专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07582585B2 Coating compositions 有权
标题翻译：涂料组合物
公开(公告)号：US07582585B2
公开(公告)日：2009-09-01
申请号：US11026179
申请日：2004-12-30
申请人： Peter Trefonas, III , Sungseo Cho , David L. Goff , J. Ioan Matthews , Hao Yun
发明人： Peter Trefonas, III , Sungseo Cho , David L. Goff , J. Ioan Matthews , Hao Yun
IPC分类号： B01J21/18
CPC分类号： G03F7/091
摘要： Coating compositions are provided that include a component that is a product of materials comprising an amine and an anhydride and/or an anhydride derivative. Compositions of the invention are particularly useful as an underlying antireflective coating composition (“ARC”) employed with an overcoated photoresist layer in the manufacture of microelectronic wafers and other electronic devices.
摘要翻译：提供涂料组合物，其包括作为包含胺和酸酐和/或酸酐衍生物的材料的产物的组分。本发明的组合物特别可用作在制造微电子晶片和其它电子器件时与外涂光致抗蚀剂层一起使用的底层抗反射涂料组合物（“ARC”）。

2. 发明授权

US4369247A Process of producing relief structures using polyamide ester resins 失效
标题翻译：使用聚酰胺酯树脂生产浮雕结构的方法
公开(公告)号：US4369247A
公开(公告)日：1983-01-18
申请号：US334163
申请日：1981-12-24
申请人： David L. Goff , Edward L. Yuan , Stephen Proskow
发明人： David L. Goff , Edward L. Yuan , Stephen Proskow
IPC分类号： C08F290/14 , G03F7/037 , H01L21/312 , G03C5/00
CPC分类号： C08F290/145 , G03F7/037 , H01L21/312
摘要： An improved process for forming relief structures on electrical devices such as capacitors, integrated circuits, printed circuits and semiconductors; a solution of a composition a polymeric heat resistant photopolymerizable composition of a polyamide ester resin containing photopolymerizable groups is applied to substrate such as a coated silicon wafer, which forms the base an electrical device, and is dried to form a film, the film is exposed to radiation through a pattern and photopolymerized; the unexposed and unpolymerized part of the film is dissolved off and the resulting relief structure is converted to a polyimide structure having a sharp definition and good mechanical, chemical and electrical properties; to reduce radiation exposure time and increase the rate of photopolymerization the following constituents are used in the composition:a radiation sensitive polymerizable polyfunctional acrylate compound and a photopolymerization initiator of an aromatic biimidazole.
摘要翻译：用于在诸如电容器，集成电路，印刷电路和半导体的电气装置上形成浮雕结构的改进方法; 将包含可光聚合基团的聚酰胺酯树脂的聚合物耐热可光聚合组合物的组合物溶液施加到基底上，例如形成基底的电子器件的被覆硅晶片，并干燥以形成膜，该膜暴露通过图案辐射和光聚合; 将未曝光和未聚合的薄膜部分溶解掉，将得到的浮雕结构转变成具有清晰清晰度和良好机械，化学和电学性能的聚酰亚胺结构; 为了减少辐射暴露时间并增加光聚合速率，在组合物中使用以下成分：辐射敏感的可聚合多官能丙烯酸酯化合物和芳族联咪唑的光聚合引发剂。

3. 发明授权

US5063115A Electronic device coated with a polyimide coating composition 失效
标题翻译：涂有聚酰亚胺涂层组合物的电子器件
公开(公告)号：US5063115A
公开(公告)日：1991-11-05
申请号：US538591
申请日：1990-06-15
申请人： Burt T. Merriman, Jr. , David L. Goff
发明人： Burt T. Merriman, Jr. , David L. Goff
IPC分类号： C08K5/544 , C08L79/08 , H01B3/30
CPC分类号： H01B3/306 , C08K5/544 , C08L79/08 , Y10T428/31663
摘要： A polyimide coating composition comprising an homogeneous liquid solution of (a) a polyimide or polyimide precursor, (b) a substituted silane compound and (c) aprotic solvent. The silane compound corresponds to the structure: ##STR1##
摘要翻译：一种聚酰亚胺涂料组合物，其包含（a）聚酰亚胺或聚酰亚胺前体的均匀液体溶液，（b）取代的硅烷化合物和（c）非质子溶剂。硅烷化合物对应于以下结构：

4. 发明授权

US4410612A Electrical device formed from polymeric heat resistant photopolymerizable composition 失效
标题翻译：由聚合物耐热光聚合组合物形成的电器件
公开(公告)号：US4410612A
公开(公告)日：1983-10-18
申请号：US334166
申请日：1981-12-24
申请人： David L. Goff , Edward L. Yuan , Stephen Proskow
发明人： David L. Goff , Edward L. Yuan , Stephen Proskow
IPC分类号： C08F290/14 , G03F7/037 , H01L21/312 , G03C5/00
CPC分类号： C08F290/145 , G03F7/037 , H01L21/312 , Y10S428/901
摘要： An electrical device formed from a polymeric heat resistant photopolymerizable composition of a polyamide ester, resin containing photopolymerizable groups which forms a relief structures on electrical devices such as capacitors, integrated circuits, printed circuits, multilayer circuits or semiconductors; a solution of the composition is applied to a substrate such as a coated silicon wafer, dried to form a film, the film is exposed to radiation through a pattern and photopolymerized; the unexposed and unpolymerized part of the film is dissolved off and the resulting relief structure is converted to a polyimide structure with sharp definition and has good mechanical, chemical and electrical properties; to reduce radiation exposure time and increase the rate of photopolymerization the following constituents are used in the composition: a radiation sensitive polymerizable polyfunctional acrylate compound and a photopolymerization initiator of an aromatic biimidazole.
摘要翻译：由聚酰胺酯的聚合物耐热可光聚合组合物形成的电气装置，包含在诸如电容器，集成电路，印刷电路，多层电路或半导体的电气装置上形成浮雕结构的可光聚合基团的树脂; 将组合物的溶液施加到诸如涂覆的硅晶片的基材上，干燥以形成膜，通过图案将膜暴露于辐射并进行光聚合; 将未曝光和未聚合的薄膜部分溶解掉，得到的浮雕结构转变为具有清晰清晰度的聚酰亚胺结构，具有良好的机械，化学和电学性能; 为了减少辐射暴露时间并增加光聚合速率，在组合物中使用以下成分：辐射敏感的可聚合多官能丙烯酸酯化合物和芳族联咪唑的光聚合引发剂。

5. 发明授权

US4416973A Radiation-sensitive polyimide precursor composition derived from a diaryl fluoro compound 失效
标题翻译：衍生自二芳基氟化合物的辐射敏感聚酰亚胺前体组合物
公开(公告)号：US4416973A
公开(公告)日：1983-11-22
申请号：US427415
申请日：1982-09-29
申请人： David L. Goff
发明人： David L. Goff
IPC分类号： C08F290/14 , C08G73/10 , C08L79/08 , G03F7/037 , G03C1/68
CPC分类号： G03F7/037 , C08F290/14 , C08G73/1039 , C08L79/08 , Y10S430/117 , Y10S430/12
摘要： A radiation-sensitive polyimide precursor composition comprises a polymer of the formula ##STR1## wherein n is a positive integer corresponding to the number of units in the polymer and is sufficiently large to provide the polymer with a number average molecular weight of about 1500-15,000 as determined by vapor pressure osmometry, and wherein for any particular unit in the polymer:.fwdarw.denotes isomerism; R.sup.1 is a divalent aromatic, aliphatic or cycloaliphatic radical containing at least 2 carbon atoms; R.sup.2 and R.sup.3 are selected from the group consisting of a hydrogen radical and any organic radical containing a photopolymerizable olefinic double bond; and R.sup.4 and R.sup.5 are selected from the group consisting of perfluoro and perhalofluoro aliphatic hydrocarbons having 1 to 8 carbons.
摘要翻译：辐射敏感的聚酰亚胺前体组合物包含下式的聚合物，其中n是对应于聚合物中单元数的正整数，并且足够大以提供具有约1500-15,000的数均分子量的聚合物如通过蒸气压渗透压测定法确定的，并且其中对于聚合物中的任何特定单元： - >表示异构体; R1是含有至少2个碳原子的二价芳族，脂族或脂环族基团; R2和R3选自氢基团和含有可光聚合的烯属双键的任何有机基团; 并且R 4和R 5选自具有1至8个碳的全氟和全氟氟脂族烃。

6. 发明授权

US4329419A Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors 失效
标题翻译：用于半导体和电容器的聚合物耐热可光聚合组合物
公开(公告)号：US4329419A
公开(公告)日：1982-05-11
申请号：US183648
申请日：1980-09-03
申请人： David L. Goff , Edward L. Yuan , Stephen Proskow
发明人： David L. Goff , Edward L. Yuan , Stephen Proskow
IPC分类号： C08F2/00 , C08F2/50 , C08F2/54 , C08F290/00 , C08F290/14 , C08F299/00 , C08F299/02 , C08K5/10 , C08K5/3447 , C09D4/00 , C09D155/00 , C09D179/08 , G03C5/00 , G03F7/004 , G03F7/037 , G03F7/038 , H01B3/30 , H01L21/027 , H01L21/312 , G03C1/68
CPC分类号： H01L21/312 , C08F290/145 , G03F7/037
摘要： A polymeric heat resistant photopolymerizable composition of a polyamide ester resin containing photopolymerizable groups useful for forming relief structures on electrical devices such as capacitors, integrated circuits and semiconductors; a solution of the composition is applied to a substrate such as a coated silicon wafer which forms an electrical device, dried to form a film, the film is exposed to radiation through a pattern and photopolymerized; the unexposed and unpolymerized part of the film is dissolved off and the resulting relief structure is baked to form a polyimide structure with sharp definition and has good mechanical, chemical and electrical properties; to reduce radiation exposure time and increase the rate of photopolymerization the following constituents are used in the composition:a radiation sensitive polymerizable polyfunctional acrylate compound and a photopolymerization initiator of an aromatic biimidazole.
摘要翻译：含有可用于在诸如电容器，集成电路和半导体的电气装置上形成浮雕结构的可光聚合基团的聚酰胺酯树脂的聚合物耐热可光聚合组合物; 将组合物的溶液施加到形成电子装置的基底如涂覆的硅晶片上，干燥以形成膜，通过图案将膜暴露于辐射并进行光聚合; 将未曝光和未聚合的部分的膜溶解掉，并将所得到的浮雕结构烘烤以形成具有清晰清晰度的具有良好机械，化学和电学性能的聚酰亚胺结构; 为了减少辐射暴露时间并增加光聚合速率，在组合物中使用以下成分：辐射敏感的可聚合多官能丙烯酸酯化合物和芳族联咪唑的光聚合引发剂。

7. 发明授权

US4551522A Process for making photopolymerizable aromatic polyamic acid derivatives 失效
标题翻译：制备光聚合芳族聚酰胺酸衍生物的方法
公开(公告)号：US4551522A
公开(公告)日：1985-11-05
申请号：US727809
申请日：1985-04-26
申请人： Michael Fryd , David L. Goff
发明人： Michael Fryd , David L. Goff
IPC分类号： C07C233/75 , C07C67/00 , C07C231/00 , C07C231/02 , C07C231/12 , C08G73/00 , C08G73/10 , G03F7/038 , C08G73/12
CPC分类号： C08G73/1028 , C08G73/1025 , C08G73/1064 , C08G73/1067 , C08G73/1071 , C08G73/1085 , C08G73/1089 , G03F7/0387
摘要： A process for the synthesis of the photosensitive polyamic acid derivatives which are polyimide precursors, comprising the sequential steps:(1) Partially derivatizing an aromatic dianhydride with a reactive monomer containing a photosensitive moiety;(2) Condensation polymerizing the partially derivatized aromatic dianhydride with aromatic diamine to form polyamic acid;(3) Isoimidization of the polyamic acid;(4) Condensation of the polyisoimide to polyamic acid derivative by reaction with additional reactive monomer; and(5) Separation of the polyamic acid derivative.
摘要翻译：一种用于合成作为聚酰亚胺前体的光敏聚酰胺酸衍生物的方法，包括以下顺序步骤：（1）用含有感光部分的反应性单体部分衍生芳族二酐; （2）将部分衍生的芳族二酐与芳族二胺缩合形成聚酰胺酸; （3）聚酰胺酸的异亚胺化; （4）通过与另外的反应性单体反应，聚异酰亚胺与聚酰胺酸衍生物的缩合; 和（5）聚酰胺酸衍生物的分离。

8. 发明授权

US4454220A Electrical device containing a radiation-sensitive polyimide precursor composition derived from a diaryl fluoro compound 失效
标题翻译：含有衍生自二芳基氟化合物的辐射敏感性聚酰亚胺前体组合物的电气装置
公开(公告)号：US4454220A
公开(公告)日：1984-06-12
申请号：US427416
申请日：1982-09-29
申请人： David L. Goff
发明人： David L. Goff
IPC分类号： C08F290/14 , C08G73/10 , C08L79/08 , G03F7/037 , G03C5/00
CPC分类号： C08F290/14 , C08G73/1039 , C08L79/08 , G03F7/037 , Y10S430/117 , Y10S430/12
摘要： An electrical device coated with a polymerized polyimide structure resulting from a radiation-sensitive polyimide precursor composition which comprises a polymer of the formula ##STR1## wherein n is a positive integer corresponding to the number of units in the polymer and is sufficiently large to provide the polymer with a number average molecular weight of about 1500-15,000 as determined by vapor pressure osmometry, and wherein for any particular unit in the polymer:.fwdarw.denotes isomerism; R.sup.1 is a divalent aromatic, aliphatic or cycloaliphatic radical containing at least 2 carbon atoms; R.sup.2 and R.sup.3 are selected from the group consisting of a hydrogen radical and any organic radical containing a photopolymerizable olefinic double bond; and R.sup.4 and R.sup.5 are selected from the group consisting of perfluoro and perhalofluoro aliphatic hydrocarbons having 1 to 8 carbons.
摘要翻译：涂覆有由辐射敏感的聚酰亚胺前体组合物产生的聚合的聚酰亚胺结构的电气装置，其包含下式的聚合物：其中n是对应于聚合物中的单元数目的正整数，并且足够大以提供通过蒸气压渗透压测定的数均分子量为约1500-15,000的聚合物，并且其中对于聚合物中的任何特定单元： - >表示异构体; R1是含有至少2个碳原子的二价芳族，脂族或脂环族基团; R2和R3选自氢基团和含有可光聚合的烯属双键的任何有机基团; 并且R 4和R 5选自具有1至8个碳的全氟和全氟氟脂族烃。

9. 发明授权

US4430418A Radiation-sensitive polyimide precursor composition derived from a diaryl fluoronated diamine compound 失效
标题翻译：衍生自二芳基氟化二胺化合物的辐射敏感聚酰亚胺前体组合物
公开(公告)号：US4430418A
公开(公告)日：1984-02-07
申请号：US430856
申请日：1982-09-30
申请人： David L. Goff
发明人： David L. Goff
IPC分类号： C08F290/14 , C08G73/10 , C08L79/08 , G03F7/037 , G03C1/68
CPC分类号： G03F7/037 , C08F290/14 , C08G73/1039 , C08L79/08 , Y10S430/117 , Y10S430/12
摘要： A radiation-sensitive polyimide precursor composition, comprising a polymer of the formula ##STR1## wherein n is a positive integer corresponding to the number of units in the polymer and is sufficiently large to provide the polymer with a number average molecular weight of about 1500-15,000 as determined by vapor pressure osmometry, and wherein for any particular unit in the polymer:.fwdarw.denotes isomerism;R.sup.1 is a tetravalent aromatic non-halogen containing organic radical containing at least one ring of six carbon atoms, said ring characterized by benzenoid unsaturation, the four carbonyl groups being attached directly to separate carbon atoms in a ring of the R.sup.1 radical;R.sup.2 and R.sup.3 are selected from the group consisting of a hydrogen radical and any organic radical containing a photopolymerizable olefinic double bond, at least one of R.sup.2 and R.sup.3 being said organic radical;R.sup.4 and R.sup.5 are selected from the group consisting of perfluoro and perhalofluoro aliphatic hydrocarbons having 1 to 8 carbons; and A and A' are selected from the group consisting of H, Cl, Br, and NO.sub.2.
摘要翻译：一种辐射敏感的聚酰亚胺前体组合物，其包含下式的聚合物，其中n是对应于聚合物中单元数的正整数，并且足够大以提供数均分子量为约1500〜通过蒸气压渗透测定法测定，其中对于聚合物中的任何特定单位： - >表示异构体; R1是含有至少一个具有6个碳原子的环的四价芳族不含卤素的有机基团，所述环的特征在于苯不饱和键，四个羰基直接连接在R1基团的环上分开的碳原子; R2和R3选自氢基团和含有可光聚合的烯属双键的任何有机基团，R 2和R 3中的至少一个是所述有机基团; R4和R5选自具有1至8个碳的全氟和全氟氟脂族烃; A和A'选自H，Cl，Br和NO 2。

10. 发明授权

US4414312A Photopolymerizable polyamide ester resin compositions containing an oxygen scavenger 失效
标题翻译：含有除氧剂的可光聚合的聚酰胺酯树脂组合物
公开(公告)号：US4414312A
公开(公告)日：1983-11-08
申请号：US334164
申请日：1981-12-24
申请人： David L. Goff , Edward L. Yuan , Stephen Proskow
发明人： David L. Goff , Edward L. Yuan , Stephen Proskow
IPC分类号： C08F290/14 , G03F7/037 , H01L21/312 , G03C1/68
CPC分类号： H01L21/312 , C08F290/145 , G03F7/037
摘要： A polymeric heat resistant photopolymerizable composition of a polyamide ester resin containing photopolymerizable groups useful for forming relief structures on electrical devices such as capacitors, integrated circuits, printed circuits and semiconductors; a solution of the composition is applied to a substrate such as a coated silicon wafer which is the base for an electrical device, dried to form a film, the film is exposed to radiation through a pattern and photopolymerized; the unexposed and unpolymerized part of the film is dissolved off and the resulting relief structure is converted to a polyimide structure with sharp definition and has good mechanical, chemical and electrical properties; to reduce radiation exposure time and increase the rate of photopolymerization the following constituents are used in the composition:radiation sensitive polymerizable polyfunctional acrylate compound and photopolymerization initiators containing hydrogen donor initiator and aromatic biimidazole, and an oxygen scavenger.
摘要翻译：含有用于在诸如电容器，集成电路，印刷电路和半导体的电气装置上形成浮雕结构的可光聚合基团的聚酰胺酯树脂的聚合物耐热可光聚合组合物; 将组合物的溶液施加到诸如作为电气装置的基底的涂覆硅晶片的基板上，干燥以形成膜，通过图案将膜暴露于辐射并进行光聚合; 将未曝光和未聚合的薄膜部分溶解掉，得到的浮雕结构转变为具有清晰清晰度的聚酰亚胺结构，具有良好的机械，化学和电学性能; 为了减少辐射暴露时间并增加光聚合速率，组合物中使用以下组分：辐射敏感的可聚合多官能丙烯酸酯化合物和含氢供体引发剂和芳族联咪唑的光聚合引发剂和除氧剂。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式