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1. 发明申请

US20060105518A1 Ultra-shallow arsenic junction formation in silicon germanium 有权
标题翻译：硅锗中的超浅砷结点形成
公开(公告)号：US20060105518A1
公开(公告)日：2006-05-18
申请号：US11267413
申请日：2005-11-04
申请人： Puneet Kohli , Mark Rodder , Rick Wise , Amitabh Jain
发明人： Puneet Kohli , Mark Rodder , Rick Wise , Amitabh Jain
IPC分类号： H01L21/8238 , H01L21/336
CPC分类号： H01L21/26506 , H01L21/823807 , H01L21/823814 , H01L29/1054 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： In one aspect, the present invention provides a method of forming junctions in a silicon-germanium layer (20). In this particular embodiment, the method comprises implanting a dopant (80) into the silicon-germanium layer (20) and implanting fluorine (70) into the silicon-germanium layer (20).
摘要翻译：一方面，本发明提供一种在硅 - 锗层（20）中形成结的方法。在该特定实施例中，该方法包括将掺杂剂（80）注入到硅 - 锗层（20）中并将氟（70）注入到硅 - 锗层（20）中。

2. 发明授权

US07163878B2 Ultra-shallow arsenic junction formation in silicon germanium 有权
标题翻译：硅锗中的超浅砷结点形成
公开(公告)号：US07163878B2
公开(公告)日：2007-01-16
申请号：US11267413
申请日：2005-11-04
申请人： Puneet Kohli , Mark Rodder , Rick Wise , Amitabh Jain
发明人： Puneet Kohli , Mark Rodder , Rick Wise , Amitabh Jain
IPC分类号： H01L21/265
CPC分类号： H01L21/26506 , H01L21/823807 , H01L21/823814 , H01L29/1054 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： In one aspect, the present invention provides a method of forming junctions in a silicon-germanium layer (20). In this particular embodiment, the method comprises implanting a dopant (80) into the silicon-germanium layer (20) and implanting fluorine (70) into the silicon-germanium layer (20).
摘要翻译：一方面，本发明提供一种在硅 - 锗层（20）中形成结的方法。在该特定实施例中，该方法包括将掺杂剂（80）注入到硅 - 锗层（20）中并将氟（70）注入到硅 - 锗层（20）中。

3. 发明申请

US20080268628A1 N-TYPE SEMICONDUCTOR COMPONENT WITH IMPROVED DOPANT IMPLANTATION PROFILE AND METHOD OF FORMING SAME 审中-公开
标题翻译：具有改进的嫁接轮廓的N型半导体元件及其形成方法
公开(公告)号：US20080268628A1
公开(公告)日：2008-10-30
申请号：US11739965
申请日：2007-04-25
申请人： Puneet Kohli , Manoj Mehrotra , Antonio Luis Pacheco Rotondaro , Stan Ashburn , Nandakumar Mahalingam , Amitabh Jain
发明人： Puneet Kohli , Manoj Mehrotra , Antonio Luis Pacheco Rotondaro , Stan Ashburn , Nandakumar Mahalingam , Amitabh Jain
IPC分类号： H01L21/425 , H01L29/00 , H01L21/22
CPC分类号： H01L21/26513 , H01L21/26506 , H01L29/66575
摘要： The disclosure relates to a method of forming an n-type doped active area on a semiconductor substrate that presents an improved placement profile. The method comprises the placement of arsenic in the presence of a carbon-containing arsenic diffusion suppressant in order to reduce the diffusion of the arsenic out of the target area during heat-induced annealing. The method may additionally include the placement of an amorphizer, such as germanium, in the target area in order to reduce channeling of the arsenic ions through the crystalline lattice. The method may also include the use of arsenic in addition to another n-type dopant, e.g. phosphorus, in order to offset some of the disadvantages of a pure arsenic dopant. The disclosure also relates to a semiconductor component, e.g. an NMOS transistor, formed in accordance with the described methods.
摘要翻译：本公开涉及一种在半导体衬底上形成n型掺杂有源区的方法，该方法具有改善的放置曲线。该方法包括在含碳的砷扩散抑制剂的存在下放置砷，以便在热诱导退火期间减少砷扩散到目标区域之外。该方法可以另外包括在目标区域中放置诸如锗的非晶硅化合物，以便减少砷离子通过晶格的通道。该方法还可以包括除了另一种n型掺杂剂之外使用砷，例如，磷，以便抵消纯砷掺杂剂的一些缺点。本公开还涉及半导体部件，例如，一个根据所述方法形成的NMOS晶体管。

4. 发明授权

US08580663B2 Formation of shallow junctions by diffusion from a dielectronic doped by cluster or molecular ion beams 有权
标题翻译：通过由簇或分子离子束掺杂的电介质扩散形成浅结
公开(公告)号：US08580663B2
公开(公告)日：2013-11-12
申请号：US13217577
申请日：2011-08-25
申请人： Amitabh Jain
发明人： Amitabh Jain
IPC分类号： H01L21/426
CPC分类号： H01L21/823814 , H01L21/2251 , H01L21/2255 , H01L21/26566 , H01L21/823807 , H01L21/823842 , H01L21/84 , H01L29/6659 , H01L29/7833
摘要： A process for forming diffused region less than 20 nanometers deep with an average doping dose above 1014 cm−2 in an IC substrate, particularly LDD region in an MOS transistor, is disclosed. Dopants are implanted into a source dielectric layer using gas cluster ion beam (GCIB) implantation, molecular ion implantation or atomic ion implantation resulting in negligible damage in the IC substrate. A spike anneal or a laser anneal diffuses the implanted dopants into the IC substrate. The inventive process may also be applied to forming source and drain (S/D) regions. One source dielectric layer may be used for forming both NLDD and PLDD regions.
摘要翻译：公开了一种用于在IC衬底，特别是MOS晶体管中的LDD区域形成平均掺杂剂量高于1014cm -2的深度小于20nm的扩散区域的工艺。使用气体簇离子束（GCIB）注入，分子离子注入或原子离子注入将掺杂剂注入到源电介质层中，导致IC衬底中的可忽略的损伤。尖峰退火或激光退火将注入的掺杂剂扩散到IC衬底中。本发明的方法也可以应用于形成源极和漏极（S / D）区域。一个源介质层可用于形成NLDD和PLDD区域。

5. 发明授权

US08252609B2 Curvature reduction for semiconductor wafers 有权
标题翻译：半导体晶圆的曲率减少
公开(公告)号：US08252609B2
公开(公告)日：2012-08-28
申请号：US12757704
申请日：2010-04-09
申请人： Brian K. Kirkpatrick , Steven L. Prins , Amitabh Jain
发明人： Brian K. Kirkpatrick , Steven L. Prins , Amitabh Jain
IPC分类号： H01L21/26 , H01L21/66
CPC分类号： H01L21/26506 , H01L21/02532 , H01L21/02658 , H01L21/02667 , H01L22/12 , H01L22/20
摘要： A method for reducing curvature of a wafer having a semiconductor surface. One or more process steps are identified at which wafers exhibit the largest curvature, and/or wafer curvature that may reduce die yield. A crystal damaging process converts at least a portion of the semiconductor surface into at least one amorphous surface region After or contemporaneously with the crystal damaging, the amorphous surface region is recrystallized by recrystallization annealing that anneals the wafer for a time ≦5 seconds at a temperature sufficient for recrystallization of the amorphous surface region. A subsequent photolithography step is facilitated due to the reduction in average wafer curvature provided by the recrystallization.
摘要翻译：一种用于减小具有半导体表面的晶片的曲率的方法。识别一个或多个工艺步骤，在该处理步骤中，晶片呈现最大的曲率，和/或晶片曲率，其可以降低模具的产量。晶体损伤过程将半导体表面的至少一部分转化成至少一个非晶表面区域在晶体损坏之后或同时与晶体有害的同时，非晶表面区域通过重结晶退火重结晶，使晶片退火一段时间，足以使非晶表面区域再结晶的温度。由于再结晶提供的平均晶片曲率的减小，随后的光刻步骤变得容易。

6. 发明授权

US07883573B2 Method for preparing a source material for ion implantation 有权
标题翻译：离子注入源材料的制备方法
公开(公告)号：US07883573B2
公开(公告)日：2011-02-08
申请号：US11697790
申请日：2007-04-09
申请人： Amitabh Jain
发明人： Amitabh Jain
IPC分类号： C09D201/00
CPC分类号： H01J37/08 , H01J2237/31701 , H01L21/26513 , H01L21/823418 , H01L29/6659 , Y10S252/95
摘要： The present invention provides, for use in a semiconductor manufacturing process, a method (100) of preparing an ion-implantation source material. The method includes providing (110) a deliquescent ion implantation source material and mixing (110) the deliquescent ion implantation source material with an organic liquid to form a paste.
摘要翻译：为了在半导体制造工艺中使用本发明，提供了制备离子注入源材料的方法（100）。该方法包括提供（110）潮解离子注入源材料，并将潮解离子注入源材料与有机液体混合（110）以形成糊状物。

7. 发明授权

US07678637B2 CMOS fabrication process 有权
标题翻译： CMOS制作工艺
公开(公告)号：US07678637B2
公开(公告)日：2010-03-16
申请号：US12209270
申请日：2008-09-12
申请人： Mahalingam Nandakumar , Song Zhao , Amitabh Jain
发明人： Mahalingam Nandakumar , Song Zhao , Amitabh Jain
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L21/26506 , H01L21/26513 , H01L21/26586 , H01L21/823814 , H01L29/1087 , H01L29/7847
摘要： Ultra high temperature (UHT) anneals above 1200 C for less than 100 milliseconds for PMOS transistors reduce end of range dislocations, but are incompatible with stress memorization technique (SMT) layers used to enhance NMOS on-state current. This invention reverses the conventional order of forming the NMOS first by forming PSD using carbon co-implants and UHT annealing them before implanting the NSD and depositing the SMT layer. End of range dislocation densities in the PSD space charge region below 100 cm−2 are achieved. Tensile stress in the PMOS from the SMT layer is significantly reduced. The PLDD may also be UHT annealed to reduce end of range dislocations close to the PMOS channel.
摘要翻译：对于PMOS晶体管，超高温（UHT）超过1200℃退火少于100毫秒会减少范围位错的终止，但与用于增强NMOS导通电流的应力记忆技术（SMT）层不兼容。本发明首先通过使用碳共注入形成PSD并且在植入NSD并沉积SMT层之前对其进行UHT退火来逆转形成NMOS的常规顺序。实现了低于100cm-2的PSD空间电荷区域的范围位错密度的结束。来自SMT层的PMOS中的拉伸应力显着降低。 PLDD还可以进行UHT退火以减少靠近PMOS沟道的范围位错的结束。

8. 发明授权

US07670917B2 Semiconductor device made by using a laser anneal to incorporate stress into a channel region 有权
标题翻译：通过使用激光退火制造的半导体器件将应力引入沟道区域
公开(公告)号：US07670917B2
公开(公告)日：2010-03-02
申请号：US11853328
申请日：2007-09-11
申请人： Amitabh Jain , Manoj Mehrotra
发明人： Amitabh Jain , Manoj Mehrotra
IPC分类号： H01L21/336 , H01L21/31 , H01L21/469
CPC分类号： H01L21/823807 , H01L21/26506 , H01L21/268 , H01L21/28044 , H01L29/6656 , H01L29/7843 , H01L29/7845
摘要： In one aspect there is provided a method of manufacturing a semiconductor device comprising forming gate electrodes over a semiconductor substrate, forming source/drains adjacent the gate electrodes, depositing a stress inducing layer over the gate electrodes. A laser anneal is conducted on at least the gate electrodes subsequent to depositing the stress inducing layer at a temperature of at least about 1100° C. for a period of time of at least about 300 microseconds, and the semiconductor device is subjected to a thermal anneal subsequent to conducting the laser anneal.
摘要翻译：在一个方面，提供一种制造半导体器件的方法，包括在半导体衬底上形成栅电极，在栅电极附近形成源极/漏极，在栅电极上沉积应力诱导层。在至少约1100℃的温度下沉积应力诱导层至少约300微秒的时间之后，至少在栅电极上进行激光退火，并且半导体器件经受热在进行激光退火之后退火。

9. 发明申请

US20070293012A1 REDUCTION OF SLIP AND PLASTIC DEFORMATIONS DURING ANNEALING BY THE USE OF ULTRA-FAST THERMAL SPIKES 审中-公开
标题翻译：通过使用超快速硅胶在退火过程中减少滑移和塑性变形
公开(公告)号：US20070293012A1
公开(公告)日：2007-12-20
申请号：US11762905
申请日：2007-06-14
申请人： Amitabh Jain
发明人： Amitabh Jain
IPC分类号： H01L21/336
CPC分类号： H01L21/324 , H01L21/268 , H01L29/6659 , H01L29/7833
摘要： Exemplary embodiments provide methods for reducing and/or removing slip and plastic deformations in semiconductor materials by use of one or more ultra-fast thermal spike anneals. The ultra-fast thermal spike anneal can be an ultra-high temperature (UHT) anneal having an ultra-short annealing time. During the ultra-fast thermal spike anneal, an increased annealing power density can be used to achieve a desired annealing temperature required by manufacturing processes. In an exemplary embodiment, the annealing temperature can be in the range of about 1150° C. to about 1390° C. and the annealing dwell time can be on the order of less than about 0.8 milliseconds. In various embodiments, the disclosed spike-annealing processes can be used to fabrication structures and regions of MOS transistor devices, for example, drain and source extension regions and/or drain and source regions.
摘要翻译：示例性实施例提供了通过使用一个或多个超快速热穗退火来减少和/或去除半导体材料中的滑移和塑性变形的方法。超快速热尖峰退火可以是具有超短退火时间的超高温（UHT）退火。在超快速热穗退火期间，可以使用增加的退火功率密度来实现制造工艺所需的期望的退火温度。在示例性实施例中，退火温度可以在约1150℃至约1390℃的范围内，并且退火停留时间可以在小于约0.8毫秒的数量级。在各种实施例中，所公开的尖峰退火工艺可用于制造MOS晶体管器件的结构和区域，例如漏极和源极延伸区域和/或漏极和源极区域。

10. 发明授权

US07306995B2 Reduced hydrogen sidewall spacer oxide 有权
公开(公告)号：US07306995B2
公开(公告)日：2007-12-11
申请号：US10739973
申请日：2003-12-17
申请人： Haowen Bu , Clinton L. Montgomery , Amitabh Jain
发明人： Haowen Bu , Clinton L. Montgomery , Amitabh Jain
IPC分类号： H01L21/336
CPC分类号： H01L29/4983 , H01L21/0214 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/02362 , H01L21/3145 , H01L21/31612 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： An embodiment of the invention is a method of making a semiconductor structure 10 where the spacer oxide layer 90 is formed by a hydrogen free precursor CVD process. Another embodiment of the invention is a semiconductor structure 10 having a spacer oxide layer 90 with a hydrogen content of less than 1%.

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