会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Amorphous silicon electrographic writing head assembly with protective
cover
    • 非晶硅电磁写字头组合带保护盖
    • US5337080A
    • 1994-08-09
    • US053644
    • 1993-04-27
    • Patrick A. O'ConnellRobert L. BatteyMaria S. DoniganSo V. TienJohn C. Knights
    • Patrick A. O'ConnellRobert L. BatteyMaria S. DoniganSo V. TienJohn C. Knights
    • B41J2/395G03G15/05G01D15/06
    • B41J2/395
    • An amorphous silicon electrographic writing head assembly which reduces the voltage drift in the high voltage driving transistor. The writing head including a substrate having a first surface and a second surface, the first surface having thin film elements fabricated thereon, the first surface having a first region, a second region, and a third region, the first region including an array of writing electrodes, the second region including an array of high voltage transistors, and the third region including interconnecting circuitry for connecting the thin film elements to a connector. The head also includes a first cover glass fixed to the first surface of the array covering the first region and a second cover glass fixed to the first surface of the array covering the third region. Also included are a first side glass fixed to the second surface of the array and a second side glass fixed to the first cover glass and the second cover glass whereby a channel is formed over the second region of the array where the high voltage driving transistor is located.
    • 一种降低高压驱动晶体管中的电压漂移的非晶硅电磁写头组件。 所述写字头包括具有第一表面和第二表面的基底,所述第一表面具有制造在其上的薄膜元件,所述第一表面具有第一区域,第二区域和第三区域,所述第一区域包括写入阵列 电极,第二区域包括高压晶体管阵列,第三区域包括用于将薄膜元件连接到连接器的互连电路。 头部还包括固定到覆盖第一区域的阵列的第一表面的第一盖玻璃和固定到覆盖第三区域的阵列的第一表面的第二盖玻璃。 还包括固定到阵列的第二表面的第一侧玻璃和固定到第一盖玻璃和第二盖玻璃的第二侧玻璃,由此在阵列的第二区域上形成通道,其中高压驱动晶体管是 位于。
    • 2. 发明授权
    • Image sensor with performance enhancing structures
    • 具有性能增强结构的图像传感器
    • US06710370B2
    • 2004-03-23
    • US10042090
    • 2002-01-07
    • Robert A. StreetJames B. BoyceJohn C. Knights
    • Robert A. StreetJames B. BoyceJohn C. Knights
    • H01L2904
    • H01L27/14632H01L27/1463H01L27/14643H01L27/14665
    • An image sensor is disclosed including passivation walls extending above the pixel contact pads into a photosensor layer (e.g., amorphous silicon) such that the pixel contact pads are isolated to reduce cross-talk. The passivation walls are formed from SiO2 or SiON to further reduce cross-talk. An embodiment includes metal structures provided under interface regions (e.g., under the passivation walls) separating adjacent pixels that are negatively biased to prevent cross-talk, and optionally extend under the contact pad to increase pixel capacitance. One embodiment omits p-type dopant from the lower amorphous silicon photodiode layer, and additional photodiode material layers are disclosed. Another disclosed sensor structure utilizes a textured surface to increase light absorption. A color filter structure for image sensors is also disclosed.
    • 公开了一种图像传感器,其包括在像素接触焊盘上方延伸到光电传感器层(例如,非晶硅)中的钝化壁,使得像素接触焊盘被隔离以减少串扰。 钝化壁由SiO 2或SiON形成,以进一步减少串扰。 一个实施例包括设置在界面区域(例如,钝化壁下方)的金属结构,所述界面区域分隔相邻像素,其被负偏压以防止串扰,并且可选地在接触焊盘下方延伸以增加像素电容。 一个实施例省略了来自下部非晶硅光电二极管层的p型掺杂剂,并且公开了另外的光电二极管材料层。 另一公开的传感器结构利用纹理表面来增加光吸收。 还公开了一种用于图像传感器的滤色器结构。
    • 5. 发明授权
    • Glow discharge apparatus with squirrel cage electrode
    • 发光放电装置,带鼠笼电极
    • US4418645A
    • 1983-12-06
    • US362343
    • 1982-03-26
    • John C. Knights
    • John C. Knights
    • C23C16/509H01J37/32H01L31/20C23C13/08
    • H01J37/32018C23C16/509H01L31/202Y02E10/50Y02P70/521
    • In an r.f. glow discharge system, a plurality of hollow electrodes are positioned circumferentially about a central point forming a circular array or squirrel cage. A workpiece is supported within the squirrel cage and relative rotational movement between the squirrel cage and the workpiece is provided. A plurality of apertures are provided along the surface of each electrode and aligned toward the surface of the workpiece. Alternatively, each electrode may further consist of a pair of inner and outer hollow tubes each with a plurality of apertures along its length with the apertures of the inner tube being adjacent to and spaced from the apertures of the outer tube but offset therefrom. The arrangement is best suited for a cylindrically shaped workpiece, e.g., a photoreceptor drum.
    • 在r.f. 辉光放电系统,多个中空电极围绕形成圆形阵列或鼠笼的中心点周向定位。 工具被支撑在鼠笼内,并且提供了鼠笼和工件之间的相对旋转运动。 沿着每个电极的表面设置多个孔,并朝向工件的表面排列。 或者,每个电极还可以包括一对内部和外部中空管,每个内部和外部中空管具有沿着其长度的多个孔,内管的孔与外管的孔相邻并与其隔开,但与其偏离。 该装置最适用于圆柱形工件,例如感光鼓。
    • 8. 发明授权
    • Electrophotographic devices containing compensated amorphous silicon
compositions
    • 含有补偿非晶硅组合物的电子照相装置
    • US4634647A
    • 1987-01-06
    • US695990
    • 1985-01-29
    • Frank JansenJoseph MortMichael A. MorganSteven J. GrammaticaJohn C. Knights
    • Frank JansenJoseph MortMichael A. MorganSteven J. GrammaticaJohn C. Knights
    • G03G5/082G03G5/085
    • G03G5/08221G03G5/08235G03G5/08285
    • An electrophotographic photoresponsive device for use in electrophotography comprised of a supporting substrate, and an amorphous silicon composition containing from about 25 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, nitrogen, or arsenic. Also disclosed is a photoresponsive electrophotographic device comprised of a supporting substrate, an uncompensated amorphous silicon layer and an amorphous silicon composition containing from about 100 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, wherein the compensation increases from zero percent compensation to one percent compensation, for a distance of from about 0.1 microns to about 5 microns, which distance extends from the uncompensated amorphous silicon layer to the compensated amorphous silicon layer or wherein the photoresponsive device is comprised of a supporting substrate, an uncompensated amorphous silicon composition, a compensated amorphous silicon composition, containing from about 100 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, wherein the compensation increases from zero percent compensation to one percent compensation, for a distance of from about 0.1 microns to about 5 microns, which distance extends from the uncompensated amorphous silicon layer to the compensated amorphous silicon layer and a top overcoating layer of silicon nitride, silicon carbide, or amorphous carbon.
    • 一种用于电子照相术的电子照相光响应装置,包括支撑衬底和非晶硅组合物,其含有约25重量%至约1重量%的硼,其以约25重量%至约1重量% 的磷,氮或砷。 还公开了一种光响应电子照相装置,其包括支撑衬底,未补偿的非晶硅层和非晶硅组合物,其含有约百万分之100重量百分比至约1重量百分比的硼,以约25重量ppm 约1重量%的磷,其中所述补偿从零补偿增加到百分之一补偿,距离为约0.1微米至约5微米,该距离从未补偿的非晶硅层延伸至补偿的非晶硅层,或其中 光响应装置由支撑衬底,未补偿的非晶硅组合物,补偿的非晶硅组合物组成,其含有约百万分之100重量百分比至约1重量百分比的硼,其以约25重量ppm至约 1重量%的磷, 将补偿从零补偿增加到1%的补偿,距离为约0.1微米至约5微米,该距离从未补偿的非晶硅层延伸到补偿的非晶硅层和氮化硅的顶部外涂层, 碳化硅或无定形碳。