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1. 发明授权

US07193901B2 Monitoring the threshold voltage of frequently read cells 有权
标题翻译：监控频繁读取单元格的阈值电压
公开(公告)号：US07193901B2
公开(公告)日：2007-03-20
申请号：US11104824
申请日：2005-04-13
申请人： Paul Ruby , Sean Eilert
发明人： Paul Ruby , Sean Eilert
IPC分类号： G11C11/34
CPC分类号： G11C16/3418 , G11C16/3427
摘要： A canary cell may be used in a semiconductor memory to indicate an incipient failure. For example, the canary cell may be provided on rows in a flash memory. Before a read disturb occurs, the canary cell may first sense the condition, for example, because it may be biased with a higher drain bias and is, therefore, more susceptible to the read disturb problem.
摘要翻译：半导体存储器中可以使用金丝雀单元来指示初始故障。例如，可以在闪存中的行上提供金丝雀单元。在读取干扰发生之前，金丝雀单元可以首先感测该状况，例如，因为它可能以较高的漏极偏置偏置，因此更容易受到读取干扰问题的影响。

2. 发明申请

US20060233020A1 Monitoring the threshold voltage of frequently read cells 有权
标题翻译：监控频繁读取单元格的阈值电压
公开(公告)号：US20060233020A1
公开(公告)日：2006-10-19
申请号：US11104824
申请日：2005-04-13
申请人： Paul Ruby , Sean Eilert
发明人： Paul Ruby , Sean Eilert
IPC分类号： G11C16/06
CPC分类号： G11C16/3418 , G11C16/3427
摘要： A canary cell may be used in a semiconductor memory to indicate an incipient failure. For example, the canary cell may be provided on rows in a flash memory. Before a read disturb occurs, the canary cell may first sense the condition, for example, because it may be biased with a higher drain bias and is, therefore, more susceptible to the read disturb problem.
摘要翻译：半导体存储器中可以使用金丝雀单元来指示初始故障。例如，可以在闪存中的行上提供金丝雀单元。在读取干扰发生之前，金丝雀单元可以首先感测该状况，例如，因为它可能以较高的漏极偏置偏置，因此更容易受到读取干扰问题的影响。

3. 发明授权

US09779057B2 Autonomous memory architecture 有权
公开(公告)号：US09779057B2
公开(公告)日：2017-10-03
申请号：US12557776
申请日：2009-09-11
申请人： Sean Eilert , Mark Leinwander , Jared Hulbert
发明人： Sean Eilert , Mark Leinwander , Jared Hulbert
IPC分类号： G06F17/30 , G06F15/173
CPC分类号： G06F15/17318
摘要： An autonomous memory device in a distributed memory sub-system can receive a database downloaded from a host controller. The autonomous memory device can pass configuration routing information and initiate instructions to disperse portions of the database to neighboring die using an interface that handles inter-die communication. Information is then extracted from the pool of autonomous memory and passed through a host interface to the host controller.

4. 发明授权

US08572466B2 Apparatuses, systems, devices, and methods of replacing at least partially non-functional portions of memory 有权
公开(公告)号：US08572466B2
公开(公告)日：2013-10-29
申请号：US13154358
申请日：2011-06-06
申请人： Chris Bueb , Sean Eilert
发明人： Chris Bueb , Sean Eilert
IPC分类号： G11C29/00 , H03M13/00
CPC分类号： G11C29/765 , G06F11/10 , G06F11/1044 , G06F11/1048 , G06F11/1072 , G11C29/42 , G11C29/52 , G11C29/808 , G11C29/82 , G11C2029/0409 , G11C2029/0411
摘要： Subject matter disclosed herein relates to determining that a portion of a memory is at least partially non-functional, replacing the portion of at least partially non-functional memory; and adjusting an error detection and/or correction process responsive to determining that the portion of the memory is at least partially non-functional and/or replacing the portion of at least partially non-functional memory.

5. 发明授权

US07944764B1 Writing to non-volatile memory during a volatile memory refresh cycle 有权
标题翻译：在易失性存储器刷新周期期间写入非易失性存储器
公开(公告)号：US07944764B1
公开(公告)日：2011-05-17
申请号：US12347900
申请日：2008-12-31
申请人： Shekoufeh Qawami , Sean Eilert
发明人： Shekoufeh Qawami , Sean Eilert
IPC分类号： G11C7/00
CPC分类号： G11C11/406 , G11C11/005 , G11C13/0004 , G11C13/0033 , G11C13/0061 , G11C13/0069 , G11C16/3431
摘要： Writing to non-volatile memory during a volatile memory refresh cycle is described. In one example, a write command is received and data is received to write into a memory cell. The data is temporarily stored in response to the write command. A refresh command is received and the temporarily stored data is written into the memory cell in response to the refresh command.
摘要翻译：描述在易失性存储器刷新周期期间写入非易失性存储器。在一个示例中，接收写入命令并接收数据以写入存储器单元。响应于写命令临时存储数据。接收到刷新命令，并且响应于刷新命令将临时存储的数据写入存储器单元。

6. 发明申请

US20060059385A1 Volatile storage based power loss recovery mechanism 有权
标题翻译：基于易失性存储的功率损耗恢复机制
公开(公告)号：US20060059385A1
公开(公告)日：2006-03-16
申请号：US10933862
申请日：2004-09-02
申请人： Sunil Atri , Sean Eilert
发明人： Sunil Atri , Sean Eilert
IPC分类号： G06F11/00
CPC分类号： G06F11/1441 , G11C5/141 , G11C14/00 , G11C16/102
摘要： According to some embodiments, power loss recovery information related to an active operation is stored in volatile memory. Upon detection of a power loss condition, the power loss recovery information is copied to non-volatile memory. Upon a return of power, the power loss recovery information is used to complete or correct the interrupted operation.
摘要翻译：根据一些实施例，与有效操作有关的功率损耗恢复信息被存储在易失性存储器中。在检测到功率损耗状况时，将功率损耗恢复信息复制到非易失性存储器。在电源恢复时，功率损耗恢复信息用于完成或纠正中断的操作。

7. 发明授权

US08504893B1 Error detection or correction of a portion of a codeword in a memory device 有权
标题翻译：错误检测或校正存储器件中码字的一部分
公开(公告)号：US08504893B1
公开(公告)日：2013-08-06
申请号：US12894920
申请日：2010-09-30
申请人： Christopher Bueb , Sean Eilert
发明人： Christopher Bueb , Sean Eilert
IPC分类号： H03M13/00
CPC分类号： H03M13/29 , H03M13/093
摘要： Example embodiments described herein may relate error detection and correction on a portion of a codeword in a memory device.
摘要翻译：这里描述的示例性实施例可以涉及存储器件中的码字的一部分上的错误检测和校正。

8. 发明申请

US20120221917A1 ERROR CONTROL IN MEMORY STORAGE SYSTEMS 有权
标题翻译：内存存储系统中的错误控制
公开(公告)号：US20120221917A1
公开(公告)日：2012-08-30
申请号：US13037298
申请日：2011-02-28
申请人： Christopher Bueb , Sean Eilert
发明人： Christopher Bueb , Sean Eilert
IPC分类号： H03M13/29 , G06F11/10
CPC分类号： G06F11/1076 , G06F11/0793 , G06F11/1012 , H03M13/13 , H03M13/159 , H03M13/3746 , H03M13/6325
摘要： A method includes calculating a first syndrome of a codeword read from a memory location under a first set of conditions and calculating a second syndrome of the codeword read from the memory location under a second set of conditions. The method also includes analyzing the first and second syndromes and applying one of the first and second syndromes to the codeword to find the codeword having a minimum number of errors.
摘要翻译：一种方法包括：计算在第一组条件下从存储器位置读取的码字的第一校正子，并计算在第二组条件下从存储器位置读取的码字的第二校正子。该方法还包括分析第一和第二校正子并将第一和第二校正子中的一个应用于码字以找到具有最小错误数的码字。

9. 发明申请

US20120198205A1 TRANSACTIONAL MEMORY 有权
标题翻译：交易记忆
公开(公告)号：US20120198205A1
公开(公告)日：2012-08-02
申请号：US13015396
申请日：2011-01-27
申请人： Sean Eilert
发明人： Sean Eilert
IPC分类号： G06F12/10
CPC分类号： G06F12/1009 , G06F11/1456 , G06F11/302 , G06F11/3037 , G06F11/3055 , G06F2212/1056 , G06F2212/206 , G06F2212/261
摘要： Subject matter disclosed herein relates to techniques to perform transactions using a memory device.
摘要翻译：本文公开的主题涉及使用存储器件执行事务的技术。

10. 发明授权

US07936610B1 Selective refresh of single bit memory cells 有权
标题翻译：选择性刷新单位存储单元
公开(公告)号：US07936610B1
公开(公告)日：2011-05-03
申请号：US12534792
申请日：2009-08-03
申请人： Robert Melcher , Sean Eilert , John Egler
发明人： Robert Melcher , Sean Eilert , John Egler
IPC分类号： G11C16/06
CPC分类号： G11C16/3418 , G11C16/06 , G11C16/349
摘要： Methods and systems to selectively refresh a single bit per cell non-volatile memory cell to reduce memory cell errors. In an embodiment, a memory device scans its memory cells, performing a multi-level read on memory cells in a single bit per cell mode. Depending on the state sensed, the cell is refreshed to a correct state if necessary. In one embodiment, the memory scan is appended to a user erase operation, a flash block is swapped with another bock if the state sensed indicates charge gain, and a flash cell is programmed up if the state sensed indicates charge loss.
摘要翻译：用于选择性地刷新每个单元非易失性存储单元的单个位以减少存储单元错误的方法和系统。在一个实施例中，存储器设备扫描其存储器单元，以每单元模式的单个位执行对存储器单元的多级读取。根据感测状态，如果需要，将单元格刷新到正确的状态。在一个实施例中，将存储器扫描附加到用户擦除操作，如果所感测的状态指示充电增益，则闪存块与另一个块交换，并且如果所感测的状态指示电荷损失，则闪存单元被编程。

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