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    • 9. 发明授权
    • Integrated circuit Zener diode
    • 集成电路齐纳二极管
    • US4646114A
    • 1987-02-24
    • US687894
    • 1984-12-31
    • Charles L. VinnDavid J. Harris
    • Charles L. VinnDavid J. Harris
    • H01L29/861H01L29/866H01L29/90
    • H01L29/866
    • A subsurface Zener diode is provided wherein a semiconductor has formed thereon spaced apart anode and cathode regions of opposite type conductivity, such regions having opposing surface portions, and disposed beneath a surface of such semiconductor a buried region of conductivity type the same as one of such regions, such buried region extending laterally through the spaced apart regions, one of the spaced apart regions having an opposing surface portion thereof formed with a portion which protrudes towards the opposing surface portion of the other one of the spaced apart regions. With such arrangement, an electric field produced between the spaced apart regions becomes concentrated at the protrusion with the result that Zener breakdown occurs repeatedly at the same point in the semiconductor thereby reducing long term drift. Also, a Kelvin buried Zener diode is provided by forming a second laterally spaced anode region with the cathode region disposed between the pair of anode regions. One of the pair of anodes provides the force anode and the other the sense anode. The buried region extends laterally through the pair of anodes and the cathode region. The cathode region is provided with the portion which protrudes towards the force anode of the pair of anode regions and such cathode is elongated along an axis which passes between the pair of force and sense anode regions. The elongated cathode thus improves isolation between the force and sense anodes.
    • 提供了一个次表面的齐纳二极管,其中半导体已经在其上形成了具有相反导电性的间隔开的阳极和阴极区域,这些区域具有相对的表面部分,并且在这种半导体的表面下方设置与其中之一相同的导电类型的掩埋区域 区域,这样的掩埋区域横向延伸穿过间隔开的区域,其中一个间隔开的区域具有相对的表面部分,其形成有朝向另一个间隔开的区域的相对表面部分突出的部分。 通过这样的布置,在间隔开的区域之间产生的电场在突起处变得集中,结果是在半导体的同一点处重新产生齐纳击穿从而减少长期漂移。 此外,通过形成第二横向间隔开的阳极区域,其中阴极区域设置在一对阳极区域之间,提供开尔文掩埋齐纳二极管。 一对阳极中的一个提供了力阳极和另一个阳极。 埋入区域横向延伸穿过一对阳极和阴极区域。 阴极区域设置有朝向一对阳极区域的力阳极突出的部分,并且该阴极沿着在一对力和感测阳极区域之间通过的轴线延伸。 因此,细长的阴极改善了力和感应阳极之间的隔离。
    • 10. 发明授权
    • Digital-to-analog converter
    • 数模转换器
    • US4492954A
    • 1985-01-08
    • US608928
    • 1984-05-11
    • David J. HarrisCharles L. Vinn
    • David J. HarrisCharles L. Vinn
    • H03M1/00H03K13/05
    • H03M1/747
    • A digital-to-analog conversion circuitry is provided wherein a switching network is adapted to couple, or decouple, a selected one, or ones, of a plurality of identical current sources to, or from, an output bus selectively in accordance with the digital word being converted to produce an output current through an output bus having a level related to such digital word. The switching network includes: a logic network for selectively combining the plurality of bits of the digital word to produce a plurality of control signals, at least one thereof being related to a plurality of the bits of the digital word; and, a plurality of switching transistors, each one thereof having: a control (or base) electrode coupled to a corresponding one of the plurality of control signals; a first (or emitter) electrode coupled to a corresponding one of the plurality of identical current sources; and a second (or collector) electrode coupled to the output bus, such current source being coupled to, or decoupled from, such output bus selectively in accordance with the control signal fed to the control electrode of the transistor coupled to such current source, the logic network produces the plurality of control signals with substantially equal switching level variations.
    • 提供了一种数模转换电路,其中交换网络适于将多个相同电流源中的一个或多个选择的一个或多个耦合或去耦合到输出总线或从输出总线选择性地根据数字 字被转换以通过具有与这种数字字相关的电平的输出总线产生输出电流。 交换网络包括:逻辑网络,用于选择性地组合数字字的多个位以产生多个控制信号,其至少一个与数字字的多个位相关; 以及多个开关晶体管,其中的每一个具有:耦合到所述多个控制信号中的相应一个控制信号的控制(或基极)电极; 耦合到所述多个相同电流源中的相应一个的第一(或发射极)电极; 以及耦合到输出总线的第二(或集电极)电极,这样的电流源根据馈送到耦合到这种电流源的晶体管的控制电极的控制信号选择性地耦合到这种输出总线或从该输出总线去耦, 逻辑网络产生具有基本相等的开关电平变化的多个控制信号。