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1. 发明授权

US10924110B2 High speed switching solid state relay circuit 有权
公开(公告)号：US10924110B2
公开(公告)日：2021-02-16
申请号：US16551516
申请日：2019-08-26
申请人： QM Power, Inc.
发明人： Charles J Flynn , Cooper Tracy , Scott Hunter
IPC分类号： H03K17/785 , H02M1/32 , H02M7/217 , H02J4/00 , H03K17/687 , H02M5/293
摘要： A method for high speed switching comprises receiving voltage inputs at a bridge rectifier, receiving a logic input signal at an optical isolator and generating an output signal from the optical isolator based on the logic input signal, and driving a gate of a field effect transistor (FET) via the output signal of the optical isolator, wherein a source of the FET is connected to a negative output of the bridge rectifier and a drain of the FET is connected to a positive output of the bridge rectifier through a load. The method further includes limiting current flowing to the gate of the FET through first and second resistors and first and second diodes connecting the voltage inputs to the gate of the FET and limiting voltage to the gate of the FET below a maximum voltage rating of the FET by a Zener diode connected to the gate of the FET.

2. 发明授权

US10396781B2 High speed switching solid state relay circuit 有权
公开(公告)号：US10396781B2
公开(公告)日：2019-08-27
申请号：US16025984
申请日：2018-07-02
申请人： QM Power, Inc.
发明人： Charles J Flynn , Cooper Tracy , Scott Hunter
IPC分类号： H02M1/32 , H03K17/785 , H02M7/217 , H02J4/00 , H03K17/687 , H02M5/293
摘要： A switching circuit includes a bridge rectifier to receive voltage inputs and an optical isolator to receive a logic input signal and generate an output signal based on the logic input signal. The high speed switching circuit also includes a field effect transistor (FET) with a source connected to a negative output of the bridge rectifier, a drain connected to a positive output of the bridge rectifier through a load, and a gate driven by the output signal of the optical isolator. First and second resistors connect the voltage inputs to the gate of the FET through first and second diodes. The first and second resistors and the first and second diodes limit current flowing to the gate of the FET. A Zener diode connected to the gate of the FET limits voltage to the gate of the FET below a maximum voltage rating of the FET.

3. 发明授权

US10014858B2 High speed switching solid state relay circuit 有权
公开(公告)号：US10014858B2
公开(公告)日：2018-07-03
申请号：US15228780
申请日：2016-08-04
申请人： QM Power, Inc.
发明人： Charles J. Flynn , Cooper Tracy , Scott Hunter
IPC分类号： H02M1/32 , H03K17/785 , H02M7/217 , H02J4/00 , H03K17/687 , H02M5/293
CPC分类号： H03K17/785 , H02J4/00 , H02M1/32 , H02M7/2176 , H02M2005/2937 , H03K17/6871
摘要： A switching circuit includes a bridge rectifier to receive voltage inputs across a load and an optical isolator to receive a logic input signal and generate an output signal based on the logic input signal. The high speed switching circuit also includes a field effect transistor (FET) with a source connected to a negative output of the bridge rectifier, a drain connected to a positive output of the bridge rectifier through a second load, and a gate driven by the output signal of the optical isolator. First and second resistors connect the voltage inputs to the gate of the FET through first and second diodes. The first and second resistors and the first and second diodes limit current flowing to the gate of the FET. A Zener diode connected to the gate of the FET limits voltage to the gate of the FET below a maximum voltage rating of the FET.

4. 发明申请

US20160344385A1 HIGH SPEED SWITCHING SOLID STATE RELAY CIRCUIT 有权
标题翻译：高速开关固态继电器电路
公开(公告)号：US20160344385A1
公开(公告)日：2016-11-24
申请号：US15228780
申请日：2016-08-04
申请人： QM Power, Inc.
发明人： Charles J. Flynn , Cooper Tracy , Scott Hunter
IPC分类号： H03K17/785 , H03K17/687 , H02J4/00
CPC分类号： H03K17/785 , H02J4/00 , H02M1/32 , H02M7/2176 , H02M2005/2937 , H03K17/6871
摘要： A switching circuit includes a bridge rectifier to receive voltage inputs across a load and an optical isolator to receive a logic input signal and generate an output signal based on the logic input signal. The high speed switching circuit also includes a field effect transistor (FET) with a source connected to a negative output of the bridge rectifier, a drain connected to a positive output of the bridge rectifier through a second load, and a gate driven by the output signal of the optical isolator. First and second resistors connect the voltage inputs to the gate of the FET through first and second diodes. The first and second resistors and the first and second diodes limit current flowing to the gate of the FET. A Zener diode connected to the gate of the FET limits voltage to the gate of the FET below a maximum voltage rating of the FET.
摘要翻译：开关电路包括桥接整流器，用于接收跨负载的电压输入和光隔离器以接收逻辑输入信号并基于逻辑输入信号生成输出信号。高速开关电路还包括场效应晶体管（FET），源极连接到桥式整流器的负极输出端，漏极通过第二负载连接到桥式整流器的正输出端，以及由输出端驱动的栅极光隔离器的信号。第一和第二电阻通过第一和第二二极管将电压输入连接到FET的栅极。第一和第二电阻器以及第一和第二二极管限制流向FET栅极的电流。连接到FET的栅极的齐纳二极管将FET的栅极的电压限制在FET的最大额定电压以下。

5. 发明授权

US09438101B1 High speed switching solid state relay circuit 有权
标题翻译：高速开关固态继电器电路
公开(公告)号：US09438101B1
公开(公告)日：2016-09-06
申请号：US14706010
申请日：2015-05-07
申请人： QM Power, Inc.
发明人： Charles J. Flynn , Cooper Tracy , Scott Hunter
IPC分类号： H02M1/32 , H02M7/06
CPC分类号： H03K17/785 , H02J4/00 , H02M1/32 , H02M7/2176 , H02M2005/2937 , H03K17/6871
摘要： The invention discloses a high speed switching solid state relay circuit with a switching section, a current limiting section and a voltage limiting section. The switching section comprises a bridge rectifier receiving the load voltage inputs, a MOSFET with a source connected to the negative voltage of the load through the bridge rectifier, a drain connected to the load voltage output, and a gate. The switching section further includes an isolator circuit comprising an optically-coupled LED. The isolator circuit is configured to receive a logic input signal and generate an isolated output signal based on the logic input signal, and the gate of the MOSFET is driven by the isolated output signal. The current limiting section includes a first set of resistors connecting the voltage drop across the load to the gate of the MOSFET through diodes. The voltage limiting section comprises a Zener diode connected to the gate of the MOSFET.
摘要翻译：本发明公开了一种具有开关部分，限流部分和限压部分的高速开关式固态继电器电路。开关部分包括接收负载电压输入的桥式整流器，具有通过桥式整流器连接到负载的负电压的源极的MOSFET，连接到负载电压输出的漏极和栅极。切换部分还包括隔离器电路，其包括光耦合LED。隔离器电路被配置为接收逻辑输入信号并且基于逻辑输入信号产生隔离的输出信号，并且MOSFET的栅极由隔离的输出信号驱动。电流限制部分包括第一组电阻器，其通过二极管将负载两端的压降连接到MOSFET的栅极。电压限制部分包括连接到MOSFET的栅极的齐纳二极管。

6. 发明申请

US20180316347A1 High Speed Switching Solid State Relay Circuit 审中-公开
公开(公告)号：US20180316347A1
公开(公告)日：2018-11-01
申请号：US16025984
申请日：2018-07-02
申请人： QM Power, Inc.
发明人： Charles J. Flynn , Cooper Tracy , Scott Hunter
IPC分类号： H03K17/785 , H03K17/687 , H02M1/32
CPC分类号： H03K17/785 , H02J4/00 , H02M1/32 , H02M7/2176 , H02M2005/2937 , H03K17/6871
摘要： A switching circuit includes a bridge rectifier to receive voltage inputs and an optical isolator to receive a logic input signal and generate an output signal based on the logic input signal. The high speed switching circuit also includes a field effect transistor (FET) with a source connected to a negative output of the bridge rectifier, a drain connected to a positive output of the bridge rectifier through a load, and a gate driven by the output signal of the optical isolator. First and second resistors connect the voltage inputs to the gate of the FET through first and second diodes. The first and second resistors and the first and second diodes limit current flowing to the gate of the FET. A Zener diode connected to the gate of the FET limits voltage to the gate of the FET below a maximum voltage rating of the FET.

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