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1. 发明授权

US08156476B2 Debugging support for tasks in multithreaded environments 有权
标题翻译：调试支持多线程环境中的任务
公开(公告)号：US08156476B2
公开(公告)日：2012-04-10
申请号：US12136067
申请日：2008-06-10
申请人： Paul Maybee , Johan Marien , Roger Wolff , Feng Yuan , Brian Crawford , John Cunningham , Gregg Miskelly
发明人： Paul Maybee , Johan Marien , Roger Wolff , Feng Yuan , Brian Crawford , John Cunningham , Gregg Miskelly
IPC分类号： G06F9/44
CPC分类号： G06F11/3612 , G06F11/3632
摘要： A debugger enhancement provides a debug-task-provider interface whose implementation includes routines designed to support debugging of programs that contain tasks written for a specific programming model. Task creation hierarchies, individual task properties, resource dependencies, synchronization dependencies, and other information can be made accessible during debugging, through a model-independent interface. In a multithreaded environment, a mapping between tasks and threads is also available.
摘要翻译：调试器增强功能提供了调试任务提供程序接口，其实现包括旨在支持对包含为特定编程模型编写的任务的程序的调试的例程。任务创建层次结构，单个任务属性，资源依赖关系，同步依赖关系以及其他信息可以在调试期间通过独立于模型的界面进行访问。在多线程环境中，任务和线程之间的映射也可用。

2. 发明申请

US20090307663A1 DEBUGGING SUPPORT FOR TASKS IN MULTITHREADED ENVIRONMENTS 有权
标题翻译：调试支持多种环境中的任务
公开(公告)号：US20090307663A1
公开(公告)日：2009-12-10
申请号：US12136067
申请日：2008-06-10
申请人： Paul Maybee , Johan Marien , Roger Wolff , Feng Yuan , Brian Crawford , John Cunningham , Gregg Miskelly
发明人： Paul Maybee , Johan Marien , Roger Wolff , Feng Yuan , Brian Crawford , John Cunningham , Gregg Miskelly
IPC分类号： G06F9/44
CPC分类号： G06F11/3612 , G06F11/3632
摘要： A debugger enhancement provides a debug-task-provider interface whose implementation includes routines designed to support debugging of programs that contain tasks written for a specific programming model. Task creation hierarchies, individual task properties, resource dependencies, synchronization dependencies, and other information can be made accessible during debugging, through a model-independent interface. In a multithreaded environment, a mapping between tasks and threads is also available.
摘要翻译：调试器增强功能提供了调试任务提供程序接口，其实现包括旨在支持对包含为特定编程模型编写的任务的程序的调试的例程。任务创建层次结构，单个任务属性，资源依赖关系，同步依赖关系以及其他信息可以在调试期间通过独立于模型的界面进行访问。在多线程环境中，任务和线程之间的映射也可用。

3. 发明授权

US09263342B2 Semiconductor device having a strained region 有权
标题翻译：具有应变区域的半导体器件
公开(公告)号：US09263342B2
公开(公告)日：2016-02-16
申请号：US13411214
申请日：2012-03-02
申请人： Tsung-Lin Lee , Feng Yuan , Hung-Li Chiang , Chih Chieh Yeh
发明人： Tsung-Lin Lee , Feng Yuan , Hung-Li Chiang , Chih Chieh Yeh
IPC分类号： H01L21/20 , H01L21/336 , H01L21/8238 , H01L29/78 , H01L29/66 , H01L21/265
CPC分类号： H01L29/66803 , H01L21/26513 , H01L21/26586 , H01L21/30604 , H01L21/823418 , H01L21/823431 , H01L21/823807 , H01L21/823814 , H01L29/517 , H01L29/66545 , H01L29/66628 , H01L29/66636 , H01L29/66795 , H01L29/7848 , H01L29/785
摘要： The present disclosure provides devices and methods which provide for strained epitaxial regions. A method of semiconductor fabrication is provided that includes forming a gate structure over a fin of a semiconductor substrate and forming a recess in the fin adjacent the gate structure. A sidewall of the recess is then altered. Exemplary alterations include having an altered profile, treating the sidewall, and forming a layer on the sidewall. An epitaxial region is then grown in the recess. The epitaxial region interfaces the altered sidewall of the recess and is a strained epitaxial region.
摘要翻译：本公开提供了提供应变外延区域的装置和方法。提供一种半导体制造方法，其包括在半导体衬底的翅片上形成栅极结构，并在靠近栅极结构的鳍中形成凹陷。然后改变凹槽的侧壁。示例性改变包括具有改变的轮廓，处理侧壁以及在侧壁上形成层。然后在凹槽中生长外延区域。外延区域与凹陷的改变的侧壁接触并且是应变的外延区域。

4. 发明授权

US08504909B2 Load-time memory optimization 有权
标题翻译：加载时间内存优化
公开(公告)号：US08504909B2
公开(公告)日：2013-08-06
申请号：US12098401
申请日：2008-04-04
申请人： Feng Yuan , Arindam Basak , Ahmet Gurcan , Matthew E Loar , Jesse D. McGatha , Justin A. Slone , Jerry J. Dunietz
发明人： Feng Yuan , Arindam Basak , Ahmet Gurcan , Matthew E Loar , Jesse D. McGatha , Justin A. Slone , Jerry J. Dunietz
IPC分类号： G06F17/27
CPC分类号： G06F17/2247 , G06F17/2229 , G06F17/272 , G06F17/30911
摘要： Various embodiments can be used to process packages or documents that contain markup language describing one or more documents. Markup language descriptions can be processed to identify certain objects that reoccur or are repeated in the markup language description. If a re-occurring or repeating object is encountered in the markup language description, a resource dictionary can be used to catalog such objects and, an associated object model can include, from the resource dictionary, references to a re-occurring or repeating object. By using the resource dictionary as such, memory resources can be conserved when an in-memory representation of the object model is built.
摘要翻译：可以使用各种实施例来处理包含描述一个或多个文档的标记语言的包或文档。可以处理标记语言描述以识别在标记语言描述中重现或重复的某些对象。如果在标记语言描述中遇到重新发生或重复的对象，则可以使用资源字典来对这些对象进行编目，并且相关联的对象模型可以包括来自资源字典的对再发生的或重复的对象的引用。通过使用资源字典，当构建对象模型的内存中表示时，可以节省内存资源。

5. 发明申请

US20120233602A1 PROFILE DRIVEN MULTICORE BACKGROUND COMPILATION 有权
标题翻译：配置文件驱动多媒体背景编译
公开(公告)号：US20120233602A1
公开(公告)日：2012-09-13
申请号：US13044567
申请日：2011-03-10
申请人： Subramanian Ramaswamy , David Hiniker-Roosa , Feng Yuan , Sedar Gokbulut , Ashok C. Kamath , Jan Kotas , Vance P. Morrison
发明人： Subramanian Ramaswamy , David Hiniker-Roosa , Feng Yuan , Sedar Gokbulut , Ashok C. Kamath , Jan Kotas , Vance P. Morrison
IPC分类号： G06F9/45
CPC分类号： G06F9/45516
摘要： Idle processor cores can be used to compile methods that are likely to be executed by a program based on profile data that is captured during one or more previous executions. Methods that are determined by the profile data to be likely to be used can be compiled eagerly on one or more background threads. Transparency can be achieved by ensuring that module load order is not altered because of the background threads by recording the state of loaded modules after each profiled compilation, persisting that data, and waiting to eagerly compile a method until the method to be compiled and all its dependencies has been loaded by the executing program.
摘要翻译：空闲处理器内核可用于编译可能由基于在一个或多个先前执行期间捕获的简档数据的程序执行的方法。由可能使用的配置文件数据确定的方法可以热切地编译在一个或多个后台线程上。透明度可以通过确保模块加载顺序不被改变，因为后台线程通过记录加载的模块的状态在每个配置文件编译之后，持久化数据，并等待热切地编译一个方法，直到编译方法及其所有方法依赖项由执行程序加载。

6. 发明申请

US20110117679A1 SACRIFICIAL OFFSET PROTECTION FILM FOR A FINFET DEVICE 有权
标题翻译： FINFET器件的非常偏移保护膜
公开(公告)号：US20110117679A1
公开(公告)日：2011-05-19
申请号：US12622038
申请日：2009-11-19
申请人： Tsung-Lin Lee , Feng Yuan , Chih Chieh Yeh
发明人： Tsung-Lin Lee , Feng Yuan , Chih Chieh Yeh
IPC分类号： H01L21/66 , H01L21/336
CPC分类号： H01L29/785 , H01L29/41791 , H01L29/66795 , H01L2029/7858
摘要： A method for fabricating a semiconductor device is disclosed. An exemplary embodiment of the method includes providing a substrate; forming a fin structure over the substrate; forming a gate structure, wherein the gate structure overlies a portion of the fin structure; forming a sacrificial-offset-protection layer over another portion of the fin structure; and thereafter performing an implantation process.
摘要翻译：公开了一种制造半导体器件的方法。该方法的示例性实施例包括提供衬底; 在衬底上形成翅片结构; 形成栅极结构，其中所述栅极结构覆盖所述翅片结构的一部分; 在翅片结构的另一部分上形成牺牲偏移保护层; 然后进行植入处理。

7. 发明授权

US07154503B2 Methods and systems for brush composition 有权
标题翻译：刷组合的方法和系统
公开(公告)号：US07154503B2
公开(公告)日：2006-12-26
申请号：US11095205
申请日：2005-03-31
申请人： Feng Yuan
发明人： Feng Yuan
IPC分类号： G09G5/36 , G09G5/02 , G09G5/00
CPC分类号： G06T11/001 , G06K15/02 , G06K15/1849 , G06T15/503
摘要： In various embodiments, methods and systems for brush composition are described. In one particular application of brush composition, opacity issues are addressed by focusing on the composition of objects having opacity effects in terms of the brushes that are used to render the objects. By focusing on the brushes that are used in the rendering process, instead of the individual objects and their particular colors, processing economies and efficiencies can be experienced. Specifically, in some instances, because of the particular way that overlapping objects interact, focusing on the brushes that are used with the individual objects and creatively attempting to combine or compose the brushes for operating on the areas of overlap, some processing steps that might otherwise have been required at the object/color level can be eliminated, thus providing a streamlined and efficient process.
摘要翻译：在各种实施例中，描述了用于刷组合的方法和系统。在刷子组合的一个特定应用中，通过关注具有用于渲染对象的画笔的不透明度效果的对象的组合来解决不透明度问题。通过关注在渲染过程中使用的画笔，而不是单个对象及其特定颜色，可以体验到处理经济和效率。具体来说，在某些情况下，由于重叠对象的特定方式相互作用，专注于与各个对象一起使用的画笔，并创造性地尝试组合或组合画笔以在重叠区域上进行操作，否则可能会出现一些处理步骤已被要求的对象/颜色级别可以消除，从而提供了流线型和高效的过程。

8. 发明申请

US20060227150A1 Methods and systems for brush composition 有权
公开(公告)号：US20060227150A1
公开(公告)日：2006-10-12
申请号：US11095205
申请日：2005-03-31
申请人： Feng Yuan
发明人： Feng Yuan
IPC分类号： G09G5/00
CPC分类号： G06T11/001 , G06K15/02 , G06K15/1849 , G06T15/503
摘要： In various embodiments, methods and systems for brush composition are described. In one particular application of brush composition, opacity issues are addressed by focusing on the composition of objects having opacity effects in terms of the brushes that are used to render the objects. By focusing on the brushes that are used in the rendering process, instead of the individual objects and their particular colors, processing economies and efficiencies can be experienced. Specifically, in some instances, because of the particular way that overlapping objects interact, focusing on the brushes that are used with the individual objects and creatively attempting to combine or compose the brushes for operating on the areas of overlap, some processing steps that might otherwise have been required at the object/color level can be eliminated, thus providing a streamlined and efficient process.

9. 发明申请

US20050118758A1 Method for arranging layout of CMOS device 审中-公开
标题翻译：布置CMOS器件布局的方法
公开(公告)号：US20050118758A1
公开(公告)日：2005-06-02
申请号：US10982017
申请日：2004-11-05
申请人： Feng Yuan , Ching-Fang Huang , Cheewee Liu
发明人： Feng Yuan , Ching-Fang Huang , Cheewee Liu
IPC分类号： H01L21/8238 , H01L27/02 , H01L27/092
CPC分类号： H01L29/7842 , H01L21/823807 , H01L27/0207 , H01L27/092
摘要： A method for arranging a layout of a CMOS (Complementary Metal-Oxide Semiconductor) device is provided. The current direction of the N-type MOS device is perpendicular to the P-type MOS device. The stress along one direction can be applied on both types of MOS devices to enhance the drain current and the operation speed of both devices for CMOS circuit.
摘要翻译：提供了一种布置CMOS（互补金属氧化物半导体）器件的布局的方法。 N型MOS器件的电流方向垂直于P型MOS器件。一个方向的应力可以应用于两种类型的MOS器件，以增强CMOS电路的两个器件的漏极电流和工作速度。

10. 发明授权

US09171929B2 Strained structure of semiconductor device and method of making the strained structure 有权
标题翻译：半导体器件的应变结构和制造应变结构的方法
公开(公告)号：US09171929B2
公开(公告)日：2015-10-27
申请号：US13487860
申请日：2012-06-04
申请人： Tsung-Lin Lee , Chih Chieh Yeh , Feng Yuan , Cheng-Yi Peng , Clement Hsingjen Wann
发明人： Tsung-Lin Lee , Chih Chieh Yeh , Feng Yuan , Cheng-Yi Peng , Clement Hsingjen Wann
IPC分类号： H01L29/78 , H01L27/092 , H01L29/66 , H01L29/10 , H01L29/165 , H01L21/8238 , H01L21/02
CPC分类号： H01L29/66636 , H01L21/02529 , H01L21/02532 , H01L21/02538 , H01L21/0262 , H01L21/823807 , H01L21/823814 , H01L21/823821 , H01L21/823878 , H01L27/0924 , H01L29/1054 , H01L29/165 , H01L29/66651 , H01L29/7848
摘要： An exemplary structure for a field effect transistor (FET) comprises a silicon substrate comprising a first surface; a channel portion over the first surface, wherein the channel portion has a second surface at a first height above the first surface, and a length parallel to first surface; and two source/drain (S/D) regions on the first surface and surrounding the channel portion along the length of the channel portion, wherein the two S/D regions comprise SiGe, Ge, Si, SiC, GeSn, SiGeSn, SiSn, or III-V material.
摘要翻译：用于场效应晶体管（FET）的示例性结构包括：硅衬底，其包括第一表面; 在所述第一表面上的通道部分，其中所述通道部分具有在所述第一表面上方的第一高度处的第二表面和平行于第一表面的长度; 以及沿沟道部分的长度围绕沟道部分的两个源极/漏极（S / D）区域，其中两个S / D区域包括SiGe，Ge，Si，SiC，GeSn，SiGeSn，SiSn，或III-V材料。

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