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    • 9. 发明授权
    • Deep trench based far subcollector reachthrough
    • 深沟渠远极子集线器达到
    • US07691734B2
    • 2010-04-06
    • US11680637
    • 2007-03-01
    • Bradley A. OrnerRobert M. RasselDavid C. SheridanSteven H. Voldman
    • Bradley A. OrnerRobert M. RasselDavid C. SheridanSteven H. Voldman
    • H01L21/04
    • H01L21/763H01L29/0821H01L29/66272H01L29/732
    • A far subcollector, or a buried doped semiconductor layer located at a depth that exceeds the range of conventional ion implantation, is formed by ion implantation of dopants into a region of an initial semiconductor substrate followed by an epitaxial growth of semiconductor material. A reachthrough region to the far subcollector is formed by outdiffusing a dopant from a doped material layer deposited in the at least one deep trench that adjoins the far subcollector. The reachthrough region may be formed surrounding the at least one deep trench or only on one side of the at least one deep trench. If the inside of the at least one trench is electrically connected to the reachthrough region, a metal contact may be formed on the doped fill material within the at least one trench. If not, a metal contact is formed on a secondary reachthrough region that contacts the reachthrough region.
    • 通过将掺杂剂离子注入到初始半导体衬底的区域中,随后半导体材料的外延生长,形成位于超过常规离子注入范围的深度的远的子集电极或掩埋掺杂半导体层。 通过从沉积在邻接远子集电极的至少一个深沟槽中的掺杂材料层向外扩散掺杂剂形成远子集电极的到达区域。 穿通区域可形成为围绕至少一个深沟槽或仅在至少一个深沟槽的一侧上。 如果至少一个沟槽的内部电连接到通孔区域,则可以在至少一个沟槽内的掺杂填充材料上形成金属接触。 如果不是,则在与接触区域接触的次级通过区域上形成金属接触。
    • 10. 发明申请
    • DEEP TRENCH BASED FAR SUBCOLLECTOR REACHTHROUGH
    • 深度基础的FAR SUBCOLLECTOR REACHTHROUGH
    • US20080211064A1
    • 2008-09-04
    • US11680637
    • 2007-03-01
    • Bradley A. OrnerRobert M. RasselDavid C. SheridanSteven H. Voldman
    • Bradley A. OrnerRobert M. RasselDavid C. SheridanSteven H. Voldman
    • H01L29/06H01L21/425
    • H01L21/763H01L29/0821H01L29/66272H01L29/732
    • A far subcollector, or a buried doped semiconductor layer located at a depth that exceeds the range of conventional ion implantation, is formed by ion implantation of dopants into a region of an initial semiconductor substrate followed by an epitaxial growth of semiconductor material. A reachthrough region to the far subcollector is formed by outdiffusing a dopant from a doped material layer deposited in the at least one deep trench that adjoins the far subcollector. The reachthrough region may be formed surrounding the at least one deep trench or only on one side of the at least one deep trench. If the inside of the at least one trench is electrically connected to the reachthrough region, a metal contact may be formed on the doped fill material within the at least one trench. If not, a metal contact is formed on a secondary reachthrough region that contacts the reachthrough region.
    • 通过将掺杂剂离子注入到初始半导体衬底的区域中,随后半导体材料的外延生长,形成位于超过常规离子注入范围的深度的远的子集电极或掩埋掺杂半导体层。 通过从沉积在邻接远子集电极的至少一个深沟槽中的掺杂材料层向外扩散掺杂剂形成远子集电极的到达区域。 穿通区可以形成在至少一个深沟槽周围,或仅在至少一个深沟槽的一侧上。 如果至少一个沟槽的内部电连接到通孔区域,则可以在至少一个沟槽内的掺杂填充材料上形成金属接触。 如果不是,则在与接触区域接触的次级通过区域上形成金属接触。