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1. 发明授权

US09000544B2 MEMS package structure 有权
标题翻译： MEMS封装结构
公开(公告)号：US09000544B2
公开(公告)日：2015-04-07
申请号：US14449583
申请日：2014-08-01
申请人： PixArt Imaging Inc.
发明人： Hsin-Hui Hsu , Sheng-Ta Lee , Chuan-Wei Wang
IPC分类号： H01L23/28 , B81B7/00 , B81C1/00
CPC分类号： B81B7/0058 , B81B7/0006 , B81B2201/0264 , B81C1/00246 , B81C1/00293 , B81C2203/0136 , B81C2203/0145 , B81C2203/0714 , B81C2203/0735
摘要： A MEMS package structure, including a substrate, an interconnecting structure, an upper metallic layer, a deposition element and a packaging element is provided. The interconnecting structure is disposed on the substrate. The MEMS structure is disposed on the substrate and within a first cavity. The upper metallic layer is disposed above the MEMS structure and the interconnecting structure, so as to form a second cavity located between the upper metallic layer and the interconnecting structure and communicates with the first cavity. The upper metallic layer has at least a first opening located above the interconnecting structure and at least a second opening located above the MEMS structure. Area of the first opening is greater than that of the second opening. The deposition element is disposed above the upper metallic layer to seal the second opening. The packaging element is disposed above the upper metallic layer to seal the first opening.
摘要翻译：提供了包括基板，互连结构，上金属层，沉积元件和封装元件的MEMS封装结构。互连结构设置在基板上。 MEMS结构设置在基板上并在第一腔内。上金属层设置在MEMS结构和互连结构之上，以便形成位于上金属层和互连结构之间的第二腔，并与第一腔连通。上金属层具有位于互连结构上方的至少第一开口和位于MEMS结构上方的至少第二开口。第一开口的面积大于第二开口的面积。沉积元件设置在上金属层上方以密封第二开口。包装元件设置在上金属层上方以密封第一开口。

2. 发明授权

US08692338B2 Micro electronic device having CMOS circuit and MEMS resonator formed on common silicon substrate 有权
标题翻译：具有形成在公共硅衬底上的CMOS电路和MEMS谐振器的微电子器件
公开(公告)号：US08692338B2
公开(公告)日：2014-04-08
申请号：US13673459
申请日：2012-11-09
申请人： PixArt Imaging Inc.
发明人： Chuan-Wei Wang , Sheng-Ta Lee , Hsin-Hui Hsu
IPC分类号： H01L29/84
CPC分类号： B81C1/00246 , B81B2201/0271 , B81C1/00182 , B81C2203/0714 , H03H3/0073
摘要： A method for fabricating a MEMS resonator is provided. A stacked main body including a silicon substrate, a plurality of metallic layers and an isolation layer is formed and has a first etching channel extending from the metallic layers into the silicon substrate. The isolation layer is filled in the first etching channel. The stacked main body also has a predetermined suspended portion. Subsequently, a portion of the isolation layer is removed so that a second etching channel is formed and the remained portion of the isolation layer covers an inner sidewall of the first etching channel. Afterwards, employing the isolation layer that covers the inner sidewall of the first etching channel as a mask, an isotropic etching process through the second etching channel is applied to the silicon substrate, thereby forming the MEMS resonator suspending above the silicon substrate. A micro electronic device is also provided.
摘要翻译：提供了一种用于制造MEMS谐振器的方法。形成包括硅衬底，多个金属层和隔离层的堆叠主体，并且具有从金属层延伸到硅衬底中的第一蚀刻通道。隔离层填充在第一蚀刻通道中。堆叠的主体还具有预定的悬挂部分。随后，去除隔离层的一部分，使得形成第二蚀刻通道，并且隔离层的剩余部分覆盖第一蚀刻通道的内侧壁。然后，使用覆盖第一蚀刻通道的内侧壁的隔离层作为掩模，将通过第二蚀刻通道的各向同性蚀刻工艺施加到硅衬底，从而形成悬浮在硅衬底上方的MEMS谐振器。还提供微电子设备。

3. 发明授权

US08679886B2 Microelectronic device and MEMS package structure and fabricating method thereof 有权
标题翻译：微电子器件和MEMS封装结构及其制造方法
公开(公告)号：US08679886B2
公开(公告)日：2014-03-25
申请号：US13727072
申请日：2012-12-26
申请人： PixArt Imaging Inc.
发明人： Hsin-Hui Hsu , Sheng-Ta Lee , Chuan-Wei Wang
IPC分类号： H01L21/00 , H01L29/84
CPC分类号： B81B3/0018 , B81C1/00015 , B81C1/00246 , B81C1/00333 , B81C2203/0145 , B81C2203/0714 , H01L21/768 , H01L27/1443 , H01L27/14632
摘要： A microelectronic device including a substrate, at least a semi-conductor element, an anti metal ion layer, a non-doping oxide layer and a MEMS structure is provided. The substrate has a CMOS circuit region and a MEMS region. The semi-conductor element is configured within the CMOS circuit region of the substrate. The anti metal ion layer is disposed within the CMOS circuit region of the substrate and covers the semi-conductor element. The non-doping oxide layer is disposed on the substrate within the MEMS region. The MEMS structure is partially suspended above the non-doping oxide layer. The present invention also provides a MEMS package structure and a fabricating method thereof.
摘要翻译：提供了包括基板，至少半导体元件，抗金属离子层，非掺杂氧化物层和MEMS结构的微电子器件。衬底具有CMOS电路区域和MEMS区域。半导体元件配置在衬底的CMOS电路区域内。反金属离子层设置在基板的CMOS电路区域内并覆盖半导体元件。非掺杂氧化物层被设置在MEMS区域内的衬底上。 MEMS结构部分悬浮在非掺杂氧化物层之上。本发明还提供了一种MEMS封装结构及其制造方法。

4. 发明申请

US20130069177A1 MICRO ELECTRONIC DEVICE 有权
标题翻译：微电子设备
公开(公告)号：US20130069177A1
公开(公告)日：2013-03-21
申请号：US13673459
申请日：2012-11-09
申请人： PixArt Imaging Inc.
发明人： Chuan-Wei WANG , Sheng-Ta Lee , Hsin-Hui Hsu
IPC分类号： H01L29/84
CPC分类号： B81C1/00246 , B81B2201/0271 , B81C1/00182 , B81C2203/0714 , H03H3/0073
摘要： A method for fabricating a MEMS resonator is provided. A stacked main body including a silicon substrate, a plurality of metallic layers and an isolation layer is formed and has a first etching channel extending from the metallic layers into the silicon substrate. The isolation layer is filled in the first etching channel. The stacked main body also has a predetermined suspended portion. Subsequently, a portion of the isolation layer is removed so that a second etching channel is formed and the remained portion of the isolation layer covers an inner sidewall of the first etching channel. Afterwards, employing the isolation layer that covers the inner sidewall of the first etching channel as a mask, an isotropic etching process through the second etching channel is applied to the silicon substrate, thereby forming the MEMS resonator suspending above the silicon substrate. A micro electronic device is also provided.
摘要翻译：提供了一种用于制造MEMS谐振器的方法。形成包括硅衬底，多个金属层和隔离层的堆叠主体，并且具有从金属层延伸到硅衬底中的第一蚀刻通道。隔离层填充在第一蚀刻通道中。堆叠的主体还具有预定的悬挂部分。随后，去除隔离层的一部分，使得形成第二蚀刻通道，并且隔离层的剩余部分覆盖第一蚀刻通道的内侧壁。然后，使用覆盖第一蚀刻通道的内侧壁的隔离层作为掩模，通过第二蚀刻通道的各向同性蚀刻工艺被施加到硅衬底，从而形成悬浮在硅衬底之上的MEMS谐振器。还提供微电子设备。

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