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1. 发明授权

US07022968B1 Optical sensor that measures the light output by the combustion chamber of an internal combustion engine 有权
标题翻译：测量内燃机燃烧室的光输出的光学传感器
公开(公告)号：US07022968B1
公开(公告)日：2006-04-04
申请号：US10690181
申请日：2003-10-21
申请人： Peter J. Hopper , Philipp Lindorfer , Michael Mian , Robert Drury
发明人： Peter J. Hopper , Philipp Lindorfer , Michael Mian , Robert Drury
IPC分类号： H01J40/14
CPC分类号： H01T13/48 , G01M15/10
摘要： An optical sensor provides information about the burn of the fuel mixture in the combustion chamber of an internal combustion engine as well as the timing and waveform of the spark that ignites the fuel mixture in the combustion chamber. The optical sensor can be implemented as a stand-alone device, or incorporated into a spark plug.
摘要翻译：光学传感器提供关于内燃机的燃烧室中的燃料混合物的燃烧的信息以及点燃燃烧室中的燃料混合物的火花的时序和波形。光学传感器可以被实现为独立装置，或并入火花塞中。

2. 发明授权

US06958194B1 Imager with improved sensitivity 失效
标题翻译：成像仪灵敏度提高
公开(公告)号：US06958194B1
公开(公告)日：2005-10-25
申请号：US10689779
申请日：2003-10-21
申请人： Peter J. Hopper , Philipp Lindorfer , Michael Mian , Robert Drury
发明人： Peter J. Hopper , Philipp Lindorfer , Michael Mian , Robert Drury
IPC分类号： B32B9/00 , H01L27/146 , H01L31/00
CPC分类号： H01L27/14647 , Y10T428/12528 , Y10T428/12674
摘要： An imaging cell reduces recombination losses and increases sensitivity by forming a low resistance lateral path with a silicon germanium layer of a conductivity type that is sandwiched between silicon layers of the same conductivity type. The silicon germanium layer also provides a quantum well from which photo-generated electrons find it difficult to escape, thereby providing a barrier that reduces cross-talk.
摘要翻译：成像单元通过用夹在相同导电类型的硅层之间的导电类型的硅锗层形成低电阻横向路径来降低复合损耗并增加灵敏度。硅锗层还提供了一个量子阱，光电子发现它难以逃逸，从而提供了减少串扰的屏障。

3. 发明授权

US07057174B1 High-speed photon detector and method of forming the detector 有权
标题翻译：高速光子探测器及形成探测器的方法
公开(公告)号：US07057174B1
公开(公告)日：2006-06-06
申请号：US10355904
申请日：2003-01-30
申请人： Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko , Michael Mian
发明人： Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko , Michael Mian
IPC分类号： H01L31/00
CPC分类号： H01L31/08
摘要： A photon detector capable of detecting gigahertz frequency optical signals utilizes a layer of photonic material that is formed adjacent to the coil of an inductor. When a pulsed light source is applied to the layer of photonic material, the photonic material generates eddy currents that alter the magnetic flux of the inductor. The signals can then be detected by detecting the change in the magnetic flux.
摘要翻译：能够检测千兆赫兹光信号的光子检测器利用与电感线圈相邻形成的光子材料层。当脉冲光源被施加到光子材料层时，光子材料产生改变电感器的磁通量的涡流。然后可以通过检测磁通量的变化来检测信号。

4. 发明授权

US07218555B2 Imaging cell that has a long integration period and method of operating the imaging cell 有权
标题翻译：成像细胞具有长的积分期和操作成像细胞的方法
公开(公告)号：US07218555B2
公开(公告)日：2007-05-15
申请号：US11242094
申请日：2005-10-03
申请人： Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko , Robert Drury
发明人： Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko , Robert Drury
IPC分类号： G11C11/34 , H01L29/788
CPC分类号： H01L27/11526 , H01L27/115 , H01L27/11531 , H01L27/14603 , H01L27/14609
摘要： The integration period of an imaging cell, or the time that an imaging cell is exposed to light energy, is substantially increased by utilizing a single-poly, electrically-programmable, read-only-memory (EPROM) structure to capture the light energy. Photogenerated electrons are formed in the channel region of the EPROM structure from the light energy. The photogenerated electrons are then accelerated into having ionizing collisions which, in turn, leads to electrons being injected onto the floating gate of the EPROM structure at a rate that is proportionate to the number of photons captured by the channel region.
摘要翻译：成像单元的积分周期或成像单元暴露于光能的时间通过利用单聚电子可编程只读存储器（EPROM）结构捕获光能而大大增加。光能从EPROM结构的沟道区形成光电子。光生成的电子然后被加速成具有电离碰撞，其进而导致电子以与通道区域捕获的光子数成正比的速率注入到EPROM结构的浮动栅极上。

5. 发明授权

US06972457B1 Imaging cell that has a long integration period and method of operating the imaging cell 有权
标题翻译：成像细胞具有长的积分期和操作成像细胞的方法
公开(公告)号：US06972457B1
公开(公告)日：2005-12-06
申请号：US10821286
申请日：2004-04-09
申请人： Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko , Robert Drury
发明人： Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko , Robert Drury
IPC分类号： H01L21/8247 , H01L27/115 , H01L27/146 , H01L29/76 , H01L29/788
CPC分类号： H01L27/11526 , H01L27/115 , H01L27/11531 , H01L27/14603 , H01L27/14609
摘要： The integration period of an imaging cell, or the time that an imaging cell is exposed to light energy, is substantially increased by utilizing a single-poly, electrically-programmable, read-only-memory (EPROM) structure to capture the light energy. Photogenerated electrons are formed in the channel region of the EPROM structure from the light energy. The photogenerated electrons are then accelerated into having ionizing collisions which, in turn, leads to electrons being injected onto the floating gate of the EPROM structure at a rate that is proportionate to the number of photons captured by the channel region.
摘要翻译：成像单元的积分周期或成像单元暴露于光能的时间通过利用单聚电子可编程只读存储器（EPROM）结构捕获光能而大大增加。光能从EPROM结构的沟道区形成光电子。光生成的电子然后被加速成具有电离碰撞，其进而导致电子以与通道区域捕获的光子数成正比的速率注入到EPROM结构的浮动栅极上。

6. 发明授权

US07202538B1 Ultra low leakage MOSFET transistor 有权
标题翻译：超低漏电MOSFET晶体管
公开(公告)号：US07202538B1
公开(公告)日：2007-04-10
申请号：US10647604
申请日：2003-08-25
申请人： Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko , Robert Drury
发明人： Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko , Robert Drury
IPC分类号： H01L29/94
CPC分类号： H01L29/4238 , H01L21/28123 , H01L21/823481 , H01L21/823878 , H01L29/0692
摘要： A MOSFET transistor structure is formed in a substrate of semiconductor material having a first conductivity type. The MOSFET transistor structure includes an active region that is surrounded by a perimeter isolation dielectric material formed in the substrate to define a continuous sidewall interface between the sidewall dielectric material and the active region. Spaced-apart source and drain regions are formed in the active region and are also spaced-apart from the sidewall interface. A conductive gate electrode that is separated from the substrate channel region by intervening gate dielectric material includes a first portion that extends over the substrate channel region and a second portion that extends continuously over the entire sidewall interface between the isolation dielectric material and the active region. Thus, an enclosed ring is maintained around the entire composite perimeter, thereby completely avoiding regions of high trap density and, thus, preventing any current path for gate induced drain leakage (GIDL) to occur.
摘要翻译：在具有第一导电类型的半导体材料的衬底中形成MOSFET晶体管结构。 MOSFET晶体管结构包括由形成在衬底中的周边隔离电介质材料围绕以限定侧壁电介质材料和有源区域之间的连续侧壁界面的有源区域。间隔开的源极和漏极区域形成在有源区中并且也与侧壁界面间隔开。通过介入栅极电介质材料与衬底沟道区分离的导电栅电极包括在衬底沟道区上延伸的第一部分和在隔离电介质材料与有源区之间的整个侧壁界面上连续延伸的第二部分。因此，围绕整个复合材料周边保持封闭的环，从而完全避免高陷阱密度的区域，并因此防止发生栅极引起漏极泄漏（GIDL）的任何电流路径。

7. 发明授权

US06940133B1 Integrated trim structure utilizing dynamic doping 有权
标题翻译：采用动态掺杂的集成微调结构
公开(公告)号：US06940133B1
公开(公告)日：2005-09-06
申请号：US10818039
申请日：2004-04-05
申请人： Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko , Robert Drury
发明人： Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko , Robert Drury
IPC分类号： H01C17/26 , H01L21/02 , H01L29/76 , H01L29/8605 , H01L29/94
CPC分类号： H01L28/20 , H01C17/267 , H01L29/8605
摘要： An integrated circuit trim structure includes a dopant source, a target trim element formed in proximity to the dopant source, and a conductive heating element. The heater element is formed in proximity to the dopant source and includes first and second terminals and a trapezoid shaped region formed between the first and second terminals. As predefined current pulse is applied to the first terminal to promote current flow between the first and second terminals, a local heat source is created at a predefined location within the trapezoid shaped region and in proximity to the dopant source such that dopant flows from the dopant source into the target trim element to change the conductive characteristics of the target trim element.
摘要翻译：集成电路微调结构包括掺杂剂源，在掺杂剂源附近形成的目标微调元件和导电加热元件。加热器元件形成在掺杂剂源附近，并且包括形成在第一和第二端子之间的第一和第二端子和梯形区域。当预定义的电流脉冲施加到第一端子以促进第一和第二端子之间的电流流动时，在梯形区域内的预定位置处并且在掺杂剂源附近产生局部热源，使得掺杂剂从掺杂剂源到目标装饰元件以改变目标装饰元件的导电特性。

8. 发明授权

US06852562B1 Low-cost method of forming a color imager 有权
标题翻译：低成本的彩色成像方法
公开(公告)号：US06852562B1
公开(公告)日：2005-02-08
申请号：US10728612
申请日：2003-12-05
申请人： Peter J. Hopper , Robert Drury , Philipp Lindorfer , Vladislav Vashchenko
发明人： Peter J. Hopper , Robert Drury , Philipp Lindorfer , Vladislav Vashchenko
IPC分类号： H01L21/00 , H01L27/146
CPC分类号： H01L27/14643 , H01L27/1462 , H01L27/14687
摘要： A color imager, which has a plurality of photodiodes, utilizes a layer of metal that is formed over the photodiodes. The metal layer has a plurality of different sized openings that lie vertically over the photodiodes to physically diffract, and thereby filter, the incident light that strikes the color imager.
摘要翻译：具有多个光电二极管的彩色成像器利用形成在光电二极管上的金属层。金属层具有多个不同尺寸的开口，其垂直地位于光电二极管上以物理衍射，从而过滤入射到彩色成像器的入射光。

9. 发明申请

US20120326260A1 PHOTODIODE THAT INCORPORATES A CHARGE BALANCED SET OF ALTERNATING N AND P DOPED SEMICONDUCTOR REGIONS 审中-公开
标题翻译：包含N和P多个半导体区域的充电平衡组的光电
公开(公告)号：US20120326260A1
公开(公告)日：2012-12-27
申请号：US13165050
申请日：2011-06-21
申请人： William French , Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko
发明人： William French , Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko
IPC分类号： H01L31/06 , H01L31/18
CPC分类号： H01L31/103 , H01L31/03529 , Y02E10/50
摘要： A photodiode comprises a first terminal formed in a surface of a semiconductor substrate; a second terminal formed in the substrate surface and spaced apart from the first terminal; and a plurality of adjacent alternating N-type and P-type diffusion regions formed in the substrate surface between the first terminal and the second terminal.
摘要翻译：光电二极管包括形成在半导体衬底的表面中的第一端子; 形成在所述基板表面中并与所述第一端子间隔开的第二端子; 以及形成在第一端子和第二端子之间的衬底表面中的多个相邻的交替的N型和P型扩散区域。

10. 发明授权

US08324603B2 Galvanic isolation that incorporates a transformer with an optical link and that can be integrated onto a single semiconductor substrate 有权
标题翻译：具有变压器和光学链路并且可以集成到单个半导体衬底上的电隔离
公开(公告)号：US08324603B2
公开(公告)日：2012-12-04
申请号：US12862136
申请日：2010-08-24
申请人： William French , Peter J. Hopper , Vladislav Vashchenko , Philipp Lindorfer
发明人： William French , Peter J. Hopper , Vladislav Vashchenko , Philipp Lindorfer
IPC分类号： G02B27/00 , H01L29/00
CPC分类号： G02B6/43 , G02B6/12004 , G02B6/136 , Y10T29/49155
摘要： Methods and structures provide galvanic isolation for electrical systems using a wide oxide filled trench, and that allows power across the system divide with a transformer, and that transmits data at a high baud rate using an optical link. The system solution allows the integration of all of these elements onto a single semiconductor substrate in contrast to currently available galvanic isolation systems that require multiple individual silicon die that are connected by wire bonds and are relatively slow.
摘要翻译：方法和结构为使用宽氧化物填充沟槽的电气系统提供电流隔离，并且允许跨系统的功率与变压器分压，并且使用光链路以高波特率传输数据。与目前可用的电隔离系统相比，该系统解决方案允许将所有这些元件集成到单个半导体衬底上，该电隔离系统需要通过引线键连接并且相对较慢的多个单独的硅管芯。

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