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1. 发明授权

US5380475A Process for manufacturing an oxidation-stable component on a CFC base, particularly for space travel 失效
标题翻译：在CFC基础上制造氧化稳定组分的方法，特别是用于太空旅行
公开(公告)号：US5380475A
公开(公告)日：1995-01-10
申请号：US973376
申请日：1992-11-09
申请人： Peter Goedtke , Ernst Blenninger , Manfred Lechner , Ulrich Papenburg , Peter Sindlhauser , Ulrich Goetz
发明人： Peter Goedtke , Ernst Blenninger , Manfred Lechner , Ulrich Papenburg , Peter Sindlhauser , Ulrich Goetz
IPC分类号： C04B35/573 , F02K9/97 , C04B35/52 , C08K7/06
CPC分类号： C04B35/573 , F02K9/974 , Y10T428/30
摘要： For the manufacturing of an oxidation-stable component that can withstand temperature changes for space travel, a solid CFC-body with a density of from 0.1 to 0.8 g/cm.sup.3, which has nondirectional short fibers, is made from short carbon fibers and a hardenable resin binder. From the solid CFC-body, a CFC-blank having the dimensions of the component to be manufactured is prepared by means of turning or other material cutting. The CFC-blank is infiltrated with pyrolytic carbon to a density of no more than 1.0 g/cm.sup.3 and then with metallic silicon so that its density amounts to more than 2.0 g/cm.sup.3. A portion of the metallic silicon is reacted with the pyrolytic carbon to form silicon carbide. The proportion of the unreacted metallic silicon which remains in the component after this reaction amounts to at least 15 percent by weight.
摘要翻译：对于可以承受空间行进温度变化的氧化稳定组分的制造，具有非定向短纤维的密度为0.1至0.8g / cm 3的固体CFC体由短碳纤维和可硬化的树脂粘合剂。通过固体CFC体，通过车削或其他材料切割来制备具有要制造的部件的尺寸的CFC坯料。 CFC-坯料用热解碳渗透至不超过1.0g / cm 3的密度，然后用金属硅渗透，使其密度达到2.0g / cm3以上。一部分金属硅与热解碳反应形成碳化硅。在该反应后残留在组分中的未反应的金属硅的比例等于至少15重量％。

2. 发明授权

US5505805A Method for the production of reflectors 失效
标题翻译：反射器的生产方法
公开(公告)号：US5505805A
公开(公告)日：1996-04-09
申请号：US25145
申请日：1993-03-02
申请人： Ulrich Papenburg , Peter Goedtke , Ernst Blenninger
发明人： Ulrich Papenburg , Peter Goedtke , Ernst Blenninger
IPC分类号： C04B37/00 , G02B5/08 , G02B7/182 , G02B7/183 , B32B31/06 , B32B31/12 , B32B31/26
CPC分类号： G02B7/183 , C04B35/63476 , C04B35/6455 , C04B37/001 , C04B37/003 , C04B37/008 , G02B5/08 , C04B2235/6562 , C04B2235/6567 , C04B2235/658 , C04B2237/083 , C04B2237/121 , C04B2237/125 , C04B2237/16 , C04B2237/30 , C04B2237/365 , C04B2237/52 , C04B2237/60 , C04B2237/61 , C04B2237/64 , C04B2237/70 , C04B2237/704 , C04B2237/72 , C04B2237/76 , Y10S359/90 , Y10T156/10
摘要： For the production of lightweight reflectors or mirror structures, metallic silicon of sufficient thickness is applied to a CFC or CMC substrate preform structure having the dimensions of the component to be produced by a heat treatment process, in particular at temperatures between 1300.degree. C. and 1600.degree. C. and in a vacuum or in a protective atmosphere. In this way, reflectors or mirror structures are formed directly. It is possible to work at temperatures of 300.degree.-600.degree. C. when the silicon is applied in the form of wafers which are joined to the substrate preform by way a zone of a melt eutectic incorporating a nonferrous metal. Preferably the nonferrous metal is gold.
摘要翻译：为了生产轻型反射镜或镜面结构，将具有足够厚度的金属硅施加到具有通过热处理工艺制造的部件的尺寸的CFC或CMC基材预成型件结构，特别是在1300℃和 1600℃，并在真空或保护气氛中。以这种方式，直接形成反射镜或反射镜结构。当硅以晶片的形式施加时，可以在300-600℃的温度下工作，所述晶片通过掺入有色金属的熔融共晶区连接到基底预制件。优选地，有色金属是金。

3. 发明授权

US5825565A Reflector 失效
标题翻译：反射器
公开(公告)号：US5825565A
公开(公告)日：1998-10-20
申请号：US653334
申请日：1996-05-24
申请人： Ulrich Papenburg , Ernst Blenninger , Peter Goedtke , Michael Deyerler
发明人： Ulrich Papenburg , Ernst Blenninger , Peter Goedtke , Michael Deyerler
IPC分类号： C04B37/00 , C04B41/50 , C04B41/52 , C04B41/85 , C04B41/89 , G02B5/08 , G02B7/182 , G02B7/183 , G02B1/10
CPC分类号： G02B7/183 , C04B35/65 , C04B37/001 , C04B41/5096 , C04B41/52 , C04B41/85 , C04B41/89 , G02B5/08 , C04B2237/34 , C04B2237/365 , C04B2237/407 , C04B2237/52 , C04B2237/586 , Y10S359/90 , Y10T156/1064
摘要： In order to produce lightweight mirror structures or other reflecting components, preformed silicon elements of sufficient wall thickness are applied to a CFC or CMC substrate structure with the dimensions of the component to be produced, at a temperature in the range 1300.degree. C. and 1600.degree. C. either in vacuum or in a protective atmosphere. In this way a mirror structure or reflector is formed directly. It is possible to work at temperatures in the range of 300.degree. C. to 600.degree. C. when the silicon is applied in the form of a preform such as a wafer, which is joined to the substrate by way of a zone of a melt eutectic incorporating a nonferrous metal, which is preferably gold. The surfaces are subsequently coated.
摘要翻译：为了生产轻质镜面结构或其他反射部件，将具有足够壁厚的预制硅元件在1300℃和1600℃的温度下施加到要生产的部件的尺寸的CFC或CMC基板结构在真空中或在保护气氛中。以这种方式直接形成镜面结构或反射镜。当硅以诸如晶片的预成型体的形式施加时，可以在300℃至600℃的温度下工作，该晶片通过熔融区连接到基底共晶合并有色金属，优选为金。随后涂覆表面。

4. 发明授权

US5565052A Method for the production of a reflector 失效
标题翻译：反射器的制造方法
公开(公告)号：US5565052A
公开(公告)日：1996-10-15
申请号：US300633
申请日：1994-09-02
申请人： Ulrich Papenburg , Ernst Blenninger , Peter Goedtke , Michael Deyerler
发明人： Ulrich Papenburg , Ernst Blenninger , Peter Goedtke , Michael Deyerler
IPC分类号： C04B37/00 , C04B41/50 , C04B41/52 , C04B41/85 , C04B41/89 , G02B5/08 , G02B7/182 , G02B7/183 , B32B31/12 , B32B31/26
CPC分类号： G02B7/183 , C04B35/65 , C04B37/001 , C04B41/5096 , C04B41/52 , C04B41/85 , C04B41/89 , G02B5/08 , C04B2237/34 , C04B2237/365 , C04B2237/407 , C04B2237/52 , C04B2237/586 , Y10S359/90 , Y10T156/1064
摘要： In order to produce lightweight mirror structures or other reflecting components, preformed silicon elements of sufficient wall thickness are applied to a CFC or CMC substrate structure with the dimensions of the component to be produced, at a temperature in the range 1300.degree. C. and 1600.degree. C. either in vacuum or in a protective atmosphere. In this way a mirror structure or reflector is formed directly. It is possible to work at temperatures in the range of 300.degree. C. to 600.degree. C. when the silicon is applied in the form of a preform such as a wafer, which is joined to the substrate by way of a zone of a melt eutectic incorporating a nonferrous metal, which is preferably gold. The surfaces are subsequently coated.
摘要翻译：为了生产轻质镜面结构或其他反射部件，将具有足够壁厚的预制硅元件在1300℃和1600℃的温度下施加到要生产的部件的尺寸的CFC或CMC基板结构在真空中或在保护气氛中。以这种方式直接形成镜面结构或反射镜。当硅以诸如晶片的预成型体的形式施加时，可以在300℃至600℃的温度下工作，该晶片通过熔融区连接到基底共晶合并有色金属，优选为金。随后涂覆表面。

5. 发明授权

US4473517A Method of producing an expanded insulating layer for propellant charges 失效
标题翻译：制造用于推进剂装料的膨胀绝缘层的方法
公开(公告)号：US4473517A
公开(公告)日：1984-09-25
申请号：US455488
申请日：1983-01-04
申请人： Peter Goedtke , Heinz G. Langer
发明人： Peter Goedtke , Heinz G. Langer
IPC分类号： F02K9/34 , B29C27/10
CPC分类号： F02K9/346
摘要： An insulating layer is effected between a propellant charge in the interior walls of a combustion chamber of a rocket engine by applying an expandable plastic to the inside of the combustion chamber housing between the housing and the outer circumferential wall of the propellant charge then expanding the plastic. Advantageously the combustion chamber is preheated before introducing the charge and the expandable plastic into the combustion chamber. Preferably the ratio of the layer of the thickness of the expandable plastic to the spacing between the propellant charge and the walls of the combustion chamber ranges from 1 to 11/2; 1 to 1 and 1 to 3. The expandable plastic is advantageously a polybutadiene.
摘要翻译：在火箭发动机的燃烧室的内壁中的推进剂装料之间，通过将可膨胀塑料施加到壳体与推进剂装料的外周壁之间的燃烧室壳体的内部，然后使塑料膨胀而实现绝缘层。有利地，在将电荷和可膨胀塑料引入燃烧室之前，将燃烧室预热。优选地，可膨胀塑料的厚度层与推进剂装料与燃烧室壁之间的间隔的比例范围为1至11/2; 1至1和1至3.可膨胀塑料有利地是聚丁二烯。

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