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1. 发明授权

US08574958B2 Method for manufacturing a gate-control diode semiconductor memory device 有权
标题翻译：栅极控制二极管半导体存储器件的制造方法
公开(公告)号：US08574958B2
公开(公告)日：2013-11-05
申请号：US13535032
申请日：2012-06-27
申请人： Pengfei Wang , Xiaoyong Liu , Qingqing Sun , Wei Zhang
发明人： Pengfei Wang , Xiaoyong Liu , Qingqing Sun , Wei Zhang
IPC分类号： H01L21/00
CPC分类号： H01L29/7391 , H01L29/8616
摘要： This invention belongs to semiconductor device manufacturing field and discloses a method for manufacturing a gate-control diode semiconductor storage device. When the floating gate voltage is relatively high, the channel under the floating gate is of n type and a simple gate-control pn junction structure is configured; by controlling effective n-type concentration of the ZnO film through back-gate control, inverting the n-type ZnO into p-type through a floating gate and using NiO as a p-type semiconductor, an n-p-n-p doping structure is formed while the quantity of charges in the floating gate determines the device threshold voltage, thus realizing memory functions. This invention features capacity of manufacturing gate-control diode memory devices able to reduce the chip power consumption through advantages of high driving current and small sub-threshold swing. This invention is applicable to semiconductor devices manufacturing based on flexible substrate and flat panel displays and floating gate memories, etc.
摘要翻译：本发明属于半导体器件制造领域，并且公开了一种用于制造栅极控制二极管半导体存储器件的方法。当浮动栅极电压相对较高时，浮动栅极下的沟道为n型，并配置了简单的栅极控制pn结结构; 通过背栅控制来控制ZnO膜的有效n型浓度，通过浮栅将n型ZnO反转为p型，并使用NiO作为p型半导体，形成npnp掺杂结构，浮动门中的电荷决定了器件的阈值电压，从而实现了存储器的功能。本发明具有制造栅极控制二极管存储器件的能力，其能够通过高驱动电流和小的次级阈值摆动的优点来降低芯片功耗。本发明适用于基于柔性基板和平板显示器和浮动栅极存储器等的半导体器件制造。

2. 发明申请

US20130178012A1 METHOD FOR MANUFACTURING A GATE-CONTROL DIODE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造门控二极管半导体器件的方法
公开(公告)号：US20130178012A1
公开(公告)日：2013-07-11
申请号：US13534973
申请日：2012-06-27
申请人： Pengfei Wang , Xiaoyong Liu , Qingqing Sun , Wei Zhang
发明人： Pengfei Wang , Xiaoyong Liu , Qingqing Sun , Wei Zhang
IPC分类号： H01L21/336
CPC分类号： H01L29/7391 , H01L29/267 , H01L29/66356
摘要： This invention belongs to semiconductor device manufacturing field and discloses a method for manufacturing a gate-control diode semiconductor device. When the gate voltage is relatively high, the channel under the gate is of n-type and the device is of a simple gate-control pn junction structure; by way of controlling the effective n-type concentration of the ZnO film through back-gate control, inverting the n-type ZnO into p-type through the gate, and using NiO as a p-type semiconductor, an n-p-n-p doping structure is formed. The method features capacity of manufacturing gate-control diode devices able to reduce chip power consumption through the advantages of high driving current and small sub-threshold swing. The present invention using a low temperature process production is especially applicable to the manufacturing of semiconductor devices based on flexible substrates and reading & writing devices that have a flat panel display and phase change memory.
摘要翻译：本发明属于半导体器件制造领域，并且公开了一种用于制造栅极控制二极管半导体器件的方法。当栅极电压相对较高时，栅极下的沟道为n型，器件具有简单的栅极控制pn结结构; 通过背栅控制来控制ZnO膜的有效n型浓度，通过栅极将n型ZnO转换为p型，并且使用NiO作为p型半导体，形成npnp掺杂结构。该方法具有制造栅极控制二极管器件的能力，能够通过高驱动电流和小次阈值摆幅的优点降低芯片功耗。使用低温工艺生产的本发明特别适用于基于柔性基板和具有平板显示器和相变存储器的读写装置的半导体器件的制造。

3. 发明申请

US20130178014A1 METHOD FOR MANUFACTURING A GATE-CONTROL DIODE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：制造门控二极管半导体存储器件的方法
公开(公告)号：US20130178014A1
公开(公告)日：2013-07-11
申请号：US13535032
申请日：2012-06-27
申请人： Pengfei Wang , Xiaoyong Liu , Qingqing Sun , Wei Zhang
发明人： Pengfei Wang , Xiaoyong Liu , Qingqing Sun , Wei Zhang
IPC分类号： H01L21/441
CPC分类号： H01L29/7391 , H01L29/8616
摘要： This invention belongs to semiconductor device manufacturing field and discloses a method for manufacturing a gate-control diode semiconductor storage device. When the floating gate voltage is relatively high, the channel under the floating gate is of n type and a simple gate-control pn junction structure is configured; by controlling effective n-type concentration of the ZnO film through back-gate control, inverting the n-type ZnO into p-type through a floating gate and using NiO as a p-type semiconductor, an n-p-n-p doping structure is formed while the quantity of charges in the floating gate determines the device threshold voltage, thus realizing memory functions. This invention features capacity of manufacturing gate-control diode memory devices able to reduce the chip power consumption through advantages of high driving current and small sub-threshold swing. This invention is applicable to semiconductor devices manufacturing based on flexible substrate and flat panel displays and floating gate memories, etc.
摘要翻译：本发明属于半导体器件制造领域，并且公开了一种用于制造栅极控制二极管半导体存储器件的方法。当浮动栅极电压相对较高时，浮动栅极下的沟道为n型，并配置了简单的栅极控制pn结结构; 通过背栅控制来控制ZnO膜的有效n型浓度，通过浮栅将n型ZnO反向为p型，并使用NiO作为p型半导体，形成npnp掺杂结构，浮动门中的电荷决定了器件的阈值电压，从而实现了存储器的功能。本发明具有制造栅极控制二极管存储器件的能力，其能够通过高驱动电流和小的次级阈值摆动的优点来降低芯片功耗。本发明适用于基于柔性基板和平板显示器和浮动栅极存储器等的半导体器件制造。

4. 发明授权

US08969911B2 Photo detector consisting of tunneling field-effect transistors and the manufacturing method thereof 有权
标题翻译：由隧道场效应晶体管组成的光电探测器及其制造方法
公开(公告)号：US08969911B2
公开(公告)日：2015-03-03
申请号：US13446834
申请日：2012-04-13
申请人： Pengfei Wang , Xi Lin , Wei Wang , Xiaoyong Liu , Wei Zhang
发明人： Pengfei Wang , Xi Lin , Wei Wang , Xiaoyong Liu , Wei Zhang
IPC分类号： H01L33/00 , H01L31/111 , H01L31/113 , G02B6/42 , H01L31/0232 , H01L31/18
CPC分类号： H01L31/1804 , G02B6/42 , G02B6/4214 , H01L27/2454 , H01L27/304 , H01L31/02327 , H01L31/113 , H01L31/1136 , Y02E10/547 , Y02P70/521
摘要： The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.
摘要翻译：本发明属于光互连的技术领域，涉及光检测器，特别涉及由隧道场效应晶体管构成的光检测器。

5. 发明申请

US20150132883A1 PHOTO DETECTOR CONSISTING OF TUNNELING FIELD-EFFECT TRANSISTORS AND THE MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：隧道场效应晶体管的照相检测器及其制造方法
公开(公告)号：US20150132883A1
公开(公告)日：2015-05-14
申请号：US14600196
申请日：2015-01-20
申请人： Pengfei Wang , Xi Lin , Wei Wang , Xiaoyong Liu , Wei Zhang
发明人： Pengfei Wang , Xi Lin , Wei Wang , Xiaoyong Liu , Wei Zhang
IPC分类号： H01L31/18 , H01L31/113 , H01L31/0232
CPC分类号： H01L31/1804 , G02B6/42 , G02B6/4214 , H01L27/2454 , H01L27/304 , H01L31/02327 , H01L31/113 , H01L31/1136 , Y02E10/547 , Y02P70/521
摘要： The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.
摘要翻译：本发明属于光互连的技术领域，涉及光检测器，特别涉及由隧道场效应晶体管构成的光检测器。

6. 发明申请

US20120261669A1 PHOTO DETECTOR CONSISTING OF TUNNELING FIELD-EFFECT TRANSISTORS AND THE MANUFACTURING METHOD THEREOF 有权
标题翻译：隧道场效应晶体管的照相检测器及其制造方法
公开(公告)号：US20120261669A1
公开(公告)日：2012-10-18
申请号：US13446834
申请日：2012-04-13
申请人： Pengfei Wang , Xi Lin , Wei Wang , Xiaoyong Liu , Wei Zhang
发明人： Pengfei Wang , Xi Lin , Wei Wang , Xiaoyong Liu , Wei Zhang
IPC分类号： H01L31/0368 , H01L31/18 , H01L31/0232
CPC分类号： H01L31/1804 , G02B6/42 , G02B6/4214 , H01L27/2454 , H01L27/304 , H01L31/02327 , H01L31/113 , H01L31/1136 , Y02E10/547 , Y02P70/521
摘要： The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.
摘要翻译：本发明属于光互连的技术领域，涉及光检测器，特别涉及由隧道场效应晶体管构成的光检测器。

7. 发明授权

US09087958B2 Photo detector consisting of tunneling field-effect transistors and the manufacturing method thereof 有权
公开(公告)号：US09087958B2
公开(公告)日：2015-07-21
申请号：US14600196
申请日：2015-01-20
申请人： Pengfei Wang , Xi Lin , Wei Wang , Xiaoyong Liu , Wei Zhang
发明人： Pengfei Wang , Xi Lin , Wei Wang , Xiaoyong Liu , Wei Zhang
IPC分类号： H01L27/30 , H01L31/111 , H01L31/0232 , H01L27/24 , H01L31/18 , H01L31/113
CPC分类号： H01L31/1804 , G02B6/42 , G02B6/4214 , H01L27/2454 , H01L27/304 , H01L31/02327 , H01L31/113 , H01L31/1136 , Y02E10/547 , Y02P70/521
摘要： The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.

8. 发明申请

US20220388920A1 Urea-Formaldehyde Slow-Release Nitrogen Fertilizer And Manufacturing Method Thereof 有权
公开(公告)号：US20220388920A1
公开(公告)日：2022-12-08
申请号：US17341397
申请日：2021-06-08
申请人： Jianmin Hu , Peikun Wan , Jinzhe Hu , Yuntao Bai , Xiaoyong Liu , Shumin Hu
发明人： Jianmin Hu , Peikun Wan , Jinzhe Hu , Yuntao Bai , Xiaoyong Liu , Shumin Hu
IPC分类号： C05C9/02 , C05C9/00 , C05G5/12 , C05G3/90 , C05G1/00 , C05D1/02 , C05B7/00 , C05D9/02
摘要： A method for manufacturing a urea-formaldehyde slow-release nitrogen fertilizer includes steps of: mixing and heating urea and formaldehyde solution with a predetermined molar ratio of urea to formaldehyde; adjusting a PH value of hydroxymethylation reaction of urea and formaldehyde solution to 7.5-10.5; heating the hydroxymethylation reaction of urea and formaldehyde solution to the initial reaction temperature of 50° C.; adding a catalyst to start the hydroxymethylation reaction of urea and formaldehyde solution, and conducting hydroxymethylation reaction intermittently or continuously; heating cold urea-formaldehyde solution using the reaction heat of hydroxymethylation; adjusting the pH value of the methylenation reaction of urea and formaldehyde solution to 3.5-5.0; adding a catalyst; completing the methylenation reaction of urea and formaldehyde solution within 1 to 10 minutes; and performing spraying granulation of slurry after the methylenation reaction of urea and formaldehyde solution in the granulator to obtain a urea-formaldehyde slow-release nitrogen fertilizer.

9. 发明授权

US07595882B1 Hollow-core waveguide-based raman systems and methods 有权
标题翻译：基于空心波导的拉曼系统和方法
公开(公告)号：US07595882B1
公开(公告)日：2009-09-29
申请号：US12102079
申请日：2008-04-14
申请人： Rui Chen , Marko Klaus Baller , Peter Joseph Codella , Anis Zribi , Renato Guida , Alexey Vasily Vert , Radislav Alexandrovich Potyrailo , Xiaoyong Liu , Zhiyong Wang
发明人： Rui Chen , Marko Klaus Baller , Peter Joseph Codella , Anis Zribi , Renato Guida , Alexey Vasily Vert , Radislav Alexandrovich Potyrailo , Xiaoyong Liu , Zhiyong Wang
IPC分类号： G01N21/00
CPC分类号： G01N21/65 , G01N21/0303 , G01N21/05 , G01N2021/655
摘要： Embodiments of the invention include a system for sensing homonuclear diatomic molecules, such as, for example, nitrogen. Other embodiments include a method for sensing homonuclear diatomic molecules. The system may include a light source, a hollow-core wave-guiding device that exhibits a low attenuation at predetermined operating optical frequencies and is in optical communication with the light source, a gas introduction system for introducing a gaseous medium between the light source and the hollow-core wave-guiding device, and a detector in optical communication with the hollow-core wave-guiding device.
摘要翻译：本发明的实施例包括用于感测同核双原子分子（例如氮）的系统。其他实施方案包括用于感测同核双原子分子的方法。该系统可以包括光源，在预定的操作光频率下呈现低衰减并与光源光学通信的中空波导引装置，用于在光源和中空波导装置以及与中空导波装置光连通的检测器。

10. 发明申请

US20080282904A1 Automatic or Semi-Automatic Turning Method and Device 审中-公开
标题翻译：自动或半自动车削方法和装置
公开(公告)号：US20080282904A1
公开(公告)日：2008-11-20
申请号：US11813718
申请日：2005-01-09
申请人： Xiaoyong Liu
发明人： Xiaoyong Liu
IPC分类号： A47J43/04
CPC分类号： A47J37/108 , A47J36/165 , A47J43/0722
摘要： The present invention provides an automatic or semi-automatic method for turning over and/or stirring the cooking material of a cooking container in an automatic or semi-automatic cooking utensil. The method can comprise the following steps: (1) limiting the cooking material in a cooking container within a desired area in its main direction or all directions by a limiting means, and (2) turning over or stirring the cooking material limited in the desired area of the cooking container through the movement of the cooking container and/or by a turning-over/stirring means. The present invention also provides a turning-over/stirring device with a limiting means and an automatic or semi-automatic cooking utensil with such a turning-over/stirring device.
摘要翻译：本发明提供了一种用于在自动或半自动炊具中翻转和/或搅拌烹饪容器的烹饪材料的自动或半自动方法。该方法可以包括以下步骤：（1）通过限制装置将烹饪容器中的烹饪容器在其主要方向或所有方向上的期望区域内限制，以及（2）翻转或搅拌限定在期望的烹饪材料通过烹饪容器的移动和/或通过翻转/搅拌装置的烹饪容器的区域。本发明还提供一种具有限制装置的翻转/搅拌装置和具有这种翻转/搅拌装置的自动或半自动烹饪器具。

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