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1. 发明公开

US20230361761A1 FREQUENCY MULTIPLIER CIRCUIT 审中-公开
公开(公告)号：US20230361761A1
公开(公告)日：2023-11-09
申请号：US18143854
申请日：2023-05-05
申请人： Paragraf Limited
发明人： Ivor GUINEY , Thomas James BADCOCK , Robert WALLIS
IPC分类号： H03B19/14 , H03K5/00
CPC分类号： H03K5/00006 , H03B19/14
摘要： According to a first aspect of the disclosure, an integrated frequency multiplier circuit is provided. The circuit comprises a substrate, a strip of graphene, first and second electrode, a dielectric layer, a frequency input electrode, and a frequency output electrode. The strip of graphene has a uniform width provided on the substrate, the strip having a width x and a length y extending from a first end to a second end. The first and second electrodes are provided in electrical contact with the strip of graphene at the first and second ends of the strip of graphene respectively. The dielectric layer is provided on the strip of graphene, wherein the dielectric layer is provided across the width x of the strip of graphene. The frequency input electrode is formed on the dielectric layer, wherein the frequency input electrode is provided across the width x of the strip of graphene. The frequency input electrode is provided over the strip of graphene at a location closer to the first end of the strip of graphene than the second end. The frequency output electrode is provided in electrical contact with the strip of graphene at a location along the length of the strip of graphene between the second electrode and the frequency input electrode, spaced apart from the second electrode.

2. 发明公开

US20240047551A1 A GRAPHENE/GRAPHENE OXIDE DIODE AND A METHOD OF FORMING THE SAME 审中-公开
公开(公告)号：US20240047551A1
公开(公告)日：2024-02-08
申请号：US17773350
申请日：2020-11-02
申请人： PARAGRAF LIMITED
发明人： Robert WALLIS
IPC分类号： H01L29/66 , H01L29/16 , H01L29/88
CPC分类号： H01L29/6603 , H01L29/1606 , H01L29/88
摘要： The present invention provides method for forming a diode, the method comprises providing a first graphene layer structure on a first substrate; providing a second graphene layer structure on a second substrate; treating the first graphene layer structure with an oxidant to form a graphene oxide surface thereon; and aligning the second graphene layer structure against the graphene oxide surface of the first graphene layer structure.

3. 发明申请

US20220290296A1 METHOD FOR THE PRODUCTION OF A POLYMER COATED GRAPHENE LAYER STRUCTURE AND GRAPHENE LAYER STRUCTURE 有权
公开(公告)号：US20220290296A1
公开(公告)日：2022-09-15
申请号：US17625042
申请日：2020-07-07
申请人： PARAGRAF LIMITED
发明人： Hugh GLASS , Ivor GUINEY , Martin TYLER , Robert WALLIS , Simon THOMAS
IPC分类号： C23C16/26 , H01L33/56 , H01L31/18 , H01L43/14 , C23C16/56
摘要： The present invention provides a method for the production of a polymer-coated graphene layer structure, the method comprising: providing a substrate on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form a graphene layer structure on the substrate, wherein the inlets are cooled to less than 100° C. and the susceptor is heated to a temperature of at least 50° C. in excess of a decomposition temperature of the precursor, wherein the graphene layer structure has a first charge carrier density, spin-coating a composition having a second charge carrier density onto the graphene layer structure to form an air-impermeable coating, wherein the coated graphene layer structure has a third charge carrier density which is less than the first charge carrier density, wherein the composition comprises a polymer or polymer precursor.

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