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1. 发明授权

US5626772A Plasma addressed liquid crystal display with etched plasma channels 失效
标题翻译：带蚀刻等离子体通道的等离子体寻址液晶显示器
公开(公告)号：US5626772A
公开(公告)日：1997-05-06
申请号：US407536
申请日：1995-03-20
申请人： Petrus F. G. Bongaerts , Jacob Bruinink , Adrianus L. J. Burgmans , Henri R. J. R. Van Helleputte , Babar A. Khan , Karel E. Kuijk , Thomas S. Buzak , Kevin J. Ilcisin , Paul C. Martin
发明人： Petrus F. G. Bongaerts , Jacob Bruinink , Adrianus L. J. Burgmans , Henri R. J. R. Van Helleputte , Babar A. Khan , Karel E. Kuijk , Thomas S. Buzak , Kevin J. Ilcisin , Paul C. Martin
IPC分类号： G02F1/1333 , G02F1/133 , G09F9/35 , H01J11/02 , H01J17/48 , B44C1/22
CPC分类号： H01J17/485 , G02F1/13334 , Y10T428/24537 , Y10T428/24545
摘要： A flat display device preferably of the PALC type in which a fragile micro-sheet covering the plasma channels is replaced by a more robust plate having etched spaced elongated cavities configured in such a way that the top portions of the plate between side walls of each cavity defining a channel and facing the bottom plate are substantially flat. Preferably, the thickness of the glass top plate separating each plasma discharge from an electro-optic pixel is made substantially uniformly thin while the side walls reinforce and greatly increase the strength of the plate making it less prone to breakage during assembly of a display panel. Preferably, the glass plate is etched by means of a plasma etching process.
摘要翻译：优选为PALC类型的平板显示装置，其中覆盖等离子体通道的易碎微片被更坚固的板代替，该板具有蚀刻间隔开的细长空腔，其被构造成使得板的每个腔的侧壁之间的顶部限定通道并面向底板基本上是平的。优选地，将每个等离子体放电与电光像素分离的玻璃顶板的厚度基本均匀地变薄，同时侧壁加强并大大增加了板的强度，使得在组装显示面板期间不太容易断裂。优选地，通过等离子体蚀刻工艺蚀刻玻璃板。

2. 发明授权

US5596431A Plasma addressed liquid crystal display with etched electrodes 失效
标题翻译：带蚀刻电极的等离子体寻址液晶显示器
公开(公告)号：US5596431A
公开(公告)日：1997-01-21
申请号：US413052
申请日：1995-03-29
申请人： Petrus F. G. Bongaerts , Jacob Bruinink , Adrianus L. J. Burgmans , Henri R. J. R. Van Helleputte , Babar A. Khan , Karel E. Kuijk
发明人： Petrus F. G. Bongaerts , Jacob Bruinink , Adrianus L. J. Burgmans , Henri R. J. R. Van Helleputte , Babar A. Khan , Karel E. Kuijk
IPC分类号： G02F1/1333 , G02F1/133 , G02F1/1345 , G09F9/35 , H01J17/04 , H05K3/10 , G02F1/13 , G09G3/22
CPC分类号： G02F1/13334 , H05K3/107
摘要： A method for making an electrical device such as a PALC display device, and the electrical device or PALC device so made, in which a channel plate is provided with substantially vertical side walls, and the electrodes are formed by a self-aligning anisotropic plasma etching process which requires no photolithography. A similar process may be used to form a fanout region for individual contacting of channel electrodes. For improved contacting, preferably the fanout region is also channelled and an upstanding structure such as columns provided in the fanout channels so that the spaces between the columns and between the columns and the side walls are filled up with deposited metal that remains following the anisotropic etching process.
摘要翻译：一种用于制造诸如PALC显示装置的电气装置的方法，以及如此制造的电气装置或PALC装置，其中通道板设置有基本上垂直的侧壁，并且电极通过自对准各向异性等离子体蚀刻不需要光刻的工艺。可以使用类似的过程来形成用于沟道电极的单独接触的扇出区域。为了改善接触，优选地，扇出区也被引导，并且在扇出通道中设置直立结构，例如柱，使得柱之间和柱与侧壁之间的空间被填充有保留在各向异性蚀刻之后的沉积金属处理。

3. 发明授权

US6057895A Plasmas addressed liquid crystal display with deposited plasma channels with tapered edges 失效
标题翻译：等离子体用具有渐缩边缘的沉积等离子体通道寻址液晶显示器
公开(公告)号：US6057895A
公开(公告)日：2000-05-02
申请号：US535697
申请日：1995-09-28
申请人： Henri R. J. R. Van Helleputte , Jacob Bruinink , Adrianus L. J. Burgmans , Petrus F. G. Bongaerts , Babar A. Khan , Karel E. Kuijk
发明人： Henri R. J. R. Van Helleputte , Jacob Bruinink , Adrianus L. J. Burgmans , Petrus F. G. Bongaerts , Babar A. Khan , Karel E. Kuijk
IPC分类号： G02F1/1333 , G02F1/133 , G09F9/35
CPC分类号： G02F1/13334
摘要： A flat display device preferably of the PALC type in which the plasma channels are formed by depositing successive layers of electrically conductive and electrically insulating material on a substrate containing spaced walls of a resist material that are preferably structured with a negative slope to form in the space between the resist walls flanking channel walls comprising an electrode layer and rising above it a wall of insulating material with the electrode layer sides exposed to adjacent channels. Subsequently, the resist walls are removed by a lift-off process removing with it the layer deposits on the resist walls leaving behind the layer deposits between the resist walls. The remaining insulating walls are then covered with thin dielectric sheet-like member to form the plasma channels.
摘要翻译：优选为PALC型的平板显示装置，其中等离子体通道是通过在基片上沉积连续的导电和电绝缘材料层而形成的，该衬底包含抗蚀剂材料隔开的壁，该抗蚀剂材料优选由负斜面构成，以在该空间中形成在包括电极层的通道壁的侧面的抗蚀剂壁之间，在其上方上方具有电极层侧面暴露于相邻通道的绝缘材料壁。随后，通过剥离过程去除抗蚀剂壁，其上去除层，从而在抗蚀剂壁上沉积留下抗蚀剂壁之间的层沉积物。然后用薄的介电片状构件覆盖剩余的绝缘壁以形成等离子体通道。

4. 发明授权

US06517402B1 Plasma addressed liquid crystal display with etched glass spacers 失效
标题翻译：等离子体寻址液晶显示屏与蚀刻玻璃间隔
公开(公告)号：US06517402B1
公开(公告)日：2003-02-11
申请号：US09911054
申请日：2001-07-23
申请人： Babar A. Khan , Henri R. J. R. Van Helleputte , Adrianus L. J. Burgmans , Karel Elbert Kuijk , Petrus F. G. Bongaerts , Jacob Bruinink
发明人： Babar A. Khan , Henri R. J. R. Van Helleputte , Adrianus L. J. Burgmans , Karel Elbert Kuijk , Petrus F. G. Bongaerts , Jacob Bruinink
IPC分类号： H01J924
CPC分类号： G02F1/13334
摘要： A flat display device, preferably of the PALC type, in which the plasma channels are formed by etching laterally-spaced slots in a spacer plate, attaching a thin dielectric sheet over the etched spacer plate, and bonding the etched spacer plate to a transparent substrate such that each channel is formed by the portion of the substrate between flanking walls formed by the etched slots in the spacer plate, adjacent flanking walls in the spacer plate, and the overlying portion of the thin dielectric sheet. By positioning the flanking walls between channel electrode pairs, thus providing glass-to-glass interfaces, anodic bonding can be employed to assemble the three channel elements. Etching can be simplified by pre-attaching the unetched channel plate to the substrate or thin dielectric cover sheet with an intervening etch stop, and etching in situ using the-etch stop to prevent etching of the substrate or thin dielectric cover sheet. In a modification, the thin dielectric cover sheet as a separate element is substituted by depositing a continuous layer or multi-layers including an etch stop on the unetched spacer plate so that, following the etching, the deposited layer or multi-layer remains as the thin channel cover.
摘要翻译：优选为PALC型的平面显示装置，其中通过在间隔板中蚀刻横向间隔开的狭缝形成等离子体通道，将薄的电介质薄片附着在蚀刻的间隔板上，并将蚀刻的间隔板结合到透明基板使得每个通道由衬底的部分由间隔板中的蚀刻槽形成的侧壁之间，间隔板中相邻的侧壁和薄介电片的上部形成。通过将侧壁定位在通道电极对之间，从而提供玻璃 - 玻璃界面，可以采用阳极结合来组装三个通道元件。可以通过将未蚀刻的通道板预先附着到具有中间蚀刻停止的基底或薄介电覆盖片上，并使用蚀刻停止层原位蚀刻以防止蚀刻基底或薄的介电覆盖片来简化蚀刻。在一个修改中，通过在未蚀刻的间隔板上沉积包括蚀刻停止层的连续层或多层来替代作为单独元件的薄介电覆盖片，使得在蚀刻之后，沉积层或多层保持为薄通道盖。

5. 发明授权

US06579462B2 Plasma addressed liquid crystal display with glass spacers 失效
公开(公告)号：US06579462B2
公开(公告)日：2003-06-17
申请号：US09875535
申请日：2001-06-06
申请人： Babar A. Khan , Henri R. J. R. Van Helleputte , Adrianus L. J. Burgmans , Karel Elbert Kuijk , Petrus F. G. Bongaerts , Jacob Bruinink , Thomas Stanley Buzak , Kevin John Ilcisin , Paul Christopher Martin
发明人： Babar A. Khan , Henri R. J. R. Van Helleputte , Adrianus L. J. Burgmans , Karel Elbert Kuijk , Petrus F. G. Bongaerts , Jacob Bruinink , Thomas Stanley Buzak , Kevin John Ilcisin , Paul Christopher Martin
IPC分类号： H01J162
CPC分类号： G02F1/13334 , G02F1/13394
摘要： A flat display device, preferably of the PALC type, in which the plasma channels are formed by etching laterally-spaced slots in a spacer plate, attaching a thin dielectric sheet over the etched spacer plate, and bonding the etched spacer plate to a transparent substrate such that each channel is formed by the portion of the substrate between flanking walls formed by the etched slots in the spacer plate, adjacent flanking walls in the spacer plate, and the overlying portion of the thin dielectric sheet. In a modification, strengthening crossbars are formed between adjacent flanking walls.

6. 发明授权

US06433471B1 Plasma addressed liquid crystal display with glass spacers 失效
标题翻译：等离子体寻址液晶显示屏与玻璃间隔
公开(公告)号：US06433471B1
公开(公告)日：2002-08-13
申请号：US08588800
申请日：1996-01-19
申请人： Babar A. Khan , Henri R. J. R. Van Helleputte , Adrianus L. J. Burgmans , Karel Elbert Kuijk , Petrus F. G. Bongaerts , Jacob Bruinink , Thomas Stanley Buzak , Kevin John Ilcisin , Paul Christopher Martin
发明人： Babar A. Khan , Henri R. J. R. Van Helleputte , Adrianus L. J. Burgmans , Karel Elbert Kuijk , Petrus F. G. Bongaerts , Jacob Bruinink , Thomas Stanley Buzak , Kevin John Ilcisin , Paul Christopher Martin
IPC分类号： H01J162
CPC分类号： G02F1/13334 , G02F1/13394
摘要： A flat display device, preferably of the PALC type, in which the plasma channels are formed by etching laterally-spaced slots in a spacer plate, attaching a thin dielectric sheet over the etched spacer plate, and bonding the etched spacer plate to a transparent substrate such that each channel is formed by the portion of the substrate between flanking walls formed by the etched slots in the spacer plate, adjacent flanking walls in the spacer plate, and the overlying portion of the thin dielectric sheet. In a modification, strengthening crossbars are formed between adjacent flanking walls.
摘要翻译：优选为PALC型的平面显示装置，其中通过在间隔板中蚀刻横向间隔开的狭缝形成等离子体通道，将薄的电介质薄片附着在蚀刻的间隔板上，并将蚀刻的间隔板结合到透明基板使得每个通道由衬底的部分由间隔板中的蚀刻槽形成的侧壁之间，间隔板中相邻的侧壁和薄介电片的上部形成。在一个修改中，在相邻侧壁之间形成加强横梁。

7. 发明授权

US5804920A Plasma addressed liquid crystal display with etched glass spacers 失效
标题翻译：等离子体寻址液晶显示屏与蚀刻玻璃间隔
公开(公告)号：US5804920A
公开(公告)日：1998-09-08
申请号：US588799
申请日：1996-01-19
申请人： Babar A. Khan , Henri R. J. R. Van Helleputte , Adrianus L. J. Burgmans , Karel Elbert Kuijk , Petrus F. G. Bongaerts , Jacob Bruinink
发明人： Babar A. Khan , Henri R. J. R. Van Helleputte , Adrianus L. J. Burgmans , Karel Elbert Kuijk , Petrus F. G. Bongaerts , Jacob Bruinink
IPC分类号： G02F1/133 , H01J17/49
CPC分类号： G02F1/13334
摘要： A flat display device, preferably of the PALC type, in which the plasma channels are formed by etching laterally-spaced slots in a spacer plate, attaching a thin dielectric sheet over the etched spacer plate, and bonding the etched spacer plate to a transparent substrate such that each channel is formed by the portion of the substrate between flanking walls formed by the etched slots in the spacer plate, adjacent flanking walls in the spacer plate, and the overlying portion of the thin dielectric sheet. By positioning the flanking walls between channel electrode pairs, thus providing glass-to-glass interfaces, anodic bonding can be employed to assemble the three channel elements. Etching can be simplified by pre-attaching the unetched channel plate to the substrate or thin dielectric cover sheet with an intervening etch stop, and etching in situ using the etch stop to prevent etching of the substrate or thin dielectric cover sheet. In a modification, the thin dielectric cover sheet as a separate element is substituted by depositing a continuous layer or multi-layers including an etch stop on the unetched spacer plate so that, following the etching, the deposited layer or multi-layer remains as the thin channel cover.
摘要翻译：优选为PALC型的平面显示装置，其中通过在间隔板中蚀刻横向间隔开的狭缝形成等离子体通道，将薄的电介质薄片附着在蚀刻的间隔板上，并将蚀刻的间隔板结合到透明基板使得每个通道由衬底的部分由间隔板中的蚀刻槽形成的侧壁之间，间隔板中相邻的侧壁和薄介电片的上部形成。通过将侧壁定位在通道电极对之间，从而提供玻璃 - 玻璃界面，可以采用阳极结合来组装三个通道元件。可以通过将未蚀刻的通道板预先附着到具有中间蚀刻停止的基片或薄介电覆盖片并且使用蚀刻停止层原位蚀刻以防止蚀刻基片或薄介电覆盖片来简化蚀刻。在一个修改中，通过在未蚀刻的间隔板上沉积包括蚀刻停止层的连续层或多层来替代作为单独元件的薄介电覆盖片，使得在蚀刻之后，沉积层或多层保持为薄通道盖。

8. 发明授权

US06285127B1 Plasma addressed liquid crystal display with etched glass spacers 失效
标题翻译：等离子体寻址液晶显示屏与蚀刻玻璃间隔
公开(公告)号：US06285127B1
公开(公告)日：2001-09-04
申请号：US09096073
申请日：1998-06-11
申请人： Babar A. Khan , Henri R. J. R. Van Helleputte , Adrianus L. J. Burgmans , Karel Elbert Kuijk , Petrus F. G. Bongaerts , Jacob Bruinink
发明人： Babar A. Khan , Henri R. J. R. Van Helleputte , Adrianus L. J. Burgmans , Karel Elbert Kuijk , Petrus F. G. Bongaerts , Jacob Bruinink
IPC分类号： H01J1749
CPC分类号： G02F1/13334
摘要： A flat display device, preferably of the PALC type, in which the plasma channels are formed by etching laterally-spaced slots in a spacer plate, attaching a thin dielectric sheet over the etched spacer plate, and bonding the etched spacer plate to a transparent substrate such that each channel is formed by the portion of the substrate between flanking walls formed by the etched slots in the spacer plate, adjacent flanking walls in the spacer plate, and the overlying portion of the thin dielectric sheet. By positioning the flanking walls between channel electrode pairs, thus providing glass-to-glass interfaces, anodic bonding can be employed to assemble the three channel elements. Etching can be simplified by pre-attaching the unetched channel plate to the substrate or thin dielectric cover sheet with an intervening etch stop, and etching in situ using the etch stop to prevent etching of the substrate or thin dielectric cover sheet. In a modification, the thin dielectric cover sheet as a separate element is substituted by depositing a continuous layer or multi-layers including an etch stop on the unetched spacer plate so that, following the etching, the deposited layer or multi-layer remains as the thin channel cover.
摘要翻译：优选为PALC型的平面显示装置，其中通过在间隔板中蚀刻横向间隔开的狭缝形成等离子体通道，将薄的电介质薄片附着在蚀刻的间隔板上，并将蚀刻的间隔板结合到透明基板使得每个通道由衬底的部分由间隔板中的蚀刻槽形成的侧壁之间，间隔板中相邻的侧壁和薄介电片的上部形成。通过将侧壁定位在通道电极对之间，从而提供玻璃 - 玻璃界面，可以采用阳极结合来组装三个通道元件。可以通过将未蚀刻的通道板预先附着到具有中间蚀刻停止的基片或薄介电覆盖片并且使用蚀刻停止层原位蚀刻以防止蚀刻基片或薄介电覆盖片来简化蚀刻。在一个修改中，通过在未蚀刻的间隔板上沉积包括蚀刻停止层的连续层或多层来替代作为单独元件的薄介电覆盖片，使得在蚀刻之后，沉积层或多层保持为薄通道盖。

9. 发明授权

US08946045B2 Metal-insulator-metal (MIM) capacitor with deep trench (DT) structure and method in a silicon-on-insulator (SOI) 有权
标题翻译：具有深沟槽（DT）结构的金属绝缘体金属（MIM）电容器和绝缘体上硅（SOI）
公开(公告)号：US08946045B2
公开(公告)日：2015-02-03
申请号：US13457601
申请日：2012-04-27
申请人： John E. Barth, Jr. , Herbert L. Ho , Babar A. Khan , Kirk D. Peterson
发明人： John E. Barth, Jr. , Herbert L. Ho , Babar A. Khan , Kirk D. Peterson
IPC分类号： H01L21/02 , H01L21/8242 , H01L29/02
CPC分类号： H01L28/40 , H01L21/84 , H01L27/1203 , H01L28/91 , H01L29/66181 , H01L29/945
摘要： A structure forming a metal-insulator-metal (MIM) trench capacitor is disclosed. The structure comprises a multi-layer substrate having a metal layer and at least one dielectric layer. A trench is etched into the substrate, passing through the metal layer. The trench is lined with a metal material that is in contact with the metal layer, which comprises a first node of a capacitor. A dielectric material lines the metal material in the trench. The trench is filled with a conductor. The dielectric material that lines the metal material separates the conductor from the metal layer and the metal material lining the trench. The conductor comprises a second node of the capacitor.
摘要翻译：公开了形成金属 - 绝缘体 - 金属（MIM）沟槽电容器的结构。该结构包括具有金属层和至少一个电介质层的多层基底。沟槽被蚀刻到衬底中，穿过金属层。沟槽衬有与金属层接触的金属材料，金属层包括电容器的第一节点。电介质材料将沟槽中的金属材料排列。沟槽填充有导体。将金属材料排列的电介质材料将导体与金属层和衬套在沟槽上的金属材料分开。导体包括电容器的第二节点。

10. 发明申请

US20140021523A1 DRAM WITH DUAL LEVEL WORD LINES 有权
公开(公告)号：US20140021523A1
公开(公告)日：2014-01-23
申请号：US13551766
申请日：2012-07-18
申请人： Babar A. Khan , Effendi Leobandung
发明人： Babar A. Khan , Effendi Leobandung
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/10867 , H01L21/84 , H01L27/0207 , H01L27/10891 , H01L27/1203 , H01L29/945
摘要： A top semiconductor layer and conductive cap structures over deep trench capacitors are simultaneously patterned by an etch. Each patterned portion of the conductive cap structures constitutes a conductive cap structure, which laterally contacts a semiconductor material portion that is one of patterned remaining portions of the top semiconductor layer. Gate electrodes are formed as discrete structures that are not interconnected. After formation and planarization of a contact-level dielectric layer, passing gate lines are formed above the contact-level dielectric layer in a line level to provide electrical connections to the gate electrodes. Gate electrodes and passing gate lines that are electrically connected among one another constitute a gate line that is present across two levels.

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