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1. 发明授权

US06537918B2 Method for etching silicon oxynitride and dielectric antireflection coatings 失效
标题翻译：蚀刻氮氧化硅和介电抗反射涂层的方法
公开(公告)号：US06537918B2
公开(公告)日：2003-03-25
申请号：US09920251
申请日：2001-07-31
申请人： Pavel Ionov , Sung Ho Kim , Dean Li , Chun Yan , James Chang Wang
发明人： Pavel Ionov , Sung Ho Kim , Dean Li , Chun Yan , James Chang Wang
IPC分类号： H01L21302
CPC分类号： H01L21/32139 , H01L21/0276 , H01L21/31116 , H01L21/3143
摘要： A method for plasma etching a semiconductor film stack. The film stack includes at least one layer comprising silicon oxynitride. The method includes etching the silicon oxynitride-comprising layer using an etchant gas mixture comprising chlorine and at least one compound containing fluorine and carbon. The atomic ratio of fluorine to chlorine in the etchant gas ranges between about 3:1 and about 0.01:1; preferably, between about 0.5:1 and about 0.01:1; most preferably, between about 0.25:1 and about 0.1:1. The etchant gas forms a fluorine-comprising polymer or species which deposits on exposed surfaces adjacent to the silicon oxynitride-comprising layer in an amount sufficient to reduce the etch rate of an adjacent material (such as a photoresist) while permitting the etching of the silicon oxynitride-comprising layer.
摘要翻译：一种用于等离子体蚀刻半导体膜堆叠的方法。薄膜叠层包括至少一层包含氮氧化硅的层。该方法包括使用包含氯和至少一种含氟和碳的化合物的蚀刻剂气体混合物来蚀刻含氧氮化硅层。蚀刻剂气体中氟与氯的原子比范围为约3:1至约0.01:1; 优选约0.5:1至约0.01:1; 最优选在约0.25:1至约0.1:1之间。蚀刻剂气体形成含氟聚合物或物质，它们以足以降低邻近材料（例如光致抗蚀剂）蚀刻速率的量沉积在与含氮氧化硅层相邻的暴露表面上，同时允许蚀刻硅含氧氮化物的层。

2. 发明授权

US06291356B1 Method for etching silicon oxynitride and dielectric antireflection coatings 失效
标题翻译：蚀刻氮氧化硅和介电抗反射涂层的方法
公开(公告)号：US06291356B1
公开(公告)日：2001-09-18
申请号：US09317655
申请日：1999-05-24
申请人： Pavel Ionov , Sung Ho Kim , Dean Li , Chun Yan , James Chang Wang
发明人： Pavel Ionov , Sung Ho Kim , Dean Li , Chun Yan , James Chang Wang
IPC分类号： H01L21302
CPC分类号： H01L21/32139 , H01L21/0276 , H01L21/31116 , H01L21/3143
摘要： The present disclosure pertains to a method for plasma etching a semiconductor film stack. The film stack includes at least one layer comprising silicon oxynitride. The method includes etching the silicon oxynitride-comprising layer using an etchant gas mixture comprising chlorine and at least one compound containing fluorine and carbon. The atomic ratio of fluorine to chlorine in the etchant gas ranges between about 3:1 and about 0.01:1; preferably, between about 0.5:1 and about 0.01:1; most preferably, between about 0.25:1 and about 0.1:1. The etchant gas forms a fluorine-comprising polymer or species which deposits on exposed surfaces adjacent to the silicon oxynitride-comprising layer in an amount sufficient to reduce the etch rate of an adjacent material (such as a photoresist) while permitting the etching of the silicon oxynitride-comprising layer.
摘要翻译：本公开涉及用于等离子体蚀刻半导体膜堆叠的方法。薄膜叠层包括至少一层包含氮氧化硅的层。该方法包括使用包含氯和至少一种含氟和碳的化合物的蚀刻剂气体混合物来蚀刻含氧氮化硅层。蚀刻剂气体中氟与氯的原子比范围为约3:1至约0.01:1; 优选约0.5:1至约0.01:1; 最优选在约0.25:1至约0.1:1之间。蚀刻剂气体形成含氟聚合物或物质，它们以足以降低邻近材料（例如光致抗蚀剂）蚀刻速率的量沉积在与含氮氧化硅层相邻的暴露表面上，同时允许蚀刻硅含氧氮化物的层。

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