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    • 2. 发明申请
    • FIBER OPTIC GAS SENSOR
    • 光纤气体传感器
    • US20090129721A1
    • 2009-05-21
    • US11957746
    • 2007-12-17
    • Peng ChenMichael P. BuricPhilip R. SwinehartMokhtar S. Maklad
    • Peng ChenMichael P. BuricPhilip R. SwinehartMokhtar S. Maklad
    • G02B6/00
    • G01N21/7703G01F23/292G01N21/7746G01N2021/7709G01N2021/7723
    • A gas sensor includes an in-fiber resonant wavelength device provided in a fiber core at a first location. The fiber propagates a sensing light and a power light. A layer of a material is attached to the fiber at the first location. The material is able to absorb the gas at a temperature dependent gas absorption rate. The power light is used to heat the material and increases the gas absorption rate, thereby increasing sensor performance, especially at low temperatures. Further, a method is described of flash heating the gas sensor to absorb more of the gas, allowing the sensor to cool, thereby locking in the gas content of the sensor material, and taking the difference between the starting and ending resonant wavelengths as an indication of the concentration of the gas in the ambient atmosphere.
    • 气体传感器包括在第一位置处设置在光纤芯中的光纤内谐振波长装置。 光纤传播感应灯和电源灯。 材料层在第一位置附着在纤维上。 该材料能够以依赖于温度的气体吸收速率吸收气体。 功率灯用于加热材料并增加气体吸收率,从而提高传感器性能,特别是在低温下。 此外,描述了一种快速加热气体传感器以吸收更多气体的方法,允许传感器冷却,从而锁定传感器材料的气体含量,并且将起始和结束谐振波长之间的差作为指示 气体在大气中的浓度。
    • 3. 发明授权
    • Fiber optic gas sensor
    • 光纤气体传感器
    • US07792392B2
    • 2010-09-07
    • US11957746
    • 2007-12-17
    • Peng ChenMichael P. BuricPhilip R. SwinehartMokhtar S. Maklad
    • Peng ChenMichael P. BuricPhilip R. SwinehartMokhtar S. Maklad
    • G02B6/00G02B6/34
    • G01N21/7703G01F23/292G01N21/7746G01N2021/7709G01N2021/7723
    • A gas sensor includes an in-fiber resonant wavelength device provided in a fiber core at a first location. The fiber propagates a sensing light and a power light. A layer of a material is attached to the fiber at the first location. The material is able to absorb the gas at a temperature dependent gas absorption rate. The power light is used to heat the material and increases the gas absorption rate, thereby increasing sensor performance, especially at low temperatures. Further, a method is described of flash heating the gas sensor to absorb more of the gas, allowing the sensor to cool, thereby locking in the gas content of the sensor material, and taking the difference between the starting and ending resonant wavelengths as an indication of the concentration of the gas in the ambient atmosphere.
    • 气体传感器包括在第一位置处设置在光纤芯中的光纤内谐振波长装置。 光纤传播感应灯和电源灯。 材料层在第一位置附着在纤维上。 该材料能够以依赖于温度的气体吸收速率吸收气体。 功率灯用于加热材料并增加气体吸收率,从而提高传感器性能,特别是在低温下。 此外,描述了一种快速加热气体传感器以吸收更多气体的方法,允许传感器冷却,从而锁定传感器材料的气体含量,并且将起始和结束谐振波长之间的差作为指示 气体在大气中的浓度。
    • 5. 发明授权
    • Sensitive silicon pin diode fast neutron dosimeter
    • 敏感硅针二极管快中子剂量计
    • US4163240A
    • 1979-07-31
    • US779346
    • 1977-03-21
    • Philip R. SwinehartJohn M. Swartz
    • Philip R. SwinehartJohn M. Swartz
    • G01T3/08H01L27/14
    • G01T3/08
    • A method is disclosed of controlling and improving the sensitivity of silicon PIN diodes to dosage by fast neutrons. The method includes selecting a silicon mass of high resistivity n or p-type material having a relatively long minority carrier lifetime, in excess of 250 microseconds ( .mu. sec) providing n.sup.+ and p.sup.+ -type junctions, and arranging the mass to obtain a silicon PIN diode dosimeter having a preselected ratio of edge area to volume. A silicon PIN diode personnel dosimeter sensitive to a radiation level of absorbed dose as low as 0.1 rad has been produced; this dosimeter, in the range from about 0.1 rad to about 10 rads has a sensitivity of at least 10 mV/rad.
    • 公开了一种控制和提高硅PIN二极管对快中子剂量的灵敏度的方法。 该方法包括选择提供n +和p +型结的超过250微秒(μsec)的相对长的少量载流子寿命的高电阻率n或p型材料的硅质量块,并且排列该质量以获得硅PIN 二极管剂量计具有边缘面积与体积的预选比率。 已经产生对低达0.1rad的吸收剂量的辐射水平敏感的硅PIN二极管人员剂量计; 该剂量计在约0.1rad至约10rad的范围内具有至少10mV / rad的灵敏度。
    • 7. 发明授权
    • Metal oxy-nitride resistance films and methods of making the same
    • 金属氮化铝电阻膜及其制造方法
    • US5367285A
    • 1994-11-22
    • US25411
    • 1993-02-26
    • Philip R. SwinehartS. Scott CourtsD. Scott Holmes
    • Philip R. SwinehartS. Scott CourtsD. Scott Holmes
    • H01C1/14H01C7/00H01C7/04H01C17/08H01C1/012
    • H01C1/14H01C1/1413H01C17/08H01C7/006H01C7/041
    • Film resistors, for example, thin film thermistors having a negative temperature coefficient (NTCR) or near-zero TCR electronics resistors, are formed of an alloy of both an electrically insulating oxide and an electrically conducting nitride of at least one metal selected from titanium, tantalum, zirconium, hafnium and niobium. The electrically insulating oxide of the at least one metal is preferably present in the film sufficient to impart a negative temperature coefficient of resistance to thermistors which include the film as a component part. Preferably, the metal is reactive with both an oxygen-containing gas and nitrogen and is deposited onto a substrate by reactive sputtering in the presence of an inert gas (e.g., argon). By controlling the volume ratio of the reactive gasses (e.g., the volume percent of the oxygen-containing gas in the nitrogen gas) and/or flow rate of the reactive gasses with all other parameters constant, the range of temperature coefficient of resistance (TCR) can be "engineered" for a particular film resistor and can thus be usefully employed as thin film thermistors or near-zero TCR electronics resistors as desired.
    • 膜电阻器例如具有负温度系数(NTCR)或近零TCR电子电阻器的薄膜热敏电阻由电绝缘氧化物和至少一种金属的导电氮化物的合金形成,所述金属选自钛, 钽,锆,铪和铌。 所述至少一种金属的电绝缘氧化物优选存在于所述膜中足以赋予包括所述膜作为组分部分的热敏电阻的负温度系数。 优选地,金属与含氧气体和氮气都反应,并且在惰性气体(例如氩气)的存在下通过反应性溅射沉积到基底上。 通过控制反应气体的体积比(例如,氮气中含氧气体的体积百分比)和/或反应气体的流量与所有其它参数恒定,电阻温度系数(TCR)的范围 )可以针对特定的薄膜电阻器“工程化”,并且因此可以有用地用作薄膜热敏电阻或近零TCR电子电阻器。