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1. 发明申请

US20110162706A1 PASSIVATED POLYSILICON EMITTER SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：被分解的多晶硅发射体太阳能电池及其制造方法
公开(公告)号：US20110162706A1
公开(公告)日：2011-07-07
申请号：US12983846
申请日：2011-01-03
申请人： Peter G. Borden , Li Xu , Tristan R. Holtam , Vinay K. Shah
发明人： Peter G. Borden , Li Xu , Tristan R. Holtam , Vinay K. Shah
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/03682 , H01L31/03921 , H01L31/068 , H01L31/182 , H01L31/1864 , H01L31/1868 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a polysilicon emitter solar cell with a passivating layer over its polysilicon emitter layer is disclosed. The method includes steps of preparing a substrate, forming a first polysilicon layer over the substrate, and forming a first passivating layer over the first polysilicon layer. Another embodiment of the present invention discloses a solar cell apparatus. The solar cell apparatus includes a substrate, a first polysilicon layer over the substrate, and a first passivating layer on first polysilicon layer.
摘要翻译：公开了一种在其多晶硅发射极层上制造具有钝化层的多晶硅发射极太阳能电池的方法。该方法包括制备衬底，在衬底上形成第一多晶硅层，以及在第一多晶硅层上形成第一钝化层的步骤。本发明的另一实施例公开了一种太阳能电池装置。太阳能电池装置包括衬底，衬底上的第一多晶硅层和第一多晶硅层上的第一钝化层。

2. 发明申请

US20090111209A1 METHOD FOR PATTERNING MO LAYER IN A PHOTOVOLTAIC DEVICE COMPRISING CIGS MATERIAL USING AN ETCH PROCESS 审中-公开
标题翻译：在使用蚀刻工艺的包含CIGS材料的光伏器件中绘制薄膜层的方法
公开(公告)号：US20090111209A1
公开(公告)日：2009-04-30
申请号：US12346750
申请日：2008-12-30
申请人： Timothy WEIDMAN , Li Xu , Peter G. Borden
发明人： Timothy WEIDMAN , Li Xu , Peter G. Borden
IPC分类号： H01L21/06
CPC分类号： H01L31/0749 , H01L31/03923 , H01L31/0465 , H01L31/18 , Y02E10/541
摘要： A processing method described herein provides a method of patterning a MoSe2 and/or Mo material, for example a layer of such material(s) in a thin-film structure. According to one aspect, the invention relates to etch solutions that can effectively etch through Mo and/or MoSe2. According to another aspect, the invention relates to etching such materials when such materials are processed with other materials in a thin film photovoltaic device. According to other aspects, the invention includes a process of etching Mo and/or MoSe2 with selectivity to a layer of CIGS material in an overall process flow. According to still further aspects, the invention relates to Mo and/or MoSe2 etch solutions that are useful in an overall photolithographic process for forming a photovoltaic cell and/or interconnects and test structures in a photovoltaic device.
摘要翻译：本文所述的处理方法提供了一种图案化MoSe 2和/或Mo材料的方法，例如薄膜结构中的这种材料层。根据一个方面，本发明涉及可以有效地通过Mo和/或MoSe2蚀刻的蚀刻溶液。根据另一方面，本发明涉及当这种材料在薄膜光伏器件中用其它材料加工时蚀刻这种材料。根据其它方面，本发明包括在整个工艺流程中对具有选择性的CIGS材料的Mo和/或MoSe2进行蚀刻的工艺。根据另外的方面，本发明涉及可用于在光伏器件中形成光伏电池和/或互连和测试结构的整体光刻工艺中的Mo和/或MoSe2蚀刻溶液。

3. 发明申请

US20090314341A1 SIMPLIFIED BACK CONTACT FOR POLYSILICON EMITTER SOLAR CELLS 审中-公开
标题翻译：简单的背面接触多晶硅发射太阳能电池
公开(公告)号：US20090314341A1
公开(公告)日：2009-12-24
申请号：US12421570
申请日：2009-04-09
申请人： Peter G. BORDEN , Li Xu
发明人： Peter G. BORDEN , Li Xu
IPC分类号： H01L31/02 , H01L21/20 , H01L21/302
CPC分类号： H01L31/0682 , H01L31/022441 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to forming contacts for solar cells. According to one aspect, an interdigitated back contact (IBC) cell design according to the invention requires only one patterning step to form the interdigitated junctions (vs. two for alternate designs). According to another aspect, the back contact structure includes a silicon nitride or a nitrided tunnel dielectric. This acts as a diffusion barrier, so that the properties of the tunnel dielectric can be maintained during a high temperature process step, and boron diffusion through the tunnel dielectric can be prevented. According to another aspect, the process for forming the back contacts requires no deep drive-in diffusions.
摘要翻译：本发明涉及形成太阳能电池的触点。根据一个方面，根据本发明的叉指式背接触（IBC）电池设计仅需要一个构图步骤来形成叉指结点（相对于替代设计而言）。根据另一方面，背接触结构包括氮化硅或氮化隧道电介质。这充当扩散阻挡层，使得可以在高温工艺步骤期间保持隧道电介质的性质，并且可以防止通过隧道电介质的硼扩散。根据另一方面，用于形成背部接触的方法不需要深度驱动扩散。

4. 发明授权

US07547569B2 Method for patterning Mo layer in a photovoltaic device comprising CIGS material using an etch process 失效
标题翻译：使用蚀刻工艺在包括CIGS材料的光伏器件中图案化Mo层的方法
公开(公告)号：US07547569B2
公开(公告)日：2009-06-16
申请号：US11562573
申请日：2006-11-22
申请人： Timothy Weidman , Li Xu , Peter G. Borden
发明人： Timothy Weidman , Li Xu , Peter G. Borden
IPC分类号： H01L21/00 , H01L21/06
CPC分类号： H01L31/0749 , H01L31/03923 , H01L31/0465 , H01L31/18 , Y02E10/541
摘要： A processing method described herein provides a method of patterning a MoSe2 and/or Mo material, for example a layer of such material(s) in a thin-film structure. According to one aspect, the invention relates to etch solutions that can effectively etch through Mo and/or MoSe2. According to another aspect, the invention relates to etching such materials when such materials are processed with other materials in a thin film photovoltaic device. According to other aspects, the invention includes a process of etching Mo and/or MoSe2 with selectivity to a layer of CIGS material in an overall process flow. According to still further aspects, the invention relates to Mo and/or MoSe2 etch solutions that are useful in an overall photolithographic process for forming a photovoltaic cell and/or interconnects and test structures in a photovoltaic device.
摘要翻译：本文所述的处理方法提供了一种图案化MoSe 2和/或Mo材料的方法，例如薄膜结构中的这种材料层。根据一个方面，本发明涉及可以有效地通过Mo和/或MoSe2蚀刻的蚀刻溶液。根据另一方面，本发明涉及当这种材料在薄膜光伏器件中用其它材料加工时蚀刻这种材料。根据其它方面，本发明包括在整个工艺流程中对具有选择性的CIGS材料的Mo和/或MoSe2进行蚀刻的工艺。根据另外的方面，本发明涉及可用于在光伏器件中形成光伏电池和/或互连和测试结构的整体光刻工艺中的Mo和/或MoSe2蚀刻溶液。

5. 发明申请

US20080119005A1 METHOD FOR PATTERNING MO LAYER IN A PHOTOVOLTAIC DEVICE COMPRISING CIGS MATERIAL USING AN ETCH PROCESS 失效
标题翻译：在使用蚀刻工艺的包含CIGS材料的光伏器件中绘制薄膜层的方法
公开(公告)号：US20080119005A1
公开(公告)日：2008-05-22
申请号：US11562573
申请日：2006-11-22
申请人： Timothy Weidman , Li Xu , Peter G. Borden
发明人： Timothy Weidman , Li Xu , Peter G. Borden
IPC分类号： H01L31/0272
CPC分类号： H01L31/0749 , H01L31/03923 , H01L31/0465 , H01L31/18 , Y02E10/541
摘要： A processing method described herein provides a method of patterning a MoSe2 and/or Mo material, for example a layer of such material(s) in a thin-film structure. According to one aspect, the invention relates to etch solutions that can effectively etch through Mo and/or MoSe2. According to another aspect, the invention relates to etching such materials when such materials are processed with other materials in a thin film photovoltaic device. According to other aspects, the invention includes a process of etching Mo and/or MoSe2 with selectivity to a layer of CIGS material in an overall process flow. According to still further aspects, the invention relates to Mo and/or MoSe2 etch solutions that are useful in an overall photolithographic process for forming a photovoltaic cell and/or interconnects and test structures in a photovoltaic device.
摘要翻译：本文所述的处理方法提供了一种图案化MoSe 2和/或Mo材料的方法，例如薄膜结构中的这种材料层。根据一个方面，本发明涉及可以有效地蚀刻通过Mo和/或MoSe 2的蚀刻溶液。根据另一方面，本发明涉及当这种材料在薄膜光伏器件中用其它材料加工时蚀刻这种材料。根据其它方面，本发明包括在整个工艺流程中对具有选择性的CIGS材料的Mo和/或MoSe 2进行蚀刻的工艺。根据另外的方面，本发明涉及可用于在光伏器件中形成光伏电池和/或互连和测试结构的整体光刻工艺中的Mo和/或MoSe 2 N 2蚀刻溶液。

6. 发明申请

US20080115821A1 MULTILAYER TRANSPARENT CONDUCTIVE OXIDE FOR IMPROVED CHEMICAL PROCESSING 审中-公开
标题翻译：用于改进化学处理的多层透明导电氧化物
公开(公告)号：US20080115821A1
公开(公告)日：2008-05-22
申请号：US11562565
申请日：2006-11-22
申请人： Li Xu , Peter G. Borden
发明人： Li Xu , Peter G. Borden
IPC分类号： H01L31/042
CPC分类号： H01L31/022466 , G02F1/13439 , H01L31/022425 , H01L31/0296 , H01L31/0322 , H01L31/046 , H01L31/0465 , H01L31/1828 , H01L31/1884 , Y02E10/50
摘要： A TCO layer structure and methods of processing the layer in thin film materials including other layers such as layers of CIGS material are disclosed herein. According to one aspect, the invention includes a novel design of a multi-layer TCO structure. According to another aspect, the TCO layer structure of the invention is comprised of inexpensive materials and is inexpensive to process and recycle. According to another aspect, the TCO layer structure of the invention is capable of being patterned using photolithographic and etch processing, but is also chemically durable.
摘要翻译：本文公开了一种TCO层结构和在包括其它层例如CIGS材料层的薄膜材料中处理该层的方法。根据一方面，本发明包括多层TCO结构的新颖设计。根据另一方面，本发明的TCO层结构由便宜的材料组成，并且处理和循环便宜。根据另一方面，本发明的TCO层结构能够使用光刻和蚀刻加工进行图案化，但也具有化学耐久性。

7. 发明授权

US10092486B2 Polyurea or polyurethane capsules 有权
公开(公告)号：US10092486B2
公开(公告)日：2018-10-09
申请号：US14911433
申请日：2014-08-15
申请人： INTERNATIONAL FLAVORS & FRAGRANCES INC. , Yabin Lei , Li Xu , Lewis Michael Popplewell
发明人： Yabin Lei , Li Xu , Lewis Michael Popplewell
IPC分类号： A61K8/11 , A61K8/84 , A61Q13/00 , A61Q5/02 , A61Q5/12 , C11B9/00 , A61K8/04 , A61Q5/00 , C11D3/50 , A61K8/73 , B01J13/14 , B01J13/16 , C11D17/00 , B01J13/20
摘要： Poiyurea or polyurethane capsule compositions. A subset of these compositions contain a plurality of capsules and a capsule formation aid, in which each of the capsules contains a poiyurea or polyurethane wall and an oil core; the poiyurea or polyurethane wall is formed of a reaction product of a polyisocyanate and a cross-linking agent in the presence of the capsule formation aid; and the oil core contains an active material. The polyisocyante, cross-linking agent, and capsule formation aids are described herein. Also disclosed are methods of preparing poiyurea and polyurethane capsule compositions, as well as consumer products containing one of these compositions.

8. 发明授权

US09151468B2 High brightness illumination devices using wavelength conversion materials 有权
标题翻译：使用波长转换材料的高亮度照明装置
公开(公告)号：US09151468B2
公开(公告)日：2015-10-06
申请号：US13807271
申请日：2011-06-28
申请人： Li Xu , Yi Zhang
发明人： Li Xu , Yi Zhang
IPC分类号： F21V9/00 , F21K99/00 , F21V9/14 , F21V29/70 , F21V9/16 , F21V29/502 , F21Y101/02
CPC分类号： F21V9/00 , F21K9/64 , F21V9/14 , F21V9/30 , F21V29/502 , F21V29/70 , F21Y2115/10 , F21Y2115/30
摘要： High lumen output and brightness illumination modules using an excitation light source and wavelength conversion part with multi-channel heat dissipation are disclosed. The exciting light source is a light emitting diode or a laser diode emitting in the UV and/or blue region. The luminescent material in the wavelength conversion part absorbs the excitation light and emit longer wavelength light. The enhancement approaches for brightness and polarization is disclosed.
摘要翻译：公开了使用具有多通道散热的激发光源和波长转换部分的高流明输出和亮度照明模块。激发光源是在UV和/或蓝色区域中发射的发光二极管或激光二极管。波长转换部中的发光材料吸收激发光并发射较长波长的光。公开了亮度和极化的增强方法。

9. 发明授权

US09028745B2 Low nickel austenitic stainless steel 有权
标题翻译：低镍奥氏体不锈钢
公开(公告)号：US09028745B2
公开(公告)日：2015-05-12
申请号：US13286373
申请日：2011-11-01
申请人： Shouxing Zhu , Li Xu , Balasubramani Nandagopal
发明人： Shouxing Zhu , Li Xu , Balasubramani Nandagopal
IPC分类号： C22C38/58 , C22C38/38 , C22C38/48 , C22C38/44
CPC分类号： C22C38/58
摘要： Various embodiments of the invention provide a low nickel austenitic stainless steel alloy composition including about 0.6% to about 0.8% by weight carbon; about 16% to about 18% by weight chromium; about 4.5% to about 5.5% by weight nickel; about 2.0% to about 5.0% by weight manganese; about 0.8% to about 1.2% by weight tungsten; about 0.8% to about 1.2% by weight molybdenum; about 0.65% to about 0.85% by weight niobium; about 0.3% to about 1.0% by weight silicon; balance iron and unavoidable impurities, wherein percentages are based on the overall weight of the composition. The invention further provides articles, such as turbine housings, prepared using the inventive alloys.
摘要翻译：本发明的各种实施方案提供了一种低镍奥氏体不锈钢合金组合物，其包含约0.6重量％至约0.8重量％的碳; 约16重量％至约18重量％的铬; 约4.5％至约5.5％重量的镍; 约2.0％至约5.0％重量的锰; 约0.8％至约1.2％重量的钨; 约0.8重量％至约1.2重量％的钼; 约0.65重量％至约0.85重量％的铌; 约0.3％至约1.0％重量的硅; 平衡铁和不可避免的杂质，其中百分数是基于组合物的总重量。本发明还提供了使用本发明合金制备的制品，例如涡轮机壳体。

10. 发明授权

US08758858B2 Method of producing a plasma-resistant thermal oxide coating 有权
标题翻译：制造耐等离子体热氧化物涂层的方法
公开(公告)号：US08758858B2
公开(公告)日：2014-06-24
申请号：US13374980
申请日：2012-01-25
申请人： Jennifer Y. Sun , Li Xu , Kenneth S. Collins , Thomas Graves , Ren-Guan Duan , Senh Thach
发明人： Jennifer Y. Sun , Li Xu , Kenneth S. Collins , Thomas Graves , Ren-Guan Duan , Senh Thach
IPC分类号： B05D3/02
CPC分类号： C23C16/4404 , H01J37/32467 , H01J37/32477
摘要： A method of creating a plasma-resistant thermal oxide coating on a surface of an article, where the article is comprised of a metal or metal alloy which is typically selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof. The oxide coating is formed using a time-temperature profile which includes an initial rapid heating rage, followed by a gradual decrease in heating rate, to produce an oxide coating structure which is columnar in nature. The grain size of the crystals which make up the oxide coating is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate.
摘要翻译：一种在制品的表面上产生耐等离子体热氧化物涂层的方法，其中制品由金属或金属合金组成，金属或金属合金通常选自钇，钕，钐，铽，镝，铒，镱，钪，铪，铌或其组合。使用时间 - 温度曲线形成氧化物涂层，其包括初始的快速加热，然后逐渐降低加热速率，以产生本质上为柱状的氧化物涂层结构。构成氧化物涂层的晶体的晶粒尺寸在氧化物涂层的表面比在氧化物涂层和金属或金属合金衬底之间的界面处大，并且氧化物涂层在氧化物之间的界面处被压缩涂层和金属或金属合金基材。

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