin , Rama Puligadda , James Claypool , Douglas J. Guerrero , Brian Smith
IPC分类号： H01L21/308 , B31D3/00 , H01L21/311 , H01L21/033 , C08G77/20 , G03F7/40 , H01L21/312
CPC分类号： H01L21/0337 , C08G77/20 , G03F7/40 , H01L21/0338 , H01L21/3121
摘要： Novel double- and triple-patterning methods are provided. The methods involve applying a shrinkable composition to a patterned template structure (e.g., a structure having lines) and heating the composition. The shrinkable composition is selected to possess properties that will cause it to shrink during heating, thus forming a conformal layer over the patterned template structure. The layer is then etched to leave behind pre-spacer structures, which comprise the features from the pattern with remnants of the shrinkable composition adjacent the feature sidewalls. The features are removed, leaving behind a doubled pattern. In an alternative embodiment, an extra etch step can be carried out prior to formation of the features on the template structure, thus allowing the pattern to be tripled rather than doubled.

2. 发明申请

US20100170868A1 SPIN-ON SPACER MATERIALS FOR DOUBLE- AND TRIPLE-PATTERNING LITHOGRAPHY 有权
标题翻译：用于双重和三维图案的旋转间隔材料
公开(公告)号：US20100170868A1
公开(公告)日：2010-07-08
申请号：US12652464
申请日：2010-01-05
申请人： Qin Lin , Rama Puligadda , James Claypool , Douglas J. Guerrero , Brian Smith
发明人： Qin Lin , Rama Puligadda , James Claypool , Douglas J. Guerrero , Brian Smith
IPC分类号： H05K3/00
CPC分类号： H01L21/0337 , C08G77/20 , G03F7/40 , H01L21/0338 , H01L21/3121
摘要： Novel double- and triple-patterning methods are provided. The methods involve applying a shrinkable composition to a patterned template structure (e.g., a structure having lines) and heating the composition. The shrinkable composition is selected to possess properties that will cause it to shrink during heating, thus forming a conformal layer over the patterned template structure. The layer is then etched to leave behind pre-spacer structures, which comprise the features from the pattern with remnants of the shrinkable composition adjacent the feature sidewalls. The features are removed, leaving behind a doubled pattern. In an alternative embodiment, an extra etch step can be carried out prior to formation of the features on the template structure, thus allowing the pattern to be tripled rather than doubled.
摘要翻译：提供了新的双重和三重图案化方法。所述方法包括将可收缩的组合物应用于图案化的模板结构（例如，具有线的结构）并加热组合物。可收缩组合物被选择为具有使其在加热期间收缩的性质，从而在图案化模板结构上形成共形层。然后蚀刻该层以留下预间隔结构，其包含来自图案的特征，其中可收缩组合物的残余物邻近特征侧壁。功能被删除，留下了一倍的模式。在替代实施例中，可以在模板结构上形成特征之前执行额外蚀刻步骤，从而允许图案增加三倍而不是加倍。

3. 发明申请

US20130288058A1 DEVELOPMENT OF HIGH-VISCOSITY BONDING LAYER THROUGH IN-SITU POLYMER CHAIN EXTENSION 有权
标题翻译：通过现场聚合物链扩展开发高粘度粘结层
公开(公告)号：US20130288058A1
公开(公告)日：2013-10-31
申请号：US13460372
申请日：2012-04-30
申请人： Wenbin Hong , Tony D. Flaim , Rama Puligadda , Susan Bailey
发明人： Wenbin Hong , Tony D. Flaim , Rama Puligadda , Susan Bailey
IPC分类号： B32B37/00 , B32B7/12 , B32B38/10 , B32B37/12 , B32B38/00
CPC分类号： C08G73/0233 , B32B15/08 , C08G18/3215 , C08G18/4837 , C08G18/4841 , C08G18/7621 , C08G18/7671 , C08G69/44 , C08G2170/40 , C09J4/00 , C09J5/00 , C09J133/00 , C09J175/02 , C09J175/08 , C09J177/12 , C09J2203/326 , C09J2205/302 , H01L21/2007 , H01L21/6835 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2221/68386 , Y10T156/10 , Y10T428/31515 , Y10T428/31551 , Y10T428/31725 , Y10T428/31786 , C08G18/10 , C08G18/48
摘要： New compositions and methods of using those compositions as bonding compositions for temporary wafer bonding are provided. The compositions are used to temporarily bond an active wafer to a carrier wafer or substrate in microelectronic fabrication using an in situ polymerization reaction of the components of the bonding composition to yield the bonding layer. The compositions form polymerized bonding layers that are mechanically strong and thermally resistant, but allow the wafers to be separated at the appropriate stage in the fabrication process. The bonding layer also retains its solubility so that residue can be cleaned from the debonded wafers using simple wet methods rather than etching or other harsh treatments.
摘要翻译：提供了使用这些组合物作为临时晶片接合的粘合组合物的新组合物和方法。组合物用于在微电子制造中使用粘合组合物的组分的原位聚合反应将活性晶片临时粘合到载体晶片或基底上，以产生粘合层。组合物形成机械强度和耐热性，但允许晶片在制造过程中的适当阶段分离的聚合粘合层。粘合层还保留其溶解度，使得可以使用简单的湿法而不是蚀刻或其它苛刻的处理从脱粘的晶片清洗残留物。

4. 发明申请

US20120291938A1 CYCLIC OLEFIN COMPOSITIONS FOR TEMPORARY WAFER BONDING 有权
标题翻译：用于临时波形粘结的循环烯烃组合物
公开(公告)号：US20120291938A1
公开(公告)日：2012-11-22
申请号：US13548674
申请日：2012-07-13
申请人： Wenbin Hong , Dongshun Bai , Tony D. Flaim , Rama Puligadda
发明人： Wenbin Hong , Dongshun Bai , Tony D. Flaim , Rama Puligadda
IPC分类号： B29C65/52
CPC分类号： H01L21/187 , C08G2261/332 , C08G2261/418 , C08L65/00 , C09J123/0823 , H01L21/6835 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , Y10T156/10 , Y10T156/1153 , Y10T428/24355 , Y10T428/24802
摘要： New compositions and methods of using those compositions as bonding compositions are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to bond an active wafer to a carrier wafer or substrate to assist in protecting the active wafer and its active sites during subsequent processing and handling. The compositions form bonding layers that are chemically and thermally resistant, but that can also be softened or dissolved to allow the wafers to slide or be pulled apart at the appropriate stage in the fabrication process.
摘要翻译：提供了使用这些组合物作为粘合组合物的新组合物和方法。组合物包含分散或溶解在溶剂体系中的环烯烃共聚物，并且可用于将活性晶片结合到载体晶片或基底，以在随后的处理和处理期间有助于保护活性晶片及其活性位点。组合物形成化学和耐热的粘合层，但是也可以软化或溶解以允许晶片在制造过程中的适当阶段滑动或拉开。

5. 发明授权

US06893684B2 Anti-reflective coating compositions for use with low k dielectric materials 有权
标题翻译：用于低k电介质材料的抗反射涂料组合物
公开(公告)号：US06893684B2
公开(公告)日：2005-05-17
申请号：US10310099
申请日：2002-12-03
申请人： Rama Puligadda , James E. Lamb, III , Tony D. Flaim
发明人： Rama Puligadda , James E. Lamb, III , Tony D. Flaim
IPC分类号： H01L21/312 , B05D3/02 , B32B17/10 , C08F20/26 , C08F20/32 , C08F220/28 , C08G59/32 , C08J7/04 , C09D163/00 , G03F7/09 , G03F7/11 , H01L20060101 , H01L21/027 , H01L21/311 , C08G59/14 , C08G59/16
CPC分类号： G03F7/091 , C08F220/28 , C08G59/3218 , C08J7/047 , C08J2425/00 , C08J2433/00 , C08J2471/00 , C09D163/00 , H01L21/0276 , H01L21/31144 , C08L2666/16
摘要： Anti-reflective compositions and methods of using those compositions with low dielectric constant materials are provided. In one embodiment, the compositions include polymers comprising recurring monomers having unreacted ring members. In another embodiment, the polymers further comprise recurring monomers comprising ring members reacted with a light attenuating compound so as to open the ring. The compositions can be applied to dielectric layers so as to minimize or prevent reflection during the dual damascene process while simultaneously blocking via or photoresist poisoning which commonly occurs when organic anti-reflective coatings are applied to low dielectric constant layers.
摘要翻译：提供抗反射组合物和使用具有低介电常数材料的那些组合物的方法。在一个实施方案中，组合物包括包含具有未反应的环成员的重复单体的聚合物。在另一个实施方案中，聚合物还包含包含与光衰减化合物反应以便打开环的环成员的重复单体。组合物可以施加到电介质层，以便在双镶嵌工艺期间最小化或防止反射，同时阻挡当将有机抗反射涂层施加到低介电常数层时通常发生的通孔或光致抗蚀剂中毒。

6. 发明授权

US07132216B2 Non-aromatic chromophores for use in polymer anti-reflective coatings 有权
公开(公告)号：US07132216B2
公开(公告)日：2006-11-07
申请号：US10689482
申请日：2003-10-20
申请人： Xie Shao , Robert Cox , Shreeram V. Deshpande , Tony D. Flaim , Rama Puligadda
发明人： Xie Shao , Robert Cox , Shreeram V. Deshpande , Tony D. Flaim , Rama Puligadda
IPC分类号： G03C1/825 , G03C1/83 , G03C1/815 , G03C1/73
CPC分类号： G03F7/091 , Y10S430/106 , Y10S430/108
摘要： An improved light attenuating compound for use in the production of microdevices is provided. Broadly, the light attenuating compound is non-aromatic and can be directly incorporated (either physically or chemically) into photolithographic compositions such as bottom anti-reflective coatings (BARC) and contact or via hole fill materials. The preferred non-aromatic compounds of the invention are conjugated aliphatic and alicyclic compounds which greatly enhance the plasma etch rate of the composition. Furthermore, the light attenuating compounds are useful for absorbing light at shorter wavelengths. In one embodiment, the inventive compounds can be polymerized so as to serve as both the polymer binder of the composition as well as the light absorbing constituent.

7. 发明申请

US20050148170A1 Developer-soluble materials and methods of using the same in via-first dual damascene applications 有权
标题翻译：显影剂可溶性材料及其在通孔 - 第一双镶嵌应用中的使用方法
公开(公告)号：US20050148170A1
公开(公告)日：2005-07-07
申请号：US10966909
申请日：2004-10-15
申请人： Mandar Bhave , Carlton Washburn , Rama Puligadda , Kevin Edwards
发明人： Mandar Bhave , Carlton Washburn , Rama Puligadda , Kevin Edwards
IPC分类号： H01L20060101 , H01L21/4763
CPC分类号： H01L21/02118 , G03F7/091 , H01L21/312 , H01L21/76808
摘要： Wet-recess (develop) gap-fill and bottom anti-reflective coatings based on a polyamic acid or polyester platform are provided. The polyamic acid platform allows imidization to form a polyimide when supplied with thermal energy. The gap-fill and bottom anti-reflective coatings are soluble in standard aqueous developers, and are useful for patterning via holes and trenches on semiconductor substrates in a dual damascene patterning scheme. In one embodiment, compositions composed of polyamic acids can be used as gap-filling (via-filling) materials having no anti-reflective function in a copper dual damascene process to improve iso-dense fill bias across different via arrays. In another embodiment, the same composition can be used for anti-reflective purposes, wherein the photoresist can be directly coated over the recessed surface, while it also acts as a fill material to planarize via holes on the substrate. The compositions described here are particularly suitable for use at exposure wavelengths of less than about 370 nm.
摘要翻译：提供了基于聚酰胺酸或聚酯平台的湿式凹陷（开发）间隙填充和底部抗反射涂层。当提供热能时，聚酰胺酸平台允许酰亚胺化形成聚酰亚胺。间隙填充和底部抗反射涂层可溶于标准含水显影剂，并且可用于在双镶嵌图案化方案中图案化半导体衬底上的通孔和沟槽。在一个实施方案中，由聚酰胺酸组成的组合物可用作在铜双镶嵌工艺中不具有抗反射功能的间隙填充（通孔填充）材料，以改善穿过不同通孔阵列的等密度填充偏压。在另一个实施方案中，相同的组合物可以用于抗反射目的，其中光致抗蚀剂可以直接涂覆在凹陷表面上，同时它也用作平坦化基底上的通孔的填充材料。这里描述的组合物特别适用于小于约370nm的曝光波长。

8. 发明授权

US06524708B2 Anti-reflective coating compositions comprising polymerized aminoplasts 有权
公开(公告)号：US06524708B2
公开(公告)日：2003-02-25
申请号：US09975837
申请日：2001-10-10
申请人： Rama Puligadda , Runhui Huang
发明人： Rama Puligadda , Runhui Huang
IPC分类号： B32B904
CPC分类号： G02B1/111 , C08L61/28 , Y10T428/31504 , Y10T428/31667 , Y10T428/31862 , Y10T428/31942
摘要： Improved anti-reflective coating compositions for use in integrated circuit manufacturing processes and methods of forming these compositions are provided. Broadly, the compositions are formed by heating a solution comprising a compound including specific compounds (e.g., alkoxy alkyl melamines, alkoxy alkyl benzoguanamines) under acidic conditions so as to polymerize the compounds and form polymers having an average molecular weight of at least about 1,000 Daltons. The monomers of the resulting polymers are joined to one another via linkage groups (e.g., —CH2—, —CH2—O—CH2—) which are bonded to nitrogen atoms on the respective monomers. The polymerized compound is mixed with a solvent and applied to a substrate surface after which it is baked to form an anti-reflective layer. The resulting layer has high k values, improved etch rates, and can be formulated for both conformal and planar applications.

9. 发明授权

US06512084B2 Anti-reflective coating compositions comprising polymerized aminoplasts 有权
公开(公告)号：US06512084B2
公开(公告)日：2003-01-28
申请号：US10122069
申请日：2002-04-12
申请人： Rama Puligadda , Runhui Huang
发明人： Rama Puligadda , Runhui Huang
IPC分类号： C08G7306
CPC分类号： G02B1/111 , C08L61/28 , Y10T428/31504 , Y10T428/31667 , Y10T428/31862 , Y10T428/31942
摘要： Improved anti-reflective coating compositions for use in integrated circuit manufacturing processes and methods of forming these compositions are provided. Broadly, the compositions are formed by heating a solution comprising a compound including specific compounds (e.g., alkoxy alkyl melamines, alkoxy alkyl benzoguanamines) under acidic conditions so as to polymerize the compounds and form polymers having an average molecular weight of at least about 1,000 Daltons. The monomers of the resulting polymers are joined to one another via linkage groups (e.g., —CH2—, —CH2—O—CH2—) which are bonded to nitrogen atoms on the respective monomers. The polymerized compound is mixed with a solvent and applied to a substrate surface after which it is baked to form an anti-reflective layer. The resulting layer has high k values, improved etch rates, and can be formulated for both conformal and planar applications.

10. 发明授权

US06495305B1 Halogenated anti-reflective coatings 有权
公开(公告)号：US06495305B1
公开(公告)日：2002-12-17
申请号：US09679661
申请日：2000-10-04
申请人： Tomoyuki Enomoto , Ken-Ichi Mizusawa , Shin-Ya Arase , Rama Puligadda
发明人： Tomoyuki Enomoto , Ken-Ichi Mizusawa , Shin-Ya Arase , Rama Puligadda
IPC分类号： G03F7004
CPC分类号： G03F7/091 , Y10S430/108
摘要： Anti-reflective coatings formed from new polymers and having high etch rates are provided. Broadly, the coatings are formed from a polymer binder and a light attenuating compound. The polymer binder has halogen atoms bonded thereto, preferably to functional groups on the polymer binder rather than to the polymer backbone. Preferred polymer binders comprise acrylic polymers while it is preferred that the halogenated functional groups of the polymer binders be dihalogenated, and more preferably trihalogenated, with chlorine, fluorine, or bromine atoms.

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