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    • 8. 发明授权
    • Differential non-volatile memory device and bit reading method for the same
    • 差分非易失性存储器件和位读取方法相同
    • US06876566B2
    • 2005-04-05
    • US10792033
    • 2004-03-03
    • Fabio PasoliniMichele Tronconi
    • Fabio PasoliniMichele Tronconi
    • G11C7/06G11C17/16G11C17/18G11C7/00
    • G11C17/18G11C7/065G11C17/16
    • A differential non-volatile memory device is provided that includes setting means, at least first and second OTP memory cells that are each coupled between a supply voltage and a reference voltage, and a read circuit forming a first current path between the first memory cell and the reference voltage and a second current path between the second memory cell and the reference voltage for reading the bit and the complementary bit that are stored in the first and second memory cells. The first current path includes a first circuit point that is associated with a first output terminal, and the second current path includes a second circuit point that is associated with a second output terminal. The setting means can be activated to bring the first and second circuit points to a voltage value that is substantially equal to the reference voltage, and is able to set the value of the current flowing through each of the first and second current paths. Also provided is a method for reading such a differential non-volatile memory device.
    • 提供了一种差分非易失性存储器件,其包括设置装置,至少第一和第二OTP存储器单元,每个至少第一和第二OTP存储器单元耦合在电源电压和参考电压之间;以及读取电路,形成第一存储器单元和 参考电压和第二存储单元之间的第二电流路径以及用于读取存储在第一和第二存储器单元中的位和互补位的参考电压。 第一电流路径包括与第一输出端子相关联的第一电路点,并且第二电流路径包括与第二输出端子相关联的第二电路点。 可以激活设置装置以使第一和第二电路点达到基本上等于参考电压的电压值,并且能够设置流过第一和第二电流路径中的每一个的电流的值。 还提供了一种用于读取这种差分非易失性存储器件的方法。