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1. 发明申请

US20110291108A1 SEMICONDUCTOR PHOTODETECTOR WITH TRANSPARENT INTERFACE CHARGE CONTROL LAYER AND METHOD THEREOF 有权
标题翻译：具有透明接口充电控制层的半导体光电二极管及其方法
公开(公告)号：US20110291108A1
公开(公告)日：2011-12-01
申请号：US13114254
申请日：2011-05-24
申请人： Paul H. Shen , Michael Wraback , Anand V. Sampath
发明人： Paul H. Shen , Michael Wraback , Anand V. Sampath
IPC分类号： H01L31/028 , H01L31/0352
CPC分类号： H01L31/03687 , H01L31/105 , H01L31/107 , H01L31/1812 , Y02E10/548
摘要： A detection device comprising a photodetector comprising a first semiconductor layer through which light first enters the photodetector; the first semiconductor layer to semiconductor material crystal lattice which terminates at an interface; the discontinuity of the semiconductor crystal lattice at the interface creating a first interface charge; the first semiconductor layer being an absorption layer in which photons in a predetermined wavelength range are absorbed and create photogenerated carriers; and a second polar semiconductor layer deposited on the crystal lattice of the first semiconductor layer, the second polar semiconductor being substantially transparent to light in the predetermined wavelength range, the second polar semiconductor layer having a total polarization different from the first semiconductor layer so that a second interface charge is induced at the interface between the first and second semiconductor layers; the induced second interface charge reduces or substantially cancels the first interface charge; whereby the reduction or substantial cancellation of the surface charge in the first semiconductor layer increases the collection of photogenerated carriers by the photodetector. A method of improving the quantum efficiency of a semiconductor photodetector comprising providing a semiconductor photodetector having a first layer which has a first interface through which light first enters the semiconductor photodetector; placing a layer of polar material transparent to the band of detection wavelengths that has a polarization substantially different than the polarization of the first layer such that the polarization charge induced at the interface between the layer of polar material and the first surface results in decreased interface recombination of photogenerated minority carriers and an increase in quantum efficiency of the photodetector.
摘要翻译：一种检测装置，包括光检测器，其包括第一半导体层，光首先通过该第一半导体层进入光电检测器在界面处终止的第一半导体层到半导体材料晶格; 在界面处的半导体晶格的不连续性产生第一界面电荷; 第一半导体层是其中吸收预定波长范围的光子并产生光生载流子的吸收层; 以及沉积在所述第一半导体层的晶格上的第二极性半导体层，所述第二极性半导体对于所述预定波长范围内的光基本上是透明的，所述第二极性半导体层具有与所述第一半导体层不同的总偏振，在第一和第二半导体层之间的界面处感应出第二界面电荷; 感应的第二接口电荷减少或基本上抵消第一接口电荷; 由此减少或基本消除第一半导体层中的表面电荷增加了光电检测器对光生载流子的收集。一种提高半导体光电检测器的量子效率的方法，包括提供具有第一层的半导体光电检测器，该第一层具有第一界面，光通过该第一界面首先进入半导体光电检测器; 将具有与第一层的极化基本不同的极化的检测波长带透明的极性材料层透明，使得在极性材料层和第一表面之间的界面处诱导的极化电荷导致界面复合减少的光产生的少数载流子和光电检测器的量子效率的提高。

2. 发明申请

US20110291109A1 POLARIZATION ENHANCED AVALANCHE PHOTODETECTOR AND METHOD THEREOF 有权
标题翻译：偏振增强型AVALANCHE光电转换器及其方法
公开(公告)号：US20110291109A1
公开(公告)日：2011-12-01
申请号：US13116667
申请日：2011-05-26
申请人： MICHAEL WRABACK , Paul H. Shen , Anand V. Sampath
发明人： MICHAEL WRABACK , Paul H. Shen , Anand V. Sampath
IPC分类号： H01L31/107 , H01L31/18 , H01L31/109
CPC分类号： H01L31/1075 , H01L31/03048 , H01L31/0312 , Y02E10/544
摘要： An avalanche photodetector comprising a multiplication layer formed of a first material having a first polarization; the multiplication layer having a first electric field upon application of a bias voltage; an absorption layer formed of a second material having a second polarization forming an interface with the multiplication layer; the absorption layer having a second electric field upon application of the bias voltage, the second electric field being less than the first electric field or substantially zero, carriers created by light absorbed in the absorption layer being multiplied in the multiplication layer due to the first electric field; the absorption layer having a second polarization which is greater or less than the first polarization to thereby create an interface charge; the interface charge being positive when the first material predominately multiplies holes, the interface charge being negative when the first material predominately multiplies electrons, the change in electric field at the interface occurring abruptly at the atomic level; the interface charge creating electric field discontinuity causing first electric field to attain the breakdown field in the multiplication region and the second electric field to be low or zero in the absorption layer to thereby eliminate the need for a doped charge layer and the associated thickness of the doped charge layer required to transition from the low field to the high field. Also claimed is a method of making.
摘要翻译：一种雪崩光电探测器，包括由具有第一极化的第一材料形成的倍增层; 所述乘法层在施加偏置电压时具有第一电场; 由具有与所述乘法层形成界面的第二极化的第二材料形成的吸收层; 所述吸收层在施加所述偏置电压时具有第二电场，所述第二电场小于所述第一电场或基本为零，由吸收层吸收的光产生的载流子由于所述第一电场而被乘以所述乘法层领域; 所述吸收层具有大于或小于所述第一极化的第二极化，从而产生界面电荷; 当第一材料主要乘以孔时，界面电荷为正，当第一材料主要乘以电子时，界面电荷为负，界面处的电场在原子级突然发生变化; 所述接口电荷产生电场不连续性使得第一电场在所述乘法区域中获得击穿场，并且所述第二电场在所述吸收层中为低或零，从而消除对掺杂电荷层的需要和相关联的厚度掺杂电荷层需要从低场转换到高场。还要求保护的是一种制造方法。

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