专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06172908B2 Controlled hot-electron writing method for non-volatile memory cells 有权
标题翻译：用于非易失性存储单元的受控热电子写入方法
公开(公告)号：US06172908B2
公开(公告)日：2001-01-09
申请号：US09169239
申请日：1998-10-08
申请人： Paolo Cappelletti , Bruno Ricco , David Esseni
发明人： Paolo Cappelletti , Bruno Ricco , David Esseni
IPC分类号： G11C1300
CPC分类号： G11C16/10 , G11C11/5621 , G11C11/5628 , G11C16/12
摘要： In order to optimize writing of the cell, the latter is written in a condition of equilibrium between an injection current Ig and the displacement current CppVsl. In this way, during writing, the voltage of the floating gate region Vfl remains constant, as does the drain current and the rise in the threshold voltage. In particular, both for programming and for soft-writing after erasure, the substrate of the cell is biased at a negative voltage Vsb with respect to the source region, and the control gate region of the cell receives a ramp voltage Vcg with a selected predetermined inclination Vsl satisfying an equilibrium condition Vsl
摘要翻译：为了优化电池的写入，后者被写入注入电流Ig和位移电流CppVsl之间的平衡状态。以这种方式，在写入期间，浮栅区域Vfl的电压与漏极电流和阈值电压的上升一样保持恒定。特别地，对于擦除后的编程和软写入，单元的基板相对于源极区域被偏置为负电压Vsb，单元的控制栅极区域接收具有所选预定的斜坡电压Vcg 倾斜度Vs1满足平衡条件Vs1

2. 发明授权

US06734490B2 Nonvolatile memory cell with high programming efficiency 有权
标题翻译：具有高编程效率的非易失性存储单元
公开(公告)号：US06734490B2
公开(公告)日：2004-05-11
申请号：US09919341
申请日：2001-07-30
申请人： David Esseni , Luca Selmi , Roberto Bez , Alberto Modelli
发明人： David Esseni , Luca Selmi , Roberto Bez , Alberto Modelli
IPC分类号： H01L29788
CPC分类号： H01L29/66825 , G11C16/0416 , H01L27/11521 , H01L29/7885
摘要： The memory cell is formed in a body of a P-type semiconductor material forming a channel region and housing N-type drain and source regions at two opposite sides of the channel region. A floating gate region extends above the channel region. A P-type charge injection region extends in the body contiguously to the drain region, at least in part between the channel region and the drain region. An N-type base region extends between the drain region, the charge injection region, and the channel region. The charge injection region and the drain region are biased by special contact regions so as to forward bias the PN junction formed by the charge injection region and the base region. The holes thus generated in the charge injection region are directly injected through the base region into the body, where they generate, by impact, electrons that are injected towards the floating gate region.
摘要翻译：存储单元形成在形成沟道区域的P型半导体材料的主体中，并且在沟道区域的两个相对侧容纳N型漏极和源极区域。浮动栅极区域在沟道区域的上方延伸。 P型电荷注入区域至少部分地在沟道区域和漏极区域之间在体内连续地延伸到漏极区域。 N型基极区域在漏极区域，电荷注入区域和沟道区域之间延伸。电荷注入区域和漏极区域被特殊的接触区域偏置，以使由电荷注入区域和基极区域形成的PN结正向偏置。这样在电荷注入区域中产生的孔直接通过基底区域注入到体内，在那里它们通过冲击产生被注入到浮动栅极区域的电子。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式