专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080224695A1 Method of Measuring a Weak Magnetic Field and Magnetic Field Sensor of Improved Sensitivity 审中-公开
标题翻译：测量弱磁场和提高灵敏度的磁场传感器的方法
公开(公告)号：US20080224695A1
公开(公告)日：2008-09-18
申请号：US11722692
申请日：2005-12-19
申请人： Paul Leroy , Frederic Nguyen Van Dau , Alain Friederich
发明人： Paul Leroy , Frederic Nguyen Van Dau , Alain Friederich
IPC分类号： G01R33/09
CPC分类号： G01R33/09
摘要： A magnetic field sensor comprises a magnetoresistive element (10) biased with a current (i) in order to measure an external magnetic field (Hext). A magnetic modulation field (Hm) is applied to a sensitive region of said sensor and the sensor comprises a synchronous detection device (14) for measuring the amplitude of an odd harmonic of the output signal.
摘要翻译：磁场传感器包括用电流（i）偏置以测量外部磁场（H SUB）的磁阻元件（10）。磁调制场（H> m）被施加到所述传感器的敏感区域，并且传感器包括用于测量输出信号的奇次谐波振幅的同步检测装置（14）。

2. 发明申请

US20080174308A1 MAGNETIC AMPLIFICATION DEVICE COMPRISING A MAGNETIC SENSOR WITH LONGITUDINAL SENSITIVITY 有权
标题翻译：包含具有长期敏感性的磁传感器的磁性放大器件
公开(公告)号：US20080174308A1
公开(公告)日：2008-07-24
申请号：US12016938
申请日：2008-01-18
申请人： Christophe Coillot , Paul Leroy , Gerard Chanteur , Alain Roux , Frederic Nguyen Van Dau
发明人： Christophe Coillot , Paul Leroy , Gerard Chanteur , Alain Roux , Frederic Nguyen Van Dau
IPC分类号： G01R33/09
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/096
摘要： The invention relates to a magnetic amplification device comprising a magnetic sensor with longitudinal sensitivity, having a first piece of magnetic material and a second piece of magnetic material, each of the pieces having a longitudinal slot at its center, the pieces being separated by a distance called the gap, and the magnetic sensor being inserted into the two slots. The device of the invention typically makes it possible to measure low magnetic fields smaller than the Earth's field using a magnetic sensor of the AMR type.
摘要翻译：本发明涉及一种磁放大装置，包括具有纵向灵敏度的磁传感器，具有第一片磁性材料和第二片磁性材料，其中每一片在其中心具有一纵向槽，该片分离一段距离称为间隙，并且磁传感器被插入到两个槽中。本发明的装置通常可以使用AMR型的磁传感器来测量小于地球场的低磁场。

3. 发明授权

US07969762B2 Spintronic device with control by domain wall displacement induced by a current of spin-polarized carriers 有权
标题翻译：由自旋极化载流子电流引起的由畴壁位移控制的自旋电子器件
公开(公告)号：US07969762B2
公开(公告)日：2011-06-28
申请号：US11721950
申请日：2005-12-14
申请人： Vincent Cros , Julie Grollier , Manuel Munoz Sanchez , Albert Fert , Frederic Nguyen Van Dau
发明人： Vincent Cros , Julie Grollier , Manuel Munoz Sanchez , Albert Fert , Frederic Nguyen Van Dau
IPC分类号： G11C19/00
CPC分类号： H01L27/222 , G11C11/161 , G11C11/1675 , G11C19/0808 , H01L43/08
摘要： The general field of the invention is that of spintronics, namely the field of electronics using the magnetic spin properties of electrons. The main fields of application are the very large-scale magnetic storage of information and the measurement of local magnetic fields. The object of the invention is to considerably reduce the energy needed to reverse the magnetic domains of the ferromagnetic elements of submicron dimensions using the mechanism of the domain wall displacements that is induced either by just a current of spin-polarized carriers or by the combination of a current of spin-polarized carriers and a magnetic field, at least one of these being variable. This domain wall displacement results in a change of magnetic polarization in a specified switching zone. Several devices according to the invention are described that possess from one switching zone up to a plurality of switching zones according to the invention.
摘要翻译：本发明的一般领域是自旋电子学领域，即使用电子的磁自旋特性的电子领域。主要应用领域是信息的非常大规模的磁存储和局部磁场的测量。本发明的目的是显着地减少用亚微米尺寸的铁磁元件的磁畴反转所需的能量，这是通过仅由自旋极化载流子的电流或由自旋极化载流子的电流引起的畴壁位移的机制自旋极化载流子的电流和磁场，其中至少一个是可变的。该畴壁位移导致在特定开关区域中的磁极化的变化。描述根据本发明的几个装置，其具有根据本发明的从一个切换区段到多个切换区域。

4. 发明申请

US20090273421A1 SPINTRONIC DEVICE WITH CONTROL BY DOMAIN WALL DISPLACEMENT INDUCED BY A CURRENT OF SPIN-POLARIZED CARRIERS 有权
标题翻译：由旋转极化载波电流引起的域壁偏移控制的旋转装置
公开(公告)号：US20090273421A1
公开(公告)日：2009-11-05
申请号：US11721950
申请日：2005-12-14
申请人： Vincent Cros , Julie Grollier , Manuel Munoz Sanchez , Albert Fert , Frederic Nguyen Van Dau
发明人： Vincent Cros , Julie Grollier , Manuel Munoz Sanchez , Albert Fert , Frederic Nguyen Van Dau
IPC分类号： H01F7/02
CPC分类号： H01L27/222 , G11C11/161 , G11C11/1675 , G11C19/0808 , H01L43/08
摘要： The general field of the invention is that of spintronics, namely the field of electronics using the magnetic spin properties of electrons. The main fields of application are the very large-scale magnetic storage of information and the measurement of local magnetic fields. The object of the invention is to considerably reduce the energy needed to reverse the magnetic domains of the ferromagnetic elements of submicron dimensions using the mechanism of the domain wall displacements that is induced either by just a current of spin-polarized carriers or by the combination of a current of spin-polarized carriers and a magnetic field, at least one of these being variable. This domain wall displacement results in a change of magnetic polarization in a specified switching zone. Several devices according to the invention are described that possess from one switching zone up to a plurality of switching zones according to the invention.
摘要翻译：本发明的一般领域是自旋电子学领域，即使用电子的磁自旋特性的电子领域。主要应用领域是信息的非常大规模的磁存储和局部磁场的测量。本发明的目的是显着地减少用亚微米尺寸的铁磁元件的磁畴反转所需的能量，这是通过仅由自旋极化载流子的电流或由自旋极化载流子的电流引起的畴壁位移的机制自旋极化载流子的电流和磁场，其中至少一个是可变的。该畴壁位移导致在特定开关区域中的磁极化的变化。描述根据本发明的几个装置，其具有根据本发明的从一个切换区段到多个切换区域。

5. 发明授权

US07094480B2 Magnetic field sensor using magnetoresistance and method for making same 有权
标题翻译：使用磁阻的磁场传感器及其制造方法
公开(公告)号：US07094480B2
公开(公告)日：2006-08-22
申请号：US10276693
申请日：2001-04-27
申请人： Frederic Nguyen Van Dau , Henri Jaffres , Daniel Lacour
发明人： Frederic Nguyen Van Dau , Henri Jaffres , Daniel Lacour
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/098 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143 , Y10T428/1157
摘要： The invention relates to magnetic field sensors in which magnetoresistance is used as the physical phenomenon for detecting and measuring the magnetic field. It consists in producing a stack comprising a first ferromagnetic layer (101), an insulating layer (103), a second ferromagnetic layer (102) and an antiferromagnetic layer (104). The two ferromagnetic layers exhibit crossed magnetic anisotropies and form with the insulating layer a tunnel junction. The anisotropy of the first layer is obtained from the shape energy of the substrate on which this first layer rests and which is slightly misoriented with respect thereto. The anisotropy of the second layer is obtained by the action of the antiferromagnetic layer.
摘要翻译：本发明涉及使用磁阻作为检测和测量磁场的物理现象的磁场传感器。它包括生产包括第一铁磁层（101），绝缘层（103），第二铁磁层（102）和反铁磁层（104）的堆叠。两个铁磁层表现出交叉的磁各向异性并与绝缘层形成隧道结。第一层的各向异性从第一层所在的基板的形状能量获得，并且相对于该第一层略微偏离。通过反铁磁层的作用获得第二层的各向异性。

6. 发明申请

US20060049474A1 High performance spin-valve transistor 有权
标题翻译：高性能自旋阀晶体管
公开(公告)号：US20060049474A1
公开(公告)日：2006-03-09
申请号：US10538923
申请日：2003-11-24
申请人： Frederic Nguyen Van Dau
发明人： Frederic Nguyen Van Dau
IPC分类号： H01L29/82
CPC分类号： H01L29/66984
摘要： The invention generally relates to the field of spintronics, a branch of electronics using the magnetic spin properties of electrons. More particularly, the invention relates to the field of spin-valve transistors which can be used in numerous fields of electronics. The invention aims to propose an original arrangement for producing high-level and high-contrast collector currents simultaneously. The inventive spintronics transistor comprises a semiconductor emitter, a base forming a spin valve and a metallic connector separated from the base by an insulating deposit. The emitter/base interface constitutes a Schottky barrier and the base/collector interface constitutes a tunnel-effect barrier.
摘要翻译：本发明一般涉及自旋电子学领域，即使用电子的磁自旋特性的电子分支。更具体地说，本发明涉及可用于许多电子领域的自旋阀晶体管领域。本发明旨在提出同时产生高电平和高对比度集电极电流的原始布置。本发明的自旋电子晶体管包括半导体发射器，形成自旋阀的基座和通过绝缘沉积物从基座分离的金属连接器。发射极/基极接口构成肖特基势垒，基极/集电极接口构成隧道效应势垒。

7. 发明授权

US5686879A Ammeter 失效
标题翻译：电表
公开(公告)号：US5686879A
公开(公告)日：1997-11-11
申请号：US641033
申请日：1996-04-30
申请人： Alain Schuhl , Frederic Nguyen Van Dau
发明人： Alain Schuhl , Frederic Nguyen Van Dau
IPC分类号： G01R15/20 , G01R33/09 , H01L43/00
CPC分类号： G01R15/205
摘要： This ammeter comprises an element made of magnetoresistive material in a thin layer located on a first face of a substrate; first connection means connected to the magnetoresistive element in two zones along a first direction (XX') and enabling the element to be supplied with current; second connection means connected to the magnetoresistive element in two zones located along a second direction (YY') perpendicular to the first direction (XX'). This ammeter enables the measurement of the value of the current flowing in a conductor preferably oriented in a direction (ZZ') parallel to the first direction (XX').
摘要翻译：该电流表包括位于基板的第一面上的薄层中的由磁阻材料构成的元件; 第一连接装置沿着第一方向（XX'）连接到两个区域中的磁阻元件，并且使元件能够被供应电流; 在垂直于第一方向（XX'）的第二方向（YY'）上的两个区域中连接到磁阻元件的第二连接装置。该电流表能够测量流过导体的电流的值，优选地取向于与第一方向（XX'）平行的方向（ZZ'）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式