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1. 发明申请

US20050233135A1 Dew resistant coatings 有权
标题翻译：防露涂层
公开(公告)号：US20050233135A1
公开(公告)日：2005-10-20
申请号：US11105762
申请日：2005-04-14
申请人： Pradeep Iyer , Liviu Dinescu , Chia-Hsi Chu , Le Hong , Kai Li
发明人： Pradeep Iyer , Liviu Dinescu , Chia-Hsi Chu , Le Hong , Kai Li
IPC分类号： B32B9/04 , C08K7/10 , C09D7/12 , C09D183/06 , C09K3/18
CPC分类号： C09D7/1291 , C03C17/007 , C03C17/42 , C03C2217/477 , C03C2217/478 , C03C2217/71 , C03C2217/75 , C08J7/06 , C08K3/22 , C08K3/36 , C08K7/10 , C09D5/004 , C09D7/67 , C09D7/70 , C09D183/06 , Y10T428/259 , Y10T428/268 , Y10T428/31612 , Y10T428/31663 , C08L2666/54
摘要： The present invention relates to dew resistant coatings and articles having the dew resistant coating adhered thereto. The dew resistant coatings comprise elongate silica particles. These coating are useful on articles or surfaces used in outdoor applications and articles and surfaces used in moist indoor environments.
摘要翻译：本发明涉及耐露涂层和粘附有耐露涂层的制品。耐露涂层包括细长的二氧化硅颗粒。这些涂层可用于室外应用的物品或表面，潮湿的室内环境中使用的物品和表面。

2. 发明授权

US08713483B2 IC layout parsing for multiple masks 有权
标题翻译： IC布局解析多个掩码
公开(公告)号：US08713483B2
公开(公告)日：2014-04-29
申请号：US11758510
申请日：2007-06-05
申请人： Alexander Tritchkov , Emile Y. Sahouria , Le Hong
发明人： Alexander Tritchkov , Emile Y. Sahouria , Le Hong
IPC分类号： G06F17/50
CPC分类号： G03F1/70 , G03F1/26
摘要： A method for separating features in a target layout into different mask layouts for use in a photolithographic process. Features of a target layer are searched for features having a predefined shape. In one embodiment, portions of the feature having the predefined shape divided into two or more sub-features and at least one sub-feature are not considered when separating the features into two or more mask layouts. In another embodiment, features having a predefined shape are cut to form two or more sub-features and all features and sub-features are considered when separating the features of the target layout into the two or more mask layouts.
摘要翻译：用于将目标布局中的特征分离成用于光刻工艺的不同掩模布局的方法。搜索具有预定义形状的特征的目标层的特征。在一个实施例中，当将特征分成两个或更多个掩模布局时，不考虑具有划分为两个或更多个子特征和至少一个子特征的预定形状的特征的部分。在另一个实施例中，切割具有预定形状的特征以形成两个或更多个子特征，并且当将目标布局的特征分成两个或更多个掩模布局时，考虑所有特征和子特征。

3. 发明申请

US20130198698A1 EDGE FRAGMENT CORRELATION DETERMINATION FOR OPTICAL PROXIMITY CORRECTION 有权
标题翻译：用于光学近似校正的边缘片段相关确定
公开(公告)号：US20130198698A1
公开(公告)日：2013-08-01
申请号：US13363343
申请日：2012-01-31
申请人： Junjiang Lei , Le Hong , Mei Fang Shen , Yi Ning Pan
发明人： Junjiang Lei , Le Hong , Mei Fang Shen , Yi Ning Pan
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/68 , G03F1/70
摘要： Aspects of the invention relate to techniques for determining edge fragment correlation information. With various implementations of the invention, image intensity slope information for edge fragments in a layout design is determined. The image intensity slope information comprises information describing how image intensity for each of the edge fragments changes with its position. Image amplitude sensitivity information for the edge fragments is also determined. The image amplitude sensitivity information comprises information describing how image amplitude for each of the edge fragments changes with positions of neighboring edge fragments. Based on the image intensity slope information and the image amplitude sensitivity information, edge fragment correlation information for the edge fragments is determined. Using the edge fragment correlation information, the layout design may be processed by using, for example, OPC techniques. This OPC process may be performed on the whole layout design or problematic layout regions identified by a conventional OPC process.
摘要翻译：本发明的方面涉及用于确定边缘片段相关信息的技术。通过本发明的各种实现，确定了布局设计中的边缘片段的图像强度斜率信息。图像强度斜率信息包括描述每个边缘片段的图像强度如何随其位置而变化的信息。还确定了边缘片段的图像幅度敏感度信息。图像振幅敏感度信息包括描述每个边缘片段的图像幅度如何随着相邻边缘片段的位置而变化的信息。基于图像强度斜率信息和图像振幅敏感度信息，确定边缘片段的边缘片段相关信息。使用边缘片段相关信息，可以通过使用例如OPC技术来处理布局设计。该OPC处理可以在由常规OPC过程识别的整个布局设计或有问题的布局区域上执行。

4. 发明授权

US08539391B2 Edge fragment correlation determination for optical proximity correction 有权
标题翻译：光学邻近校正的边缘片段相关性确定
公开(公告)号：US08539391B2
公开(公告)日：2013-09-17
申请号：US13363343
申请日：2012-01-31
申请人： Junjiang Lei , Le Hong , Mei-Fang Shen , YiNing Pan
发明人： Junjiang Lei , Le Hong , Mei-Fang Shen , YiNing Pan
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/68 , G03F1/70
摘要： Aspects of the invention relate to techniques for determining edge fragment correlation information. With various implementations of the invention, image intensity slope information for edge fragments in a layout design is determined. The image intensity slope information comprises information describing how image intensity for each of the edge fragments changes with its position. Image amplitude sensitivity information for the edge fragments is also determined. The image amplitude sensitivity information comprises information describing how image amplitude for each of the edge fragments changes with positions of neighboring edge fragments. Based on the image intensity slope information and the image amplitude sensitivity information, edge fragment correlation information for the edge fragments is determined. Using the edge fragment correlation information, the layout design may be processed by using, for example, OPC techniques. This OPC process may be performed on the whole layout design or problematic layout regions identified by a conventional OPC process.
摘要翻译：本发明的方面涉及用于确定边缘片段相关信息的技术。通过本发明的各种实现，确定了布局设计中的边缘片段的图像强度斜率信息。图像强度斜率信息包括描述每个边缘片段的图像强度如何随其位置而变化的信息。还确定了边缘片段的图像幅度敏感度信息。图像振幅敏感度信息包括描述每个边缘片段的图像幅度如何随着相邻边缘片段的位置而变化的信息。基于图像强度斜率信息和图像振幅敏感度信息，确定边缘片段的边缘片段相关信息。使用边缘片段相关信息，可以通过使用例如OPC技术来处理布局设计。该OPC处理可以在由常规OPC过程识别的整个布局设计或有问题的布局区域上执行。

5. 发明申请

US20090077519A1 Displacement Aware Optical Proximity Correction For Microcircuit Layout Designs 审中-公开
标题翻译：用于微电路布局设计的位移感知光学近似校正
公开(公告)号：US20090077519A1
公开(公告)日：2009-03-19
申请号：US12212183
申请日：2008-09-17
申请人： Le Hong
发明人： Le Hong
IPC分类号： G06F17/50
CPC分类号： G06F17/5072 , G03F1/36
摘要： Techniques for adjusting edge segments within a layout design such that fewer iterations of an optical proximity correction process are required for covergence are provided. With various implementations, multiple iterations of an optical proximity correction process are performed on a portion of a layout design. The final displacement of various edge segments within a layout design may be employed to adjust the displacement of like edge segments within the same or alternate layout design, such that the optical proximity correction process may converge upon a suitable solution in fewer iterations.
摘要翻译：用于调整布局设计中的边缘段的技术，使得需要较少的光学邻近校正处理的迭代来进行覆盖。通过各种实现，对布局设计的一部分执行光学邻近校正处理的多次迭代。布局设计中的各种边缘段的最终位移可用于调整相同或替代布局设计中相似边缘段的位移，使得光学邻近校正过程可以以更少的迭代收敛于合适的解。

6. 发明申请

US20080307381A1 IC LAYOUT PARSING FOR MULTIPLE MASKS 有权
标题翻译：用于多个屏蔽的IC布局分配
公开(公告)号：US20080307381A1
公开(公告)日：2008-12-11
申请号：US11758510
申请日：2007-06-05
申请人： Alexander Tritchkov , Emile Y. Sahouria , Le Hong
发明人： Alexander Tritchkov , Emile Y. Sahouria , Le Hong
IPC分类号： G06F9/455
CPC分类号： G03F1/70 , G03F1/26
摘要： A method for separating features in a target layout into different mask layouts for use in a photolithographic process. Features of a target layer are searched for features having a predefined shape. In one embodiment, portions of the feature having the predefined shape divided into two or more sub-features and at least one sub-feature are not considered when separating the features into two or more mask layouts. In another embodiment, features having a predefined shape are cut to form two or more sub-features and all features and sub-features are considered when separating the features of the target layout into the two or more mask layouts.
摘要翻译：用于将目标布局中的特征分离成用于光刻工艺的不同掩模布局的方法。搜索具有预定义形状的特征的目标层的特征。在一个实施例中，当将特征分成两个或更多个掩模布局时，不考虑具有划分为两个或更多个子特征和至少一个子特征的预定形状的特征的部分。在另一个实施例中，切割具有预定形状的特征以形成两个或更多个子特征，并且当将目标布局的特征分成两个或更多个掩模布局时，考虑所有特征和子特征。

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