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1. 发明授权

US07268200B2 Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices 有权
标题翻译：有机硅酸盐树脂作为微电子器件制造中有机聚合物电介质的硬掩模
公开(公告)号：US07268200B2
公开(公告)日：2007-09-11
申请号：US11262237
申请日：2005-10-28
申请人： Paul H. Townsend, III , Lynne K. Mills , Sheila Gombar-Fetner
发明人： Paul H. Townsend, III , Lynne K. Mills , Sheila Gombar-Fetner
IPC分类号： C08G77/08
CPC分类号： H01L21/02118 , H01L21/02126 , H01L21/02203 , H01L21/02282 , H01L21/0332 , H01L21/31144 , H01L21/3121 , H01L21/76801 , H01L21/7681 , H01L21/76811 , H01L21/76813 , H01L21/76829 , H01L21/76835 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： This invention is directed to a method of making a composition in which a silane having an unsaturated group and a silane having an aromatic group are hydrolyzed. In this method the more highly reactive silane is continuously added during the hydrolysis reaction of the less reactive silane. The composition can be used in the fabrication of microelectronic devices, particularly as hardmasks or etchstops.
摘要翻译：本发明涉及一种制备其中具有不饱和基团的硅烷和具有芳族基团的硅烷水解的组合物的方法。在该方法中，反应性较低的硅烷在水解反应过程中连续添加更高反应性的硅烷。该组合物可以用于制造微电子器件，特别是硬掩模或蚀刻棒。

2. 发明授权

US07115531B2 Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices 有权
公开(公告)号：US07115531B2
公开(公告)日：2006-10-03
申请号：US09933535
申请日：2001-08-20
申请人： Edward O. Shaffer, II , Kevin E. Howard , Joost J. M. Waeterloos , Jack E. Hetzner , Paul H. Townsend, III , Lynne K. Mills , Sheila Gombar-Fetner , Larry R. Wilson
发明人： Edward O. Shaffer, II , Kevin E. Howard , Joost J. M. Waeterloos , Jack E. Hetzner , Paul H. Townsend, III , Lynne K. Mills , Sheila Gombar-Fetner , Larry R. Wilson
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/02118 , H01L21/02126 , H01L21/02203 , H01L21/02282 , H01L21/0332 , H01L21/31144 , H01L21/3121 , H01L21/76801 , H01L21/7681 , H01L21/76811 , H01L21/76813 , H01L21/76829 , H01L21/76835 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： This invention is a method comprising providing a substrate, forming a first layer on the substrate, wherein the first layer has a dielectric constant of less than 3.0 and comprises an organic polymer, applying an organosilicate resin over the first layer, removing a portion of the organosilicate resin to expose a portion of the first layer, and removing the exposed portions of the first layer. The invention is also an integrated circuit article comprising an active substrate containing transistors and an electrical interconnect structure containing a pattern of metal lines separated, at least partially, by layers or regions of an organic polymeric material having a dielectric constant of less than 3.0 and further comprising a layer of an organosilicate resin above at least one layer of the organic polymer material.

3. 发明授权

US06815333B2 Tri-layer masking architecture for patterning dual damascene interconnects 有权
标题翻译：用于图案化双镶嵌互连的三层屏蔽架构
公开(公告)号：US06815333B2
公开(公告)日：2004-11-09
申请号：US10402073
申请日：2003-03-28
申请人： Paul H. Townsend, III , Lynne K. Mills , Joost J. M. Waeterloos , Richard J. Strittmatter
发明人： Paul H. Townsend, III , Lynne K. Mills , Joost J. M. Waeterloos , Richard J. Strittmatter
IPC分类号： H01L214763
CPC分类号： H01L21/02118 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/02282 , H01L21/02304 , H01L21/02307 , H01L21/0271 , H01L21/0274 , H01L21/0332 , H01L21/31144 , H01L21/312 , H01L21/3122 , H01L21/31695 , H01L21/76808 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L21/76835
摘要： This invention relates to a method of dual damascene integration for manufacture of integrating circuits using three top hard mask layers having alternating etch selectivity characteristics.
摘要翻译：本发明涉及一种双镶嵌一体化方法，用于使用具有交替蚀刻选择性特性的三个顶部硬掩模层来制造积分电路。

4. 发明授权

US06184284B2 Adhesion promoter and self-priming resin compositions and articles made therefrom 有权
标题翻译：粘合促进剂和自吸树脂组合物和由其制成的制品
公开(公告)号：US06184284B2
公开(公告)日：2001-02-06
申请号：US09138510
申请日：1998-08-24
申请人： Theodore M. Stokich, Jr. , Brian B. Martin , Paul H. Townsend, III
发明人： Theodore M. Stokich, Jr. , Brian B. Martin , Paul H. Townsend, III
IPC分类号： C08J501
CPC分类号： C09D165/02 , C08G2261/312 , C08L71/126 , C08L83/00
摘要： A composition is comprised of the following: a) a hydrolyzed or partially hydrolyzed alkoxysilane; b) a solvent consisting of an organic liquid or mixture of two or more organic liquids in which component (a) and component (c) are soluble and c) a cross linking prepolymer, oligomer, resin or mixtures thereof that forms a low dielectric constant crosslinked polymer. Preferred crosslinked polymers are of a arylcyclobutene or polyphenylene prepolymer, oligomer, resin or mixtures thereof. A coating may be made using the composition wherein the coating is comprised of a crosslinked polymer of a low dielectric crosslinking prepolymer, oligomer, resin or mixture thereof and a hydrolyzed or partially hydrolyzed alkoxysilane, said coating being adhered to a surface of a substrate wherein said surface is comprised of a first material that is a metal, ceramic or polymer and a second material that is (i) a metal, ceramic, or polymer and (ii) different than the first material.
摘要翻译：组合物由以下组成：a）水解或部分水解的烷氧基硅烷; b）由组分（a）和组分（c）可溶于其中的有机液体或两种或更多种有机液体的混合物组成的溶剂; c）形成低介电常数的交联预聚物，低聚物，树脂或其混合物交联聚合物。优选的交联聚合物是芳基环丁烯或聚亚苯基预聚物，低聚物，树脂或其混合物。可以使用组合物制备涂层，其中涂层由低介电交联预聚物，低聚物，树脂或其混合物的交联聚合物和水解或部分水解的烷氧基硅烷组成，所述涂层粘附到基材的表面，其中所述表面由金属，陶瓷或聚合物的第一材料和（i）金属，陶瓷或聚合物和（ii）不同于第一材料的第二材料构成。

5. 发明授权

US06630520B1 Composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom 有权
公开(公告)号：US06630520B1
公开(公告)日：2003-10-07
申请号：US09447011
申请日：1999-11-22
申请人： Kenneth J. Bruza , James P. Godschalx , Edward O. Shaffer, II , Dennis W. Smith, Jr. , Paul H. Townsend, III , Kevin J. Bouck , Qing Shan J. Niu
发明人： Kenneth J. Bruza , James P. Godschalx , Edward O. Shaffer, II , Dennis W. Smith, Jr. , Paul H. Townsend, III , Kevin J. Bouck , Qing Shan J. Niu
IPC分类号： C08J902
CPC分类号： H01L21/02126 , C08J9/26 , C08J2365/00 , C08L25/06 , C08L65/00 , H01L21/02118 , H01L21/02203 , H01L21/02282 , H01L21/312 , C08L2666/04 , C08L25/00 , C08L2666/06
摘要： A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.

6. 发明授权

US5994489A Adhesion promoter and self-priming arylcyclobutene resin compositions 失效
标题翻译：粘合促进剂和自吸式芳基环丁烯树脂组合物
公开(公告)号：US5994489A
公开(公告)日：1999-11-30
申请号：US327954
申请日：1994-10-24
申请人： Robert F. Harris , Paul H. Townsend, III
发明人： Robert F. Harris , Paul H. Townsend, III
IPC分类号： C09D183/04 , C09D183/06 , C09D183/08 , C08G77/06
CPC分类号： C09D183/04 , C09D183/06 , C09D183/08
摘要： A method of hydrolyzing an alkoxysilane which comprises adding sufficient water to hydrolyze at least one alkoxy group, optionally, in the presence of acidic or basic catalysts.
摘要翻译：水解烷氧基硅烷的方法，其包括加入足够的水以水解至少一个烷氧基，任选地，在酸性或碱性催化剂的存在下。

7. 发明授权

US07109249B2 Composition containing a cross-linkable matrix precursor and a poragen, and porous matrix prepared therefrom 有权
标题翻译：含有可交联基质前体和孔的组合物和由其制备的多孔基质
公开(公告)号：US07109249B2
公开(公告)日：2006-09-19
申请号：US10893640
申请日：2004-07-16
申请人： Kenneth J. Bruza , James P. Godschalx , Edward O. Shaffer, II , Dennis W. Smith, Jr. , Paul H. Townsend, III , Kevin J. Bouck , Qing Shan J. Niu
发明人： Kenneth J. Bruza , James P. Godschalx , Edward O. Shaffer, II , Dennis W. Smith, Jr. , Paul H. Townsend, III , Kevin J. Bouck , Qing Shan J. Niu
IPC分类号： C08J9/02
CPC分类号： H01L21/02126 , C08J9/26 , C08J2365/00 , C08L25/06 , C08L65/00 , H01L21/02118 , H01L21/02203 , H01L21/02282 , H01L21/312 , C08L2666/04 , C08L25/00 , C08L2666/06
摘要： A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.
摘要翻译：可以处理合适的可交联的基质前体和孔，以形成具有大于300℃的T N的多孔交联基质。多孔基质材料的介电常数比相应的无孔基体材料，使得多孔基质材料对于包括集成电路，多芯片模块和平板显示装置的各种电子应用特别有吸引力。

8. 发明授权

US06646081B2 Polyarylene compositions with enhanced modulus profiles 有权
公开(公告)号：US06646081B2
公开(公告)日：2003-11-11
申请号：US10044366
申请日：2002-01-11
申请人： James P. Godschalx , Qing Shan J. Niu , Kenneth J. Bruza , Clark H. Cummins , Paul H. Townsend, III
发明人： James P. Godschalx , Qing Shan J. Niu , Kenneth J. Bruza , Clark H. Cummins , Paul H. Townsend, III
IPC分类号： C08F2606
CPC分类号： H01L23/5329 , C08G61/00 , C08G61/10 , C08G2261/46 , C08G2261/80 , C08L65/00 , C08L65/02 , H01L2924/0002 , C08L2666/04 , H01L2924/00
摘要： This invention is a polyarylene composition in which resin does not undergo a significant drop in modulus at temperatures above 300° C. during cure. This feature enables one to form porous films by avoiding pore collapse and/or using a wider variety of poragen materials.

9. 发明授权

US06887910B2 Composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom 有权
标题翻译：含有可交联基质前体和孔的组合物和由其制备的多孔基质
公开(公告)号：US06887910B2
公开(公告)日：2005-05-03
申请号：US10283552
申请日：2002-10-29
申请人： Kenneth J. Bruza , James P. Godschalx , Edward O. Shaffer, II , Dennis W. Smith, Jr. , Paul H. Townsend, III , Kevin J. Bouck , Qing Shan J. Niu
发明人： Kenneth J. Bruza , James P. Godschalx , Edward O. Shaffer, II , Dennis W. Smith, Jr. , Paul H. Townsend, III , Kevin J. Bouck , Qing Shan J. Niu
IPC分类号： G02F1/1333 , C08F32/04 , C08F36/22 , C08F38/00 , C08J9/26 , C08L25/06 , C08L65/00 , H01L21/312 , C08J9/02
CPC分类号： H01L21/02126 , C08J9/26 , C08J2365/00 , C08L25/06 , C08L65/00 , H01L21/02118 , H01L21/02203 , H01L21/02282 , H01L21/312 , C08L2666/04 , C08L25/00 , C08L2666/06
摘要： A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.
摘要翻译：可以处理合适的可交联的基质前体和孔，以形成具有大于300℃的T N的多孔交联基质。多孔基质材料的介电常数比相应的无孔基体材料，使得多孔基质材料对于包括集成电路，多芯片模块和平板显示装置的各种电子应用特别有吸引力。

10. 发明授权

US06359091B1 Polyarylene compositions with enhanced modulus profiles 有权
标题翻译：具有增强的模量分布的聚亚芳基组合物
公开(公告)号：US06359091B1
公开(公告)日：2002-03-19
申请号：US09447012
申请日：1999-11-22
申请人： James P. Godschalx , Kenneth J. Bruza , Qing Shan J. Niu , Clark H. Cummins , Paul H. Townsend, III
发明人： James P. Godschalx , Kenneth J. Bruza , Qing Shan J. Niu , Clark H. Cummins , Paul H. Townsend, III
IPC分类号： C08F3800
CPC分类号： H01L23/5329 , C08G61/00 , C08G61/10 , C08G2261/46 , C08G2261/80 , C08L65/00 , C08L65/02 , H01L2924/0002 , C08L2666/04 , H01L2924/00
摘要： This invention is a polyarylene composition in which resin does not undergo a significant drop in modulus at temperatures above 300° C. during cure. This feature enables one to form porous films by avoiding pore collapse and/or using a wider variety of poragen materials.
摘要翻译：本发明是聚酰亚胺组合物，其中树脂在固化期间在高于300℃的温度下不会发生显着的模量降低。该特征使得能够通过避免孔塌陷和/或使用更多种类的成孔材料来形成多孔膜。

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