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1. 发明申请

US20140328113A1 PRE-CHARGING BITLINES IN A STATIC RANDOM ACCESS MEMORY (SRAM) PRIOR TO DATA ACCESS FOR REDUCING LEAKAGE POWER, AND RELATED SYSTEMS AND METHODS 有权
标题翻译：在降低漏电功率的数据访问之前的静态随机访问存储器（SRAM）中的预充电位，以及相关系统和方法
公开(公告)号：US20140328113A1
公开(公告)日：2014-11-06
申请号：US14049312
申请日：2013-10-09
申请人： QUALCOMM Incorporated
发明人： Chiaming Chai , Shaoping Ge , Stephen Edward Liles , Kunal Garg
IPC分类号： G11C11/413
CPC分类号： G11C11/413 , G11C7/1042 , G11C7/1075 , G11C7/12 , G11C11/412 , G11C11/419
摘要： Embodiments disclosed herein include methods and apparatuses for pre-charging bitlines in a static random access memory (SRAM) prior to data access for reducing leakage power. The memory access logic circuit receives a memory access request comprising a data entry address to be accessed in a first data access path of a SRAM data array of the SRAM. The SRAM also includes a pre-charge circuit provided in a second data access path outside the first data access path. The pre-charge circuit is configured to enable pre-charging of the SRAM data array as part of the memory access request to avoid pre-charging bitlines in the SRAM data array during idle periods to reduce leakage power. The pre-charge circuit can enable pre-charging of the SRAM data array prior to data access such that the pre-charge circuit does not add latency to the first data access path.
摘要翻译：本文公开的实施例包括用于在用于减少泄漏功率的数据访问之前在静态随机存取存储器（SRAM）中预充电位线的方法和装置。存储器访问逻辑电路接收存储器访问请求，该存储器访问请求包括要在SRAM的SRAM数据阵列的第一数据访问路径中访问的数据输入地址。 SRAM还包括在第一数据访问路径外的第二数据访问路径中提供的预充电电路。预充电电路被配置为使得SRAM数据阵列能够作为存储器访问请求的一部分进行预充电，以避免在空闲周期期间在SRAM数据阵列中预先充电位线以减少漏电功率。预充电电路可以在数据访问之前对SRAM数据阵列进行预充电，使得预充电电路不会对第一数据存取路径增加等待时间。

2. 发明授权

US09911472B1 Write bitline driver for a dual voltage domain 有权
公开(公告)号：US09911472B1
公开(公告)日：2018-03-06
申请号：US15362795
申请日：2016-11-28
申请人： QUALCOMM Incorporated
发明人： Shaoping Ge , Chiaming Chai , Stephen Edward Liles , Manish Garg
IPC分类号： G11C7/12 , G11C7/22 , G11C7/10
CPC分类号： G11C7/12 , G11C5/14 , G11C7/1006 , G11C7/1096 , G11C7/18 , G11C7/22
摘要： Systems and methods are directed to managing signals in a dual voltage domain comprising a high voltage domain and a low voltage domain. A write bitline driver circuit receives complementary global write bitline signals as input signals from a global write bitline driver in the low voltage domain, and a write enable signal as an input signal in the high voltage domain. The write bitline driver circuit generates complementary local write bitline signals as output signals in the high voltage domain for activating bitlines of a memory bank in the high voltage domain. The complementary local write bitline signals are based on the complementary global write bitline signals, voltage level shifted from the low voltage domain to the high voltage domain and gated by the write enable signal.

3. 发明申请

US20170047930A1 DYNAMIC VOLTAGE LEVEL SHIFTERS EMPLOYING PULSE GENERATION CIRCUITS, AND RELATED SYSTEMS AND METHODS 有权
标题翻译：采用脉冲发生电路的动态电压水平变换器及相关系统和方法
公开(公告)号：US20170047930A1
公开(公告)日：2017-02-16
申请号：US14827125
申请日：2015-08-14
申请人： QUALCOMM Incorporated
发明人： Chiaming Chai , Shaoping Ge , Stephen Edward Liles , Chintan Hemendrakumar Shah
IPC分类号： H03K19/0185 , H03K19/20
CPC分类号： H03K19/018528 , H03K3/356121 , H03K19/0963 , H03K19/20
摘要： Dynamic voltage level shifters employing pulse generation circuits are disclosed. In one aspect, a dynamic voltage level shifter includes a dynamic voltage level shifting circuit. The dynamic voltage level shifting circuit includes a pre-charge circuit configured to provide supply voltage of a first voltage domain to a dynamic node in response to a clock signal having pre-charge voltage. An evaluate circuit is configured to provide ground voltage to the dynamic node in response to an input signal having an active voltage while the clock signal has evaluate voltage. A keeper circuit is configured to provide a reduced drive strength to the dynamic node in response to pulse signal. The pulse signal is generated by a pulse generation circuit, wherein a pulse width of the pulse signal correlates to a difference in supply voltages of first and second voltage domains.
摘要翻译：公开了采用脉冲发生电路的动态电压电平移位器。一方面，动态电压电平移位器包括动态电压电平移位电路。动态电压电平移位电路包括预充电电路，其被配置为响应于具有预充电电压的时钟信号向动态节点提供第一电压域的电源电压。评估电路被配置为当时钟信号具有评估电压时响应于具有有效电压的输入信号向动态节点提供接地电压。保持器电路被配置为响应于脉冲信号向动态节点提供降低的驱动强度。脉冲信号由脉冲发生电路产生，其中脉冲信号的脉冲宽度与第一和第二电压域的电源电压的差异相关。

4. 发明申请

US20140337573A1 REDIRECTING DATA FROM A DEFECTIVE DATA ENTRY IN MEMORY TO A REDUNDANT DATA ENTRY PRIOR TO DATA ACCESS, AND RELATED SYSTEMS AND METHODS 有权
标题翻译：将数据从存储器中的有害数据输入重定向到数据访问之前的冗余数据输入，以及相关系统和方法
公开(公告)号：US20140337573A1
公开(公告)日：2014-11-13
申请号：US14017760
申请日：2013-09-04
申请人： QUALCOMM Incorporated
发明人： Chiaming Chai , Shaoping Ge , Stephen E. Liles
IPC分类号： G06F3/06
CPC分类号： G06F3/0689 , G06F3/0619 , G06F3/0665 , G11C29/785 , G11C29/848
摘要： Embodiments disclosed include redirecting data from a defective data entry in memory to a redundant data entry prior to data access. Related systems and methods are also disclosed. The memory is configured to receive a memory access request. The received memory access request comprises a data entry address. The memory uses the data entry address to access data stored in a data array in the memory in a first data access path. It is possible that the rows or columns in the memory may be defective as a result of a manufacturing process. In the event that a row or column at the data entry address in the data array is defective, a data entry redirection circuit redirects the memory access request to a redundant row or column in the data array prior to data access.
摘要翻译：所披露的实施例包括在数据访问之前将数据从存储器中的缺陷数据条目重定向到冗余数据条目。还公开了相关系统和方法。存储器被配置为接收存储器访问请求。所接收的存储器访问请求包括数据输入地址。存储器使用数据输入地址来访问存储在第一数据访问路径中的存储器中的数据阵列中的数据。作为制造过程的结果，存储器中的行或列可能是有缺陷的。在数据阵列中的数据输入地址上的行或列有缺陷的情况下，在数据访问之前，数据输入重定向电路将存储器访问请求重定向到数据阵列中的冗余行或列。

5. 发明授权

US09608637B2 Dynamic voltage level shifters employing pulse generation circuits, and related systems and methods 有权
公开(公告)号：US09608637B2
公开(公告)日：2017-03-28
申请号：US14827125
申请日：2015-08-14
申请人： QUALCOMM Incorporated
发明人： Chiaming Chai , Shaoping Ge , Stephen Edward Liles , Chintan Hemendrakumar Shah
IPC分类号： H03K19/20 , H03K19/0185
CPC分类号： H03K19/018528 , H03K3/356121 , H03K19/0963 , H03K19/20
摘要： Dynamic voltage level shifters employing pulse generation circuits are disclosed. In one aspect, a dynamic voltage level shifter includes a dynamic voltage level shifting circuit. The dynamic voltage level shifting circuit includes a pre-charge circuit configured to provide supply voltage of a first voltage domain to a dynamic node in response to a clock signal having pre-charge voltage. An evaluate circuit is configured to provide ground voltage to the dynamic node in response to an input signal having an active voltage while the clock signal has evaluate voltage. A keeper circuit is configured to provide a reduced drive strength to the dynamic node in response to pulse signal. The pulse signal is generated by a pulse generation circuit, wherein a pulse width of the pulse signal correlates to a difference in supply voltages of first and second voltage domains.

6. 发明授权

US09442675B2 Redirecting data from a defective data entry in memory to a redundant data entry prior to data access, and related systems and methods 有权
标题翻译：在数据访问之前将数据从存储器中的有缺陷的数据条目重定向到冗余数据条目，以及相关的系统和方法
公开(公告)号：US09442675B2
公开(公告)日：2016-09-13
申请号：US14017760
申请日：2013-09-04
申请人： QUALCOMM Incorporated
发明人： Chiaming Chai , Shaoping Ge , Stephen Edward Liles
IPC分类号： G06F12/00 , G06F3/06 , G11C29/00
CPC分类号： G06F3/0689 , G06F3/0619 , G06F3/0665 , G11C29/785 , G11C29/848
摘要： Embodiments disclosed include redirecting data from a defective data entry in memory to a redundant data entry prior to data access. Related systems and methods are also disclosed. The memory is configured to receive a memory access request. The received memory access request comprises a data entry address. The memory uses the data entry address to access data stored in a data array in the memory in a first data access path. It is possible that the rows or columns in the memory may be defective as a result of a manufacturing process. In the event that a row or column at the data entry address in the data array is defective, a data entry redirection circuit redirects the memory access request to a redundant row or column in the data array prior to data access.
摘要翻译：所公开的实施例包括在数据访问之前将数据从存储器中的缺陷数据条目重定向到冗余数据条目。还公开了相关系统和方法。存储器被配置为接收存储器访问请求。所接收的存储器访问请求包括数据输入地址。存储器使用数据输入地址来访问存储在第一数据访问路径中的存储器中的数据阵列中的数据。作为制造过程的结果，存储器中的行或列可能是有缺陷的。在数据阵列中的数据输入地址的行或列有缺陷的情况下，在数据访问之前，数据输入重定向电路将存储器访问请求重定向到数据阵列中的冗余行或列。

7. 发明授权

US09007817B2 Pre-charging bitlines in a static random access memory (SRAM) prior to data access for reducing leakage power, and related systems and methods 有权
标题翻译：在数据访问之前在静态随机存取存储器（SRAM）中预充电位线，以减少漏电功率，以及相关的系统和方法
公开(公告)号：US09007817B2
公开(公告)日：2015-04-14
申请号：US14049312
申请日：2013-10-09
申请人： QUALCOMM Incorporated
发明人： Chiaming Chai , Shaoping Ge , Stephen Edward Liles , Kunal Garg
IPC分类号： G11C11/00 , G11C11/413 , G11C7/12 , G11C11/412 , G11C11/419 , G11C7/10
CPC分类号： G11C11/413 , G11C7/1042 , G11C7/1075 , G11C7/12 , G11C11/412 , G11C11/419
摘要： Embodiments disclosed herein include methods and apparatuses for pre-charging bitlines in a static random access memory (SRAM) prior to data access for reducing leakage power. The memory access logic circuit receives a memory access request comprising a data entry address to be accessed in a first data access path of a SRAM data array of the SRAM. The SRAM also includes a pre-charge circuit provided in a second data access path outside the first data access path. The pre-charge circuit is configured to enable pre-charging of the SRAM data array as part of the memory access request to avoid pre-charging bitlines in the SRAM data array during idle periods to reduce leakage power. The pre-charge circuit can enable pre-charging of the SRAM data array prior to data access such that the pre-charge circuit does not add latency to the first data access path.
摘要翻译：本文公开的实施例包括用于在用于减少泄漏功率的数据访问之前在静态随机存取存储器（SRAM）中预充电位线的方法和装置。存储器访问逻辑电路接收存储器访问请求，该存储器访问请求包括要在SRAM的SRAM数据阵列的第一数据访问路径中访问的数据输入地址。 SRAM还包括在第一数据访问路径外部的第二数据访问路径中提供的预充电电路。预充电电路被配置为使得SRAM数据阵列能够作为存储器访问请求的一部分进行预充电，以避免在空闲周期期间在SRAM数据阵列中预先充电位线以减少漏电功率。预充电电路可以在数据访问之前对SRAM数据阵列进行预充电，使得预充电电路不会对第一数据存取路径增加等待时间。

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