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1. 发明授权

US5298715A Lasersonic soldering of fine insulated wires to heat-sensitive substrates 失效
标题翻译：将精细绝缘电线的激光焊接到热敏基板上
公开(公告)号：US5298715A
公开(公告)日：1994-03-29
申请号：US874666
申请日：1992-04-27
申请人： Pedro A. Chalco , Wesley L. Hillman , Richard H. Kurth , Nicholas T. Panousis
发明人： Pedro A. Chalco , Wesley L. Hillman , Richard H. Kurth , Nicholas T. Panousis
IPC分类号： B23K1/005 , B23K20/10 , B23K26/06 , B29C65/08 , H05K3/34 , B23K26/00
CPC分类号： B29C66/69 , B23K1/0056 , B23K20/10 , B23K26/06 , B23K26/0604 , B29C65/08 , H05K3/341 , H05K3/3494
摘要： A combination of laser energy and ultrasonic energy is used for soldering an insulated wire to a pad located on a substrate. The combined laser energy and ultrasonic energy strips the insulation from the wire and solders the resulting bare wire to the pad. The method has particular use for soldering insulated wire to pads located on heat sensitive substrates or to pads located in close proximity to heat sensitive devices. A principal application is for soldering fine insulated wires for connecting a thin film magnetic head to a circuit carrier substrate.
摘要翻译：使用激光能量和超声波能量的组合来将绝缘电线焊接到位于基板上的焊盘。组合的激光能量和超声波能量从电线剥离绝缘体，并将所得裸线焊接到焊盘。该方法特别用于将绝缘导线焊接到位于热敏基板上的焊盘或靠近热敏器件的焊盘。主要应用是用于焊接用于将薄膜磁头连接到电路载体衬底的细绝缘电线。

2. 发明授权

US4169008A Process for producing uniform nozzle orifices in silicon wafers 失效
标题翻译：在硅晶片上生产均匀的喷嘴孔的工艺
公开(公告)号：US4169008A
公开(公告)日：1979-09-25
申请号：US925126
申请日：1978-07-17
申请人： Richard H. Kurth
发明人： Richard H. Kurth
IPC分类号： B41J2/16 , G01D15/18 , H01L21/306 , H01L21/308
CPC分类号： B41J2/1626 , B41J2/162 , B41J2/1631 , B41J2/1632 , G01D15/18 , H01L21/30608
摘要： Nozzle plates for ink jet recording are produced by etching through silicon and like monocrystalline material wafers which frequently are non-uniform in thickness. The "100" plane surfaces of the wafers are coated with etchant masking material after which a nozzle array pattern is defined on the obverse surface and a similar, but larger and less exacting, aperture array of the same pattern is defined on the reverse surface. The silicon wafer as thus exposed is anisotropically etched from the reverse substantially through to the obverse and thereafter etched completely through the wafer from the obverse by the same anisotropic process. The lateral walls of the nozzles are substantially in the "111" plane of the wafers. The masking material is then stripped from the wafer.
摘要翻译：用于喷墨记录的喷嘴板通过蚀刻通常通常是厚度不均匀的硅等单晶材料晶片来制造。晶片的“100”平面表面涂有蚀刻剂掩蔽材料，之后在正面上限定喷嘴阵列图案，并且在相反表面上限定相同图案的相似但较大且较不严格的孔径阵列。如此暴露的硅晶片从反向基本上通过正向各向异性蚀刻，然后从正面通过相同的各向异性工艺完全蚀刻通过晶片。喷嘴的侧壁基本上在晶片的“111”平面内。然后将掩模材料从晶片剥离。

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