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1. 发明授权

US07700996B2 Tunable antifuse elements 有权
标题翻译：可调谐反熔丝元件
公开(公告)号：US07700996B2
公开(公告)日：2010-04-20
申请号：US12361944
申请日：2009-01-29
申请人： Patrice M. Parris , Weize Chen , John M. McKenna , Jennifer H. Morrison , Moaniss Zitouni , Richard J. De Souza
发明人： Patrice M. Parris , Weize Chen , John M. McKenna , Jennifer H. Morrison , Moaniss Zitouni , Richard J. De Souza
IPC分类号： H01L29/94
CPC分类号： H01L27/112 , H01L23/5252 , H01L27/11206 , H01L2924/0002 , Y10S438/981 , H01L2924/00
摘要： A tunable antifuse element (102, 202, 204, 504, 952) includes a substrate material (101) having an active area (106) formed in a surface, a gate electrode (104) having at least a portion positioned above the active area (106), and a dielectric layer (110) disposed between the gate electrode (104) and the active area (106). The dielectric layer (110) includes a tunable stepped structure (127). During operation, a voltage applied between the gate electrode (104) and the active area (106) creates a current path through the dielectric layer (110) and a rupture of the dielectric layer (110) in a rupture region (130). The dielectric layer (110) is tunable by varying the stepped layer thicknesses and the geometry of the layer.
摘要翻译：可调谐反熔断元件（102,202,204,504,952）包括具有形成在表面中的有源区域（106）的基板材料（101），栅电极（104），其至少部分位于有源区域（106）和设置在栅电极（104）和有源区（106）之间的电介质层（110）。电介质层（110）包括可调阶梯结构（127）。在操作期间，施加在栅极电极（104）和有源区域（106）之间的电压产生穿过电介质层（110）的电流路径以及在破裂区域（130）中电介质层（110）的破裂。电介质层（110）可以通过改变阶梯层厚度和层的几何形状来调节。

2. 发明申请

US20090127587A1 TUNABLE ANTIFUSE ELEMENTS 有权
标题翻译：可避免的元素
公开(公告)号：US20090127587A1
公开(公告)日：2009-05-21
申请号：US12361944
申请日：2009-01-29
申请人： Patrice M. Parris , Weize Chen , John M. McKenna , Jennifer H. Morrison , Moaniss Zitouni , Richard J. De Souza
发明人： Patrice M. Parris , Weize Chen , John M. McKenna , Jennifer H. Morrison , Moaniss Zitouni , Richard J. De Souza
IPC分类号： H01L29/78 , H01L29/86 , H01L25/07
CPC分类号： H01L27/112 , H01L23/5252 , H01L27/11206 , H01L2924/0002 , Y10S438/981 , H01L2924/00
摘要： A tunable antifuse element (102, 202, 204, 504, 952) includes a substrate material (101) having an active area (106) formed in a surface, a gate electrode (104) having at least a portion positioned above the active area (106), and a dielectric layer (110) disposed between the gate electrode (104) and the active area (106). The dielectric layer (110) includes a tunable stepped structure (127). During operation, a voltage applied between the gate electrode (104) and the active area (106) creates a current path through the dielectric layer (110) and a rupture of the dielectric layer (110) in a rupture region (130). The dielectric layer (110) is tunable by varying the stepped layer thicknesses and the geometry of the layer.
摘要翻译：可调谐反熔断元件（102,202,204,504,952）包括具有形成在表面中的有源区域（106）的基板材料（101），栅电极（104），其至少部分位于有源区域（106）和设置在栅电极（104）和有源区（106）之间的电介质层（110）。电介质层（110）包括可调阶梯结构（127）。在操作期间，施加在栅极电极（104）和有源区域（106）之间的电压产生穿过电介质层（110）的电流路径以及在破裂区域（130）中电介质层（110）的破裂。电介质层（110）可以通过改变阶梯层厚度和层的几何形状来调节。

3. 发明授权

US07528015B2 Tunable antifuse element and method of manufacture 有权
标题翻译：可调谐反熔丝元件及其制造方法
公开(公告)号：US07528015B2
公开(公告)日：2009-05-05
申请号：US11169962
申请日：2005-06-28
申请人： Patrice M. Parris , Weize Chen , John M. McKenna , Jennifer H. Morrison , Moaniss Zitouni , Richard J. De Souza
发明人： Patrice M. Parris , Weize Chen , John M. McKenna , Jennifer H. Morrison , Moaniss Zitouni , Richard J. De Souza
IPC分类号： H01L21/82 , H01L21/44 , H01L21/31
CPC分类号： H01L27/112 , H01L23/5252 , H01L27/11206 , H01L2924/0002 , Y10S438/981 , H01L2924/00
摘要： A tunable antifuse element (102, 202, 204, 504, 952) and method of fabricating the tunable antifuse element, including a substrate material (101) having an active area (106) formed in a surface, a gate electrode (104) having at least a portion positioned above the active area (106), and a dielectric layer (110) disposed between the gate electrode (104) and the active area (106). The dielectric layer (110) including the fabrication of one of a tunable stepped structure (127). During operation, a voltage applied between the gate electrode (104) and the active area (106) creates a current path through the dielectric layer (110) and a rupture of the dielectric layer (110) in a plurality of rupture regions (130). The dielectric layer (110) is tunable by varying the stepped layer thicknesses and the geometry of the layer.
摘要翻译：一种可调谐反熔断元件（102,202,204,504,952）和制造可调谐反熔丝元件的方法，包括在表面上形成有源区（106）的基片材料（101），具有位于有源区域（106）上方的至少一部分，和设置在栅电极（104）和有源区域（106）之间的电介质层（110）。介电层（110）包括制造可调阶梯结构（127）之一。在操作期间，施加在栅极电极（104）和有源区域（106）之间的电压产生穿过介电层（110）的电流路径，并且多个断裂区域（130）中的电介质层（110）的破裂，。电介质层（110）可以通过改变阶梯层厚度和层的几何形状来调节。

4. 发明申请

US20110299337A1 METHODS AND APPARATUS FOR AN ISFET 有权
标题翻译：用于ISFET的方法和装置
公开(公告)号：US20110299337A1
公开(公告)日：2011-12-08
申请号：US12794591
申请日：2010-06-04
申请人： Patrice M. Parris , Weize Chen , Richard J. De Souza , Md M. Hoque , John M. McKenna
发明人： Patrice M. Parris , Weize Chen , Richard J. De Souza , Md M. Hoque , John M. McKenna
IPC分类号： G11C16/04 , H01L21/28 , H01L27/108
CPC分类号： G01N27/4148 , G05F1/575 , G11C16/0416 , H01L21/28035 , H01L23/5223 , H01L27/11526 , H01L27/11558 , H01L28/40 , H01L28/60 , H01L29/66825 , H01L29/788 , H01L29/94 , H01L2924/0002 , H01L2924/00
摘要： An ISFET includes a control gate coupled to a floating gate in a CMOS device. The control gate, for example, a poly-to-well capacitor, is configured to receive a bias voltage and effect movement of a trapped charge between the control gate and the floating gate. The threshold voltage of the ISFET can therefore by trimmed to a predetermined value, thereby storing the trim information (the amount of trapped charge in the floating gate) within the ISFET itself.
摘要翻译： ISFET包括耦合到CMOS器件中的浮动栅极的控制栅极。控制栅极，例如多孔阱电容器被配置为接收偏置电压并且在控制栅极和浮置栅极之间实现俘获电荷的移动。因此，ISFET的阈值电压可以被修整到预定值，从而将修剪信息（浮置栅极中的俘获电荷的量）存储在ISFET本身内。

5. 发明授权

US09599587B2 Methods and apparatus for an ISFET 有权
公开(公告)号：US09599587B2
公开(公告)日：2017-03-21
申请号：US14478149
申请日：2014-09-05
申请人： Patrice M. Parris , Weize Chen , Richard J. De Souza , Md M. Hoque , John M. McKenna
发明人： Patrice M. Parris , Weize Chen , Richard J. De Souza , Md M. Hoque , John M. McKenna
IPC分类号： G11C16/04 , G01N27/414 , H01L27/115 , H01L49/02 , H01L29/66 , H01L29/788 , H01L29/94 , G05F1/575 , H01L21/28 , H01L23/522
CPC分类号： G01N27/4148 , G05F1/575 , G11C16/0416 , H01L21/28035 , H01L23/5223 , H01L27/11526 , H01L27/11558 , H01L28/40 , H01L28/60 , H01L29/66825 , H01L29/788 , H01L29/94 , H01L2924/0002 , H01L2924/00
摘要： An ISFET includes a control gate coupled to a floating gate in a CMOS device. The control gate, for example, a poly-to-well capacitor, is configured to receive a bias voltage and effect movement of a trapped charge between the control gate and the floating gate. The threshold voltage of the ISFET can therefore by trimmed to a predetermined value, thereby storing the trim information (the amount of trapped charge in the floating gate) within the ISFET itself.

6. 发明授权

US08878257B2 Methods and apparatus for an ISFET 有权
标题翻译： ISFET的方法和装置
公开(公告)号：US08878257B2
公开(公告)日：2014-11-04
申请号：US12794591
申请日：2010-06-04
申请人： Patrice M. Parris , Weize Chen , Richard J. De Souza , Md M. Hoque , John M. McKenna
发明人： Patrice M. Parris , Weize Chen , Richard J. De Souza , Md M. Hoque , John M. McKenna
IPC分类号： G01N27/414 , H01L27/115 , H01L29/788 , H01L29/94 , H01L49/02 , G11C16/04 , H01L29/66 , H01L23/522
CPC分类号： G01N27/4148 , G05F1/575 , G11C16/0416 , H01L21/28035 , H01L23/5223 , H01L27/11526 , H01L27/11558 , H01L28/40 , H01L28/60 , H01L29/66825 , H01L29/788 , H01L29/94 , H01L2924/0002 , H01L2924/00
摘要： An ISFET includes a control gate coupled to a floating gate in a CMOS device. The control gate, for example, a poly-to-well capacitor, is configured to receive a bias voltage and effect movement of a trapped charge between the control gate and the floating gate. The threshold voltage of the ISFET can therefore by trimmed to a predetermined value, thereby storing the trim information (the amount of trapped charge in the floating gate) within the ISFET itself.
摘要翻译： ISFET包括耦合到CMOS器件中的浮动栅极的控制栅极。控制栅极，例如多孔阱电容器被配置为接收偏置电压并且在控制栅极和浮置栅极之间实现俘获电荷的移动。因此，ISFET的阈值电压可以被修整到预定值，从而将修剪信息（浮置栅极中的俘获电荷的量）存储在ISFET本身内。

7. 外观设计

USD357030S Bushing 失效
公开(公告)号：USD357030S
公开(公告)日：1995-04-04
申请号：US15940
申请日：1993-12-02
申请人： John M. McKenna
设计人： John M. McKenna

8. 发明授权

US5385445A Centrifugal pump 失效
标题翻译：离心泵
公开(公告)号：US5385445A
公开(公告)日：1995-01-31
申请号：US161965
申请日：1993-12-03
申请人： John M. McKenna
发明人： John M. McKenna
IPC分类号： F04D1/06 , F04D29/62 , F04D1/08 , F04D29/44
CPC分类号： F04D1/066 , F04D29/628
摘要： A multi-stage open impeller centrifugal pump, primarily used for charging service. The pump uses multivane, 27 vanes, impellers, mounted on a single shaft. Rotor parts are a loose fit to the pump shaft and channel rings are pulled together with bolts. Jackbolts are used to separate the channel rings. A channel ring bushing is provided with a loose fit. The channel ring bushing is axially and radially retained by the channel ring and diffusor.
摘要翻译：多级开式叶轮离心泵，主要用于充电服务。该泵使用多个叶片，27个叶片，叶轮，安装在单个轴上。转子部件与泵轴松动配合，通道环用螺栓拉在一起。吊钩用于分离通道环。通道环套管配有松动配合。通道环衬套由通道环和扩散器轴向和径向保持。

9. 发明授权

US5299813A Floating seal ring 失效
标题翻译：浮动密封圈
公开(公告)号：US5299813A
公开(公告)日：1994-04-05
申请号：US965557
申请日：1992-10-23
申请人： John M. McKenna
发明人： John M. McKenna
IPC分类号： F16J15/44 , F16J15/38
CPC分类号： F16J15/441
摘要： A floating seal ring is disposed within a retainer ring encircling a shaft which extends through the retainer ring. The seal ring is permitted to float radially with respect to the shaft but is retained axially with respect to the shaft. A pin protrudes from the seal ring into a bore in the retainer ring to preclude rotational movement of the seal ring relative to the shaft. The seal ring has an inner diameter which is greater at one end thereof than at the other end thereof so that fluid flow through an annular clearance between the seal ring and the shaft is accelerated. In one embodiment, the seal ring has an annular inner surface that is tapered. In another embodiment, the seal ring has an annular inner surface that is stepped.
摘要翻译：浮动密封环设置在围绕延伸穿过保持环的轴的保持环内。允许密封环相对于轴径向浮动，但是相对于轴轴向地保持。销从密封圈突出到保持环中的孔中，以防止密封环相对于轴的旋转运动。密封环的一端的内径大于其另一端的内径，使得流过密封环和轴之间的环形间隙的流体被加速。在一个实施例中，密封环具有锥形的环形内表面。在另一个实施例中，密封环具有阶梯状的环形内表面。

10. 发明授权

US4971459A Journal bearing with high stiffness 失效
标题翻译：轴承高刚度
公开(公告)号：US4971459A
公开(公告)日：1990-11-20
申请号：US497660
申请日：1990-03-23
申请人： John M. McKenna
发明人： John M. McKenna
IPC分类号： F16C17/02 , F16C33/10
CPC分类号： F16C33/1075 , F16C17/02
摘要： A bearing arrangement wherein a shaft of uniform diameter is supported in a journal bearing having multiple sections located axially along said shaft at different locations. Each journal bearing section includes a circular journal bore receiving the shaft with the axis of said journal bores being parallel and displaced relative to each other and to the axis of the enclosed shaft in a plane normal to the axis of the shaft.
摘要翻译：一种轴承装置，其中具有均匀直径的轴被支撑在轴颈轴承中，所述轴颈轴承具有沿着所述轴在不同位置轴向定位的多个部分。每个轴颈轴承部分包括接收轴的圆形轴颈孔，所述轴颈孔的轴线在垂直于轴的轴线的平面中相对于彼此并且相对于封闭轴的轴线平行和移位。

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