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1. 发明授权

US06387806B1 Filling an interconnect opening with different types of alloys to enhance interconnect reliability 有权
标题翻译：用不同类型的合金填充互连开口以增强互连的可靠性
公开(公告)号：US06387806B1
公开(公告)日：2002-05-14
申请号：US09655700
申请日：2000-09-06
申请人： Pin-Chin C. Wang , Christy M. Woo
发明人： Pin-Chin C. Wang , Christy M. Woo
IPC分类号： H01L2144
CPC分类号： H01L21/76849 , H01L21/76804 , H01L21/7684 , H01L21/76843 , H01L21/76867 , H01L21/76873 , H01L21/76877 , H01L21/76888 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An interconnect opening of an integrated circuit is filled with a conductive fill, such as copper, with the interconnect opening being within an insulating layer on a semiconductor wafer. A seed layer of a first alloy is deposited conformally onto sidewalls and a bottom wall of the interconnect opening. The first alloy is comprised of a first metal dopant in a bulk conductive material. The first metal dopant has a relatively high solid solubility in the bulk conductive material, and the first metal dopant has a concentration in the bulk conductive material of the seed layer that is lower than the solid solubility of the first metal dopant in the bulk conductive material. At least a portion of the conductive fill grown from the seed layer is comprised of a second alloy with a second metal dopant having a relatively low solid solubility in the bulk conductive material, and the second metal dopant has a concentration in the conductive fill that is higher than the solid solubility of the second metal dopant in the bulk conductive material. A thermal anneal is performed to form an additional encapsulating material that covers a top surface of the conductive fill, and the additional encapsulating material is formed from the second metal dopant diffusing out of the conductive fill during the thermal anneal. A layer of bulk passivation material is formed over the additional encapsulating material and the insulating layer. Use of the first alloy of the seed layer prevents agglomeration of the bulk conductive material of the seed layer at the sidewalls of the interconnect opening. The additional encapsulating material prevents drift of material from the conductive fill along the bottom surface of the layer of bulk passivation material and into the surrounding insulating layer.
摘要翻译：集成电路的互连开口填充有诸如铜的导电填料，其中互连开口位于半导体晶片上的绝缘层内。第一合金的籽晶层保形地沉积在互连开口的侧壁和底壁上。第一合金由块状导电材料中的第一金属掺杂剂构成。第一金属掺杂剂在体导电材料中具有相对高的固溶度，并且第一金属掺杂剂在晶种层的本体导电材料中的浓度低于第一金属掺杂剂在体导电材料中的固溶度。从种子层生长的至少一部分导电填料由具有在本体导电材料中具有相对低的固溶度的第二金属掺杂剂的第二合金构成，并且第二金属掺杂剂在导电填料中的浓度为高于第二金属掺杂剂在体导电材料中的固溶度。进行热退火以形成覆盖导电填料的顶表面的另外的封装材料，并且另外的封装材料由热退火期间从导电填料中扩散出的第二金属掺杂剂形成。在附加的封装材料和绝缘层上形成一层体积钝化材料。种子层的第一合金的使用防止种子层的体导电材料在互连开口的侧壁处的聚集。附加的封装材料防止材料沿着主体钝化材料层的底表面漂移到导电填料中并进入周围绝缘层。

2. 发明授权

US06358840B1 Forming and filling a recess in interconnect with alloy to minimize electromigration 有权
标题翻译：形成并填充与合金互连的凹槽以最小化电迁移
公开(公告)号：US06358840B1
公开(公告)日：2002-03-19
申请号：US09655699
申请日：2000-09-06
申请人： Pin-Chin C. Wang , Christy M. Woo
发明人： Pin-Chin C. Wang , Christy M. Woo
IPC分类号： H01L214763
CPC分类号： H01L21/76877 , H01L21/76886 , H01L21/76888 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In a method for filling an interconnect opening to form an interconnect of an integrated circuit, the interconnect opening is formed within an insulating layer. The interconnect opening is partially filled with a conductive material to form a recess within the conductive material toward a top of the interconnect opening, and the recess is disposed within the interconnect opening. An alloy is conformally deposited to fill the recess. Any conductive material and the alloy on the insulating layer are polished away such that the conductive material and the alloy are contained within the interconnect opening. A thermal anneal is then performed such that the conductive material and the alloy form into a conductive fill of a single grain structure within the interconnect opening. An additional encapsulating material is formed to cover a top surface of the conductive fill during the thermal anneal from the dopant of the alloy diffusing out of the alloy and along the top surface of the conductive fill. A bulk encapsulating layer is formed on top of the additional encapsulating material and on top of the insulating layer. The present invention may be used to particular advantage when the conductive material that partially fills the interconnect opening is copper, and when the alloy that fills the recess is a copper alloy with a dopant metal having a solid solubility in copper that is less than 0.1 atomic percent at room temperature and having a concentration in the copper alloy that is greater than the solid solubility in the copper alloy. In this manner, the additional encapsulating material on the top surface of the conductive fill prevents lateral drift of the conductive material comprising the conductive fill along a bottom surface of the bulk encapsulating layer.
摘要翻译：在用于填充互连开口以形成集成电路的互连的方法中，互连开口形成在绝缘层内。互连开口部分地填充有导电材料，以在导电材料内朝向互连开口的顶部形成凹部，并且凹槽设置在互连开口内。保形地沉积合金以填充凹部。任何导电材料和绝缘层上的合金被抛光，使得导电材料和合金被包含在互连开口内。然后进行热退火，使得导电材料和合金形成在互连开口内的单个晶粒结构的导电填料中。形成另外的封装材料以在从合金扩散出合金的掺杂剂和导电填料的顶表面进行热退火期间覆盖导电填料的顶表面。在附加的封装材料的顶部和绝缘层的顶部上形成大量封装层。当部分填充互连开口的导电材料是铜时，并且当填充凹槽的合金是具有小于0.1原子的在铜中具有固溶度的掺杂剂金属的铜合金时，本发明可以被用于特别的优点在铜合金中的浓度大于在铜合金中的固溶度。以这种方式，导电填料的顶表面上的另外的封装材料防止包含导电填料的导电材料沿大块封装层的底表面的横向偏移。

3. 发明授权

US06228759B1 Method of forming an alloy precipitate to surround interconnect to minimize electromigration 有权
标题翻译：形成合金沉淀物以围绕互连以最小化电迁移的方法
公开(公告)号：US06228759B1
公开(公告)日：2001-05-08
申请号：US09561622
申请日：2000-05-02
申请人： Pin-Chin C. Wang , Christy M. Woo , Sergey Lopatin
发明人： Pin-Chin C. Wang , Christy M. Woo , Sergey Lopatin
IPC分类号： H01L214763
CPC分类号： H01L21/76804 , H01L21/2855 , H01L21/76843 , H01L21/76849 , H01L21/76867 , H01L21/76873 , H01L21/76877 , H01L21/76886 , H01L2221/1089
摘要： An alloy precipitate is formed to surround a conductive fill within an interconnect opening, including especially a top surface of the conductive fill, to prevent drift of material from the conductive fill into the insulating layer that is surrounding the interconnect opening. An alloy material is deposited non-conformally such that the alloy material is deposited substantially only toward a top of the sidewalls of an interconnect opening and substantially only toward a center of the bottom wall of the interconnect opening. The interconnect opening is filled with the conductive material by growing the conductive material from a seed layer of the conductive material to form a conductive fill of the conductive material within the interconnect opening. The semiconductor wafer is heated to anneal the conductive fill within the interconnect opening such that the conductive fill forms into a substantially single grain structure. During the thermal anneal, reactant within the alloy material migrates along a top surface of the conductive fill and along a grain boundary of the conductive fill. An alloy precipitate is formed from a reaction between the reactant and the conductive material at the top surface and at the grain boundary of the conductive fill when the semiconductor wafer is then cooled down. The alloy precipitate at the top surface and at the grain boundary of the conductive fill prevents drift of the conductive material along the top surface and along the grain boundary of the conductive fill and into the insulating layer surrounding the interconnect opening.
摘要翻译：形成合金沉淀物以包围互连开口内的导电填料，特别包括导电填料的顶表面，以防止材料从导电填料漂移到围绕互连开口的绝缘层中。合金材料被非保形地沉积，使得合金材料基本上仅沉积在互连开口的侧壁的顶部并且基本上仅朝向互连开口的底壁的中心。通过从导电材料的种子层生长导电材料以在互连开口内形成导电材料的导电填充物，从而用导电材料填充互连开口。加热半导体晶片以使互连开口内的导电填充物退火，使得导电填料形成基本上单一的晶粒结构。在热退火期间，合金材料内的反应物沿着导电填料的顶表面沿导电填料的晶界迁移。当半导体晶片然后冷却时，在导电填料的顶表面和晶界处的反应物和导电材料之间的反应形成合金沉淀。在导电填料的顶表面和晶界处的合金沉淀物防止导电材料沿着顶表面和沿着导电填料的晶界并漂浮到围绕互连开口的绝缘层中。

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