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    • 7. 发明申请
    • THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
    • 薄膜晶体管及其制造方法
    • US20160043227A1
    • 2016-02-11
    • US14762521
    • 2013-11-11
    • PEKING UNIVERSITY SHENZHEN GRADUATE SCHOOL
    • Shengdong ZhangYang ShaoXin HeXiang Xiao
    • H01L29/786H01L21/477H01L21/461H01L21/465H01L29/66H01L29/423
    • H01L29/7869H01L21/461H01L21/465H01L21/467H01L21/477H01L29/42384H01L29/66969
    • A method of manufacturing a thin film transistor, comprising: forming a gate electrode (2) on a first surface of a substrate (1); forming on the first surface of the substrate a gate dielectric layer (3) covering the gate electrode; forming a metal oxide semiconductor layer (4) on the gate dielectric layer; processing the metal oxide semiconductor layer to form a channel region (5) exposed thereon; anode-oxidizing the channel region, such that the channel region has a first carrier concentration; and conducting photolithography and etching the metal oxide semiconductor layer to form an active region, the active region comprising the channel region, and a source region (6) and a drain region (7) located at the two sides of the channel region and having a second carrier concentration, the first carrier concentration being lower than the second carrier concentration. The source region, the drain region and the channel region of a thin film transistor manufactured using the above method are located on the same film layer, and the channel region has a carrier concentration lower than the carrier concentration of the source region and the drain region.
    • 一种制造薄膜晶体管的方法,包括:在基板(1)的第一表面上形成栅电极(2); 在所述基板的第一表面上形成覆盖所述栅电极的栅介质层(3); 在所述栅极电介质层上形成金属氧化物半导体层(4); 处理所述金属氧化物半导体层以形成在其上暴露的沟道区域(5); 阳极氧化沟道区,使得沟道区具有第一载流子浓度; 并且对所述金属氧化物半导体层进行光刻和蚀刻以形成有源区,所述有源区包括所述沟道区,以及位于所述沟道区的两侧的源区(6)和漏区(7),并且具有 第二载流子浓度,第一载流子浓度低于第二载流子浓度。 使用上述方法制造的薄膜晶体管的源极区域,漏极区域和沟道区域位于同一膜层上,并且沟道区域的载流子浓度低于源区域和漏极区域的载流子浓度 。