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1. 发明授权

US07232734B2 Radiation emitting semiconductor device and method of manufacturing such a device 失效
公开(公告)号：US07232734B2
公开(公告)日：2007-06-19
申请号：US10534385
申请日：2003-10-31
申请人： Pierre Hermanus Woerlee , Gert Wim 'T Hooft , Jisk Holleman
发明人： Pierre Hermanus Woerlee , Gert Wim 'T Hooft , Jisk Holleman
IPC分类号： H01L21/331
CPC分类号： H01L33/34 , H01L27/15
摘要： Radiation-emitting semiconductor device and method of manufacturing such a device. The invention relates to a radiation-emitting semiconductor device (10) comprising a silicon-containing semiconductor body (1) and a substrate (2), which semiconductor body (1) comprises a lateral semiconductor diode positioned on an insulating layer (7) which separates the diode from the substrate (2). The lateral semiconductor diode comprises a first semiconductor region (3) of a first conductivity type and with a first doping concentration, a second semiconductor region (4) of the first or a second conductivity type opposite to the first conductivity type and with a second doping concentration which is lower than the first doping concentration, and a third semiconductor region (5) of the second conductivity type and with a third doping concentration which is higher than the second doping concentration, the first and the third region (3, 5) each being provided with a connection region (6, 8), and, during operation, radiation (S) being generated in the second region (4) due to recombination of charge carriers injected therein from the first and the third region (3, 5). According to the invention, the second semiconductor region (4) comprises a central part (4A) which is surrounded by a further part (4B) the bandgap of which is larger than the bandgap of the central part (4A). In this way, the radiation yield is increased in an indirect semiconductor material such as silicon in the central part (4A) as translation of the relatively long-living charge carriers towards a non-radiative recombination center is limited because of the barriers in the valence and conduction band in the further part (4B). Preferably, the bandgap in the further part (4B) is made larger in that the thickness of said part (4B) is so small that quantum size effects occur therein, while the central part (4A) has a thickness which is so large that such effects do not occur or substantially do not occur.

2. 发明申请

US20060043381A1 Radiation emitting semiconductor device and method of manufacturing such a device 失效
公开(公告)号：US20060043381A1
公开(公告)日：2006-03-02
申请号：US10534385
申请日：2003-10-31
申请人： Pierre Woerlee , Gert 'T Hooft , Jisk Holleman
发明人： Pierre Woerlee , Gert 'T Hooft , Jisk Holleman
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/34 , H01L27/15
摘要： Radiation-emitting semiconductor device and method of manufacturing such a device. The invention relates to a radiation-emitting semiconductor device (10) comprising a silicon-containing semiconductor body (1) and a substrate (2), which semiconductor body (1) comprises a lateral semiconductor diode positioned on an insulating layer (7) which separates the diode from the substrate (2). The lateral semiconductor diode comprises a first semiconductor region (3) of a first conductivity type and with a first doping concentration, a second semiconductor region (4) of the first or a second conductivity type opposite to the first conductivity type and with a second doping concentration which is lower than the first doping concentration, and a third semiconductor region (5) of the second conductivity type and with a third doping concentration which is higher than the second doping concentration, the first and the third region (3, 5) each being provided with a connection region (6, 8), and, during operation, radiation (S) being generated in the second region (4) due to recombination of charge carriers injected therein from the first and the third region (3, 5). According to the invention, the second semiconductor region (4) comprises a central part (4A) which is surrounded by a further part (4B) the bandgap of which is larger than the bandgap of the central part (4A). In this way, the radiation yield is increased in an indirect semiconductor material such as silicon in the central part (4A) as translation of the relatively long-living charge carriers towards a non-radiative recombination center is limited because of the barriers in the valence and conduction band in the further part (4B). Preferably, the bandgap in the further part (4B) is made larger in that the thickness of said part (4B) is so small that quantum size effects occur therein, while the central part (4A) has a thickness which is so large that such effects do not occur or substantially do not occur.

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