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1. 发明授权

US10896949B2 Inductor/transformer with closed ring 有权
公开(公告)号：US10896949B2
公开(公告)日：2021-01-19
申请号：US16106160
申请日：2018-08-21
申请人： QUALCOMM Incorporated
发明人： Haitao Cheng , Chao Song , Ye Lu
IPC分类号： H01L49/02 , H01F17/00 , H01L23/522 , H01L27/08
摘要： Aspects generally relate to adjusting, or lowering, the Q of an inductor. In one embodiment, an integrated circuit includes an inductor and a conductive closed ring inside a periphery of the inductor. In another embodiment, there can be a plurality of closed rings inside the periphery of the inductor. The conductive closed rings are magnetically coupled to the inductor to adjust the Q.

2. 发明授权

US10629590B2 Stacked resistor-capacitor delay cell 有权
公开(公告)号：US10629590B2
公开(公告)日：2020-04-21
申请号：US16115206
申请日：2018-08-28
申请人： QUALCOMM Incorporated
发明人： Ye Lu , Chao Song , Haitao Cheng
IPC分类号： H01L27/06 , H01L27/02 , H01L49/02 , H01L23/522 , H03K5/00
CPC分类号： H01L27/0629 , H01L23/5223 , H01L27/0207 , H01L28/60 , H03K2005/00195
摘要： A resistor-capacitor (RC) delay circuit includes a first capacitor at a first level, a resistor at a second level and a second capacitor at a third level. The second capacitor is electrically connected in parallel with the first capacitor. The second capacitor has a footprint within a footprint of the first capacitor. The resistor is coupled in shunt with the first capacitor and the second capacitor.

3. 发明授权

US11289365B2 Air gap underneath passive devices 有权
公开(公告)号：US11289365B2
公开(公告)日：2022-03-29
申请号：US16676663
申请日：2019-11-07
申请人： QUALCOMM Incorporated
发明人： Junjing Bao , Ye Lu , Haitao Cheng
IPC分类号： H01L21/64 , H01L29/06 , H01L49/02 , H01L21/764
摘要： Certain aspects of the present disclosure generally relate to a semiconductor device including an air gap underneath passive devices. The semiconductor device generally includes a substrate layer, a passive device layer, and a dielectric layer disposed between the substrate layer and the passive device layer, wherein the dielectric layer includes an air gap disposed beneath at least one passive device in the passive device layer.

4. 发明授权

US10840872B2 Low-pass filter utilizing mutual inductance 有权
公开(公告)号：US10840872B2
公开(公告)日：2020-11-17
申请号：US16275574
申请日：2019-02-14
申请人： QUALCOMM Incorporated
发明人： Haitao Cheng , Yanming Xiao , Wu-Hsin Chen , Li Liu , Masoud Moslehi Bajestan
IPC分类号： H03H7/09 , H03H7/01 , H04B1/16
CPC分类号： H03H7/0115 , H03H7/0153 , H03H7/09 , H03H2210/012 , H03H2210/025 , H04B1/16
摘要： A low-pass filter having a notch frequency due to a resonance between a mutual inductance of inductive elements and a capacitance. An exemplary low-pass filter generally includes a first inductive element having a first terminal and a second terminal, the first terminal being coupled to the input port, and a second inductive element having a first terminal and a second terminal, the first terminal of the second inductive element being coupled to the second terminal of the first inductive element and the second terminal of the second inductive element being coupled to the output port. The filter also includes a shunt capacitive element coupled to the second terminal of the first inductive element, wherein a mutual inductance between the first inductive element and the second inductive element and a capacitance of the shunt capacitive element are configured to have a resonance providing a notch frequency for the low-pass filter.

5. 发明授权

US10643985B2 Capacitor array overlapped by on-chip inductor/transformer 有权
公开(公告)号：US10643985B2
公开(公告)日：2020-05-05
申请号：US16004920
申请日：2018-06-11
申请人： QUALCOMM Incorporated
发明人： Haitao Cheng , Zhang Jin
IPC分类号： H01L23/66 , H01L23/522 , H01L27/01 , H01L21/70 , H01L49/02 , H01L29/94
CPC分类号： H01L27/013 , H01L21/705 , H01L23/5222 , H01L23/5227 , H01L23/66 , H01L28/10 , H01L28/40 , H01L28/86 , H01L28/90 , H01L29/94
摘要： An integrated circuit (IC) includes a capacitor array in at least one first back-end-of-line (BEOL) interconnect level. The capacitor array includes a pair of capacitor manifolds coupled to parallel capacitor routing traces and capacitors coupled between each pair of parallel capacitor routing traces. The IC also includes an inductor trace having at least one turn in at least one second BEOL interconnect level. The inductor trace defines a perimeter to overlap at least a portion of the capacitor array.

6. 发明授权

US10600569B2 Finger metal-on-metal capacitor containing negative capacitance material 有权
公开(公告)号：US10600569B2
公开(公告)日：2020-03-24
申请号：US15961594
申请日：2018-04-24
申请人： QUALCOMM Incorporated
发明人： Ye Lu , Haitao Cheng , Chao Song
IPC分类号： H01L23/52 , H01G4/10 , H01L23/522 , H01G4/01
摘要： Methods, systems, and devices for a finger metal-on-metal (FMOM) capacitor including a negative capacitance material are described. In one examples, a FMOM capacitor may include a first electrode and a second electrode. The FMOM capacitor may include a dielectric layer coating a first sidewall of the first electrode and a second sidewall of a second electrode. A portion of the first sidewall may be substantially parallel to a portion of the second sidewall. The FMOM capacitor may also include a negative capacitance material disposed in a channel between the first sidewall of the first electrode and the second sidewall of the second electrode. The negative capacitance material may extend in a direction that is substantially parallel to the portion of the first sidewall and the portion of the second sidewall.

7. 发明授权

US10511278B2 Transformer with high common-mode rejection ratio (CMRR) 有权
公开(公告)号：US10511278B2
公开(公告)日：2019-12-17
申请号：US15959824
申请日：2018-04-23
申请人： QUALCOMM Incorporated
发明人： Haitao Cheng , Zhang Jin
IPC分类号： H03H7/42 , H01F27/29 , H01F27/42
摘要： Certain aspects of the present disclosure are generally directed to a structure for a balanced-unbalanced (balun) transformer. For example, certain aspects of the present disclosure provide a transformer that generally includes a first winding having a first terminal coupled to an input node and a second terminal coupled to a reference potential node. The transformer may also include a first impedance coupled between a center tap of the first winding and the reference potential node, and a second winding magnetically coupled to the first winding and having a first terminal coupled to a first differential node of a differential output pair, a second terminal coupled to a second differential node of the differential output pair, and a center tap coupled to the reference potential node.

8. 发明授权

US10236573B2 On-chip coupling capacitor with patterned radio frequency shielding structure for lower loss 有权
公开(公告)号：US10236573B2
公开(公告)日：2019-03-19
申请号：US15687065
申请日：2017-08-25
申请人： QUALCOMM Incorporated
发明人： Haitao Cheng , Zhang Jin
IPC分类号： H01Q1/52 , H01Q1/48 , H01Q1/22
摘要： A capacitor radio frequency (RF) shielding structure may include a ground plane partially surrounding a coupling capacitor in an RF signal path. The ground plane may include a first ground plane portion extending between a positive terminal of the RF signal path and a negative terminal of the RF signal path. The ground plane may include a second ground plane portion extending between the positive terminal and the negative terminal of the RF signal path. The second ground plane portion may be opposed the first ground plane portion. The capacitor RF shielding structure may also include a patterned shielding layer electrically contacting the first ground plane portion and/or the second ground plane portion. The patterned shielding layer may electrically disconnecting a return current path over the patterned shielding layer to confine a return current to flowing over the first ground plane portion or the second ground plane portion.

9. 发明授权

US11004784B2 Metal-on-metal capacitor 有权
公开(公告)号：US11004784B2
公开(公告)日：2021-05-11
申请号：US16158742
申请日：2018-10-12
申请人： QUALCOMM Incorporated
发明人： Haitao Cheng , Ye Lu , Chao Song
IPC分类号： H01L23/52 , H01L23/522 , H01L23/58 , H01G4/06 , H01L49/02
摘要： Certain aspects of the present disclosure provide a metal-on-metal (MoM) capacitor with metal layers, each layer having two different electrical conductors with orthogonally-arranged conductive arteries and orthogonally-oriented conductive fingers. One exemplary MoM capacitor generally includes a plurality of metal layers, wherein a first metal layer in the plurality of metal layers comprises a first electrical conductor providing a first node of the MoM capacitor and a second electrical conductor providing a second node of the MoM capacitor. According to aspects, the first electrical conductor comprises a first plurality of conductive fingers and the second electrical conductor comprises a second plurality of conductive fingers. Further, conductive fingers of the first plurality of conductive fingers are interdigitated with conductive fingers of the second plurality of conductive fingers. Additionally, the first electrical conductor in the first metal layer is oriented orthogonal to the second electrical conductor in the first metal layer.

10. 发明授权

US10972068B2 Process-invariant delay cell 有权
公开(公告)号：US10972068B2
公开(公告)日：2021-04-06
申请号：US16023186
申请日：2018-06-29
申请人： QUALCOMM Incorporated
发明人： Chao Song , Haitao Cheng , Ye Lu , Dongjiang Qiao
IPC分类号： H03H7/30 , H03H1/02 , H03H3/00 , H03H7/06 , H01L49/02 , H01L23/66 , H01L23/522 , H01L23/528 , H01L23/532
摘要： An integrated circuit (IC) device includes a first resistive strip having an input terminal and an output terminal. The IC device further includes a second resistive strip having a terminal coupled to a voltage. The second resistive strip may be coplanar with the first resistive strip. The IC device further includes a capacitor formed by the first resistive strip and the second resistive strip.

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