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    • 8. 发明申请
    • METHOD OF PRODUCING THIN SEMICONDUCTOR STRUCTURES
    • 生产薄膜半导体结构的方法
    • US20090218590A1
    • 2009-09-03
    • US12415467
    • 2009-03-31
    • Yong CaiHungShen ChuShengmei ZhengKa Wah Chan
    • Yong CaiHungShen ChuShengmei ZhengKa Wah Chan
    • H01L33/00H01L21/02
    • H01L33/0079H01L33/0095H01L33/44
    • A method of making a thin gallium-nitride (GaN)-based semiconductor structure is provided. According to one embodiment of the invention, the method includes the steps of providing a substrate; sequentially forming one or more semiconductor layers on the substrate; etching a pattern in the one or more semiconductor layers; depositing a dielectrics layer; forming a photoresist on a portion of the dielectrics layer, wherein the portion of the dielectrics layer is deposited on the one or more semiconductor layers; depositing a primer; removing the photoresist layer, wherein the primer on the photoresist is also removed; depositing a superhard material, wherein the superhard material forms in the pattern; and removing the substrate. Accordingly, the superhard material may be selectively deposited in only areas where the superhard material is desired. Vertical GaN-based light emitting devices may then be formed by cutting the semiconductor structure.
    • 提供一种制造薄氮化镓(GaN)基半导体结构的方法。 根据本发明的一个实施例,该方法包括以下步骤:提供衬底; 在衬底上依次形成一个或多个半导体层; 蚀刻所述一个或多个半导体层中的图案; 沉积介电层; 在所述电介质层的一部分上形成光致抗蚀剂,其中所述电介质层的所述部分沉积在所述一个或多个半导体层上; 沉积底漆; 去除光致抗蚀剂层,其中光致抗蚀剂上的底漆也被除去; 沉积超硬材料,其中超硬材料以图案形成; 并去除衬底。 因此,超硬材料可以选择性地沉积在仅需要超硬材料的区域中。 然后可以通过切割半导体结构来形成垂直的GaN基发光器件。